Search Results - (Author, Cooperation:J. H. He)
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1Latest Papers from Table of Contents or Articles in PressM. Amani ; D. H. Lien ; D. Kiriya ; J. Xiao ; A. Azcatl ; J. Noh ; S. R. Madhvapathy ; R. Addou ; S. Kc ; M. Dubey ; K. Cho ; R. M. Wallace ; S. C. Lee ; J. H. He ; J. W. Ager, 3rd ; X. Zhang ; E. Yablonovitch ; A. Javey
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-11-28Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressM. Y. Li ; Y. Shi ; C. C. Cheng ; L. S. Lu ; Y. C. Lin ; H. L. Tang ; M. L. Tsai ; C. W. Chu ; K. H. Wei ; J. H. He ; W. H. Chang ; K. Suenaga ; L. J. Li
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-08-01Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Latest Papers from Table of Contents or Articles in PressGu, H., Dutreix, C., Rebello, S., Ouatas, T., Wang, L., Chun, D. Y., Einolf, H. J., He, H.
The American Society for Pharmacology and Experimental Therapeutics (ASPET)
Published 2018Staff ViewPublication Date: 2018-01-12Publisher: The American Society for Pharmacology and Experimental Therapeutics (ASPET)Print ISSN: 0090-9556Electronic ISSN: 1521-009XTopics: Chemistry and PharmacologyMedicinePublished by: -
4Articles: DFG German National LicensesSchilling, P. J. ; He, J.-H. ; Cheng, J. ; Ma, E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The extended x-ray absorption fine structure (EXAFS) technique has been employed to monitor the formation of thermodynamically unstable solid solutions induced by mechanical alloying in the positive heat of mixing Fe–Cu system. Local structural changes are clearly observed, with Cu taking on bcc coordination in the bcc (Fe80Cu20) solid solution, and Fe taking on fcc coordination in the fcc (Fe50Cu50) solid solution. Atomic level alloying is demonstrated through curve fitting to ab initio simulations. A difference is observed in the behavior of bcc and fcc ball milled samples, with a large reduction in first shell coordination number observed in bcc nanocrystalline structures (pure Fe and Fe80Cu20), but not in the fcc nanocrystalline structures (Fe50Cu50). This is believed to be due to the inability of the fcc structure to retain a high defect density. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We performed calorimetric measurements of the enthalpy of formation of amorphous alloys created using vapor quenching in a highly immiscible system, Ag–Ni. The low-enthalpy states observed, as compared with extrapolated liquids and crystalline solid solutions, are in agreement with the findings from molecular dynamics (MD) simulations. The MD results support the proposition that the enthalpy reduction is associated with the ultra-fine-scale phase separation in the liquid/amorphous state. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesCheng, S. L. ; Lin, H. H. ; He, J. H. ; Chiang, T. F. ; Yu, C. H. ; Chen, L. J.
[S.l.] : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: