Search Results - (Author, Cooperation:J. Fair)

2011-08-20

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

*Aneuploidy ; Antigens, Nuclear/*genetics/*physiology ; Cell Cycle ; Cell Line ; Cell Line, Tumor ; Chromatids/physiology ; *Chromosomal Instability ; Chromosomes, Human, X/genetics ; Female ; Gene Deletion ; Gene Expression Profiling ; Gene Expression Regulation, Neoplastic ; Gene Silencing ; Gene Targeting ; Glioblastoma/*genetics ; Humans ; Karyotyping ; Male ; Melanoma/genetics ; Mutation ; Neoplasms/*genetics ; Polymorphism, Single Nucleotide ; Sarcoma, Ewing/genetics

1089-7550

AIP Digital Archive

Physics

The electrical resistivity of reactively sputtered TiN films was measured as a function of film thickness. The effect of directionality of the sputtered atoms, substrate temperature, bias voltage, deposition rate, and film morphology on the electron conductivity in TiN films was studied. The combination of rapid deposition rate and high substrate temperature with bias-collimated sputtering results in TiN films with the lowest resistivity, 45 μΩ cm, the largest temperature coefficient of resistance, 1355 ppm, and the highest superconducting transition temperature, 5.04 K. These films are characterized by small grains with mixed 〈111(approximately-greater-than) and 〈200(approximately-greater-than) orientation and reduced electron scattering with an estimated electron mean-free path of 96 nm.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

X-ray photoemission spectra of reactively sputtered TiN1.0 films are recorded without interference from adsorbed contaminants or ion sputter cleaning damage. In this way, the transition from hcp TiN0.3 to fcc TiN1.0 is characterized by a discontinuity in film stoichiometry, Ti 2p splitting energy, and Ti 2p3/2 binding energy as a function of the Ar/N2 ratio during sputtering. The line shapes of the N 1s and 2s transitions experience only an asymmetric broadening on forming fcc TiN. The core-level N 1s transition of fcc TiN is modeled as two components peaks with binding energies at 396.8 and 396.0 eV. Similarly, the valence band N 2s transition has corresponding component peaks at 16.8 and 16.2 eV. These high and low binding energy pairs are interpreted as on-site Ns and interstitial site Ni populations of nitrogen in a fcc TiN lattice, respectively. The ratio of N/Ti is 1.0 and the Ns/Ni ratio is approximately 6. Both ratios are independent of the composition of the sputtering gas mixture and the substrate temperature once fcc TiN is formed. The core level Ti 2p transition in fcc TiN is characteristic of a single Ti3+ oxidation state with a line shape that is also insensitive to the gas composition and the substrate temperature during sputtering.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

X-ray diffraction was performed in situ during annealing of a Co/Ti/Si(001) multilayer, which produced an epitaxial CoSi2 layer. The results indicate that the Ti layer did not stay intact during the reaction, and thus could not act like a membrane, moderating Co/Si interdiffusion. Strongly textured phases (M) formed prior to CoSi2 nucleation, and was unobservable upon completion of the anneal. Nucleation and growth of CoSi2 on Si(001) took place in the presence of M, new Co-Ti-(O) phases that were located at the metal/Si interface, and thus M might play an important role in the perfection of the silicide. © 1995 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

An integrated cluster tool process is described whereby stoichiometric Si3N4 films with less than 0.01 at % oxygen, hydrogen, and carbon are grown on 〈111〉 Si. The ultrahigh film purity is verified in situ with x-ray photoelectron spectroscopy and static secondary ion-mass spectrometry depth profiles. The two-step process consists of cleaning the surface in an electron cyclotron resonance excited H2 plasma, and passing in vacuum to a second chamber where it is exposed to NH3 for 2 min at 1070 °C to promote nitridation. The films are approximately 5 nm thick with a refractive index of 2.01 at 633 nm. They are resistant to a dry O2 ambient for at least 6 h at 1050 °C. The average breakdown field of Al/Si3N4/Si capacitors is around 9 MV/cm.

Electronic Resource

1089-7690

AIP Digital Archive

Physics

Chemistry and Pharmacology

We describe a novel mechanism for efficient generation of open shell free-radical complexes via UV photolysis of the corresponding closed shell precursors. Ar–SH and Ar2–SH are detected following 248 nm excitation of Ar–H2S and Ar2–H2S. Of particular dynamical interest are the nonfragmentary channels in which no Ar atoms are ejected. © 1996 American Institute of Physics.

Electronic Resource

1365-2044

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Electronic Resource

1089-7690

AIP Digital Archive

Physics

Chemistry and Pharmacology

Detailed investigations are described for the generation of open-shell radical complexes formed by unimolecular photolysis of closed-shell van der Waals precursors. As a specific test case, ultraviolet photolysis of slit-jet cooled Arn–H2S (n≤2) complexes at both 248 and 193 nm are shown to yield Ar–SH and Ar2–SH radical cluster species with surprisingly high efficiencies. Analysis of the laser induced fluorescence (LIF) spectra indicates that the radical complexes are produced with extensive van der Waals stretch/bend and overall rotational excitation, which is consistent with a simple ballistic model of the dissociation dynamics. The LIF spectra obtained as a function of expansion distance downstream provide clear evidence for remarkably efficient cooling of the newly formed radical cluster species by low-energy collisions with jet-cooled inert gas atoms at (approximate)10 K. Spectrally resolved Ar–SH and Ar2–SH LIF signals have been investigated as a function of Ar composition, which yields information on relative branching ratios for fragmentary (e.g., Ar2–H2S→Ar–SH+H+Ar) and nonfragmentary (e.g., Ar2–H2S→Ar2–SH+H) photolysis events. © 1999 American Institute of Physics.

Electronic Resource

1750-3841

Blackwell Publishing Journal Backfiles 1879-2005

Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition

Process Engineering, Biotechnology, Nutrition Technology

Electronic Resource

1432-0630

PACS: 42.55.Lt; 42.62.Cf; 42.70.Qs

Springer Online Journal Archives 1860-2000

Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Physics

Abstract. The use of F2 excimer laser sources, emitting at 157 nm, constitutes a new promising tool for scientific, industrial and lithography applications. The 157-nm laser emission enables high-resolution processes and the high photon energy offers the unique possiblity of photoionizing molecules in a single step. Therefore a lower fragmentation or thermal loading takes place. The 157-nm radiation will enable fundamental research and development for deep UV (DUV) high-resolution optical microlithography in the manufacturing of integrated circuits. This is the next step from the technology of ArF lasers at 193 nm. Furthermore, benefits are expected for key technologies requiring high-resolution processing and the micromachining of tough materials like Teflon or fused silica for micro-optics fabrication. Such applications require F2 excimer laser sources with high performance, reliability and efficiency. The world of nanotechnology is just beginning to reveal its potential.

Electronic Resource

0037-6795

History

Slavonic Studies

History

0001-1541

Chemistry ; Chemical Engineering

Wiley InterScience Backfile Collection 1832-2000

Chemistry and Pharmacology

Process Engineering, Biotechnology, Nutrition Technology

5 Ill.

Electronic Resource

0001-1541

Chemistry ; Chemical Engineering

Wiley InterScience Backfile Collection 1832-2000

Chemistry and Pharmacology

Process Engineering, Biotechnology, Nutrition Technology

Graphical correlations of binary gas diffusion coefficients are developed based on the Hirschfelder-Bird-Spotz diffusion equation and the theorem of corresponding states. A critical diffusion coefficient is defined and is used in turn for a definition of a “reduced” coefficient. The reduced diffusion coefficient is correlated graphically in generalized form in terms of the reduced properties of the diffusing gas. Using air as a reference “barrier” gas, the authors compared critical diffusion coefficients for various gases diffusing through a single barrier gas with the critical coefficients for these gases through air. This ratio, termed the barrier gas ratio, was found to be independent of the properties of the diffusing gas. A graphical correlation of the barrier gas ratio enables rapid estimation of a binary diffusion coefficient with a minimum of information.

3 Ill.

Electronic Resource

0001-1541

Chemistry ; Chemical Engineering

Wiley InterScience Backfile Collection 1832-2000

Chemistry and Pharmacology

Process Engineering, Biotechnology, Nutrition Technology

Studies of the air oxidation of aquoeus sodium sulfite solutions were made in simple bubble contacting columns of 3-, 4-, and 6-in. diameter. Superficial gas rates up to 300 lb./hr.-sq.ft. were used. Contacting action is described in detail, and comparisons with air-water data show the marked influence of small, ionic bubbles. Mass transfer and dynamic gas holdup data are presented, and the former are compared with mass transfer data for bubble-cap trays.

11 Ill.

Electronic Resource