Search Results - (Author, Cooperation:J. C. Hu)
-
1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-01-03Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressD. J. Huey ; J. C. Hu ; K. A. Athanasiou
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-11-20Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Biomechanical Phenomena ; Bone Regeneration ; Bone and Bones/physiology ; Cartilage, Articular/*physiology ; Humans ; Mesenchymal Stromal Cells/physiology ; Osteoblasts/physiology ; Osteoclasts/physiology ; *Regeneration ; Tissue Engineering/*methods ; *Tissue ScaffoldsPublished by: -
3Latest Papers from Table of Contents or Articles in PressCader, F. Z., Schackmann, R. C. J., Hu, X., Wienand, K., Redd, R., Chapuy, B., Ouyang, J., Paul, N., Gjini, E., Lipschitz, M., Armand, P., Wu, D., Fromm, J. R., Neuberg, D., Liu, X. S., Rodig, S. J., Shipp, M. A.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-08-24Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Immunobiology and Immunotherapy, Lymphoid NeoplasiaPublished by: -
4Latest Papers from Table of Contents or Articles in PressWang, B.-J., Li, C.-J., Hu, J., Li, H.-J., Guo, C., Wang, Z.-H., Zhang, Q.-C., Mu, D.-L., Wang, D.-X.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-04-22Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, AnaesthesiaPublished by: -
5Latest Papers from Table of Contents or Articles in PressLi, M.-G., Liu, X.-Y., Liu, Z.-Q., Hong, J.-Y., Liu, J.-Q., Zhou, C.-J., Hu, T.-Y., Xiao, X.-J., Ran, P.-X., Zheng, P.-Y., Liu, Z.-G., Yang, P.-C.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-07-10Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
6Articles: DFG German National LicensesHu, J. C. ; Deal, M. D. ; Plummer, J. D.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The diffusion of implanted Be in liquid-encapsulated Czochralski GaAs samples is modeled using SUPREM-IV.GS, a simulator for GaAs and Si processing technology. The "plus one'' approach for defect generation after implantation, as well as an assumption of local Ga interstitial sinks, are used to successfully simulate the high Be diffusivity, the uphill diffusion and the time-dependent Be diffusivity. The fast diffusion of implanted Be can be simulated using the same intrinsic Be diffusivity as that used in the simulation of the slow diffusion of molecular beam epitaxy grown-in Be. The roles of extended defects and nonequilibrium Ga point defects in the implanted Be anomalous diffusion behavior are taken into account. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesHu, J. C. ; Deal, M. D. ; Plummer, J. D.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The diffusion of Be in GaAs is studied in samples which are molecular beam epitaxy GaAs with grown-in Be. The Be diffusion profiles of samples annealed under various conditions are obtained using secondary ion mass spectrometry. SUPREM-IV.GS, a simulator for GaAs and Si processing technology, is used to compare the experimental results with our models and to extract parameters. The Be diffusion profiles show a kink feature and a time-dependent Be diffusivity which are successfully simulated. The intrinsic Be diffusivity, the Ga interstitial diffusivity, and the equilibrium concentration of Ga interstitials, all as a function of temperature, are obtained from this study: D+1Be=0.17 exp(−3.39 eV/kBT) cm2 s−1, DI=6.4×10−5 exp(−1.28 eV/kBT) cm2 s−1, and CI*int=4.7×1028 exp(−3.25 eV/kBT) cm−3. The role of nonequilibrium Ga point defects in the anomalous Be diffusion behavior is addressed. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesStaff View
ISSN: 0040-6031Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesStaff View
ISSN: 0042-207XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsType of Medium: Electronic ResourceURL: