Search Results - (Author, Cooperation:J. C. Chang)
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1Latest Papers from Table of Contents or Articles in PressJ. C. Chang ; D. A. Lockner ; Z. Reches
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-10-09Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: *Acceleration ; *Earthquakes ; LaboratoriesPublished by: -
2Latest Papers from Table of Contents or Articles in PressX. Chen ; D. Iliopoulos ; Q. Zhang ; Q. Tang ; M. B. Greenblatt ; M. Hatziapostolou ; E. Lim ; W. L. Tam ; M. Ni ; Y. Chen ; J. Mai ; H. Shen ; D. Z. Hu ; S. Adoro ; B. Hu ; M. Song ; C. Tan ; M. D. Landis ; M. Ferrari ; S. J. Shin ; M. Brown ; J. C. Chang ; X. S. Liu ; L. H. Glimcher
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-03-29Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Antigens, CD24/metabolism ; Antigens, CD44/metabolism ; Cell Hypoxia/genetics ; Cell Line, Tumor ; Cell Proliferation ; DNA-Binding Proteins/deficiency/genetics/*metabolism ; Disease Progression ; Female ; Gene Expression Regulation, Neoplastic ; Gene Regulatory Networks ; Gene Silencing ; Humans ; Hypoxia-Inducible Factor 1, alpha Subunit/*metabolism ; Mice ; Neoplasm Invasiveness ; Neoplasm Recurrence, Local ; Prognosis ; RNA Polymerase II/metabolism ; Transcription Factors/deficiency/genetics/*metabolism ; Transcription, Genetic ; Triple Negative Breast Neoplasms/blood supply/genetics/*metabolism/*pathology ; Unfolded Protein ResponsePublished by: -
3Latest Papers from Table of Contents or Articles in PressH. I. Karunadasa ; E. Montalvo ; Y. Sun ; M. Majda ; J. R. Long ; C. J. Chang
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-02-11Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressS. Lin ; C. S. Diercks ; Y. B. Zhang ; N. Kornienko ; E. M. Nichols ; Y. Zhao ; A. R. Paris ; D. Kim ; P. Yang ; O. M. Yaghi ; C. J. Chang
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-08-22Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressDavila-Gonzalez, D., Choi, D. S., Rosato, R. R., Granados-Principal, S. M., Kuhn, J. G., Li, W.-F., Qian, W., Chen, W., Kozielski, A. J., Wong, H., Dave, B., Chang, J. C.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-03-06Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
6Latest Papers from Table of Contents or Articles in PressYang, H., Carney, P. J., Chang, J. C., Guo, Z., Stevens, J.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-08-01Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
7Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-11-22Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: statisticsPublished by: -
8Latest Papers from Table of Contents or Articles in PressGonzalez-Gonzalez, A., Munoz-Muela, E., Marchal, J. A., Cara, F. E., Molina, M. P., Cruz-Lozano, M., Jimenez, G., Verma, A., Ramirez, A., Qian, W., Chen, W., Kozielski, A. J., Elemento, O., Martin-Salvago, M. D., Luque, R. J., Rosa-Garrido, C., Landeira, D., Quintana-Romero, M., Rosato, R. R., Garcia, M. A., Ramirez-Tortosa, C. L., Kim, H., Rodriguez-Aguayo, C., Lopez-Berestein, G., Sood, A. K., Lorente, J. A., Sanchez-Rovira, P., Chang, J. C., Granados-Principal, S.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-11-16Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
9Articles: DFG German National LicensesAtique, N. ; Harmon, E. S ; Chang, J. C. P. ; Woodall, J. M. ; Melloch, M. R. ; Otsuka, N.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Excess As is incorporated in GaAs grown at low substrate temperatures by molecular beam epitaxy. Excess As is distributed in the epilayer as defects and the material exhibits considerable strain. When annealed to moderate temperatures, the strain is seen to disappear and the excess As is now in the form of semimetallic clusters. It has been proposed that these As clusters form buried Schottky barriers with the GaAs matrix and are surrounded by spherical depletion regions. In this article, we examine the effects of doping on the material properties and compare our results to the buried Schottky barrier mode. Si-doped GaAs epilayers grown at 250 °C, with doping densities between 5×1017 and 5×1018 cm−3, were annealed to temperatures between 700 and 1000 °C for 30 s. Be-doped GaAs epilayers grown at 250 °C, with doping densities between 5×1017 and 5×1019 cm−3, were annealed to temperatures between 700 and 900 °C for 30 s. Using extensive Hall measurements and transmission electron microscopy, we observe that the As precipitates deplete the surrounding GaAs matrix. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesHao, P. H. ; Wang, L. C. ; Chang, J. C. P. ; Kuo, H. C. ; Kuo, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Si/Pd-based contact schemes based on the solid-phase regrowth (SPR) process have been developed to form low-resistance ohmic contacts to n-Al0.5In0.5P (Eg=2.3 eV) with a minimum contact resistivity of about 6×10−6 Ω cm2. The SPR process responsible for the ohmic contact formation was verified using cross-sectional transmission electron microscopy. The contact resistivity of the Si/Pd-based contacts remained in the range of 2–3×10−5 Ω cm2 after aging at 400 °C for 25 h. Furthermore, a lateral modulation disordering phenomenon as a result of the SPR process in the regrown AlInP layer has been observed. These ohmic contacts may be useful in some novel Al0.5In0.5P-related device fabrication schemes. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesChang, J. C. P. ; Chin, T. P. ; Kavanagh, K. L. ; Tu, C. W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Structural properties of InAlAs/InP superlattices grown by gas source molecular beam epitaxy on (001)InP were investigated extensively with high-resolution x-ray diffraction. Very high quality material was obtained as indicated by narrow peak widths, numerous satellite peaks, and distinct Pendellosung fringes. Intermixing of group-V elements at each interface was quantified by dynamical simulations of (004), (002), and (115) reflections. The accuracy of the fits to both peak positions and peak intensities for all three reflections provides strong evidence for the proposed four-layer periodic structure.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesLahiri, I. ; Nolte, D. D. ; Chang, J. C. P. ; Woodall, J. M. ; Melloch, M. R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Undoped low-temperature-grown AlAs/GaAs superlattices experience pronounced interface intermixing with increasing anneal temperatures up to 900 °C. Quantum confinement shifts caused by intermixing of low-temperature-grown and standard-temperature-grown superlattices were studied using electromodulation spectroscopy. The effective activation energy for intermixing in the low-temperature-grown superlattices during 30 s isochronal postgrowth anneals was found to be (0.32±0.04) eV, anomalously smaller than for standard-temperature-grown superlattices. Roughening of the interfaces caused by arsenic precipitates accompanies the intermixing. Qualitative features of the intermixing have been confirmed using high resolution transmission electron microscopy and studies on x-ray rocking curves. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesKavanagh, K. L. ; Chang, J. C. P. ; Kirchner, P. D. ; Warren, A. C. ; Woodall, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Heavily Si-doped (5×1019 cm−3) low-temperature GaAs (LT-GaAs) sandwiched between undoped LT-GaAs layers has been grown by molecular beam epitaxy and annealed to 900 °C. Transmission electron microscopy showed that within the first few minutes of annealing an accumulation of As precipitates formed near each Si-doped/undoped LT-GaAs interface. With further annealing Si segregation to As precipitates was detected with secondary ion mass spectroscopy in the form of deltalike peaks at the As precipitate accumulations. The Si diffusion coefficient was initially concentration independent at a value of 2.5×10−13 cm2/s, comparable to diffusion under intrinsic conditions in As-rich GaAs grown at normal temperatures. After a 60 min anneal the Si concentration in the As precipitates reached 2.5×1020 cm−3.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesChang, J. C. P. ; Chen, Jianhui ; Fernandez, J. M. ; Wieder, H. H. ; Kavanagh, K. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures have been grown on GaAs substrates by molecular beam epitaxy using a compositionally step-graded InxGa1−xAs buffer layer. We found that the buffer layer produces essentially total relaxation with 〈2×106/cm2 dislocations present in the In0.3Ga0.7As layer. The structural perfection of this layer is reflected in the electrical and galvanomagnetic properties of its two-dimensional electron-gas channel which has a sheet-electron density of 1.2×1012/cm2, peak mobilities of 9 300 cm2/V s at room temperature and 31 000 cm2/V s at 77 K, and a mobility anisotropy of ∼4% along orthogonal 〈110〉 directions.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesChang, J. C. P. ; Otsuka, N. ; Harmon, E. S. ; Melloch, M. R. ; Woodall, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the formation of metal/semiconductor composites by ion implantation of Fe and Ni into GaAs and a subsequent anneal to nucleate clusters. Electron diffraction experiments and high resolution transmission electron microscopy images indicate that these precipitates are probably hexagonal and metallic Fe3GaAs or Ni3GaAs with orientation relationship to GaAs of (101¯0)pp(parallel)(422¯)m, (0002)pp(parallel)(111¯)m, and [12¯10]pp(parallel)[011]m. Correlation of the electrical and structural properties of the samples annealed at different temperatures shows that the buried Schottky-barrier model has general applicability. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesChin, T. P. ; Chang, J. C. P. ; Kavanagh, K. L. ; Tu, C. W. ; Kirchner, P. D. ; Woodall, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Highly lattice-mismatched InxGa1−xP (x≤0.38) layers were grown on GaP substrates by gas-source molecular beam epitaxy. A relatively thin, compositionally linear-graded buffer layer was used to reduce the number of threading dislocations. Studies by double-crystal x-ray diffraction and transmission electron microscopy show this buffer layer to be 97% strain-relaxed along both 〈110〉 directions with dislocations well confined within the graded buffer and the substrate. Threading dislocation densities in the top layers were less than 1×107 cm−2. Room-temperature photoluminescence, ranging from 560 to 600 nm, is achieved. Heterojunction p-i-n diodes emitting at 560 nm at 300 K exhibit good rectifying and reverse breakdown characteristics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesChin, T. P. ; Hou, H. Q. ; Tu, C. W. ; Chang, J. C. P. ; Otsuka, N.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A linearly graded InxGa1−xP (x=0.48–1) buffer layer is used for growing a high-quality InP layer on a GaAs substrate. We show that an InxGa1−xP buffer layer is superior to an InyGa1−yAs buffer layer because it is transparent to long wavelengths and allows a less stringent composition control. InGaAs/InP single quantum wells and InAsP/InP multiple quantum wells grown on the InP/InxGa1−xP/GaAs substrate show comparable quality to similar structures grown on InP (100) substrates. Photocurrent spectra for the latter exhibit quantum-confined Stark effect near 1.3 μm.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesChang, J. C. P. ; Chin, T. P. ; Tu, C. W. ; Kavanagh, K. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report transmission electron microscopy studies of dislocation structures in two lattice-mismatched III-V systems, InxGa1−xAs (0≤x≤0.53)/GaAs and InxGa1−xP (0≤x≤0.32)/GaP, grown by gas-source molecular beam epitaxy. Multiple dislocation-loops, extending from within a linearly graded buffer layer to deep inside the substrate, were observed in both systems. All dislocations in each set of loops consisted of 60° dislocations with the same Burgers vector on a similar {111} glide plane. The density in the graded buffer and the substrate was estimated to be 2×109/cm2, and their appearance was associated with low threading dislocation densities and good optical quality in material grown on top of the buffer layer, InP/In0.53Ga0.47As on GaAs or In0.32Ga0.68P on GaP.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesChang, J. C. P. ; Woodall, J. M. ; Melloch, M. R. ; Lahiri, I. ; Nolte, D. D. ; Li, N. Y. ; Tu, C. W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The effect of thermal annealing on the interface quality in undoped, AlAs/GaAs multiple quantum well (MQW) structures grown at a low substrate temperature (310 °C) by molecular beam epitaxy has been investigated using chemical lattice imaging and high resolution x-ray diffraction. The low-temperature-grown MQW is of high crystalline quality comparable to the standard-temperature-grown MQW. However, significant interface roughening and intermixing occurs at the quantum well heterointerface when the structures are annealed beyond 700 °C. The effective activation energy for interdiffusion is estimated as 0.24±0.07 eV. The structural properties observed here suggest that the excess arsenic associated with the low-temperature growth substantially enhances the diffusion of column III vacancies across an interface, which leads directly to intermixing of Al and Ga. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesChang, J. C. P. ; Kavanagh, K. L. ; Cardone, F. ; Sadana, D. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Rapid interdiffusion occurs at thin-film SiGe/GaAs interfaces when samples are annealed in oxygen containing ambients. Secondary ion mass spectroscopy and AlAs/GaAs superlattice disordering indicate that Ge and/or Si diffuse to depths of 200 nm after oxidation at 800 °C for 30 min. Negligible diffusion is detected for anneals in forming gas. Dissociation, out-diffusion, and oxidation of the GaAs substrate at the surface are associated with the phenomenon.Type of Medium: Electronic ResourceURL: