Search Results - (Author, Cooperation:J. Bai)
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1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-03-25Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressChen, Z., Zhu, S., Wang, L., Xie, D., Zhang, H., Li, X., Zheng, X., Du, Z., Li, J., Bai, L.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-04-24Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressM. Golalikhani; Q. Lei; R. U. Chandrasena; L. Kasaei; H. Park; J. Bai; P. Orgiani; J. Ciston; G. E. Sterbinsky; D. A. Arena; P. Shafer; E. Arenholz; B. A. Davidson; A. J. Millis; A. X. Gray; X. X. Xi
Nature Publishing Group (NPG)
Published 2018Staff ViewPublication Date: 2018-06-08Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2041-1723Topics: BiologyChemistry and PharmacologyNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-03-25Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressSrivastava, A. P., Luo, M., Zhou, W., Symersky, J., Bai, D., Chambers, M. G., Faraldo-Gomez, J. D., Liao, M., Mueller, D. M.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-05-11Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Biochemistry, Online OnlyPublished by: -
6Latest Papers from Table of Contents or Articles in PressZ. Liu ; D. Guan ; W. Wei ; S. J. Davis ; P. Ciais ; J. Bai ; S. Peng ; Q. Zhang ; K. Hubacek ; G. Marland ; R. J. Andres ; D. Crawford-Brown ; J. Lin ; H. Zhao ; C. Hong ; T. A. Boden ; K. Feng ; G. P. Peters ; F. Xi ; J. Liu ; Y. Li ; Y. Zhao ; N. Zeng ; K. He
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-08-21Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Carbon/*analysis ; Carbon Dioxide/analysis ; Carbon Sequestration ; China ; Climate Change ; Coal/utilization ; Construction Materials/*supply & distribution ; Fossil Fuels/*utilization ; Trees/metabolism ; UncertaintyPublished by: -
7Latest Papers from Table of Contents or Articles in PressChen, X., Bai, J., Liu, X., Song, Z., Zhang, Q., Wang, X., Jiang, P.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-07-18Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
8Latest Papers from Table of Contents or Articles in PressZhang, W., Yu, H.-C., Wu, L., Liu, H., Abdellahi, A., Qiu, B., Bai, J., Orvananos, B., Strobridge, F. C., Zhou, X., Liu, Z., Ceder, G., Zhu, Y., Thornton, K., Grey, C. P., Wang, F.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-01-13Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
9Latest Papers from Table of Contents or Articles in PressBai, J., Feng, G., Wang, S., Qi, T., Yang, J., Guo, J., Li, Z., Du, X., Wang, Z., Du, Y., Zhang, Y.
Royal Society
Published 2018Staff ViewPublication Date: 2018-08-09Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: energyPublished by: -
10Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
11Articles: DFG German National LicensesCai, Zhong-hou ; Huang, Kegang ; Montano, P. A. ; Russell, T. P. ; Bai, J. M. ; Zajac, G. W.
College Park, Md. : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: The surface structure of a model system was measured in real space by atomic force and optical microscopies, and compared with that obtained from measurements in reciprocal space by x-ray reflectivity and off-specular scattering at grazing incidence. Experiments were performed on films of symmetric diblock copolymers of polystyrene and polymethylmethacrylate, whose surfaces were covered by micrometer-size islands or holes (domains) of uniform height. The correlation functions extracted from the images of the film surfaces show weak peaks in the real-space domain distribution. The corresponding structures were also found in reciprocal space. The height of the domains obtained from the scattering measurements was found to be in excellent agreement with that obtained by atomic force microscopy. We developed a formalism using the kinematical approximation for the analysis of the x-ray-scattering measurements. We used a multilayer film model with roughness at each interface and relief domains at the surface. We extracted the domain–domain correlation functions for the x-ray-scattering analysis from the atomic force and optical microscopy images.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The relationship between strain relaxation and quantum well number in InGaN/GaN multiple quantum well (MQW) structures has been investigated by x-ray diffraction (XRD) and low-temperature photoluminescence (PL) measurements. At low temperature, the PL emission energy of a MQW monotonically decreases with increasing quantum well number, and the large pumping induced blueshift of the emission energy decreases rapidly with an increasing quantum well number. Based on an excitation power dependent PL measurement and a previous calculation that was made assuming a fully strained InGaN/GaN MQW, it is found that only a two-period MQW shows no strain relaxation. Furthermore, the residual strain in a MQW with different quantum well numbers is estimated, which is used for an x-ray diffraction kinetic simulation. The simulation agrees well with our measured XRD data, which in turn supports the conclusion based on the PL measurement. Our results indicate that the strain relaxation starts from a three-period InGaN/GaN MQW. Since the strain relaxation generally has a strong influence on the performance of the optical devices, the results presented should definitely be taken into account in designing InGaN/GaN MQW based optical devices. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Temperature-dependent photoluminescence (PL) measurements are performed on In0.23Ga0.77N/GaN single-quantum-well structures with different well thickness. Based on a band-tail model, the exciton localization effect is studied. The exciton localization effect is enhanced by increasing quantum-well thickness up to 2.5 nm. If the quantum-well thickness is further increased to above 2.5 nm, the exciton localization effect becomes weak. Finally, when the quantum-well thickness is increased to 5 nm, the exciton localization effect cannot be observed. In addition, the PL intensity decreases monotonically with increasing the quantum-well thickness. In connection with an excitation-power dependent PL measurement, the result of the quantum-well thickness dependent PL intensity can be attributed to quantum confined Stark effect, which becomes particularly strong in the wide quantum-well structure. Based on our optical investigation, the presented article indicates that the emission mechanism is dominated by the exciton localization effect in the thin quantum-well structures, while the quantum confined Stark effect dominates the radiative recombination in the wide quantum-well structures. Since understanding the emission mechanism is very important for further improving the performance of an InGaN/GaN-based optical device, the presented results in this article should be highly emphasized. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesLee, P. L. ; Beno, M. A. ; Jennings, G. ; Ramanathan, M. ; Knapp, G. S. ; Huang, K. ; Bai, J. ; Montano, P. A.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: An energy dispersive x-ray absorption spectroscopy instrument has been built at the X6A beam port of the x-ray ring at the National Synchrotron Light Source (NSLS). This instrument allows the collection of extended x-ray-absorption fine structure and/or x-ray absorption near-edge structure spectra for many elements on the millisecond time scale. The beamline employs a four-point crystal bender and a rectangular Si 220 crystal to access incident energies between 6.5 and 21 keV. Because the polychromator focuses the synchrotron beam to a narrow 100-μm line, this experimental apparatus is ideal for x-ray absorption spectroscopy experiments in special environments such as at high pressures, for in situ experiments, and/or for very small samples. In this manuscript we will describe the instrument design and present data with which to evaluate the instrument. This beamline is available through the NSLS user proposal system.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesYoo, S. S. ; Sivananthan, S. ; Faurie, J. P. ; Rodricks, B. ; Bai, J. ; Montano, P. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A CdTe photoconductor array x-ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half-maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 μm FWHM using a 50 μm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The exciton-localization effect and quantum-confine Stark effect (QCSE) on the performance of InGaN/GaN-based light-emitting diodes (LEDs) have been investigated with regard to indium mole fraction and well thickness by means of temperature-dependent and excitation-power-dependent photoluminescence measurements. The exciton-localization effect can be enhanced by increasing the indium mole fraction or increasing well thickness but up to 2.5 nm. The QCSE is monotonically enhanced with increasing indium concentration or well thickness. The output power of the LED can be increased by the enhanced exciton-localization effect; however, the QCSE has much stronger influence on the output power of LEDs than the exciton-localization effect, which should be taken into account for further improving the performance of InGaN/GaN-based LEDs. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Temperature-dependent magnetotransport measurements have been carried out on high-quality two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures with different Al content grown on sapphire substrates. The GaN electron effective mass and the quantum scattering time are determined by well-resolved Shunbikov–de Hass oscillations. The electron effective mass is determined to be 19m0. The ratio of the classic scattering time to the quantum scattering time increases with increasing 2DEG sheet carrier density, which agrees very well with the previous calculation based on an ideal 2DEG in conventional semiconductor systems. Our result indicates that a low density of deep centers results in the much higher mobility of our structure compared with other reports, which is of critical importance in fabricating a high-quality 2DEG structure in AlGaN/GaN systems. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesWang, T. ; Shirahama, T. ; Sun, H. B. ; Wang, H. X. ; Bai, J. ; Sakai, S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The influence of low-temperature buffer layer thickness on the electrical properties of GaN film is investigated, and the surface morphology is also examined by atomic force microscopy. A best surface morphology does not show best electrical properties, which could be attributed to the usual growth mechanism for GaN film on sapphire substrate. The influence of the growth temperature for the final GaN layer is also investigated. When the growth temperature increases to 1100 °C, the mobility is greatly enhanced to 600 cm2/V s with a background carrier density of 3.3×1016/cm3 at room temperature. The emission energy of the near band gap exciton at a low temperature shows a blueshift with increasing growth temperature due to an enhanced thermal stress. The calculation based on a thermal stress model agrees very well with the photoluminescence measurement. This result could partly explain the reason that the previously published values for the near band gap exciton emission energy are scattered. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesWang, T. ; Saeki, H. ; Bai, J. ; Shirahama, T. ; Lachab, M. ; Sakai, S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Temperature-dependent photoluminescence and transport measurements were performed on the In0.13Ga0.87N:Si/GaN:Si multiple-quantum-well (MQW) structures with different doping levels. By fitting the temperature-dependent emission energy of these samples using the band tail model, an obvious localization effect is observed in lightly doped MQW structures. Correspondingly, the electron mobilities in these structures are significantly higher than those of undoped and heavily doped MQW structures. Furthermore, when the localization effect is stronger, the mobility is higher. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesSUN, Y. ; LIU, D. L. ; YU, Z. Q. ; ZHANG, Q. ; BAI, J. ; SUN, D. Y.
Oxford, UK : Blackwell Science Ltd
Published 2003Staff ViewISSN: 1365-3040Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: BiologyNotes: The short-term effects of rare earth elements on pollen germination and tube growth were tested. Concentrations of 2.5∼20 µm lanthanum(La3+) or cerium (Ce3+)increased pollen germination and pollen tube growth, whereas concentrations higher than 40 µm La3+ and Ce3+ inhibited this process. The most effective concentration of La3+ needed for promotion shifted from 10 to 40 µm, depending on the Ca2+ concentration in the medium. Calmodulin (CaM) antagonist W7-agarose and anti-CaM antibody depressed La3+-promoted pollen germination and tube growth in a dose-dependent manner. La3+–CaM complexes (La3+–CaM) increased pollen germination and tube growth more than CaM or La3+ alone. Pertussis toxin (PTX) inhibited La3+-promoted pollen germination and tube growth. Cholera toxin (CTX) partially recovered the inhibition of the above La3+-promoted process by the anti-CaM antibody. Concentrations of 10−7∼10−9 m La3+–CaM increased GTPase activity inside plasma membrane vesicles of the pollen tube, but apo-CaM or La3+ alone had no positive effects. The results suggest that apoplastic CaM may be involved in the promotion effects of lower concentrations of La3+ on pollen germination and tube growth, and the heterotrimeric G-protein on the plasma membrane may transduce La3+-activated CaM signalling. The present studies provide an apoplastic mechanism for short-term effects of rare earth elements at lower concentrations in the pollen system.Type of Medium: Electronic ResourceURL: