Search Results - (Author, Cooperation:I. Matsuyama)
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1J. C. Andrews-Hanna ; S. W. Asmar ; J. W. Head, 3rd ; W. S. Kiefer ; A. S. Konopliv ; F. G. Lemoine ; I. Matsuyama ; E. Mazarico ; P. J. McGovern ; H. J. Melosh ; G. A. Neumann ; F. Nimmo ; R. J. Phillips ; D. E. Smith ; S. C. Solomon ; G. J. Taylor ; M. A. Wieczorek ; J. G. Williams ; M. T. Zuber
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-12-12Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2S. Bouley ; D. Baratoux ; I. Matsuyama ; F. Forget ; A. Sejourne ; M. Turbet ; F. Costard
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-03-05Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
3M. A. Siegler ; R. S. Miller ; J. T. Keane ; M. Laneuville ; D. A. Paige ; I. Matsuyama ; D. J. Lawrence ; A. Crotts ; M. J. Poston
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-03-25Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
4J. R. Creveling ; J. X. Mitrovica ; N. H. Chan ; K. Latychev ; I. Matsuyama
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-11-09Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
5López, M. ; Tanaka, N. ; Matsuyama, I. ; Ishikawa, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have developed a processing technique which is conducted entirely under an ultrahigh vacuum environment, called in situ electron-beam (EB) lithography, to pattern GaAs substrates on which AlGaAs/GaAs wire and box structures are subsequently regrown. In this technique a thin GaAs oxide layer is selectively formed by EB-stimulated oxidation under a controlled oxygen atmosphere, and is then used as a mask material to define mesa stripes and mesa squares by Cl2 gas etching. Subsequently, the initial mesa size is reduced by the regrowth of a GaAs layer. Finally, AlGaAs/GaAs wire and box structures are fabricated on the top of the mesas by the growth of a quantum well. These structures were characterized by cathodoluminescence measurements at 77 K. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
6Staff View
ISSN: 0038-1101Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsType of Medium: Electronic ResourceURL: -
7Staff View
ISSN: 0304-8853Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
8Staff View
ISSN: 0168-9002Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: