Search Results - (Author, Cooperation:H. Na)
-
1D. Ray ; H. Kazan ; K. B. Cook ; M. T. Weirauch ; H. S. Najafabadi ; X. Li ; S. Gueroussov ; M. Albu ; H. Zheng ; A. Yang ; H. Na ; M. Irimia ; L. H. Matzat ; R. K. Dale ; S. A. Smith ; C. A. Yarosh ; S. M. Kelly ; B. Nabet ; D. Mecenas ; W. Li ; R. S. Laishram ; M. Qiao ; H. D. Lipshitz ; F. Piano ; A. H. Corbett ; R. P. Carstens ; B. J. Frey ; R. A. Anderson ; K. W. Lynch ; L. O. Penalva ; E. P. Lei ; A. G. Fraser ; B. J. Blencowe ; Q. D. Morris ; T. R. Hughes
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-07-13Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Autistic Disorder/genetics ; Base Sequence ; Binding Sites/genetics ; Conserved Sequence/genetics ; Eukaryotic Cells/metabolism ; Gene Expression Regulation/*genetics ; Humans ; Molecular Sequence Data ; Nucleotide Motifs/*genetics ; Protein Structure, Tertiary/genetics ; RNA Stability/genetics ; RNA-Binding Proteins/chemistry/genetics/*metabolismPublished by: -
2Kim, B. C. ; Hong, J. ; Yang, J. G. ; Na, H. K. ; Hwang, S. M.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: A frequency modulated interferometer is developed, which uses a 94 GHz Gunn oscillator and a single sideband (SSB) upconverter as a frequency modulator. An SSB upconverter makes it possible to use a heterodyne phase measurement technique with one mm-wave source. In addition, the influence of frequency drift and phase noise of a mm-wave source on the phase measurement can be reduced. In this work, the performance of a SSB upconverter as a frequency modulator is examined. Also, overall performance of the mm-wave interferometer with a SSB upconverter and line density measurement results in a mirror device are described. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
3Staff View
ISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: The inversion problem of angle dependent chord integrals is theoretically studied and a rotating type optical probe is developed for its application. The proposed solution is computationally efficient and robust to measurement additive noise. The probe system constructed is tested in an inductively coupled plasma source by measuring a spectral line intensity of argon plasma. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Lee, H. G. ; Lee, S. G. ; Kim, B. C. ; Hong, J. ; Kim, W. C. ; Choh, K. K. ; Choi, J. H. ; Yang, J. G. ; Na, H. K. ; Doh, C. J. ; Hwang, S. M. ; Kwon, M.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: A Thomson scattering system on the Hanbit magnetic mirror device has been installed to measure the electron temperature and density of the plasma in the central cell. The configuration is based on a standard 90° scattering scheme. The optical system consists of a Q-switched Nd:YAG laser, input optics, collection optics, spectrograph optics, detectors, and a data acquisition system. Although the laser beam path is about 50 m long and the background emissions are not low, the electron temperature measurements have been made at a single point on a shot-by-shot basis, in which the stray light was considerably suppressed by using a beam dump, a viewing dump, and baffles. The measured electron temperature is about 50–70 eV in experiments for plasma production and heating by ICRF of 200-kW-rf power using a slot antenna. A description of the installed system and the experimental results are presented. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
5Lee, S. G. ; Hwang, S. M. ; Kim, B. C. ; Lee, H. G. ; Na, H. K. ; Yang, H. L. ; Yoo, S. J.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: The Korea Superconducting Tokamak Advanced Research (KSTAR) project is the Korean national fusion program for constructing a superconducting tokamak, that is capable of a steady-state operation. Currently, the KSTAR diagnostic group is concentrating on conceptual design activities to provide measurements of the plasma behavior that is necessary to satisfy the KSTAR missions. A diagnostic overview for the KSTAR device is presented. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
6Kim, T. W. ; Jung, M. ; Kim, H. J. ; Park, T. H. ; Yoon, Y. S. ; Kang, W. N. ; Yom, S. S. ; Na, H. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Metalorganic chemical vapor deposition of titanium dioxide (TiO2) on p-Si(100) using titanium isopropoxide and nitrous oxide via pyrolysis at relatively low (∼500 °C) temperature was performed to produce high quality TiO2/p-Si interfaces and to fabricate TiO2 insulator gates with a dielectric constant of high magnitude. Scanning electron microscopy shows that the surfaces of the TiO2 films have very smooth morphologies. From the x-ray diffraction analysis, the grown layer was found to be a polycrystalline film. Raman spectroscopy showed the optical phonon modes of a TiO2 thin film. The stoichiometry of the TiO2 film was investigated by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples of the Ag/TiO2/p-Si. The interface state density at the TiO2/p-Si interface was approximately high 1011 eV−1 cm−2 at the middle of the Si energy gap, and the dielectric constant determined from the capacitance-voltage measurements was as large as 73. These results indicate the TiO2 layers grown at relatively low temperature can be used for high density dynamic memory.Type of Medium: Electronic ResourceURL: -
7Yoon, Y. S. ; Kang, W. N. ; Yom, S. S. ; Kim, T. W. ; Jung, M. ; Kim, H. J. ; Park, T. H. ; Na, H. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis at relatively low temperature (∼500 °C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/p-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 films was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap.Type of Medium: Electronic ResourceURL: -
8Kim, T. W. ; Jung, M. ; Park, H. L. ; Na, H. K. ; Kim, J. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb (111) orientation substrates in the growth temperature range between 200 and 280 °C. Raman spectroscopy showed the optical phonon modes of the CdTe thin films and the formation of an indium telluride interfacial layer in the CdTe/InSb heterostructures. The stoichiometry of the CdTe/InSb heterostructures was observed by the Auger electron spectroscopy, and Auger depth profiles also demonstrated that the CdTe/InSb heterointerface was not abrupt. The results indicated that the films grown at about 265 °C posed a significant problem due to interdiffusion from the InSb substrates during the growth.Type of Medium: Electronic ResourceURL: -
9Staff View
ISSN: 0022-0248Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyGeosciencesPhysicsType of Medium: Electronic ResourceURL: -
10Staff View
ISSN: 0021-9673Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
11Staff View
ISSN: 0021-9673Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
12Staff View
ISSN: 0038-1098Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: