Search Results - (Author, Cooperation:H. M. Weng)

Showing 1 - 5 results of 5, query time: 0.12s Refine Results
  1. 1
    Staff View
    Publication Date:
    2018-07-19
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    0031-9007
    Electronic ISSN:
    1079-7114
    Topics:
    Physics
    Keywords:
    Condensed Matter: Structure, etc.
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2018-08-09
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    1098-0121
    Electronic ISSN:
    1095-3795
    Topics:
    Physics
    Keywords:
    Electronic structure and strongly correlated systems
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Z. K. Liu ; B. Zhou ; Y. Zhang ; Z. J. Wang ; H. M. Weng ; D. Prabhakaran ; S. K. Mo ; Z. X. Shen ; Z. Fang ; X. Dai ; Z. Hussain ; Y. L. Chen
    American Association for the Advancement of Science (AAAS)
    Published 2014
    Staff View
    Publication Date:
    2014-01-18
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Lo, Ikai ; Chang, Y. C. ; Weng, H. M. ; Chiang, J.-C.

    [S.l.] : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The two-dimensional electron gas in δ-doped double quantum wells has been studied by using the Shubnikov–de Haas measurement. It was discovered that the δ-doping layer at the central barrier is able to prevent the electron coupling in the two wells and that the persistent photoconductivity can be reduced due to the thinner barrier. A δ-doped multiple quantum well structure for photodetector application was also proposed. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.365372

    Articles: DFG German National Licenses
  5. 5
    Staff View
    ISSN:
    1432-0630
    Keywords:
    78.70.Bj ; 79.90 ; 72.20.Ht
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Physics
    Notes:
    Abstract Positron lifetime spectroscopy measurements have been carried out for semi-insulating GaAs with applied electric fields in the samples directed towards, and away from the positron injecting contact. The lifetime spectra have been decomposed into two components, the longer of which (≈400 ps) is characteristic of open volume defects at the metal-semiconductor interface through which positrons are injected. The interesting feature of these experiments is the large increase in the intensity of this interface component as the field is directed towards the contact. We show that this increase is caused by a significant fraction of implanted positrons drifting under the influence of a strong electric field produced by a layer of space-charge formed adjacent to the positron injecting contact. The general trend of the intensity variation is well explained by the proposed model. Experiments involving the application of an ac bias to the samples strengthen the suggestion that the space charge region is largely formed from ionized EL2 donors. The results of the present work indicate that semi-insulating GaAs possesses properties that make it a suitable material for the fabrication of a high efficiency (≈10%) room-temperature field-assisted positron moderator. The extraction of positrons from the GaAs substrate into the vacuum through a thin metalization is discussed based upon available positron affinities for the GaAs and various elemental metals. These data suggest that a few monolayers of a strongly electronegative metal such as Au or Pd may allow vacuum emission through quantum tunneling.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1007/BF00348229

    Articles: DFG German National Licenses