Search Results - (Author, Cooperation:H. K. Kim)
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1Shin, D. W., Cho, J., Yang, H. K., Kim, S. Y., Lee, S., Nam, E. J., Chung, J. S., Im, J.-S., Park, K., Park, J. H.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-05-16Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Oncology, Open access, Research methodsPublished by: -
2Cho, S.-Y., Sung, C. O., Chae, J., Lee, J., Na, D., Kang, W., Kang, J., Min, S., Lee, A., Kwak, E., Kim, J., Choi, B., Kim, H., Chuang, J. H., Pak, H.-K., Park, C.-S., Park, S., Ko, Y. H., Lee, D., Roh, J., Cho, M.-S., Park, S., Ju, Y. S., Suh, Y.-S., Kong, S.-H., Lee, H.-J., Keck, J., Banchereau, J., Liu, E. T., Kim, W.-H., Park, H., Yang, H.-K., Kim, J.-I., Lee, C.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-04-27Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Immunobiology and Immunotherapy, Lymphoid NeoplasiaPublished by: -
3H. K. Kim ; G. W. Hanson ; D. A. Geller
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-04-27Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Gold/*chemistry/*radiation effects ; *Heating ; Magnetite Nanoparticles/*chemistry ; *Radio WavesPublished by: -
4F. Trinter ; M. S. Schoffler ; H. K. Kim ; F. P. Sturm ; K. Cole ; N. Neumann ; A. Vredenborg ; J. Williams ; I. Bocharova ; R. Guillemin ; M. Simon ; A. Belkacem ; A. L. Landers ; T. Weber ; H. Schmidt-Bocking ; R. Dorner ; T. Jahnke
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-12-24Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Carbon Monoxide/chemistry ; DNA Damage/radiation effects ; *Electrons/therapeutic use ; Ions ; Kinetics ; Neoplasms/radiotherapy ; Nitrogen/chemistry ; Spectrum Analysis ; Time Factors ; X-RaysPublished by: -
5Han, K. Y., Kim, K.-T., Joung, J.-G., Son, D.-S., Kim, Y. J., Jo, A., Jeon, H.-J., Moon, H.-S., Yoo, C. E., Chung, W., Eum, H. H., Kim, S., Kim, H. K., Lee, J. E., Ahn, M.-J., Lee, H.-O., Park, D., Park, W.-Y.
Cold Spring Harbor Laboratory Press
Published 2018Staff ViewPublication Date: 2018-01-03Publisher: Cold Spring Harbor Laboratory PressElectronic ISSN: 1549-5469Topics: BiologyMedicinePublished by: -
6S. Smemo ; J. J. Tena ; K. H. Kim ; E. R. Gamazon ; N. J. Sakabe ; C. Gomez-Marin ; I. Aneas ; F. L. Credidio ; D. R. Sobreira ; N. F. Wasserman ; J. H. Lee ; V. Puviindran ; D. Tam ; M. Shen ; J. E. Son ; N. A. Vakili ; H. K. Sung ; S. Naranjo ; R. D. Acemel ; M. Manzanares ; A. Nagy ; N. J. Cox ; C. C. Hui ; J. L. Gomez-Skarmeta ; M. A. Nobrega
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-03-22Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Adipose Tissue/metabolism ; Animals ; Basal Metabolism/genetics ; Body Mass Index ; Body Weight/genetics ; Brain/metabolism ; Diabetes Mellitus, Type 2/genetics ; Diet ; Genes, Dominant/genetics ; Homeodomain Proteins/*genetics/metabolism ; Humans ; Hypothalamus/metabolism ; Introns/*genetics ; Male ; Mice ; Mixed Function Oxygenases/*genetics ; Obesity/*genetics ; Oxo-Acid-Lyases/*genetics ; Phenotype ; Polymorphism, Single Nucleotide/genetics ; Promoter Regions, Genetic/genetics ; Proteins/*genetics ; Thinness/genetics ; Transcription Factors/deficiency/*genetics/metabolism ; Zebrafish/embryology/geneticsPublished by: -
7K. H. Kim ; J. G. Kim ; S. Nozawa ; T. Sato ; K. Y. Oang ; T. W. Kim ; H. Ki ; J. Jo ; S. Park ; C. Song ; K. Ogawa ; T. Togashi ; K. Tono ; M. Yabashi ; T. Ishikawa ; J. Kim ; R. Ryoo ; H. Ihee ; S. Adachi
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-02-20Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
8A. Fathy, K.-H. Kim, J.-S. Park, H. Jin, C. Kletzing, J. R. Wygant, E. Ghamry
Wiley-Blackwell
Published 2018Staff ViewPublication Date: 2018-02-09Publisher: Wiley-BlackwellPrint ISSN: 0148-0227Topics: GeosciencesPhysicsPublished by: -
9Staff View
Publication Date: 2013-05-17Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: *Computer Simulation ; *Computers, Analog ; *Gene Regulatory Networks ; *Logic ; *Models, Biological ; Synthetic Biology/*methodsPublished by: -
10Park, H., Lee, K. H., Kim, Y. B., Ambade, S. B., Noh, S. H., Eom, W., Hwang, J. Y., Lee, W. J., Huang, J., Han, T. H.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-11-03Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
11J. M. Lee ; M. Wagner ; R. Xiao ; K. H. Kim ; D. Feng ; M. A. Lazar ; D. D. Moore
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-11-11Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Autophagy/genetics/*physiology ; Cell Line ; Cells, Cultured ; Fasting/physiology ; Gene Expression Regulation ; Hepatocytes/metabolism ; Liver/cytology/*metabolism/ultrastructure ; Male ; Mice ; Mice, Inbred C57BL ; Mice, Knockout ; Microtubule-Associated Proteins/genetics/metabolism ; PPAR alpha ; Receptors, Cytoplasmic and Nuclear/genetics/*metabolismPublished by: -
12Staff View
ISSN: 1573-4811Source: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsType of Medium: Electronic ResourceURL: -
13Hennessy, J. E., Latter, M. J., Fazelinejad, S., Philbrook, A., Bartkus, D. M., Kim, H.-K., Onagi, H., Oakeshott, J. G., Scott, C., Alissandratos, A., Easton, C. J.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-01-18Publisher: The American Society for Microbiology (ASM)Print ISSN: 0099-2240Electronic ISSN: 1098-5336Topics: BiologyPublished by: -
14Bui, A. D., Nguyen, T. M., Limouse, C., Kim, H. K., Szabo, G. G., Felong, S., Maroso, M., Soltesz, I.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-02-16Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: NeurosciencePublished by: -
15Kim, M. D. ; Kang, T. W. ; Kim, J. M. ; Kim, H. K. ; Jeoung, Y. T. ; Kim, T. W.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.Type of Medium: Electronic ResourceURL: -
16Park, J.-S. ; Kim, H.-K. ; Han, S.-K. ; Lee, J.-M. ; Namkoong, S.-E. ; Kim, S.-J.
Suite 500, 5th Floor, 238 Main Street, Cambridge, Massachussetts 02142, USA : Blackwell Science Inc.
Published 1995Staff ViewISSN: 1525-1438Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: Point mutations of c-K-ras in ovarian cancer were detected by replacement of GGT of codon 12 by GAT, AGT, TGT and GTT, polymerase chain reaction, agarose gel electrophoresis and Southern blot hybridization with a digoxigenin detection system. The incidence of four-typed point mutations of c-K-ras oncogene in 37 ovarian cancers was 35.1% (13/37) and the distributions were 32.4% (12/37), 2.7% (1/37), 0% and 0% of GGT to GAT, GGT to AGT, GGT to TGT, and GGT to GTT, respectively. The incidence of c-K-ras point mutations on codon 12 among 37 patients with ovarian cancer was 35.5% (8/22) in those with serous cystadenocarcinomas and 28.6% (2/7) in those with mucinous cystadenocarcinomas. c-K-ras point mutations on codon 12 were detected in 14.3% (1/7) of patients with stage I disease, 28.6% (2/7) with stage II disease, and in 43.5% (10/23) with stage III/IV disease, and there was a statistically significant increase in point mutations of c-K-ras oncogene with advancing clinical stage. The incidence of c-K-ras point mutations on codon 12 among 33 patients who had a pelvic lymph node dissection was 52.4% (11/21) in those with pelvic lymph node metastases and 16.7% (2/12) in those without pelvic lymph node metastases, a statistically significant difference. Furthermore, point mutation of c-K-ras gene was found most frequently in patients with advanced stage disease, and in those with pelvic lymph node metastases. Activation of c-K-ras oncogene seems to be a major factor in ovarian carcinogenesis and tumor progression.Type of Medium: Electronic ResourceURL: -
17Liu, Ann A. ; Kim, H. K. ; Tu, K. N. ; Totta, Paul A.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The growth and morphology of intermetallic compounds between the solder and substrate play an important role in the solderability and reliability of electronic solder joints. Solder on thin films, as in chip joint, acts as an electrical and mechanical/physical interconnection between the chip and the substrate. We have studied the interfacial reactions between eutectic SnPb (63Sn37Pb, wt%) and Cr/Cu/Au thin films. Our results found here have been compared to the solder reaction on bulk Cu. The eutectic solder has 7° of wetting angle on Cr/Cu/Au thin films rather than 11° on Cu substrate. Sideband around the solder cap was found in both the thin film case and the Cu case. Spalling of Cu6Sn5 compound grains occurred in the thin-film case when the Cu film was consumed but not in the case of bulk Cu. We observed a shape change from hemispherical "scallops'' to spheroids before spalling took place. The shape change is assisted by ripening a reaction among the scallops. We have calculated a critical size of the scallop, depending on the Cu film thickness, when the shape change or spalling starts. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxyLi, A. Z. ; Kim, H. K. ; Jeong, J. C. ; Wong, D. ; Schlesinger, T. E. ; Milnes, A. G.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500–600 °C for Si doping levels of 4–7×1016 cm−3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 1015 cm−3 down to 〈1012 cm−3) and two and a half orders of magnitude for M6 by introducing 0.2–1 at.% In or Sb and increasing growth temperatures from 500 to 550 °C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 °C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes where X is different for M3 and M6 and might be interstitial or impurity related.Type of Medium: Electronic ResourceURL: -
19Bai, G. R. ; Chang, H. L. M. ; Kim, H. K. ; Foster, C. M. ; Lam, D. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Ferroelectric PbTiO3 thin films have been prepared by a low-pressure MOCVD process. Epitaxial films with a crystal structure of a bulk equilibrium tetragonal phase were readily obtained within a range of growth conditions. However, by providing excess Pb in the growth process, we have observed an epitaxy-induced phase for near-stoichiometry PbTiO3 which possesses a perovskite-like, but possible, orthorhombic structure.Type of Medium: Electronic ResourceURL: -
20Miller, D. J. ; Chiarello, R. P. ; Kim, H. K. ; Roberts, T. ; You, H. ; Kampwirth, R. T. ; Gray, K. E. ; Zheng, J. Q. ; Williams, S. ; Chang, R. P. H. ; Ketterson, J. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The conditions for deposition of Cu and Cu-oxide thin films by reactive dc sputtering have been investigated by characterizing the crystal structure of growing films both during and immediately following deposition using an in situ x-ray diffraction technique. The relationship between sputtering conditions and the phases deposited was established for a variety of conditions. At each temperature studied, increasing the oxygen pressure in the system resulted in a systematic change in the phases deposited. Of significant importance was the identification of temperature-pressure regimes in which CuO was stable during deposition but reverted to Cu2O after the sputtering plasma was extinguished, suggesting a shift in the oxidizing potential in the plasma environment. These results also suggest that the in situ analysis technique may be ideally suited for the investigation of phase relationships and phase diagrams in other systems.Type of Medium: Electronic ResourceURL: