Search Results - (Author, Cooperation:H. Ishida)
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1U. Ohto ; T. Shibata ; H. Tanji ; H. Ishida ; E. Krayukhina ; S. Uchiyama ; K. Miyake ; T. Shimizu
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-02-18Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Base Sequence ; CpG Islands/*immunology ; Crystallography, X-Ray ; DNA/*chemistry/genetics/*immunology/metabolism ; Humans ; Ligands ; Models, Molecular ; Nucleic Acid Conformation ; Protein Structure, Tertiary ; Structure-Activity Relationship ; Toll-Like Receptor 9/agonists/antagonists & inhibitors/*chemistry/*immunologyPublished by: -
2T. Nakamura ; T. Noguchi ; M. Tanaka ; M. E. Zolensky ; M. Kimura ; A. Tsuchiyama ; A. Nakato ; T. Ogami ; H. Ishida ; M. Uesugi ; T. Yada ; K. Shirai ; A. Fujimura ; R. Okazaki ; S. A. Sandford ; Y. Ishibashi ; M. Abe ; T. Okada ; M. Ueno ; T. Mukai ; M. Yoshikawa ; J. Kawaguchi
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-08-27Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Staff View
Publication Date: 2018-11-20Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Surface physics, nanoscale physics, low-dimensional systemsPublished by: -
4Staff View
Publication Date: 2018-11-20Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Surface physics, nanoscale physics, low-dimensional systemsPublished by: -
5Staff View
ISSN: 0008-6215Keywords: Ganglioside GQ1b ; Glycoconjugate ; Glycosylation ; SialoglycoconjugatesSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
6Staff View
ISSN: 0008-6215Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
7Staff View
ISSN: 0008-6215Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
8Staff View
ISSN: 0957-4166Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
9Shunsaku Kitagawa, Genki Nakamine, Kenji Ishida, H. S. Jeevan, C. Geibel, and F. Steglich
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-10-13Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Condensed Matter: Electronic Properties, etc.Published by: -
10J. Klotz, K. Götze, E. L. Green, A. Demuer, H. Shishido, T. Ishida, H. Harima, J. Wosnitza, and I. Sheikin
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-04-14Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Electronic structure and strongly correlated systemsPublished by: -
11M. Meinero, F. Caglieris, G. Lamura, I. Pallecchi, A. Jost, U. Zeitler, S. Ishida, H. Eisaki, and M. Putti
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-10-09Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Electronic structure and strongly correlated systemsPublished by: -
12Staff View
Publication Date: 2018-07-06Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Anthropology, GeneticsPublished by: -
13Kaneko, T. ; Ishida, H. ; Hatakeyama, R. ; Sato, N.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: A Q machine with a rotating cathode structure and a limiter-type heat shield is described, which achieves an azimuthally symmetric and radially uniform profile of plasma density and potential. The point of emphasis is that a long time operation is realized by utilizing the latest technique of vacuum- and water-tight feedthroughs, yielding a plasma source for basic experiments with higher accuracy. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Ichimori, K. ; Ishida, H. ; Fukahori, M. ; Nakazawa, H. ; Murakami, E.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: An NO-selective electrode was developed as an easily applicable tool for a real-time nitric oxide (NO) measurement. The working electrode (0.2 mm diam) was made from Pt/Ir alloy coated with a three-layered membrane. The counterelectrode was made from a carbon fiber. When a stable NO donor, S-nitroso-N-acetyl-dl-penicillamine, was applied, the electrode current increased in a dose-dependent fashion. The current and calculated NO concentration showed a linear relationship in the range from 0.2 nM (S/N=1) to 1 μM of NO. The response of the electrode was 1.14±0.09 s. The effects of temperature, pH, and chemicals other than NO on the electrode current were also evaluated. Electrodes which were placed in the luminal side of rat aortic rings exhibited 30 pA of current due to NO generation induced by the addition of 10−6 M of acetylcholine. The current was eliminated in the presence of 50 μM NG-monomethyl-L-arginine, an inhibitor of NO synthase. Thus, this NO-selective electrode is applicable to real-time NO assay in biological systems.Type of Medium: Electronic ResourceURL: -
15Ishida, H. ; Ogasawara, Y. ; Ohsumi, K. ; Saito, A.
Oxford, UK : Blackwell Science Inc
Published 2003Staff ViewISSN: 1525-1314Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: GeosciencesNotes: The abundance and morphology of microdiamond in dolomite marble from Kumdy-kol in the Kokchetav Massif, are unusual; a previous study estimated the maximum content of diamonds in dolomite marble to be about 2700 carat ton−1. Microdiamond is included primarily in garnet, and occasionally in diopside and phlogopite pseudomorphs after garnet. They are classified into three types on the basis of their morphology: (1) S-type: star-shaped diamond consisting of translucent cores and transparent subhedral to euhedral very fine-grained outer parts; (2) R-type: translucent crystals with rugged surfaces; and (3) T-type: transparent, very fine-grained crystals. The S-type is the most abundant.Micro-Laue diffraction using a 1.6-µm X-ray beam-size demonstrated that the cores of the star-shaped microdiamond represent single crystals. In contrast, the most fine-grained outer parts usually have different orientations compared to the core. Laser–Raman studies indicate that the FWHM (Full Width at Half Maximum) of the Raman band of the core of the S-type diamond is slightly larger than that for the outer parts. Differences in morphology, crystal orientations, and in the FWHM of the Raman band between the core and the fine-grained outer-parts of S-type microdiamond suggest that the star-shaped microdiamond was formed discontinuously in two distinct stages.Type of Medium: Electronic ResourceURL: -
16Yoshikawa, M. ; Maegawa, M. ; Katagiri, G. ; Ishida, H.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Polarized Raman spectra around trenches formed on (100) silicon wafers have been measured and it has been found that the peak frequency shift varies with the polarization configuration, suggesting that anisotropic stresses occur around the trenches. The different stress components have been calculated by the use of the polarization Raman technique and it was found that the stress distribution of each component approximately agrees with that of each component simulated by a finite element method. Polarized Raman spectroscopy is a powerful technique for the estimation of an anisotropic stress of an electronic silicon device in situ. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Yoshikawa, M. ; Ishida, H. ; Ishitani, A. ; Murakami, T. ; Koizumi, S. ; Inuzuka, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have measured Raman spectra of a diamond film prepared on the (111) surface of cubic boron nitride(c-BN) by the dc plasma chemical vapor deposition method. The polarization property of the Raman line of diamond agrees well with that of LO phonon for the (111) surface of c-BN. The agreement between the polarization property of Raman lines of diamond and c-BN indicates a possibility of the heteroepitaxial growth of the diamond film on the (111) surface of c-BN. It is found that the diamond layers on c-BN are under tensile stress of 2.2×1011 dyn/cm2. The value of the corresponding tensile strain agrees well with the lattice mismatch calculated from the lattice constants of c-BN and diamond, supporting the possibility of the heteroepitaxial growth of the diamond film. Raman spectroscopy is a powerful technique not only to estimate the stress in the diamond film but also to determine the crystallographic orientation.Type of Medium: Electronic ResourceURL: -
18Yoshikawa, M. ; Ishida, H. ; Ishitani, A. ; Koizumi, S. ; Inuzuka, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have measured Raman spectra of a diamond film prepared on the (100) surface of cubic boron nitride(c-BN) by the dc plasma chemical vapor deposition method. It is found that the polarization property of the Raman line of diamond coincides well with that of the LO phonon for the (100) surface of c-BN. The coincidence between the polarization property of Raman lines of diamond and c-BN evidences heteroepitaxial growth of the diamond film on the (100) surface of c-BN.Type of Medium: Electronic ResourceURL: -
19Yoshikawa, M. ; Katagiri, G. ; Ishida, H. ; Ishitani, A. ; Akamatsu, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Raman spectra of diamondlike amorphous carbon (a-C) films prepared by the sputtering method have been measured as a function of the excitation wavelength. The Raman spectral profiles vary sensitively, reflecting the change of absorption spectra associated with π-π* electronic transitions with the hydrogen content of the films. From a comparison between Raman and electronic absorption spectra, it is confirmed that the Raman spectral variation with the excitation wavelength is due to the π-π* resonant Raman scattering from π-bonded (sp2) carbon clusters.Type of Medium: Electronic ResourceURL: -
20Yoshikawa, M. ; Katagiri, G. ; Ishida, H. ; Ishitani, A. ; Ono, M. ; Matsumura, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have measured Raman spectra of diamond films prepared by a hot-filament method and found that diamond layers on Si substrates are under compressive strain. The degree of the strain is found to increase with increasing nondiamond component in the diamond films. It is shown that Raman spectroscopy is a powerful method to estimate the crystalline quality, especially the strain in the diamond films.Type of Medium: Electronic ResourceURL: