Search Results - (Author, Cooperation:H. Hayashi)
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1Latest Papers from Table of Contents or Articles in PressGoto, T., Morita, S., Kitamura, T., Natsukawa, T., Sawano, H., Hayashi, Y., Kai, T.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-05-20Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Emergency medicine, ResuscitationPublished by: -
2Latest Papers from Table of Contents or Articles in PressH. Palike ; M. W. Lyle ; H. Nishi ; I. Raffi ; A. Ridgwell ; K. Gamage ; A. Klaus ; G. Acton ; L. Anderson ; J. Backman ; J. Baldauf ; C. Beltran ; S. M. Bohaty ; P. Bown ; W. Busch ; J. E. Channell ; C. O. Chun ; M. Delaney ; P. Dewangan ; T. Dunkley Jones ; K. M. Edgar ; H. Evans ; P. Fitch ; G. L. Foster ; N. Gussone ; H. Hasegawa ; E. C. Hathorne ; H. Hayashi ; J. O. Herrle ; A. Holbourn ; S. Hovan ; K. Hyeong ; K. Iijima ; T. Ito ; S. Kamikuri ; K. Kimoto ; J. Kuroda ; L. Leon-Rodriguez ; A. Malinverno ; T. C. Moore, Jr. ; B. H. Murphy ; D. P. Murphy ; H. Nakamura ; K. Ogane ; C. Ohneiser ; C. Richter ; R. Robinson ; E. J. Rohling ; O. Romero ; K. Sawada ; H. Scher ; L. Schneider ; A. Sluijs ; H. Takata ; J. Tian ; A. Tsujimoto ; B. S. Wade ; T. Westerhold ; R. Wilkens ; T. Williams ; P. A. Wilson ; Y. Yamamoto ; S. Yamamoto ; T. Yamazaki ; R. E. Zeebe
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-08-31Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: *Altitude ; Atmosphere/chemistry ; Calcium Carbonate/*analysis ; *Carbon Cycle ; Carbon Dioxide/analysis ; Diatoms/metabolism ; Foraminifera/metabolism ; Geologic Sediments/chemistry ; Global Warming/history/statistics & numerical data ; History, 21st Century ; History, Ancient ; Marine Biology ; Oxygen/metabolism ; Pacific Ocean ; Seawater/*chemistry ; TemperaturePublished by: -
3Latest Papers from Table of Contents or Articles in PressM. Uyanik ; H. Hayashi ; K. Ishihara
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-07-19Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Catalysis ; Catalytic Domain ; Chromans/*chemistry ; Cyclization ; Iodine Compounds/*chemistry ; Ketones/*chemistry ; Oxidation-Reduction ; Quaternary Ammonium Compounds/chemistry ; Tocopherols/*chemical synthesis/chemistry ; tert-Butylhydroperoxide/chemistryPublished by: -
4Latest Papers from Table of Contents or Articles in PressDelino, N. S., Aoki, M., Hayashi, H., Hattori, S.-i., Chang, S. B., Takamatsu, Y., Martyr, C. D., Das, D., Ghosh, A. K., Mitsuya, H.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-04-27Publisher: The American Society for Microbiology (ASM)Print ISSN: 0066-4804Electronic ISSN: 1098-6596Topics: BiologyMedicinePublished by: -
5Latest Papers from Table of Contents or Articles in PressHayashi, H., Kaneko, R., Demizu, S., Akasaka, D., Tayama, M., Harada, T., Irie, H., Ogino, Y., Fujino, N., Sasaki, E.
The American Society for Pharmacology and Experimental Therapeutics
Published 2018Staff ViewPublication Date: 2018-06-05Publisher: The American Society for Pharmacology and Experimental TherapeuticsPrint ISSN: 0022-3565Electronic ISSN: 1521-0103Topics: MedicinePublished by: -
6Latest Papers from Table of Contents or Articles in PressYonesaka, K., Haratani, K., Takamura, S., Sakai, H., Kato, R., Takegawa, N., Takahama, T., Tanaka, K., Hayashi, H., Takeda, M., Kato, S., Maenishi, O., Sakai, K., Chiba, Y., Okabe, T., Kudo, K., Hasegawa, Y., Kaneda, H., Yamato, M., Hirotani, K., Miyazawa, M., Nishio, K., Nakagawa, K.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-06-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
7Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The (NH4)2Sx surface treatment was applied to the AlGaAs/GaAs heterojunction bipolar transistor. The suppression of the emitter size effect on the current gain was observed for up to 4×4 μm2 emitter size devices, and 2.5 times high current gain was obtained with the improvement of the ideality factor. These results indicate that the surface recombination at emitter-base junction area are largely reduced by this treatment. The (NH4)2Sx treatment also proved to be applicable to the conventional device fabrication processes and highly reliable for the heat treatment.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesTaylor, W. J. ; Kuwata, N. ; Yoshida, I. ; Katsuyama, T. ; Hayashi, H.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We report results of an investigation of interdiffusion in GaAs/Ga0.82In0.18As strained single quantum wells. Wells of width 12–100 A(ring), grown by organometallic vapor phase epitaxy, were subjected to 10 s rapid thermal anneals of 830–950 °C, and shifts in the electron-to-heavy-hole transition energies were detected by 4 K photoluminescence. We employed a powerful computer model to relate postdiffusion well shape to changes in photoluminescence energies, enabling estimation of diffusivity. Interdiffusion rates of 1×10−16–2×10−14 cm2/s and activation energies of 3.1–3.8 eV were obtained.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Over-passivation films of silicon nitride (SiN) and silicon dioxide (SiO2) on (NH4)2Sx-treated GaAs deposited by various kinds of systems were studied with photoluminescence measurements. Among the various kinds of systems commonly used in semiconductor device fabrication processes, electron cyclotron resonance chemical vapor deposition (ECR-CVD) produces undamaged over-passivation films and it appears to be a promising system. The silicon nitride and silicon dioxide deposited at room temperature by ECR-CVD have the same PL intensity. For SiN, the effect of the treatment is enhanced by annealing while a gradual degradation with increasing temperature is observed for SiO2. By using ECR-CVD SiN for sulfur-treated GaAs passivation, the luminescences of free excitons and donor bound excitons are observed even for bulk-grown GaAs at 4.2 K, which indicates the reduction of the recombination centers at the surface.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesYamada, I. ; Narihara, K. ; Yamauchi, K. ; Hayashi, H.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: We have developed a YAG Thomson scattering (TS) system for the measurements of electron temperature and density profiles on the large helical device (LHD). The LHD-TS has four YAG lasers, and flexible operational modes are possible by using them. For example, (1) high-energy mode: The pulse energy can be increased up to four times by firing the four lasers simultaneously. In this mode, the data quality can be improved for low-density plasmas. (2) High repetition mode: When firing the lasers at intervals of 5 ms, the lasers work as a 200 Hz laser. The laser beams are guided to the LHD by seven steering mirrors. The first mirror is real-time feedback controlled for precise beam transport. The beam pointing stability is improved successfully from 200 μrad to below 4 μrad with the feedback-control system. We describe the details of the laser system for the LHD-TS. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesNarihara, K. ; Yamada, I. ; Hayashi, H. ; Yamauchi, K.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: This article describes the design and performance of a multi-point (200) high repetition rate (4×50 Hz) Thomson scattering diagnostic installed on the Large Helical Device. A unique feature of this system is its oblique back scattering configuration, which enables us to observe the entire plasma region along a major radius on the midplane under a severely restricted port constraint. High throughput collection optics using a mosaic mirror of 1.5 m×1.8 m area yield high quality data even with 0.5 J pulse energy delivered from 50 Hz repetition rate Nd: yttrium–aluminum–garnet lasers. High repetition and high spatial resolution (2–4 cm) of the system enable us to study island evolution in the plasma. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1365-2230Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 1365-2230Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesSato-Matsumura, K.C. ; Matsumura, T. ; Hayashi, H. ; Atsumi, T. ; Kobayashi, H.
Oxford, UK : Blackwell Science Ltd
Published 2000Staff ViewISSN: 1365-2133Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A new procedure for molecular-beam epitaxy growth is proposed in order to obtain a flat atomic layer without surface steps. The adsorption and desorption of Ga atoms on an InP substrate were studied by measuring the Auger electron peak intensities. It was found that the excess Ga atoms (surface steps) on the first monolayer of GaAs could be removed by annealing at an appropriate temperature. In addition, a new surface-cleaning procedure for an InP substrate is described.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: Photothermal deflection spectroscopy (PDS) at 77 K is described. The sample is immersed in liquid nitrogen with the liquid nitrogen acting as both the cooling and the deflecting medium. The experimentally obtained thermal diffusion length and relative change of refractive index of liquid nitrogen are compared with those of carbon tetrachloride. The construction of the liquid-nitrogen cryostat is the key factor in reducing the noise. A sensitivity of αd=10−4 is obtained for the present system. This technique enables the sensitive measurement of PDS at low temperatures.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesKatsuyama, T. ; Yoshida, I. ; Shinkai, J. ; Hashimoto, J. ; Hayashi, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High temperature and very low threshold current operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1−xP (x=0.43) strained multiple quantum well (SMQW) lasers has been achieved. Continuous wave (cw) operation was observed up to at least 150 °C with an output power of more than 7 mW, which is the highest cw operating temperature ever reported for devices operating in the visible wavelength region. The characteristic temperature between 20 and 80 °C was 130 K. The threshold current and threshold current density at 25 °C were 13.9 mA for a 5×160 μm device and 430 A/cm2 for a 80×770 μm device.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesWatanabe, N. ; Hayashi, H. ; Udagawa, Y. ; Takeshita, K. ; Kawata, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: B as well as N core excitation spectra of hexagonal boron nitride (h-BN) have been studied by means of x-ray Raman scattering (XRS) spectroscopy. Transitions from 1s core to σ* and π* states are completely distinguished by anisotropy measurements of XRS, thus making an unambiguous assignment to the symmetries of excited states and offering a sound basis to characterize h-BN with core absorption spectroscopy. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesWATANABE, Y. ; Langström, B. ; Watanabe, Y. ; Hamada, K. ; Gillberg, P-G. ; STÅLNACKE, C-G. ; HATANAKA, M. ; HAYASHI, H. ; HAYAISHI, O.
Oxford, UK : Blackwell Publishing Ltd
Published 1989Staff ViewISSN: 1749-6632Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Natural Sciences in GeneralType of Medium: Electronic ResourceURL: