Search Results - (Author, Cooperation:H. G. Jang)
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1R. Possemato ; K. M. Marks ; Y. D. Shaul ; M. E. Pacold ; D. Kim ; K. Birsoy ; S. Sethumadhavan ; H. K. Woo ; H. G. Jang ; A. K. Jha ; W. W. Chen ; F. G. Barrett ; N. Stransky ; Z. Y. Tsun ; G. S. Cowley ; J. Barretina ; N. Y. Kalaany ; P. P. Hsu ; K. Ottina ; A. M. Chan ; B. Yuan ; L. A. Garraway ; D. E. Root ; M. Mino-Kenudson ; E. F. Brachtel ; E. M. Driggers ; D. M. Sabatini
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-07-16Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Biomarkers, Tumor/metabolism ; Breast Neoplasms/enzymology/*genetics/*metabolism/pathology ; Cell Line, Tumor ; Cell Proliferation ; Citric Acid Cycle/physiology ; Gene Expression Regulation, Enzymologic ; Gene Expression Regulation, Neoplastic ; *Genomics ; Glutamic Acid/metabolism ; Humans ; Ketoglutaric Acids/metabolism ; Melanoma/enzymology/genetics ; Mice ; Neoplasm Transplantation ; Phosphoglycerate Dehydrogenase/genetics/metabolism ; RNA Interference ; Serine/*biosynthesisPublished by: -
2Chae, K. H. ; Song, J. H. ; Jung, S. M. ; Jang, H. G. ; Woo, J. J. ; Jeong, K. ; Whang, C. N. ; Oh, Y. J. ; Jung, H. J.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A simple relationship between the ratio of atomic transport induced by ion mixing and the activation energies for the impurity diffusion of constituents in a bilayer is presented to describe quantitatively the symmetric and asymmetric atomic transport in the thermal spike induced ion mixing. The model predicts fairly satisfactorily the trend of experimental observations in the bilayer systems which have near zero heats of mixing and relatively high spike activation energies. For instance, the Pd/Co bilayer system shows nearly symmetric atomic transport, since its constituents have similar activation energies for the impurity diffusion.Type of Medium: Electronic ResourceURL: -
3Koh, S. K. ; Jang, H. G. ; Choi, W. K. ; Jung, H.-J. ; Kondranine, S. G. ; Kralkina, E. A.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: We developed and evaluated a new partially ionized beam (PIB) source to deposit high quality Cu films. The novelty of the PIB source lies in the fact that the crucible and ionization parts are spaced in one cylindrical shell to make its structure compact and to get a uniform beam profile, but their electric circuits are not separated. In this article, we report the characteristics of the PIB source, such as voltage-ampere characteristics of the crucible and ionization parts, Cu+ ion beam uniformity with a change of the ionization currents, and deposition rate. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Kim, S. O. ; Song, J. H. ; Jang, H. G. ; Kim, S. S. ; Woo, J. J. ; Whang, C. N. ; Smith, R. J.
Springer
Published 1992Staff ViewISSN: 1573-4803Source: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsNotes: Abstract Ion-beam mixing in Al-Pd, Al-Cr, Pd-Cu, Ag-Cu and Ag-Fe bilayers has been studied using Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) over an ion dose range between 1 × 1015 and 1 × 1016 Ar+ cm−2 at room temperature. RBS and AES results show that the mixing efficiency of the light elements is higher than that of the heavy elements. The mixing efficiency of a heavy element is independent of the heat of mixing energy, while that of a light element has a close relation with the heat of mixing. The experimental results are discussed in terms of cascade mixing and thermal spike mixing.Type of Medium: Electronic ResourceURL: -
5Chae, K. H. ; Jang, H. G. ; Choi, I. S. ; Jung, S. M. ; Kim, K. S. ; Whang, C. N.
Springer
Published 1994Staff ViewISSN: 1573-4803Source: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsNotes: Abstract A thin copper layer (35 nm) deposited on SiO2 has been subjected to ion-beam mixing with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated using Rutherford backscattering spectroscopy, grazing-angle X-ray diffraction, X-ray photo-electron spectroscopy and scratch testing. The adhesion of the copper film was improved by a factor of three at a dose of 1.5 × 1016 Ar+ cm−2 by the ion-beam mixing at room temperature, while the high-temperature ion-beam mixing enhanced the adhesion by a factor of five. Ballistic mixing plays a role in the improvement of adhesion for the room-temperature ion mixing, and the creation of Cu2O phase induced by ion-beam mixing contributes to the enhancement of adhesion at high temperature.Type of Medium: Electronic ResourceURL: