Search Results - (Author, Cooperation:H. Evans)
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1Latest Papers from Table of Contents or Articles in PressSchneider, F. R. N., Sana, H., Evans, C. J., Bestenlehner, J. M., Castro, N., Fossati, L., Gräfener, G., Langer, N., Ramirez-Agudelo, O. H., Sabin-Sanjulian, C., Simon-Diaz, S., Tramper, F., Crowther, P. A., de Koter, A., de Mink, S. E., Dufton, P. L., Garcia, M., Gieles, M., Henault-Brunet, V., Herrero, A., Izzard, R. G., Kalari, V., Lennon, D. J., Maiz Apellaniz, J., Markova, N., Najarro, F., Podsiadlowski, P., Puls, J., Taylor, W. D., van Loon, J. T., Vink, J. S., Norman, C.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-01-05Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: AstronomyPublished by: -
2Latest Papers from Table of Contents or Articles in PressSchneider, F. R. N., Sana, H., Evans, C. J., Bestenlehner, J. M., Castro, N., Fossati, L., Gräfener, G., Langer, N., Ramirez-Agudelo, O. H., Sabin-Sanjulian, C., Simon-Diaz, S., Tramper, F., Crowther, P. A., de Koter, A., de Mink, S. E., Dufton, P. L., Garcia, M., Gieles, M., Henault-Brunet, V., Herrero, A., Izzard, R. G., Kalari, V., Lennon, D. J., Maiz Apellaniz, J., Markova, N., Najarro, F., Podsiadlowski, P., Puls, J., Taylor, W. D., van Loon, J. T., Vink, J. S., Norman, C.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-07-27Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: AstronomyPublished by: -
3Latest Papers from Table of Contents or Articles in PressH. Palike ; M. W. Lyle ; H. Nishi ; I. Raffi ; A. Ridgwell ; K. Gamage ; A. Klaus ; G. Acton ; L. Anderson ; J. Backman ; J. Baldauf ; C. Beltran ; S. M. Bohaty ; P. Bown ; W. Busch ; J. E. Channell ; C. O. Chun ; M. Delaney ; P. Dewangan ; T. Dunkley Jones ; K. M. Edgar ; H. Evans ; P. Fitch ; G. L. Foster ; N. Gussone ; H. Hasegawa ; E. C. Hathorne ; H. Hayashi ; J. O. Herrle ; A. Holbourn ; S. Hovan ; K. Hyeong ; K. Iijima ; T. Ito ; S. Kamikuri ; K. Kimoto ; J. Kuroda ; L. Leon-Rodriguez ; A. Malinverno ; T. C. Moore, Jr. ; B. H. Murphy ; D. P. Murphy ; H. Nakamura ; K. Ogane ; C. Ohneiser ; C. Richter ; R. Robinson ; E. J. Rohling ; O. Romero ; K. Sawada ; H. Scher ; L. Schneider ; A. Sluijs ; H. Takata ; J. Tian ; A. Tsujimoto ; B. S. Wade ; T. Westerhold ; R. Wilkens ; T. Williams ; P. A. Wilson ; Y. Yamamoto ; S. Yamamoto ; T. Yamazaki ; R. E. Zeebe
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-08-31Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: *Altitude ; Atmosphere/chemistry ; Calcium Carbonate/*analysis ; *Carbon Cycle ; Carbon Dioxide/analysis ; Diatoms/metabolism ; Foraminifera/metabolism ; Geologic Sediments/chemistry ; Global Warming/history/statistics & numerical data ; History, 21st Century ; History, Ancient ; Marine Biology ; Oxygen/metabolism ; Pacific Ocean ; Seawater/*chemistry ; TemperaturePublished by: -
4Latest Papers from Table of Contents or Articles in PressAzoulay, P., Graff-Zivin, J., Uzzi, B., Wang, D., Williams, H., Evans, J. A., Jin, G. Z., Lu, S. F., Jones, B. F., Börner, K., Lakhani, K. R., Boudreau, K. J., Guinan, E. C.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-09-21Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
5Articles: DFG German National LicensesStaff View
ISSN: 0022-0728Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
6Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-04-18Publisher: International Union of Crystallography (IUC)Electronic ISSN: 1600-5368Topics: Chemistry and PharmacologyGeosciencesKeywords: crystallographyweak interactionseditorialPublished by: -
7Latest Papers from Table of Contents or Articles in PressHussain, M.Ali, S.Karmazin Brelot, L.Stoeckli-Evans, H.
International Union of Crystallography (IUC)
Published 2018Staff ViewPublication Date: 2018-05-10Publisher: International Union of Crystallography (IUC)Electronic ISSN: 1600-5368Topics: Chemistry and PharmacologyGeosciencesPublished by: -
8Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The origin of the excess admittance at a forward-biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority-carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points out that the minority-carrier effect cannot account for the experimental observations.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley–Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesPoon, E. ; Hwang, W. ; Yang, E. S. ; Evans, H. L.
[S.l.] : American Institute of Physics (AIP)
Published 1985Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The photoconductance transient response in polycrystalline silicon has been studied theoretically and experimentally. Shockley–Read–Hall statistics are used to describe the emission and capture processes at the grain-boundary traps. Under appropriate conditions, the minority carrier capture and emission time constants of the grain-boundary trap can be directly obtained from the photoconductance transient response. The photoconductance method is therefore useful for studying grain-boundary deep level states. The special case when a focused laser spot is employed is also discussed. From the experimental data obtained from large-grain Wacker polycrystalline silicon, we have discovered a donor-like level at 0.48 eV below the conduction band with a concentration of 2×1010 cm−2. The electron (minority carrier) lifetime is found to be about 6×10−10–10−9 s.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesConley, John F. ; Lenahan, P. M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesConley, John F. ; Lenahan, P. M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Using electron-spin resonance (ESR), we demonstrate that several E' variant precursors exist in a variety of technologically significant thermally grown thin SiO2 films on Si. The E' variants include two varieties with the ubiquitous Eγ' line shape (zero-crossing g=2.0005, O3≡Si⋅) and a second very narrow line shape (zero-crossing g=2.0019, structure unknown). We tentatively label the g=2.0019 defect EP for provisional E' and distinguish the Eγ' variants Eγn' (neutral) and Eγp' (positive). We combine ESR, capacitance versus voltage electrical measurements, and charge injection sequences to compare the electronic properties of the defects. We find that paramagnetic EP defects are positively charged while paramagnetic Eγ' centers can be either positively charged or, under some circumstances, neutral. We find that EP precursors have a very large capture cross section for holes (σ=10−13 cm2) and that paramagnetic EP defects have an even larger capture cross section for electrons (σ=10−12 cm2). Both EP capture cross sections are an order of magnitude greater than those of the Eγp' defects. We find that EP centers are distributed much more broadly throughout the oxide than either the Eγp' or Eγn' defects. We also find a two order of magnitude variation in EP density dependent upon processing variations. In addition, EP centers, unlike the Eγ' variations, are not stable at room temperature. With their large capture cross section for holes and even larger capture cross section for electrons, EP defects may be relevant to device reliability and charge trapping under conditions of a low, relatively pure hole fluence such as in hot hole injection in short n-channel metal-oxide-semiconductor field-effect transistors.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesJalali, B. ; Evans, H. L. ; Yang, E. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We propose a new device, the carrier confinement photoconductive detector, in which an improvement in performance over a conventional photoconductor is achieved by confinement of photogenerated carriers in the active channel. The confinement can be realized by placing a layer of a wide band-gap semiconductor between the channel and ohmic contact. Analytical and numerical analyses show that gain-bandwidth improvement of 100% can be achieved by using the GaAl/AlGaAs system.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesMa, Q. Y. ; Schmidt, M. T. ; Wu, X. ; Evans, H. L. ; Yang, E. S.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesConley, John F. ; Lenahan, P. M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We demonstrate that at least two varieties of E' defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E'γp. We find that EP defect capture cross sections exceed the corresponding E'γp values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E'γp defects, and that the EP resonance, unlike the E'γp resonance is not stable at room temperature. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesStaff View
ISSN: 1747-6593Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Energy, Environment Protection, Nuclear Power EngineeringType of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesEVANS, H. L. ; LITTLE, A. R. ; GONG, Z. L. ; DUFFY, J. S. ; WIRGIN, I. ; EL-FAWAL, H. A. N.
Oxford, UK : Blackwell Publishing Ltd
Published 1993Staff ViewISSN: 1749-6632Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Natural Sciences in GeneralType of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: An off-axis device simulator is developed and used to model the distribution of electrons in a thin off-axis sample of p-type silicon. The results from the simulator are validated by matching with the results from an existing analytical model in the low field limit. At high fields, accumulation of electrons can be observed at both sample surfaces causing surface inversion layers there. The individual electron valley current densities are also calculated. It is found that at low values of applied field, the diffusion components govern the current density trends, whereas at high fields the drift components dominate. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 1365-3059Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, NutritionNotes: Questionnaires completed by 140 growers from 12 allotment sites around Leeds, West Yorkshire, listed a wide range of crop pests. Of the seven crops grown by over 50 per cent of the growers, brassicas, potatoes and carrots were damaged more frequently than expected from the average frequency for all 20 crops, peas and celery less often, and beans and onions at about the expected frequency. The main pests reported for brassicas and potatoes were slugs, and the most common pest of carrots was carrot fly. Further examination of 92 plots revealed a large number of pests; slugs, carrot fly (Psila rosae (F.)), aphids and cabbage root fly (Delia brassicae (Wiedemann)) were the most common. Results for soil samples showed pale potato cyst nematode (Globodera pallida (Stone) Behrens) to be at potentially damaging population levels in 21 out of 33 plots sampled at 10 allotment sites established for more than five years and in one of six plots sampled at two newly formed allotment sites. Soil sampling for carrot fly at eight allotment sites revealed widespread overwintering populations of about 1·5 larvae and pupae/100 ml of soil. Baiting for slugs on one plot indicated that a large population of these animals was present.Pesticides were not used by 22 of the 140 growers in the survey. The most widely favoured chemicals with at least 20 users each were a disinfectant, slug pellets, organophosphates and calomel.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 1365-3059Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, NutritionType of Medium: Electronic ResourceURL: