Search Results - (Author, Cooperation:H. C. Lu)

2013-10-25

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

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Actin-Related Protein 2-3 Complex/metabolism ; Actins/metabolism ; Adult ; Animals ; Behavior, Animal ; Bipolar Disorder/*drug therapy/genetics/*physiopathology ; Chromosomes, Human, Pair 22/genetics ; Disease Models, Animal ; Excitatory Postsynaptic Potentials ; Female ; Gene Dosage/genetics ; Gene Expression/genetics ; Genes, Duplicate/genetics ; Humans ; Hyperkinesis/genetics/physiopathology ; Inhibitory Postsynaptic Potentials ; Lithium/pharmacology ; Male ; Mice ; Mice, Transgenic ; Nerve Tissue Proteins/*genetics/*metabolism ; Seizures/genetics ; Valproic Acid/pharmacology/therapeutic use

2013-05-31

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

Amino Acid Sequence ; Animals ; Animals, Genetically Modified ; Ataxin-1 ; Ataxins ; Cell Line, Tumor ; Disease Models, Animal ; Down-Regulation/drug effects ; Drosophila melanogaster/genetics/*metabolism ; Female ; Humans ; MAP Kinase Signaling System/drug effects ; Male ; Mice ; Mitogen-Activated Protein Kinases/*metabolism ; Molecular Sequence Data ; Molecular Targeted Therapy ; Nerve Tissue Proteins/chemistry/genetics/*metabolism/*toxicity ; Nuclear Proteins/chemistry/genetics/*metabolism/*toxicity ; Phosphorylation ; Protein Stability/drug effects ; Ribosomal Protein S6 Kinases, 90-kDa/deficiency/genetics/*metabolism ; Spinocerebellar Ataxias/*metabolism/*pathology ; Transgenes ; ras Proteins/*metabolism

2011-10-29

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

Animals ; Cell Lineage ; Cell Movement ; Clone Cells/cytology/physiology ; Gene Knock-In Techniques ; Interneurons/*cytology/*physiology ; Mice ; Mitosis ; Neocortex/*cytology/embryology ; *Neural Inhibition ; Neural Stem Cells/*cytology/physiology ; *Neurogenesis ; Neuroglia/cytology/physiology ; Preoptic Area/cytology/embryology ; Telencephalon/*cytology/embryology

1089-7550

AIP Digital Archive

Physics

The interaction of nitric (NO) and nitrous (N2O) oxide with ultrathin (∼1.5–3.5 nm) oxide and oxynitride films on silicon has been studied by performing high resolution depth profiling using medium energy ion scattering and isotopic labeling methods. We observe that, after NO annealing at 850 °C, both O and N incorporate near the SiO2/Si interface. There is no nitrogen and little newly incorporated oxygen observed at the surface, implying that NO diffuses through the oxide film and dissociates and reacts at the interface. For N2O annealing, atomic oxygen resulting from decomposition of the gas can replace oxygen atoms in both oxide and oxynitride films. This replacement is most important at the surface, but also, to a smaller extent, occurs in the middle of the film. For ultrathin oxynitride films, oxide growth during reoxidation is faster in N2O than in pure O2. Atomic oxygen also influences the nitrogen distribution, which moves further into the film and accumulate at the new interface. We discuss the roles of atomic oxygen and peroxyl bridging oxygen species in explaining the observed phenomena. © 2000 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Medium energy ion scattering has been used to study the role of nitrogen in the thermal oxidation kinetics of ultrathin silicon oxynitrides. Oxynitride films with different amounts of nitrogen near the SiOxNy/Si interface and pure (control) SiO2/Si films were reoxidized in dry 18O2 under equivalent conditions. The spatial distribution of 18O incorporated into the films was analyzed by high-resolution depth profiling methods. Analogous to the pure SiO2 case, we observed two distinct regions where oxygen incorporation into the oxynitride films occurs: at/near the interface and near the outer oxide surface. The (near) interface oxide growth reaction is found to be significantly retarded by the presence of near-interfacial nitrogen (with a higher degree of the retardation for higher concentrations of nitrogen). The presence of nitrogen near the interface does not affect the surface exchange reaction. © 1997 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The paper discusses nitrogen engineering of ultrathin (〈5 nm) oxynitride gate dielectrics. The dielectric film that we have aimed for has two nitrogen enhanced layers: one at the SiO2/polysilicon interface to retard boron diffusion from the gate, and a smaller one peaked at the Si/SiO2 interface to increase the hot electron degradation resistance. We were able to produce this dielectric by a thermal (NO/O2/NO) process, aided by an understanding of the kinetics and thermodynamics of nitrogen incorporation in SiO2. © 1998 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The thermal oxynitridation of Si(100) in nitric oxide (NO) has been studied by high resolution medium energy ion scattering for ultrathin films. The nitrogen depth distribution and the composition of the films have been accurately determined. It is observed that for NO-grown films the nitrogen is distributed relatively evenly in the film, unlike the sharply peaked distribution observed in the case of SiO2 films that were subsequently annealed in NO. The width of the nitrogen distribution, as well as the oxynitride thickness, increase with temperature. It is further found that the total amount of nitrogen in the film and the ratio of nitrogen to oxygen increases with increasing oxynitridation temperature. These results have significant impact on our understanding of how nitrogen can be positioned in next-generation gate dielectrics. © 1997 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

The mechanism of thin (〈8 nm) oxide growth on Si(100) has been studied by high-resolution medium energy ion scattering in combination with oxygen isotope substitution in the T=800–900 °C and 0.1–1 Torr oxygen pressure regime. Isotopic labeling experiments demonstrate that the Deal–Grove model breaks down for these films. In addition to the traditional oxidation reaction at the Si/SiO2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region. © 1995 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case. © 1996 American Institute of Physics.

Electronic Resource

0040-6090

Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Physics

Electronic Resource

1432-1858

Springer Online Journal Archives 1860-2000

Electrical Engineering, Measurement and Control Technology

Technology

Abstract Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min.

Electronic Resource

1572-9567

Enskog theory ; equation of state ; fluids (dense) ; thermal conductivity ; viscosity

Springer Online Journal Archives 1860-2000

Physics

Abstract An attempt is made in this work to combine the Enskog theory of transport properties with the simple cubic Peng-Robinson (PR) equation of state. The PR equation of state provides the density dependence of the equilibrium radial distribution function. A slight empirical modification of the Enskog equation is proposed to improve the accuracy of correlation of thermal conductivity and viscosity coefficient for dense gases and liquids. Extensive comparisons with experimental data of pure fluids are made for a wide range of fluid states with temperatures from 90 to 500 K and pressures from 1 to 740 atm. The total average absolute deviations are 2.67% and 2.02% for viscosity and thermal conductivity predictions, respectively. The proposed procedure for predicting viscosity and thermal conductivity is simple and straightforward. It requires only critical parameters and acentric factors for the fluids.

Electronic Resource