Search Results - (Author, Cooperation:G. Wagoner)
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1L. A. Solt ; N. Kumar ; P. Nuhant ; Y. Wang ; J. L. Lauer ; J. Liu ; M. A. Istrate ; T. M. Kamenecka ; W. R. Roush ; D. Vidovic ; S. C. Schurer ; J. Xu ; G. Wagoner ; P. D. Drew ; P. R. Griffin ; T. P. Burris
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-04-19Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Autoimmunity/*drug effects/immunology ; Cell Differentiation/*drug effects ; Drug Inverse Agonism ; HEK293 Cells ; Humans ; Interleukin-17/biosynthesis/immunology ; Interleukins/biosynthesis/immunology ; Ligands ; Mice ; Mice, Inbred C57BL ; Models, Molecular ; Nuclear Receptor Subfamily 1, Group F, Member 1/antagonists & ; inhibitors/genetics/metabolism ; Nuclear Receptor Subfamily 1, Group F, Member 3/antagonists & ; Sulfonamides/*pharmacology ; Th17 Cells/*cytology/drug effects/*immunology/secretion ; Thiazoles/*pharmacologyPublished by: -
2Jin, Y. ; Ma, X. F. ; Wagoner, G. A. ; Alexander, M. ; Zhang, X.-C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the measurement of optically generated THz radiation from over ten different metal/GaAs interfaces. We observe an anomalous behavior in the THz beams emitted from these interfaces. In contrast to THz radiation generated at normal incidence where the amplitude of the THz signal decreases with increasing metal film thickness, at oblique incidence we observe increased THz emission with increasing metal thickness until reaching a maximum near 80 A(ring).Type of Medium: Electronic ResourceURL: -
3Sun, F. G. ; Wagoner, G. A. ; Zhang, X.-C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Antennas based on commercially available GaAs as a photoconductor with a subnanosecond photocarrier lifetime have been used to detect subpicosecond free-space electromagnetic radiation (THz pulses). At low optical gating intensities (≤1 mW/100 μm2), GaAs based antennas exhibit a higher responsivity and signal-to-noise ratio than typical antennas based on radiation-damaged silicon-on-sapphire. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Li, M. ; Sun, F. G. ; Wagoner, G. A. ; Alexander, M. ; Zhang, X.-C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the recent measurement and analysis of the transmitted and pseudoreflected optically induced terahertz (THz) beams emitted from a semiconductor wafer under femtosecond laser illumination, where the static electric field is either parallel or perpendicular to the surface. In general, the amplitude of the transmitted THz field is different from that of pseudoreflected THz field, except at the Brewster angle. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: