Search Results - (Author, Cooperation:G. T. Kim)

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  1. 1
    Staff View
    Publication Date:
    2011-02-05
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Kim, G. T. ; Park, J. G. ; Lee, J. Y. ; Yu, H. Y. ; Choi, E. S. ; Suh, D. S. ; Ha, Y. S. ; Park, Y. W.

    [S.l.] : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    We propose simple configurations to measure the thermoelectric power and the four-probe resistivity simultaneously for different types of samples.© 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  3. 3
    Kim, G. T. ; Park, J. G. ; Park, Y. W.

    [S.l.] : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    We present a nonswitching van der Pauw technique using two independent ac current sources and two lock-in amplifiers. This technique may be useful to measure the resistance of delicate samples that might be easily damaged by electric shocks induced from switching, and can be extended to measure the anisotropy of resistance. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  4. 4
    Gu, G. ; Burghard, M. ; Kim, G. T. ; Düsberg, G. S. ; Chiu, P. W. ; Krstic, V. ; Roth, S.

    [S.l.] : American Institute of Physics (AIP)
    Published 2001
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Single crystalline germanium nanowires have been synthesized from gold nanoparticles based on a vapor–liquid–solid growth mechanism. Germanium powder was evaporated at 950 °C, and deposited onto gold nanoparticles at 500 °C using argon as a carrier gas. The diameter of the germanium nanowires ranged from 20 to 180 nm when gold thin films were utilized as the substrate, while the nanowires grown from 10 nm Au particles showed a narrower diameter distribution centered at 28 nm. The growth direction of germanium nanowires is along the [111] direction, determined by high resolution transmission electron microscopy. Transport measurements on individual Ge nanowires indicate that the wires are heavily doped during growth and that transport data can be explained by the thermal fluctuation tunneling conduction model. © 2001 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  5. 5
    Chiu, P. W. ; Gu, G. ; Kim, G. T. ; Philipp, G. ; Roth, S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2001
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Metallofullerene nanotube peapods were prepared by introducing Dy@C82 into the interior space of single-walled carbon nanotubes. Transport measurements show that the Dy@C82 molecules function as electron donors and transfer charge to the carbon nanotube host. The amount of charge transferred varies with the temperature. At room temperature, the doped nanotube shows p-type behavior as seen from the response to a back gate. As the temperature decreases, the conductance becomes n type and at T〈215 K metallic behavior is observed, indicating the degenerate state by doping. Below about 75 K, single-electron charging phenomena dominate the transport and show irregular Coulomb blockade oscillation, implying that the insertion of Dy@C82 splits the tube into a series of several quantum dots. © 2001 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  6. 6
    Kim, G. T. ; Muster, J. ; Krstic, V.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2000
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A field-effect transistor (FET) with a channel length of ∼100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5 nm×10 nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10−5 cm2/V s at T=131 K to 9.6×10−3 cm2/V s at T=192 K with an activation energy of Ea=0.18 eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼4 nm. © 2000 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  7. 7
    Staff View
    ISSN:
    1573-7357
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Physics
    Notes:
    Abstract The superconducting Sr 1−x K x BiO 3 samples with x = 0.45 – 0.6 were synthesized by the high-pressure-high-temperature technique in a belt type apparatus (2 GPa, 700 °C, 1 h, Pt capsules) with stoichiometric mixtures of Sr 2 Bi 2 O 5 , Bi 2 O 3 and KO 2 as described earlier. 1 The X-ray diffraction results appear as a single perovskite-like phase. The superconductivity occurs at T c ∼ 12 K in the A. C. susceptibility measurement. The onset (zero resistivity) temperature of superconductivity in resistivity measurement of the investigated sample was $$T_{conset} = 12.5{\text{ }}K(T_{czero} = 10.2{\text{ }}K)$$ . The transition temperature region was a little bit broad and a shoulder was present about 11.3 K indicating probably the existence of crystallites of different K content. The particularly interesting point is that the resistance begins to reappear at T 〈 6 K at zero magnetic field. As the external magnetic field is applied, the reentrant resistance disappears and superconductivity is recovered until the applied magnetic field becomes higher than 0.65 Tesla. The superconductivity for T 〈 6 K is destroyed for the higher magnetic field. The Tc onset decreases as the magnetic field increases like in the BCS type superconductors. The transition region becomes broader under the magnetic field, which indicate a kind of vortex transition as in the case of high T c cuprates.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses