Search Results - (Author, Cooperation:G. Park)
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1Bae, J.-Y., Lee, I., Kim, J. I., Park, S., Yoo, K., Park, M., Kim, G., Park, M. S., Lee, J.-Y., Kang, C., Kim, K., Park, M.-S.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-06-14Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
2Park, K. C., Kim, S. W., Jeon, J. Y., Jo, A. R., Choi, H. J., Kim, J., Lee, H. G., Kim, Y., Mills, G. B., Noh, S. H., Lee, M. G., Park, E. S., Cheong, J.-H.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-04-04Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
3Kwon, S. M., Won, J. K., Jo, J.-W., Kim, J., Kim, H.-J., Kwon, H.-I., Kim, J., Ahn, S., Kim, Y.-H., Lee, M.-J., Lee, H.-i., Marks, T. J., Kim, M.-G., Park, S. K.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-04-14Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
4Zhang, W., Liu, B., Wu, W., Li, L., Broom, B. M., Basourakos, S. P., Korentzelos, D., Luan, Y., Wang, J., Yang, G., Park, S., Azad, A. K., Cao, X., Kim, J., Corn, P. G., Logothetis, C. J., Aparicio, A. M., Chinnaiyan, A. M., Navone, N., Troncoso, P., Thompson, T. C.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-02-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
5Jesse G. Park, Michael L. Aubrey, Julia Oktawiec, Khetpakorn Chakarawet, Lucy E. Darago, Fernande Grandjean, Gary J. Long, Jeffrey R. Long
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-06-29Publisher: American Chemical Society (ACS)Print ISSN: 0002-7863Electronic ISSN: 1520-5126Topics: Chemistry and PharmacologyPublished by: -
6K. Celebi ; J. Buchheim ; R. M. Wyss ; A. Droudian ; P. Gasser ; I. Shorubalko ; J. I. Kye ; C. Lee ; H. G. Park
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-04-20Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
7J. Luo ; J. H. Im ; M. T. Mayer ; M. Schreier ; M. K. Nazeeruddin ; N. G. Park ; S. D. Tilley ; H. J. Fan ; M. Gratzel
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-09-27Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
8J. Kim ; S. S. Baik ; S. H. Ryu ; Y. Sohn ; S. Park ; B. G. Park ; J. Denlinger ; Y. Yi ; H. J. Choi ; K. S. Kim
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-08-15Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
9Sri Krishna, Peaches Ulrich, Eric Wilson, Falguni Parikh, Pooja Narang, Shanshan Yang, Amelia K. Read, Seunghee Kim-Schulze, Jin G. Park, Marshall Posner, Melissa A. Wilson Sayres, Andrew Sikora, Karen S. Anderson
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-11-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 0008-5472Electronic ISSN: 1538-7445Topics: MedicinePublished by: -
10H. Won ; H. R. Lee ; H. Y. Gee ; W. Mah ; J. I. Kim ; J. Lee ; S. Ha ; C. Chung ; E. S. Jung ; Y. S. Cho ; S. G. Park ; J. S. Lee ; K. Lee ; D. Kim ; Y. C. Bae ; B. K. Kaang ; M. G. Lee ; E. Kim
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-06-16Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Adaptor Proteins, Signal Transducing/*genetics ; Animals ; Antimetabolites/pharmacology ; *Autistic Disorder/genetics/metabolism ; Behavior, Animal/*drug effects/physiology ; Benzamides/*pharmacology ; Cycloserine/*pharmacology ; Disease Models, Animal ; Female ; Male ; Mice ; Mice, Inbred C57BL ; Nerve Tissue Proteins/*genetics ; Pyrazoles/*pharmacology ; Receptors, N-Methyl-D-Aspartate/*agonists/*metabolismPublished by: -
11S. K. Kang ; R. K. Murphy ; S. W. Hwang ; S. M. Lee ; D. V. Harburg ; N. A. Krueger ; J. Shin ; P. Gamble ; H. Cheng ; S. Yu ; Z. Liu ; J. G. McCall ; M. Stephen ; H. Ying ; J. Kim ; G. Park ; R. C. Webb ; C. H. Lee ; S. Chung ; D. S. Wie ; A. D. Gujar ; B. Vemulapalli ; A. H. Kim ; K. M. Lee ; J. Cheng ; Y. Huang ; S. H. Lee ; P. V. Braun ; W. Z. Ray ; J. A. Rogers
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-01-19Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: *Absorbable Implants/adverse effects ; Administration, Cutaneous ; Animals ; Body Temperature ; Brain/*metabolism/surgery ; Electronics/*instrumentation ; Equipment Design ; Hydrolysis ; Male ; Monitoring, Physiologic/adverse effects/*instrumentation ; Organ Specificity ; Pressure ; *Prostheses and Implants/adverse effects ; Rats ; Rats, Inbred Lew ; *Silicon ; Telemetry/instrumentation ; Wireless Technology/instrumentationPublished by: -
12Iezaki, T., Fukasawa, K., Horie, T., Park, G., Robinson, S., Nakaya, M., Fujita, H., Onishi, Y., Ozaki, K., Kanayama, T., Hiraiwa, M., Kitaguchi, Y., Kaneda, K., Yoneda, Y., Takarada, T., Guo, X. E., Kurose, H., Hinoi, E.
The Company of Biologists
Published 2018Staff ViewPublication Date: 2018-08-02Publisher: The Company of BiologistsPrint ISSN: 0950-1991Electronic ISSN: 1477-9129Topics: BiologyKeywords: Musculoskeletal systemPublished by: -
13Lee, D. H. ; Kim, D. W. ; Leem, Y. A. ; Oh, J. C. ; Park, G. H. ; Woo, J. C. ; Yoo, K. H.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Photoluminescence (PL) and PL excitation (PLE) experiments on a GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well are reported. In PLE, the seven peaks, four related to the heavy-hole coupled and the rest to the light-hole coupled excitonic states, are observed. The positions of seven peaks observed in PLE are in good agreement with the calculated results of multi-band envelope function approximation using the transfer matrix method. The result of the temperature-dependent PL above 100 K shows that, even though the wavefunctions are localized in different wells separated by 8 monolayer barrier, the heavy-hole coupled excitons in the two lowest levels are in thermal equilibrium. The observed activation energy is equal to the difference between the two levels.Type of Medium: Electronic ResourceURL: -
14Huffaker, D. L. ; Park, G. ; Zou, Z. ; Shchekin, O. B. ; Deppe, D. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Room-temperature lasing at the wavelength of 1.31 μm is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm2 is obtained at a wavelength of 1.23 μm. The room-temperature lasing at 1.31 μm is obtained with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings. The temperature-dependent threshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Jo, W. ; Park, G. W. ; Kim, D. W. ; Noh, T. W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740 °C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650 °C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Cunningham, C. E. ; Park, G. S. ; Cabrera, B. ; Huber, M. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The absolute magnetic penetration depth of a superconducting niobium film is measured using fluxoid quantization. Laser pulses drive part of a thin, planar niobium loop normal, changing its quantum fluxoid state. We determine the total inductance of the loop by measuring the coupling of the fluxoid to a superconducting quantum interference device at various loop temperatures. We fit the temperature dependence of the inductance data to the Bardeen–Cooper–Schrieffer (BCS) theory to determine the magnetic and kinetic inductances. The kinetic inductance is directly related to the penetration depth through the geometry of the loop, and the measured penetration depth agrees well with the BCS theory.Type of Medium: Electronic ResourceURL: -
17Choi, W. B. ; Chung, D. S. ; Kang, J. H. ; Kim, H. Y. ; Jin, Y. W. ; Han, I. T. ; Lee, Y. H. ; Jung, J. E. ; Lee, N. S. ; Park, G. S. ; Kim, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A fully sealed field-emission display 4.5 in. in size has been fabricated using single-wall carbon nanotube (CNT)-organic binders. The fabricated displays were fully scalable at low temperature, below 415 °C, and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1 V/μm and field emission current of 1.5 mA at 3 V/μm (J=90 μA/cm2) were observed. Brightness of 1800 cd/m2 at 3.7 V/μm was observed on the entire area of a 4.5 in. panel from the green phosphor-indium–tin–oxide glass. The fluctuation of the current was found to be about 7% over a 4.5 in. cathode area. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Bidnyk, S. ; Schmidt, T. J. ; Park, G. H. ; Song, J. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the results of a study of spatially resolved surface-emitted stimulated emission in GaN epilayer samples under conditions of strong optical pumping. We observe that even at excitation powers near the damage threshold, no surface-emitted stimulated emission occurs from samples with a high quality GaN epilayer. In parts of the samples with inferior surface quality, we show that stimulated emission comes from cracks, burned spots, and other imperfections, and is due to the scattering of a photon flux propagating parallel to the surface. Our results suggest that these defects are effective scattering centers and can severely affect the accuracy of optical gain measurements. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Park, G. ; Shchekin, O. B. ; Huffaker, D. L. ; Deppe, D. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Data are presented on the lasing transitions from InGaAs/GaAs quantum dots that exhibit four well-resolved energy transitions, with the electronic state density of a two-dimensional harmonic oscillator. Lasing has been obtained on the second and third transitions, depending on the cavity (gain) length, with the longest lasing wavelength measured to be 1.19 μm. The temperature dependence of threshold is studied and regions of nearly temperature-independent threshold are found. Interesting aspects of the unique electronic state density for lasers are discussed. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Kwon, Yong-Hwan ; Shee, S. K. ; Gainer, G. H. ; Park, G. H. ; Hwang, S. J. ; Song, J. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Time-resolved photoluminescence has been employed to study the donor-acceptor pair recombination kinetics of the yellow (∼2.3 eV) and blue (∼2.8 eV) luminescence bands in Si- and Mg-doped GaN layers, respectively. As the Si doping concentration in Si-doped GaN increases, the lifetime τ1/e of the yellow luminescence decreases, indicating that a shallow Si donor is the origin of the yellow luminescence. The blue luminescence is most likely due to a shallow Mg acceptor and a deep donor composed of a Mg acceptor-nitrogen vacancy complex, as seen by the independence of τ1/e on the Mg concentration measured by secondary ion mass spectroscopy in the range (2.5–6.0)×1019 cm−3. As the temperature is increased from 10 to 300 K, the lifetimes for the yellow and blue luminescence remain nearly constant, indicating that the distribution of electrons and holes bound to donors and acceptors does not change much with increasing temperature. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: