Search Results - (Author, Cooperation:G. Kroll)
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1Doitsidou, M., Minevich, G., Kroll, J. R., Soete, G., Gowtham, S., Korswagen, H. C., Sebastiaan van Zon, J., Hobert, O.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-01-05Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
2M. G. Aartsen ; R. Abbasi ; Y. Abdou ; M. Ackermann ; J. Adams ; J. A. Aguilar ; M. Ahlers ; D. Altmann ; J. Auffenberg ; X. Bai ; M. Baker ; S. W. Barwick ; V. Baum ; R. Bay ; J. J. Beatty ; S. Bechet ; J. Becker Tjus ; K. H. Becker ; M. L. Benabderrahmane ; S. BenZvi ; P. Berghaus ; D. Berley ; E. Bernardini ; A. Bernhard ; D. Bertrand ; D. Z. Besson ; G. Binder ; D. Bindig ; M. Bissok ; E. Blaufuss ; J. Blumenthal ; D. J. Boersma ; S. Bohaichuk ; C. Bohm ; D. Bose ; S. Boser ; O. Botner ; L. Brayeur ; H. P. Bretz ; A. M. Brown ; R. Bruijn ; J. Brunner ; M. Carson ; J. Casey ; M. Casier ; D. Chirkin ; A. Christov ; B. Christy ; K. Clark ; F. Clevermann ; S. Coenders ; S. Cohen ; D. F. Cowen ; A. H. Cruz Silva ; M. Danninger ; J. Daughhetee ; J. C. Davis ; M. Day ; C. De Clercq ; S. De Ridder ; P. Desiati ; K. D. de Vries ; M. de With ; T. DeYoung ; J. C. Diaz-Velez ; M. Dunkman ; R. Eagan ; B. Eberhardt ; B. Eichmann ; J. Eisch ; R. W. Ellsworth ; S. Euler ; P. A. Evenson ; O. Fadiran ; A. R. Fazely ; A. Fedynitch ; J. Feintzeig ; T. Feusels ; K. Filimonov ; C. Finley ; T. Fischer-Wasels ; S. Flis ; A. Franckowiak ; K. Frantzen ; T. Fuchs ; T. K. Gaisser ; J. Gallagher ; L. Gerhardt ; L. Gladstone ; T. Glusenkamp ; A. Goldschmidt ; G. Golup ; J. G. Gonzalez ; J. A. Goodman ; D. Gora ; D. T. Grandmont ; D. Grant ; A. Gross ; C. Ha ; A. Haj Ismail ; P. Hallen ; A. Hallgren ; F. Halzen ; K. Hanson ; D. Heereman ; D. Heinen ; K. Helbing ; R. Hellauer ; S. Hickford ; G. C. Hill ; K. D. Hoffman ; R. Hoffmann ; A. Homeier ; K. Hoshina ; W. Huelsnitz ; P. O. Hulth ; K. Hultqvist ; S. Hussain ; A. Ishihara ; E. Jacobi ; J. Jacobsen ; K. Jagielski ; G. S. Japaridze ; K. Jero ; O. Jlelati ; B. Kaminsky ; A. Kappes ; T. Karg ; A. Karle ; J. L. Kelley ; J. Kiryluk ; J. Klas ; S. R. Klein ; J. H. Kohne ; G. Kohnen ; H. Kolanoski ; L. Kopke ; C. Kopper ; S. Kopper ; D. J. Koskinen ; M. Kowalski ; M. Krasberg ; K. Krings ; G. Kroll ; J. Kunnen ; N. Kurahashi ; T. Kuwabara ; M. Labare ; H. Landsman ; M. J. Larson ; M. Lesiak-Bzdak ; M. Leuermann ; J. Leute ; J. Lunemann ; J. Madsen ; G. Maggi ; R. Maruyama ; K. Mase ; H. S. Matis ; F. McNally ; K. Meagher ; M. Merck ; T. Meures ; S. Miarecki ; E. Middell ; N. Milke ; J. Miller ; L. Mohrmann ; T. Montaruli ; R. Morse ; R. Nahnhauer ; U. Naumann ; H. Niederhausen ; S. C. Nowicki ; D. R. Nygren ; A. Obertacke ; S. Odrowski ; A. Olivas ; A. O'Murchadha ; L. Paul ; J. A. Pepper ; C. Perez de los Heros ; C. Pfendner ; D. Pieloth ; E. Pinat ; J. Posselt ; P. B. Price ; G. T. Przybylski ; L. Radel ; M. Rameez ; K. Rawlins ; P. Redl ; R. Reimann ; E. Resconi ; W. Rhode ; M. Ribordy ; M. Richman ; B. Riedel ; J. P. Rodrigues ; C. Rott ; T. Ruhe ; B. Ruzybayev ; D. Ryckbosch ; S. M. Saba ; T. Salameh ; H. G. Sander ; M. Santander ; S. Sarkar ; K. Schatto ; F. Scheriau ; T. Schmidt ; M. Schmitz ; S. Schoenen ; S. Schoneberg ; A. Schonwald ; A. Schukraft ; L. Schulte ; O. Schulz ; D. Seckel ; Y. Sestayo ; S. Seunarine ; R. Shanidze ; C. Sheremata ; M. W. Smith ; D. Soldin ; G. M. Spiczak ; C. Spiering ; M. Stamatikos ; T. Stanev ; A. Stasik ; T. Stezelberger ; R. G. Stokstad ; A. Stossl ; E. A. Strahler ; R. Strom ; G. W. Sullivan ; H. Taavola ; I. Taboada ; A. Tamburro ; A. Tepe ; S. Ter-Antonyan ; G. Tesic ; S. Tilav ; P. A. Toale ; S. Toscano ; E. Unger ; M. Usner ; N. van Eijndhoven ; A. Van Overloop ; J. van Santen ; M. Vehring ; M. Voge ; M. Vraeghe ; C. Walck ; T. Waldenmaier ; M. Wallraff ; C. Weaver ; M. Wellons ; C. Wendt ; S. Westerhoff ; N. Whitehorn ; K. Wiebe ; C. H. Wiebusch ; D. R. Williams ; H. Wissing ; M. Wolf ; T. R. Wood ; K. Woschnagg ; D. L. Xu ; X. W. Xu ; J. P. Yanez ; G. Yodh ; S. Yoshida ; P. Zarzhitsky ; J. Ziemann ; S. Zierke ; M. Zoll
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-11-23Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3J. G. Kroll; W. Uilhoorn; K. L. van der Enden; D. de Jong; K. Watanabe; T. Taniguchi; S. Goswami; M. C. Cassidy; L. P. Kouwenhoven
Nature Publishing Group (NPG)
Published 2018Staff ViewPublication Date: 2018-11-06Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2041-1723Topics: BiologyChemistry and PharmacologyNatural Sciences in GeneralPhysicsPublished by: -
4Staff View
Publication Date: 2018-03-06Publisher: Oxford University PressPrint ISSN: 1084-5453Electronic ISSN: 1930-8892Topics: HistoryPublished by: -
5Kimachi, Y. ; Hidaka, Y. ; Ohno, T. R. ; Kroll, G. H. ; Weaver, J. H.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Photoemission results demonstrate that atom deposition of Ti, Cr, and Cu at 20 K on the high-temperature superconductors (HTSs) dramatically reduces interfacial reaction relative to 300 K growth but does not completely eliminate it. Thin Ti-O or Cr-O layers are formed during atom deposition of ∼2 A(ring) of Ti or Cr on YBa2Cu3O7 or Bi2Sr2Ca1Cu2O8 because oxygen is withdrawn from the Bi-O and/or Cu-O layers. Interfacial reactions are diffusion limited at 20 K, and metal overlayers nucleate on the reacted layers. These metal layers are more uniform than those grown at 300 K because clustering is suppressed. There is no additional disruption for Cr/HTS interfaces when warmed to 300 K, but increased disruption is evident for Ti/HTS interfaces. The differences reflect the stabilities of Cr and Ti in contact with their own interfacial oxide. Cu atom deposition on Bi2Sr2Ca1Cu208(100) at 20 K also leads to much less disruption than observed for deposition at 300 K.Type of Medium: Electronic ResourceURL: -
6Kroll, G. ; Plüschau, M. ; Dinse, K.-P. ; van Willigen, H.
College Park, Md. : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: Utilizing the high time and phase resolution of Fourier transform electron paramagnetic resonance, the buildup and decay kinetics of the transient radical pair Zn tetraphenylporphyrin+/Duroquinone− in ethanol could be studied by detecting the dispersive component in the Fourier transformed free induction decays of the fully separated radical anions. The dispersive line components originate from the exchange coupling J of the radical pair in its metastable state trapped by an attractive temperature dependent Coulomb interaction U(rc,T) at an equilibrium distance rc. The decay rate constant kd into free ions was studied over the temperature range of 225–298 K and varied from kd=3.2×106 to 10×106 s−1. This change in kd could be fully rationalized in terms of the temperature dependence of the solvent dielectric constant (leading to a variation of the cage potential from 0.07 to 0.12 eV) and the diffusion constant. The buildup rate constants were consistent with the assumption of a diffusion-controlled electron transfer process as a primary step.Type of Medium: Electronic ResourceURL: -
7Kroll, G. H. ; Ohno, T. R. ; Weaver, J. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Three different ways of forming oxide overlayers on GaAs(110) have been examined with x-ray photoemission. First, Cr atoms were deposited onto cleaved GaAs(110) at 300 K, producing a disrupted region over which Cr metal grew. Subsequent exposure to O2 resulted in an inhomogeneous overlayer with areas of thick Cr2O3-like oxides in addition to As and Ga oxides. GaAs oxidation was enhanced by Cr-induced surface disruption, but there was no evidence of a catalytic process. Second, metallic clusters of Cr containing hundreds of atoms were condensed onto GaAs(110). In this case, no substrate disruption was observed at low temperature. O2 exposure resulted in Cr2O3 formation with small amounts of Ga2O3 and no detectable As2O3. Third, Cr atoms and O2 molecules were condensed onto a Xe buffer layer on GaAs(110) to produce Cr2O3-like species out of contact with the semiconductor. Buffer layer desorption brought these Cr2O3 aggregates into contact with the substrate. The overlayer produced in this manner was abrupt, and there was no evidence of GaAs oxidation.Type of Medium: Electronic ResourceURL: -
8OHNO, T. R. ; KROLL, G. H. ; WEAVER, J. H. ; CHIBANTE, L. P. F. ; SMALLEY, R. E.
[s.l.] : Nature Publishing Group
Published 1992Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] SIR - The announcement by H. Sekine et al. of superconductivity in I- and Br-doped fullerenes generated much curiosity (see ref. 1) because iodine-fullerene mixing was not expected, based on comparison with graphite-intercalated compounds (for example, ref. 2), and because superconductivity ...Type of Medium: Electronic ResourceURL: