Search Results - (Author, Cooperation:G. Ji)
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1Staff View
Publication Date: 2018-02-22Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
2Staff View
Publication Date: 2018-02-22Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: behaviour, ecology, evolutionPublished by: -
3F. Grusdt, M. Kánasz-Nagy, A. Bohrdt, C. S. Chiu, G. Ji, M. Greiner, D. Greif, and E. Demler
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-03-22Publisher: American Physical Society (APS)Electronic ISSN: 2160-3308Topics: PhysicsPublished by: -
4D. Greif ; M. F. Parsons ; A. Mazurenko ; C. S. Chiu ; S. Blatt ; F. Huber ; G. Ji ; M. Greiner
American Association for the Advancement of Science (AAAS)
Published 2016Staff ViewPublication Date: 2016-02-27Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
5H. Cao, F. Feng, M. Xun, P. Huang, Y. G. Li, T. Ji, G. Q. Wei, W. W. Zhang, H. Q. Yang
Wiley-Blackwell
Published 2018Staff ViewPublication Date: 2018-01-24Publisher: Wiley-BlackwellPrint ISSN: 1351-0754Electronic ISSN: 1365-2389Topics: GeosciencesAgriculture, Forestry, Horticulture, Fishery, Domestic Science, NutritionPublished by: -
6Peng, C. K. ; Ji, G. ; Kumar, N. S. ; Morkoç, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Employing a structure consisting of n+-InAs/InGaAs and InAs/GaAs strained-layer superlattices (SLS's) grown by molecular beam epitaxy on GaAs films, nonalloyed contact resistances less than 8.5×10−8 Ω cm2 have been obtained. Self-consistent simulations show that these extremely small nonalloyed contact resistances are due to the suppression of the depletion depth in the GaAs channel and tunneling through the SLS layer. Similar structures on InGaAs channels have led to nonalloyed specific contact resistances of about 1.5×10−8 Ω cm2. These results represent the smallest figures reported for these important material systems.Type of Medium: Electronic ResourceURL: -
7Huang, D. ; Ji, G. ; Reddy, U. K. ; Morkoç, H. ; Xiong, F. ; Tombrello, T. A.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The photoreflectance (PR) spectra of bulk AlxGa1−xAs alloys with x≤0.45 were studied. The observed line shapes from different samples suggest that the PR technique is very sensitive to the material quality, surface condition, and the background impurities. The energy gap derived from the PR spectra compared well to that obtained from the absorption spectra. The relationship between the energy gap and the Al mole fraction value x was established through the nuclear resonance reaction analysis. The electric field near the surface was calculated from the periodicity of Franz–Keldysh oscillations observed in many of the samples. From our analysis, we believe that the number of oscillations shown in PR spectra corresponds to sample quality, in general. We also believe that the low-field-like line shape is mainly caused by the fluctuation of Al distribution along the growth direction. An additional feature related to the impurity transition was also observed in the spectra.Type of Medium: Electronic ResourceURL: -
8Ji, G. ; Huang, D. ; Reddy, U. K. ; Henderson, T. S. ; Houdré, R. ; Morkoç, H.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Low-temperature optical transmission spectra of several InxGa1−xAs/GaAs strained multiple quantum wells (MQWs) with different well widths and In mole fractions have been measured. The excitonic transitions up to 3C-3H are observed. The notation nc-mH(L) is used to indicate the transitions related to the nth conduction and mth valence heavy (light) hole subbands. Steplike structures corresponding to band-to-band transitions are also observed, which are identified as 1C-1L transitions. The calculated transition energies, taking into account both the strain and the quantum well effects, are in good agreement with the measured values. In these calculations the lattice mismatch between the GaAs buffer and the InGaAs/GaAs MQW is taken into account and the valence-band offset Qv is chosen as an adjustable parameter. By fitting the experimental results to our calculations, we conclude that the light holes are in GaAs barrier region (type II MQW) and the valence-band offset Qv is determined to be 0.30. A possible system in which the transition from type I to type II for light holes might be observed is also discussed.Type of Medium: Electronic ResourceURL: -
9Reddy, U. K. ; Houdré, R. ; Munns, G. ; Ji, G. ; Morkoç, H. ; Longerbone, M. ; Davis, L. ; Gu, B. P. ; Otsuka, N.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We report photoreflectance studies on GaAs/(Al,Ga)As multiple quantum wells grown on Si and Ge substrates. The sharp spectral features observed from various subband transitions indicate that good epilayer quality can be obtained on nonpolar substrates using suitable growth techniques. The experimental results agree well with calculated values based on the envelope function approximation, when the effect of residual strain resulting from the large difference in thermal expansion between GaAs and Si is taken into account.Type of Medium: Electronic ResourceURL: -
10Reddy, U. K. ; Ji, G. ; Henderson, T. ; Morkoç, H. ; Schulman, J. N.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Room-temperature photoreflectance has been used to investigate a series of GaAs/(Al,Ga)As multiple quantum-well structures. In addition to the allowed (as high as n=5) and symmetry forbidden transitions, we have observed transitions involving the so-called "unconfined'' states, which have received less attention so far. We have examined these transitions more carefully by studying a low barrier multiple quantum-well structure and observed transitions as far as 200 meV beyond the barrier gap. By using a simple two-band tight-binding model, the energies and matrix elements for these unconfined transitions were calculated and shown to agree with the experimental values determined by fitting the photoreflectance spectra to the theoretical line-shape expression.Type of Medium: Electronic ResourceURL: -
11Staff View
ISSN: 0022-3697Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
12Staff View
ISSN: 0022-0728Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
13Staff View
ISSN: 0022-1139Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
14Staff View
ISSN: 0038-1101Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsType of Medium: Electronic ResourceURL: -
15Staff View
ISSN: 0039-9140Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
16Nkengfack, A.E. ; Kouam, J. ; Vouffo, W.T. ; Fomum, Z.T. ; Dagne, E. ; Sterner, O. ; Browne, L.M. ; Ji, G.
Amsterdam : ElsevierStaff ViewISSN: 0031-9422Keywords: Erythrina eriotricha ; Erythrina sigmoidea ; Leguminosae ; pentacyclic triterpene. ; prenylated dihydroflavonol ; prenylated flavanone ; stem barkSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyType of Medium: Electronic ResourceURL: -
17Staff View
ISSN: 0275-1062Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
18Staff View
ISSN: 0275-1062Keywords: Sun - observational method of magnetic fieldsSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
19Staff View
ISSN: 0045-2068Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyType of Medium: Electronic ResourceURL: -
20Corbisier, P. ; Ji, G. ; Nuyts, G. ; Mergeay, M. ; Silver, S.
Oxford, UK : Blackwell Publishing Ltd
Published 1993Staff ViewISSN: 1574-6968Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: BiologyNotes: Abstract pC101, a novel shuttle vector between Escherichia coli and Straphylococcus aureus carrying the lux genes encoding luciferase from Vibrio harveyi, selectable ampicillin and chloramphenicol markers and origins of replication for Gram-negative and Gram-positive bacteria has been constructed. The inducibility of the arsenic and cadmium operon from S. aureus plasmid pI258 to different ions has been tested in E. coli and in S. aureus with two fusions in pC101: an arsB - luxAB and a cadA-luxAB transcriptional gene fusion. Patterns of induction are influenced by the host strain and are slightly different from previous reports using the blaZ gene as reporter gene.Type of Medium: Electronic ResourceURL: