Search Results - (Author, Cooperation:G. Chang)
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1Santos Rocha, C., Hirao, L. A., Weber, M. G., Mendez-Lagares, G., Chang, W. L. W., Jiang, G., Deere, J. D., Sparger, E. E., Roberts, J., Barry, P. A., Hartigan-O'Connor, D. J., Dandekar, S.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-06-14Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
2Mure, L. S., Le, H. D., Benegiamo, G., Chang, M. W., Rios, L., Jillani, N., Ngotho, M., Kariuki, T., Dkhissi-Benyahya, O., Cooper, H. M., Panda, S.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-03-16Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Cell Biology, Medicine, Diseases, Online OnlyPublished by: -
3Staff View
Publication Date: 2018-01-10Publisher: BMJ Publishing GroupPrint ISSN: 0017-5749Electronic ISSN: 1468-3288Topics: MedicineKeywords: Open accessPublished by: -
4Y. G. Chang ; S. E. Cohen ; C. Phong ; W. K. Myers ; Y. I. Kim ; R. Tseng ; J. Lin ; L. Zhang ; J. S. Boyd ; Y. Lee ; S. Kang ; D. Lee ; S. Li ; R. D. Britt ; M. J. Rust ; S. S. Golden ; A. LiWang
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-06-27Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Bacterial Proteins/*chemistry/genetics/*metabolism ; *Circadian Rhythm ; Circadian Rhythm Signaling Peptides and Proteins/*chemistry/genetics/*metabolism ; Phosphorylation ; Protein Folding ; Protein Structure, Secondary ; Synechococcus/metabolism/*physiologyPublished by: -
5S. Y. Xu ; I. Belopolski ; N. Alidoust ; M. Neupane ; G. Bian ; C. Zhang ; R. Sankar ; G. Chang ; Z. Yuan ; C. C. Lee ; S. M. Huang ; H. Zheng ; J. Ma ; D. S. Sanchez ; B. Wang ; A. Bansil ; F. Chou ; P. P. Shibayev ; H. Lin ; S. Jia ; M. Z. Hasan
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-07-18Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
6Klann, J. E., Kim, S. H., Remedios, K. A., He, Z., Metz, P. J., Lopez, J., Tysl, T., Olvera, J. G., Ablack, J. N., Cantor, J. M., Boland, B. S., Yeo, G., Zheng, Y., Lu, L.-F., Bui, J. D., Ginsberg, M. H., Petrich, B. G., Chang, J. T.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-06-05Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
7Chen, W. Y. ; Sun, D. H. ; Chang, G. L. ; Feng, X. D. ; Chang, G. B.
New York : Wiley-Blackwell
Published 1983Staff ViewISSN: 0360-6384Keywords: Chemistry ; Polymer and Materials ScienceSource: Wiley InterScience Backfile Collection 1832-2000Topics: Chemistry and PharmacologyAdditional Material: 5 Ill.Type of Medium: Electronic ResourceURL: -
8Staff View
Publication Date: 2018-06-02Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
9Staff View
Publication Date: 2018-02-12Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
10Hsu, C.-Y., Chang, G.-C., Chen, Y.-J., Hsu, Y.-C., Hsiao, Y.-J., Su, K.-Y., Chen, H.-Y., Lin, C.-Y., Chen, J.-S., Chen, Y.-J., Hong, Q.-S., Ku, W.-H., Wu, C.-Y., Ho, B.-C., Chiang, C.-C., Yang, P.-C., Yu, S.-L.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-02-16Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
11H. Cayla, C. Carcy, Q. Bouton, R. Chang, G. Carleo, M. Mancini, and D. Clément
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-06-27Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Matter waves and collective properties of cold atoms and moleculesPublished by: -
12Staff View
Publication Date: 2018-07-27Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
13Riccardi, K., Ryu, S., Lin, J., Yates, P., Tess, D., Li, R., Singh, D., Holder, B. R., Kapinos, B., Chang, G., Di, L.
The American Society for Pharmacology and Experimental Therapeutics (ASPET)
Published 2018Staff ViewPublication Date: 2018-02-27Publisher: The American Society for Pharmacology and Experimental Therapeutics (ASPET)Print ISSN: 0090-9556Electronic ISSN: 1521-009XTopics: Chemistry and PharmacologyMedicinePublished by: -
14Chang, G.-J., Yeh, Y.-H., Chen, W.-J., Ko, Y.-S., Pang, J.-H. S., Lee, H.-Y.
The American Society for Pharmacology and Experimental Therapeutics
Published 2018Staff ViewPublication Date: 2018-12-11Publisher: The American Society for Pharmacology and Experimental TherapeuticsPrint ISSN: 0022-3565Electronic ISSN: 1521-0103Topics: MedicinePublished by: -
15Hong, W-P. ; Caneau, C. ; Hayes, J. R. ; Bhat, R. ; Chang, G. K. ; Nguyen, C. ; Jeong, Y. H. ; Hadjipanteli, S. ; Illiadis, A. A.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The properties of heterostructures containing an InGaAs/InP heterointerface generated by organometallic chemical vapor deposition regrowth have been investigated. Regrowth of InGaAs on InP was carried out after different sample preparations including wet chemical etching and in situ treatment prior to the regrowth. The electrical properties of the heterointerface were studied by performing deep-level transient spectroscopy measurements. An electron trap was observed in the interface region of the samples either in situ etched with HCl gas or annealed under PH3 overpressure. Temporal pulse response measurements were employed to study the effects of this electron trap on the optical performance of p-i-n photodetectors containing this regrown heterointerface.Type of Medium: Electronic ResourceURL: -
16Rao, Mulpuri V. ; Hong, W-P. ; Chang, G-K. ; Papanicolaou, N. ; Dietrich, Harry B.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The effect of H+ and B+ bombardment on the dark current and the impulse response speed of p-type InGaAs photoconductive detectors was studied. The dark current of the detectors decreased with light ion bombardment before the material turned n-type. The lowest dark current of H+ bombarded detectors was 10 μA at 6 V bias. The impulse response speed improved with H+ bombardment but did not change with B+ bombardment, as long as the material remained p-type. However the decay time of the detector response increased when the material turned n-type. The photoresponsivity in H+ bombarded detectors at 1.3 μm was 1 A/W, the bandwidth was 1.8 GHz, and the dark noise power into a 50 Ω load was −110 dBm with a source-drain bias of 6 V. The test structures had 5 μm contact spacing.Type of Medium: Electronic ResourceURL: -
17Rao, Mulpuri V. ; Hong, W-P. ; Caneau, C. ; Chang, G-K. ; Papanicolaou, N. ; Dietrich, H. B.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Metal-semiconductor-metal (MSM) photodetectors have been fabricated using as-grown and proton-bombarded p-type In0.53Ga0.47As. Proton bombardment caused a decrease in the dark current, an increase in the breakdown voltage, and an improvement in the speed of the MSM detector. The dark current of the MSM detector with 3×1015 cm−3 proton bombardment is 10 nA at 2 V and 300 nA at 5-V bias. The dc responsivity is 0.7 A/W and impulse response full width at half maximum is 160 ps for 1.3 μm radiation at 5 V bias.Type of Medium: Electronic ResourceURL: -
18Hwang, J. S. ; Chang, G. S. ; Hwang, W. C. ; Chen, W. J.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Chang, G. S. ; Hwang, W. C. ; Wang, Y. C. ; Yang, Z. P. ; Hwang, J. S.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Room temperature photoreflectance (PR) was used to investigate the surface state densities of GaAs and In0.52Al0.48As surface intrinsic-n+ structures. The built-in electric field and thus the surface barrier height are evaluated using the observed Franz–Keldysh oscillations in the PR spectra. Based on the thermionic emission theory and current-transport theory, the surface state density as well as the pinning position of the Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Magneto-optical properties of Co–Pt alloy films were investigated at low and room temperatures. We also investigated atomic and electronic structures of these films. The saturated polar Kerr rotation angles of CoPt and CoPt3 alloy films show different temperature dependence. Synchrotron-radiation photoemission spectroscopy was employed to confirm the correlation between the magneto-optical properties and the electronic structures of these films. Changes of a peak at 4.3 eV relevant to the Pt 5d levels hybridized with Co 3d electrons of the CoPt film and of the valence-band shape upon cooling have the same trend as that of the saturated Kerr rotation angle. A structural phase transition of the CoPt film from the tetragonal L10 to orthorhombic phase upon cooling is suggested by the theoretical calculations using linearized-muffin-tin-orbitals methods within the so-called "LDA+U" scheme as well as the experimental observations. X-ray diffraction patterns before and after cooling also support this structural phase transition. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: