Search Results - (Author, Cooperation:F. M. Ross)
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1Latest Papers from Table of Contents or Articles in PressY. C. Chou ; K. Hillerich ; J. Tersoff ; M. C. Reuter ; K. A. Dick ; F. M. Ross
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-01-18Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2015-12-19Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Latest Papers from Table of Contents or Articles in PressD. Jacobsson ; F. Panciera ; J. Tersoff ; M. C. Reuter ; S. Lehmann ; S. Hofmann ; K. A. Dick ; F. M. Ross
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-03-18Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressY. Li ; C. Schwab ; S. L. Ryan ; E. Papaemmanuil ; H. M. Robinson ; P. Jacobs ; A. V. Moorman ; S. Dyer ; J. Borrow ; M. Griffiths ; N. A. Heerema ; A. J. Carroll ; P. Talley ; N. Bown ; N. Telford ; F. M. Ross ; L. Gaunt ; R. J. McNally ; B. D. Young ; P. Sinclair ; V. Rand ; M. R. Teixeira ; O. Joseph ; B. Robinson ; M. Maddison ; N. Dastugue ; P. Vandenberghe ; C. Haferlach ; P. J. Stephens ; J. Cheng ; P. Van Loo ; M. R. Stratton ; P. J. Campbell ; C. J. Harrison
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-03-29Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Chromatids/genetics ; *Chromosome Aberrations ; Chromosome Breakage ; Chromosomes, Human, Pair 15/genetics ; Chromosomes, Human, Pair 21/*genetics ; DNA Copy Number Variations/genetics ; Humans ; Precursor Cell Lymphoblastic Leukemia-Lymphoma/*genetics ; Recombination, Genetic/genetics ; Translocation, Genetic/geneticsPublished by: -
5Articles: DFG German National LicensesXie, Y. H. ; Wilson, W. L. ; Ross, F. M. ; Mucha, J. A. ; Fitzgerald, E. A. ; Macaulay, J. M. ; Harris, T. D.
[S.l.] : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The luminescence properties of 3 μm thick, strongly emitting, and highly porous silicon films were studied using a combination of photoluminescence, transmission electron microscopy, and Fourier transform infrared spectroscopy. Transmission electron micrographs indicate that these samples have structures of predominantly 6–7 nm size clusters (instead of the postulated columns). In the as-prepared films, there is a significant concentration of Si—H bonds which is gradually replaced by Si—O bonds during prolonged aging in air. Upon optical excitation these films exhibit strong visible emission peaking at ≈690 nm. The excitation edge is shown to be emission wavelength dependent, revealing the inhomogeneous nature of both the initially photoexcited and luminescing species. The photoluminescence decay profiles observed are highly nonexponential and decrease with increasing emission energy. The 1/e times observed typically range from 1 to 50 μs. The correlation of the spectral and structural information suggests that the source of the large blue shift of the visible emission compared to the bulk Si band gap energy is likely to be due to quantum confinement in the nanometer size Si clusters. The electron-hole recombination process, on the other hand, remains unclear.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesLoretto, D. ; Ross, F. M. ; Lucas, C. A. ; Wong, G. C. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have used dark-field transmission electron microscopy to investigate 〈5 nm thick CaF2 films grown on Si(111) by molecular-beam epitaxy. Images formed with CaF2 [111¯] reflections exhibit contrast at 1/3[111] height steps at the CaF2 surface and at the CaF2/Si interface over large ((approximately-greater-than)100 μm2), statistically significant areas. Direct evidence for step-flow growth in CaF2 has been obtained. © 1994 American Institue of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesRoss, F. M. ; Hull, R. ; Bahnck, D. ; Bean, J. C. ; Peticolas, L. J. ; King, C. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: By adding electrical connections to a specimen heating holder for a transmission electron microscope (TEM), we have measured the characteristics of electronic devices, such as diodes, while they remain under observation. We have made TEM specimens from metastable GeSi/Si p-n junction diodes and introduced dislocations by heating in situ. We describe the changes in the electrical properties of these devices as dislocations form. We find that a generation-recombination process does not explain our results and instead, suggest a model based on the creation of point defects or the diffusion of metals during the formation of dislocations.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesLoretto, D. ; Ross, F. M. ; Lucas, C. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Quasi-one-dimensional CaF2 islands, 5–10 nm in both width and height and several μm in length, have been grown on Si(001) by molecular beam epitaxy. Using conventional and high resolution transmission electron microscopy we show that the islands grow in two symmetry-equivalent, {011} orientations and are bounded by {111} facets. The unusual island morphology is attributed to a low density of nucleation sites, the small lattice mismatch, and the anisotropic CaF2 surface energy. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesCopel, M. ; Cartier, E. ; Ross, F. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have characterized the structure and electrical properties of lanthanum silicate layers formed on Si(001) by reaction of lanthanum oxide with the substrate. Postoxidation of the deposited films results in the formation of a stacked dielectric with a lanthanum silicate layer atop an interfacial layer of SiO2. This structure combines the interfacial properties of SiO2 with the large permittivity of lanthanum silicate. Although the resulting film has leakage properties far superior to an equivalent thickness of SiO2, there is evidence of significant quantities of ionic charge that must be eliminated before use in electronic applications. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesKodambaka, S. ; Ross, F. M. ; Tromp, R. M. ; Hannon, J. B.
[s.l.] : Nature Publishing Group
Published 2006Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] Interest in nanowires continues to grow, fuelled in part by applications in nanotechnology. The ability to engineer nanowire properties makes them especially promising in nanoelectronics. Most silicon nanowires are grown using the vapour–liquid–solid (VLS) mechanism, in which the nanowire grows ...Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesÖzcan, A. S. ; Jordan-Sweet, J. ; Stach, E. A. ; Tersoff, J. ; Ross, F. M. ; Detavernier, C. ; Lavoie, C.
[s.l.] : Macmillian Magazines Ltd.
Published 2003Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] In the context of materials science, texture describes the statistical distribution of grain orientations. It is an important characteristic of the microstructure of polycrystalline films, determining various electrical, magnetic and mechanical properties. Three types of texture component are ...Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 0142-2421Keywords: Chemistry ; Polymer and Materials ScienceSource: Wiley InterScience Backfile Collection 1832-2000Topics: PhysicsNotes: We describe the method of Fresnel fringe contrast analysis and discuss the results obtained by applying the technique to the analysis of the oxides first formed on silicon during wet oxidation. The accuracy of the method is limited at present by the effects which inelastic scattering has on the microscope images. Although these effects are hard to quantify, we show that accurate results can be obtained concerning the sharpness or diffuseness of the Si/SiO2 interface at the atomic level. Combining the results obtained by this method with those found by using high-resolution electron microscopy for oxides of different thicknesses we are able to conclude that there is a SiOx layer of probably 0.25 nm present during the first stages of oxide growth, but that a further 0.5 nm of crystalline oxide develops well after the start of the oxidation, when the oxide layer is between 2 and 4 nm thick. The implication of these results in relation to the various mechanisms for silicon oxidation which have been proposed are discussed briefly.Additional Material: 6 Ill.Type of Medium: Electronic ResourceURL: