Search Results - (Author, Cooperation:F. Intonti)

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  1. 1
    W. Bao ; M. Melli ; N. Caselli ; F. Riboli ; D. S. Wiersma ; M. Staffaroni ; H. Choo ; D. F. Ogletree ; S. Aloni ; J. Bokor ; S. Cabrini ; F. Intonti ; M. B. Salmeron ; E. Yablonovitch ; P. J. Schuck ; A. Weber-Bargioni
    American Association for the Advancement of Science (AAAS)
    Published 2012
    Staff View
    Publication Date:
    2012-12-12
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Patanè, A. ; Grassi Alessi, M. ; Intonti, F. ; Polimeni, A. ; Capizzi, M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We present a detailed study, both structural and optical, of GaAs/InAs/GaAs heterostructures for InAs nominal coverages (L) ranging from 0.6 to 3 ML. Planar transmission electron microscopy (TEM) provides direct evidence of the presence of InAs quantum dots (QDs) for all values of L, with an increase in their density at high values of L. Transverse TEM shows also that those QDs have mostly small base angles. Accordingly, the evolution of the optical properties of InAs/GaAs is investigated by photoluminescence (PL) and PL excitation measurements (PLE). A broad PL band is observed in all samples, which is ascribed to the recombination of heavy-hole excitons in the InAs quantum dots, observed with TEM. For thin coverages (L≤1.6ML), a narrow PL band is also observed, which is attributed to recombination of heavy-hole excitons in a two-dimensional (2D) InAs layer. The two bands shift to lower energy for increasing L. For L≥1.6 ML, the QD band has a faster shift and exhibits a complex structure, while the exciton recombination in the 2D-InAs layer vanishes. Those features, as well as the PLE results, indicate that: (a) quantum dots are connected by a two-dimensional InAs layer, at least for thin InAs coverages, which allows an efficient carrier capture into the dots; (b) the dot size increases with L, the increase being faster for L≥1.6 ML because above this thickness the growth becomes completely three dimensional. A simple model explains the PL data and results in a dot geometry in agreement with the TEM measurements. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.367383

    Articles: DFG German National Licenses
  3. 3
    Guenther, T. ; Emiliani, V. ; Intonti, F. ; Lienau, C. ; Elsaesser, T.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Quasi-two-color femtosecond pump and probe spectroscopy and near-field scanning optical microscopy are combined to study the carrier dynamics in single semiconductor nanostructures. In temporally, spectrally, and spatially resolved measurements with a time resolution of 200 fs and a spatial resolution of 200 nm, the nonlinear change in reflectivity of a single quantum wire is mapped in real space and time. The experiments show that carrier relaxation in a single quantum wire occurs on a 100 fs time scale at room temperature. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.125368

    Articles: DFG German National Licenses