Search Results - (Author, Cooperation:F. Fang)
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1Articles: DFG German National LicensesStaff View
ISSN: 0167-2584Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
2Latest Papers from Table of Contents or Articles in PressT H Zhang, Y Wang, X F Fang, P Liang, Y Zhao, Y H Li and X M Liu
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-02-20Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
3Latest Papers from Table of Contents or Articles in PressYou, L., Zheng, F., Fang, L., Zhou, Y., Tan, L. Z., Zhang, Z., Ma, G., Schmidt, D., Rusydi, A., Wang, L., Chang, L., Rappe, A. M., Wang, J.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-07-07Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
4Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-02-03Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressS. Turcan ; D. Rohle ; A. Goenka ; L. A. Walsh ; F. Fang ; E. Yilmaz ; C. Campos ; A. W. Fabius ; C. Lu ; P. S. Ward ; C. B. Thompson ; A. Kaufman ; O. Guryanova ; R. Levine ; A. Heguy ; A. Viale ; L. G. Morris ; J. T. Huse ; I. K. Mellinghoff ; T. A. Chan
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-02-22Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Astrocytes/cytology/metabolism ; Cell Survival/genetics ; Cells, Cultured ; CpG Islands/genetics ; DNA Methylation/*genetics ; Epigenesis, Genetic ; Epigenomics ; Gene Expression Regulation ; Glioblastoma/genetics/pathology ; Glioma/*genetics/pathology ; HEK293 Cells ; Histones/metabolism ; Humans ; Isocitrate Dehydrogenase/*genetics/metabolism ; Metabolome/genetics ; Mutation/*genetics ; *Phenotype ; Tumor Cells, CulturedPublished by: -
6Latest Papers from Table of Contents or Articles in PressC. H. P. Wen, H. C. Xu, Q. Yao, R. Peng, X. H. Niu, Q. Y. Chen, Z. T. Liu, D. W. Shen, Q. Song, X. Lou, Y. F. Fang, X. S. Liu, Y. H. Song, Y. J. Jiao, T. F. Duan, H. H. Wen, P. Dudin, G. Kotliar, Z. P. Yin, and D. L. Feng
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-09-14Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Condensed Matter: Electronic Properties, etc.Published by: -
7Latest Papers from Table of Contents or Articles in PressEroglu, Z., Chen, Y. A., Gibney, G. T., Weber, J. S., Kudchadkar, R. R., Khushalani, N. I., Markowitz, J., Brohl, A. S., Tetteh, L. F., Ramadan, H., Arnone, G., Li, J., Zhao, X., Sharma, R., Darville, L. N. F., Fang, B., Smalley, I., Messina, J. L., Koomen, J. M., Sondak, V. K., Smalley, K. S. M.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-11-16Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
8Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-03-06Publisher: Oxford University PressPrint ISSN: 0964-6906Electronic ISSN: 1460-2083Topics: BiologyMedicinePublished by: -
9Latest Papers from Table of Contents or Articles in PressGuo, W.-l., Zhan, Y., Fang, F., Huang, S.-g., Deng, Y.-b., Zhao, J.-g., Wang, J.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-05-27Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, PaediatricsPublished by: -
10Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-06-07Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: analytical chemistryPublished by: -
11Latest Papers from Table of Contents or Articles in PressZhang, P., Guo, J.-S., Yan, P., Chen, Y.-P., Wang, W., Dai, Y.-Z., Fang, F., Wang, G.-X., Shen, Y.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-04-17Publisher: The American Society for Microbiology (ASM)Print ISSN: 0099-2240Electronic ISSN: 1098-5336Topics: BiologyPublished by: -
12Latest Papers from Table of Contents or Articles in PressPulliam, N., Fang, F., Ozes, A. R., Tang, J., Adewuyi, A., Keer, H., Lyons, J., Baylin, S. B., Matei, D., Nakshatri, H., Rassool, F. V., Miller, K. D., Nephew, K. P.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-07-03Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
13Latest Papers from Table of Contents or Articles in PressHan, Z., Xiao, Y., Wang, K., Yan, J., Xiao, Z., Fang, F., Jin, Z., Liu, Y., Sun, X., Shen, B.
The Society of Nuclear Medicine (SNM)
Published 2018Staff ViewPublication Date: 2018-11-02Publisher: The Society of Nuclear Medicine (SNM)Print ISSN: 0022-3123Topics: MedicinePublished by: -
14Latest Papers from Table of Contents or Articles in PressSiah, K. T. H., Gong, X., Yang, X. J., Whitehead, W. E., Chen, M., Hou, X., Pratap, N., Ghoshal, U. C., Syam, A. F., Abdullah, M., Choi, M.-G., Bak, Y.-T., Lu, C.-L., Gonlachanvit, S., Boon, C. S., Fang, F., Cheong, P. K., Wu, J. C. Y., Gwee, K.-A.
BMJ Publishing Group
Published 2018Staff ViewPublication Date: 2018-05-09Publisher: BMJ Publishing GroupPrint ISSN: 0017-5749Electronic ISSN: 1468-3288Topics: MedicineKeywords: GutPublished by: -
15Articles: DFG German National LicensesMawst, L. J. ; Bhattacharya, A. ; Lopez, J. ; Botez, D. ; Garbuzov, D. Z. ; DeMarco, L. ; Nabiev, R. F. ; Jansen, M. ; Fang, F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesWang, P. J. ; Meyerson, B. S. ; Fang, F. F. ; Nocera, J. ; Parker, B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High quality Si/Si1−xGex/Si p-type modulation-doped double heterostructures with x=0.12 and 0.15 have been grown by the ultrahigh vacuum/chemical vapor deposition technique. Hole mobilities as high as ∼3700 cm2/V s at 14 K have been obtained for heterostructures with x=0.12, at a sheet carrier concentration of ∼8×1011 cm−2. This is the highest hole mobility ever reported for p-type Si material at these carrier concentrations. The electrical properties of these heterostructures at low temperatures are those expected of a two-dimensional hole gas at Si/SiGe and SiGe/Si heterointerfaces. The high hole mobility is indicative of excellent interfacial properties. Peak mobilities were observed to depend on the level and proximity of remote B dopant species, as well as the Ge content of the alloyed layers.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesWang, P. J. ; Fang, F. F. ; Meyerson, B. S. ; Nocera, J. ; Parker, B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Si/Si0.85Ge0.15/Si p-type modulation-doped double heterostructures have been grown by the ultrahigh vacuum/chemical vapor deposition technique, and mobility enhancement has been observed at low temperatures. For heterostructures with Si layers doped with boron to ∼1×1019 cm−3, hole mobilities of ∼900 cm2/V s at 14 K have been obtained. No carrier freeze-out behavior has been observed at low temperatures. The existence of two-dimensional hole gas was determined by the tilted-field Shubnikov–de Haas measurement. Both Si/SiGe and SiGe/Si heterointerfaces were found to be equivalent and of excellent interfacial quality. The valence-band maximum of Si0.85Ge0.15 alloy has been estimated to be (approximately-equal-to)0.95 meV higher than that of Si. A hole effective mass of 0.44±0.03m0, which is consistent with the interpolation of the bulk band structures for the Si0.85Ge0.15 alloy, has been obtained for the heterostructure.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesNelson, S. F. ; Ismail, K. ; Nocera, J. J. ; Fang, F. F. ; Mendez, E. E. ; Chu, J. O. ; Meyerson, B. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesMawst, L. J. ; Bhattacharya, A. ; Lopez, J. ; Botez, D. ; Garbuzov, D. Z. ; DeMarco, L. ; Connolly, J. C. ; Jansen, M. ; Fang, F. ; Nabiev, R. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Al-free 980 nm InGaAs/InGaAsP/InGaP laser structures grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) have been optimized for high cw output power by incorporating a broad waveguide design. Increasing the optical-confinement layer total thickness from 0.2 to 1.0 μm decreases the internal loss fivefold to 1.0–1.5 cm−1, and doubles the transverse spot size to 0.6 μm (full width half-maximum). Consequently, 4-mm long, 100-μm-aperture devices emit up to 8.1 W front-facet cw power. cw power conversion efficiencies as high as 59% are obtained from 0.5-mm long devices. Catastrophic-optical-mirror-damage (COMD) power-density levels reach 15.0–15.5 MW/cm2, and are found similar to those for InGaAs/AlGaAs facet-coated diode lasers. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 1551-2916Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsNotes: Electrically induced fatigue crack growth is an important degradation mechanism for ferroelectric devices. Reliability concerns for ferroelectric devices place stringent demands for ferroelectric materials. In situ observation of electrically induced fatigue crack growth was carried out for ferroelectric single crystals under alternating electric field. Electrically induced fatigue crack growth was observed both below and above the coercive field. Crack closure and open behavior were observed together with 90° ferroelectric domain switching during the electric cycling. The crack propagation behavior is a repeated process of continuous but small increments followed by a sudden increase in the crack length. It was suggested that the electric boundary condition along the crack face, from its mouth to its tip, is a variation from the impermeable to the permeable state. The gradual attainment of an impermeable crack tip after an incubation period of field cycling causes the observed jump in crack propagation.Type of Medium: Electronic ResourceURL: