Search Results - (Author, Cooperation:E. Tutuc)

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  1. 1
    K. Lee ; B. Fallahazad ; J. Xue ; D. C. Dillen ; K. Kim ; T. Taniguchi ; K. Watanabe ; E. Tutuc
    American Association for the Advancement of Science (AAAS)
    Published 2014
    Staff View
    Publication Date:
    2014-07-06
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Y. Hao ; M. S. Bharathi ; L. Wang ; Y. Liu ; H. Chen ; S. Nie ; X. Wang ; H. Chou ; C. Tan ; B. Fallahazad ; H. Ramanarayan ; C. W. Magnuson ; E. Tutuc ; B. I. Yakobson ; K. F. McCarty ; Y. W. Zhang ; P. Kim ; J. Hone ; L. Colombo ; R. S. Ruoff
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-10-26
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    De Poortere, E. P. ; Shkolnikov, Y. P. ; Tutuc, E. ; Papadakis, S. J. ; Shayegan, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report improvements in the quality of two-dimensional (2D) electrons in modulation-doped AlAs quantum wells, leading to electron mobilities as high as 31 m2/Vs, a ten-fold increase over the mobility of previous AlAs samples. Confirming the quality of our quantum wells, developing fractional quantum Hall states are observed in the first Landau level at high order filling factors ν=2/5, 3/5, 3/7, 4/7, and 4/9, and at larger fillings, at ν=4/3, 5/3, 7/3, 8/3, 8/5, and 11/3. Thanks to the much larger effective mass and g factor of AlAs 2D electrons compared to GaAs, and to the possible multivalley occupancy of AlAs 2D electrons, our improved systems help bring a wider scope to the investigation of low-disorder, interacting 2D electrons. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1456265

    Articles: DFG German National Licenses