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1Latest Papers from Table of Contents or Articles in PressKim, I.-K., Kim, K., Lee, E., Oh, D. S., Park, C. S., Park, S., Yang, J. M., Kim, J.-H., Kim, H.-S., Shima, D. T., Kim, J. H., Hong, S. H., Cho, Y. H., Kim, Y. H., Park, J. B., Koh, G. Y., Ju, Y. S., Lee, H. K., Lee, S., Kim, I.
Rockefeller University Press
Published 2018Staff ViewPublication Date: 2018-03-06Publisher: Rockefeller University PressPrint ISSN: 0022-1007Electronic ISSN: 1540-9538Topics: MedicineKeywords: Solid TumorsPublished by: -
2Latest Papers from Table of Contents or Articles in PressJung, W.-H., Son, Y.-E., Oh, S.-H., Fu, C., Kim, H. S., Kwak, J.-H., Cardenas, M. E., Heitman, J., Park, H.-S.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-02-09Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressSong, Y.-K., Park, J. E., Oh, Y., Hyung, S., Jeong, Y.-S., Kim, M.-S., Lee, W., Chung, S.-J.
The American Society for Pharmacology and Experimental Therapeutics
Published 2018Staff ViewPublication Date: 2018-12-13Publisher: The American Society for Pharmacology and Experimental TherapeuticsPrint ISSN: 0022-3565Electronic ISSN: 1521-0103Topics: MedicinePublished by: -
4Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2012-03-30Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Bacillus subtilis/*genetics ; Base Sequence ; Codon/*genetics/metabolism ; Escherichia coli/*genetics ; Genome, Bacterial/genetics ; Models, Genetic ; Peptide Chain Termination, Translational/genetics ; Protein Biosynthesis/*genetics ; RNA, Bacterial/genetics/metabolism ; RNA, Ribosomal, 16S/genetics/metabolism ; Ribosomes/*metabolismPublished by: -
5Latest Papers from Table of Contents or Articles in PressWong, D. F., Comley, R. A., Kuwabara, H., Rosenberg, P. B., Resnick, S. M., Ostrowitzki, S., Vozzi, C., Boess, F., Oh, E., Lyketsos, C. G., Honer, M., Gobbi, L., Klein, G., George, N., Gapasin, L., Kitzmiller, K., Roberts, J., Sevigny, J., Nandi, A., Brasic, J., Mishra, C., Thambisetty, M., Mogekar, A., Mathur, A., Albert, M., Dannals, R. F., Borroni, E.
The Society of Nuclear Medicine (SNM)
Published 2018Staff ViewPublication Date: 2018-12-04Publisher: The Society of Nuclear Medicine (SNM)Print ISSN: 0022-3123Topics: MedicinePublished by: -
6Articles: DFG German National LicensesOh, E. G. ; Hanna, M. C. ; Lu, Z. H. ; Szmyd, D. M. ; Majerfeld, A.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A study of the electrical and optical properties of the Se deep donor states in AlxGa1−xAs:Se grown by metalorganic vapor phase epitaxy (MOVPE) process is reported. A novel experimental technique is presented to determine the absolute energy and the true density of the deep donor. The characteristics of the Se deep donor states are obtained from deep level transient spectroscopy, photoluminescence, photocapacitance, Hall effect measurements, isothermal capacitance transient measurements, and a quasistatic capacitance voltage technique. It is found that the Se dopant gives rise to at least two energy levels in the band gap. One is the generally observed deep donor level, commonly called the DX level and the other is a new shallower donor state which also exhibits DX-like properties. The concentration of the shallower state is less than 5% of the deep donor density. The densities of both donors increase with the mole fraction of H2Se used during MOVPE growth. Thermal emission activation energies of 0.29±0.01 and 0.24±0.01 eV were found for the deep and shallower donor states, respectively, for 0.23≤x≤0.41. The Se donor ionization energies relative to the Γ minimum are determined for samples with different AlAs mole fractions, and also, the true densities of Se donors are obtained. We propose a macroscopic model for the emission and capture mechanisms of Se donors in AlxGa1−xAs, which allows a consistent interpretation of the results obtained by different measurement techniques and provides a natural explanation for the low temperature Hall density saturation phenomenon and the persistent photoconductivity effect.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesLu, Z. H. ; Hanna, M. C. ; Szmyd, D. M. ; Oh, E. G. ; Majerfeld, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report a new analysis technique to determine the acceptor density NA and the donor density ND in high-purity GaAs from 10 K photoluminescence (PL) measurements. For both n-type and p-type samples, we find that NA/ND is related to the excitonic intensity ratio rx=I(A0,X)/I(D0,X) by NA/ND=0.89rx−0.06. In addition, NA can be determined from NA=1014IA, where IA is the emission intensity of the donor-acceptor pair transition normalized to the intensity of the unresolved exciton peak. Therefore, for n-type and p-type material with an impurity density 1013–1016 cm−3, NA and ND can be determined solely from a 10 K PL measurement. The advantage of this technique lies in its nondestructive nature and its applicability to situations where Hall measurements are not possible or suitable.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesSwitching of negative and positive dielectro-anisotropic liquid crystals by in-plane electric fieldsOh-e, Masahito ; Yoneya, Makoto ; Kondo, Katsumi
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: This article compares switching behaviors between negative (Nn) and positive (Np) dielectro-anisotropic nematic liquid crystals driven by an in-plane electric field which is generated with interdigital electrodes. Even for Np type liquid crystals, excellent viewing angle characteristics were obtained as expected. Theoretical descriptions of the switching principle, i.e., threshold behavior and response mechanism, could be applied to both the Nn and Np type liquid crystals. However, the orientational deformation of the Np type liquid crystals caused by a distorted electric field which occurred near the edges of electrodes was not the same as that of the Nn type liquid crystals. The switching of the Np type liquid crystals near the edges of the electrodes by this field was followed by the in-plane switching of the liquid crystals between the electrodes. This remarkably distinctive dynamical behavior implied a difference in the response of the longitudinal axes for Nn and Np type liquid crystal molecules. The longitudinal axes of the latter seemed to be sensitive to the electric field component perpendicular to the substrates when applying the in-plane electric field. Furthermore, these experimentally obtained results were supported by computer simulations which analyzed the liquid crystal director distribution and transmittance pattern from edge-to-edge of a pair of electrodes when applying the in-plane electric field. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesHanna, M. C. ; Lu, Z. H. ; Oh, E. G. ; Mao, E. ; Majerfeld, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Epitaxial layers of GaAs with peak mobilities as high as 200 000 cm2/V s at 50 K have been grown in an atmospheric pressure organometallic vapor phase epitaxy reactor using trimethylgallium (TMG) and arsine. The growth conditions which lead to high-mobility GaAs are described in this letter. Low-temperature photoluminescence and temperature-dependent Hall measurements are used to study the dependence of the incorporation of residual impurities on the growth temperature and arsine partial pressure. Carbon acceptor densities 〈1014 cm−3 were measured in the highest purity samples.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A response mechanism of nematic liquid crystals following the switching-on and off of an in-plane electric field when using the in-plane switching (IPS) mode was investigated. Simplified theoretical expressions, which were derived with an assumption that an in-plane electric field was applied to the liquid crystals, were used to explain the dynamical switching process in the IPS mode. In particular, the relaxation time of the liquid crystals when removing the electric field was described as a proportional relationship to the square of the cell gap. A thinner cell gap also proved to be effective in obtaining a fast response time in the IPS mode. By contrast, the switching-on time when applying the in-plane electric field proved to be inversely proportional to the difference between the square of the electric field strength and the square of the critical electric field strength at which the liquid crystals begin to deform. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Electro-optical characteristics related to the threshold behavior of liquid crystals when using the in-plane switching (IPS) mode were investigated with interdigital electrodes. In order to analyze the switching behavior of liquid crystals, an equation, which expresses the threshold transition, was derived using the continuum elastic theory. It was made clear that it was the electric field and not the voltage that drives the liquid crystals in the IPS mode. Significantly, an inversely proportional relationship between the threshold voltage and the gap between the substrates was found to hold. Furthermore, the electro-optical characteristics were recognized to change with the variation of the gap between the substrates. This behavior is due to the independence of electric field on liquid crystal layer normal. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesSohn, J. Y. ; Ahn, Y. H. ; Park, D. J. ; Oh, E. ; Kim, D. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Femtosecond pulse shaping and photomixing methods are combined to make a tunable terahertz source. Grating-pair pulse shaper selects two main frequency components to produce pulses that are modulated with a period which is inversely proportional to the frequency separation. The shaped pulse is then photomixed in semi-insulating GaAs under external bias. Terahertz (THz) emission frequency follows the modulation frequency of the excitation pulses, from 0.5 to 3 THz. Contrary to cw photomixing, this method can easily be combined with electro-optic and photoconductive sampling detection methods. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesOh-e, Masahito ; Hong, Seok-Cheol ; Shen, Y. R.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Surface–specific sum–frequency vibrational spectroscopy and second-harmonic generation have been used to study the structure of a rubbed polystyrene (PS) surface and the orientation of 4′-n-pentyl-4-cyanobiphenyl (5CB) liquid crystal molecules on it. The results show that the phenyl sidegroups are well aligned by rubbing in the direction perpendicular to rubbing but tilt from the surface normal with a broad distribution. Although the PS surface is nonpolar, the 5CB molecules appear to adsorb on PS preferentially with the terminal cyano group facing the PS surface. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesJho, Y. D. ; Yahng, J. S. ; Oh, E. ; Kim, D. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have measured both spectrum- and time-resolved photoluminescence (PL) of InGaN/GaN light-emitting diode structure as a function of an external bias. From spectrum-resolved PL, we observed regions of blueshift and redshift in peak PL energies. From the bias point at which redshift begins, which we attribute to the inversion of electric field due to full compensation of the piezoelectric field (PEF), we estimate PEF to be 2.1±0.2 MV/cm. From time-resolved PL, we found the carrier lifetimes to drastically decrease (2.5 ns–2 ps) with increasing reverse bias. We attribute this decrease to escape tunneling through tilted barriers. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesOh-e, Masahito ; Lvovsky, Alexander I. ; Wei, Xing ; Shen, Y. R.
College Park, Md. : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: Sum-frequency generation (SFG) vibrational spectroscopy was used to study how side alkyl chains of a polyimide are oriented at the air–polymer interface and how they are affected by mechanical rubbing and adsorption of a liquid crystal monolayer. The spectra of polyimides with various alkyl chain lengths all indicate that the chains protrude out of the polyimide surface with a very broad distribution. Longer alkyl chains appear to contain more gauche defects. While the polyimide backbones are aligned by rubbing, the side chain orientation is hardly affected. Adsorption of a liquid crystal monolayer on the surface significantly reduces the gauche defects in the alkyl chains. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: A cryogenic stage preamplifier for the TopHat experiment is built with InterFet NJ132L junction field effect transistors. We describe the testing procedure, screening, and fabrication of the six-channel preamplifier. It is attached to the LN2 shield and self-heats to 110 K with 20 mW total dissipation. The noise performance with grounded input is 7 nV root-mean-square (rms)/Hz at 1.5 Hz and 1 nV rms/Hz at 50 Hz. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesOh-e, Masahito ; Kim, Doseok ; Shen, Y. R.
College Park, Md. : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: Sum-frequency vibrational spectroscopy was used to study how linearly polarized UV irradiation could cause bond breaking and alter the surface structure of a polyimide. The spectroscopic results allowed the determination of an approximate orientational distribution of the polymer backbones at a rubbed surface. They also permitted deduction of rates of bond breaking of the backbones at the surface by UV dosage. The surface anisotropy resulting from bond breaking by linearly polarized UV irradiation was found to be relatively small, suggesting a weak azimuthal anchoring energy for liquid crystal films deposited on such a surface. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 0014-5793Keywords: Nitric oxide (NO) AP-1 ; Redox regulation ; S-nitrosylation ; Sodium nitroprusside (SNP) ; Transcriptional factorSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesSamarth, N. ; Luo, H. ; Buschert, J. ; Furdyna, J.K. ; Walecki, W.J. ; Nurmikko, A.V. ; Alonso, R.G. ; Oh, E.-S. ; Ramdas, A.K. ; Otsuka, N.
Amsterdam : ElsevierStaff ViewISSN: 0022-0248Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyGeosciencesPhysicsType of Medium: Electronic ResourceURL: