Search Results - (Author, Cooperation:E. Mathe)
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1Latest Papers from Table of Contents or Articles in PressO. Hakim ; W. Resch ; A. Yamane ; I. Klein ; K. R. Kieffer-Kwon ; M. Jankovic ; T. Oliveira ; A. Bothmer ; T. C. Voss ; C. Ansarah-Sobrinho ; E. Mathe ; G. Liang ; J. Cobell ; H. Nakahashi ; D. F. Robbiani ; A. Nussenzweig ; G. L. Hager ; M. C. Nussenzweig ; R. Casellas
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-02-09Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; B-Lymphocytes/cytology/*metabolism/*pathology ; Cell Nucleus/genetics/metabolism ; Cells, Cultured ; Chromosome Positioning ; Chromosomes, Mammalian/genetics/metabolism ; Cytidine Deaminase/deficiency/genetics/metabolism ; DNA Breaks, Double-Stranded ; DNA Damage/*genetics ; Genes, myc/genetics ; Genome/genetics ; Immunoglobulin Heavy Chains/genetics ; Mice ; Replication Protein A/metabolism ; Translocation, Genetic/*geneticsPublished by: -
2Articles: DFG German National LicensesFogarassy, E. ; Prevot, B. ; Unamuno, S. ; Elliq, M. ; Pattyn, H. ; Mathe, E. L. ; Naudon, A.
Springer
Published 1993Staff ViewISSN: 1432-0630Keywords: 61.80.Ba ; 81.10.Fq ; 85.30.DeSource: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsNotes: Abstract The possibility to fabricate high-mobility polysilicon TFTs by nanosecond pulsed laser crystallization of unhydrogenated amorphous Si thin films has been investigated. Two types of lasers have been used: a large area (≈ 1 cm2) single ArF excimer laser pulse and a small diameter (≈ 100 μm) frequency-doubled Nd:YAG laser beam, working in the scanning regime. Processed films have been characterized in detail by different optical and microscopic techniques. Device performances indicate that the best results are achieved with the excimer laser leading to high mobility values (up to 140 cm2/Vs) which are much larger than in polysilicon TFTs fabricated onto the same quartz substrates by low-temperature thermal (630° C) crystallization of amorphous Si films (μfe≈55 cm2/Vs).Type of Medium: Electronic ResourceURL: