Search Results - (Author, Cooperation:E. H. Chen)
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1Latest Papers from Table of Contents or Articles in PressK. Shilagardi ; S. Li ; F. Luo ; F. Marikar ; R. Duan ; P. Jin ; J. H. Kim ; K. Murnen ; E. H. Chen
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-03-09Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Actins/*metabolism ; Animals ; Caenorhabditis elegans Proteins/genetics/*metabolism ; Cell Adhesion Molecules/genetics/*metabolism ; *Cell Communication ; Cell Culture Techniques ; *Cell Fusion ; Cell Line ; Cell Surface Extensions/metabolism/physiology ; Drosophila Proteins/genetics/metabolism ; Drosophila melanogaster/cytology ; Immunoglobulins/genetics/metabolism ; Membrane Glycoproteins/genetics/*metabolism ; Membrane Proteins/genetics/metabolism ; Muscle Proteins/genetics/metabolismPublished by: -
2Articles: DFG German National LicensesChen, E. H. ; Chin, T. P. ; Woodall, J. M. ; Lundstrom, M. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The electrical properties of lattice mismatched InAs/GaP heterojunctions are examined. In spite of a high dislocation density at the heterointerface, the current versus voltage characteristics show nearly ideal behavior with low reverse leakage currents and high breakdown voltages. The forward current varied exponentially with bias displaying ideal factors of 1.10 or less. Band offsets estimated from current–voltage and capacitance–voltage analysis are consistent with previous estimates based on differences in Schottky barrier heights. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesChen, E. H. ; McInturff, D. T. ; Chin, T. P. ; Melloch, M. R. ; Woodall, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We demonstrate annealed low-temperature grown (LTG) GaAs to be a highly effective etch-stop layer while photoetching n-type normal-growth-temperature GaAs. During this process, the etch rate is controlled by the transport of photogenerated carriers to the semiconductor/electrolyte interface. Because of the very short minority carrier lifetime in LTG-GaAs, only a very small portion of photogenerated carriers can reach the semiconductor surface to complete the electrolytic decomposition reaction. Therefore, the etch rate of LTG-GaAs is reduced considerably. In our studies, the etch rate selectivity can be as high as 800. Furthermore, we demonstrate that doping concentration, presence of an ohmic contact, photon energy, and pH value of the etching solution can be used to control the etch rate of n-GaAs during the photoetching process. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesTsukamoto, H. ; Chen, E.-H. ; Woodall, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during growth, the threading dislocation intersection density decreases as the inverse of the distance x from the InAs/GaP interface, D(x)=D0x0/(x0+x), where D0 and x0 are dislocation density at the InAs/GaP interface and the first annihilation position from the interface, respectively. The carrier profile in InAs films can be described by a similar equation that is deduced from the threading dislocation intersection profile. The calculated carrier profiles agree well with measured carrier profiles. This correlation supports our hypothesis that both the edge dislocation intersections and the threading dislocation intersections act as shallow donor sources. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesStaff View
ISSN: 0022-0248Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyGeosciencesPhysicsType of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesStaff View
ISSN: 1432-0800Source: Springer Online Journal Archives 1860-2000Topics: Energy, Environment Protection, Nuclear Power EngineeringMedicineNotes: Abstract Detailed examinations of water samples were carried out to determine the precision of analysis for chrysotile asbestos by transmission electron microscopy (TEM). Since the frequency distribution of counts fits a Poisson distribution, several statistical inferences were made, including (1) an estimate of precision, and (2) a model for determining the probability of observing chrysotile as a function of its concentration in water and magnitude of area scanned by TEM.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesStaff View
ISSN: 0021-9304Keywords: Chemistry ; Polymer and Materials ScienceSource: Wiley InterScience Backfile Collection 1832-2000Topics: MedicineTechnologyNotes: Repair or replacement of the damaged anterior cruciate ligament (ACL) is a significant clinical problem. A design utilizing ultrahigh-molecular-weight polyethylene (UHMWPE) was developed and marketed by an orthopaedic device manufacturer. Mechanical failure rates of greater than 10%/year postoperatively raised the issue of the adequacy of UHMWPE in that design. A study has been made to estimate the forces in the human anterior cruciate ligament for young, middle age, and older patients and to thus derive the minimum materials requirements for a now withdrawn prosthetic anterior cruciate ligament (PACL) design. It is concluded that UHMWPE does not possess adequate yield, creep, or fatigue properties to meet the design. Furthermore, consideration of the varying requirements on the PACL, due to differences in age and activity levels of patients, suggest that a band-type design offers a better possibility of achieving adequate materials performance in the ACL prosthetic replacement.Additional Material: 3 Ill.Type of Medium: Electronic ResourceURL: