Search Results - (Author, Cooperation:D. Hofmann)

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  1. 1
    Staff View
    Publication Date:
    2018-03-30
    Publisher:
    American Society of Hematology (ASH)
    Print ISSN:
    0006-4971
    Electronic ISSN:
    1528-0020
    Topics:
    Biology
    Medicine
    Keywords:
    Transplantation, Lymphoid Neoplasia
    Published by:
    http://www.hematology.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    M. Roffet-Salque ; M. Regert ; R. P. Evershed ; A. K. Outram ; L. J. Cramp ; O. Decavallas ; J. Dunne ; P. Gerbault ; S. Mileto ; S. Mirabaud ; M. Paakkonen ; J. Smyth ; L. Soberl ; H. L. Whelton ; A. Alday-Ruiz ; H. Asplund ; M. Bartkowiak ; E. Bayer-Niemeier ; L. Belhouchet ; F. Bernardini ; M. Budja ; G. Cooney ; M. Cubas ; E. M. Danaher ; M. Diniz ; L. Domboroczki ; C. Fabbri ; J. E. Gonzalez-Urquijo ; J. Guilaine ; S. Hachi ; B. N. Hartwell ; D. Hofmann ; I. Hohle ; J. J. Ibanez ; N. Karul ; F. Kherbouche ; J. Kiely ; K. Kotsakis ; F. Lueth ; J. P. Mallory ; C. Manen ; A. Marciniak ; B. Maurice-Chabard ; M. A. Mc Gonigle ; S. Mulazzani ; M. Ozdogan ; O. S. Peric ; S. R. Peric ; J. Petrasch ; A. M. Petrequin ; P. Petrequin ; U. Poensgen ; C. J. Pollard ; F. Poplin ; G. Radi ; P. Stadler ; H. Stauble ; N. Tasic ; D. Urem-Kotsou ; J. B. Vukovic ; F. Walsh ; A. Whittle ; S. Wolfram ; L. Zapata-Pena ; J. Zoughlami
    Nature Publishing Group (NPG)
    Published 2015
    Staff View
    Publication Date:
    2015-11-13
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Africa, Northern ; Animals ; Archaeology ; Beekeeping/*history ; *Bees ; Ceramics/chemistry/history ; Europe ; Farmers/history ; Geographic Mapping ; History, Ancient ; Lipids/analysis/chemistry ; Middle East ; Spatio-Temporal Analysis ; Waxes/*analysis/chemistry/*history
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2012-08-14
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Amino Acid Motifs ; Autoantigens/immunology/metabolism ; Calcium Signaling ; Complementarity Determining Regions/immunology/metabolism ; Epitopes, B-Lymphocyte/immunology/metabolism ; Humans ; Leukemia, Lymphocytic, Chronic, B-Cell/immunology/*metabolism/*pathology ; Receptors, Antigen, B-Cell/immunology/*metabolism ; *Signal Transduction
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Hofmann, D. [Verfasser]

    Published 1985
    Staff View
    Type of Medium:
    article
    Publication Date:
    1985
    Keywords:
    Pädagogik ; Schulpädagogik ; Gymnasium ; Lernen ; Lernprozess ; Handlungsorientierung ; Unterrichtsmaterial ; Biologie ; Schulgarten ; Werkunterricht ; Erfahrungsbericht ; Tätigkeit ; Bayern ; Bayreuth
    In:
    Die Höhere Schule, (1985) H. 1, S. 12-15, 0018-3083
    Language:
    German

    FIS Bildung Literaturdatenbank
  5. 5
    Brox, R., Milanos, L., Saleh, N., Baumeister, P., Buschauer, A., Hofmann, D., Heinrich, M. R., Clark, T., Tschammer, N.
    The American Society for Pharmacology and Experimental Therapeutics (ASPET)
    Published 2018
    Staff View
    Publication Date:
    2018-03-06
    Publisher:
    The American Society for Pharmacology and Experimental Therapeutics (ASPET)
    Print ISSN:
    0026-895X
    Electronic ISSN:
    1521-0111
    Topics:
    Chemistry and Pharmacology
    Medicine
    Published by:
    http://www.aspet.org/

    Latest Papers from Table of Contents or Articles in Press
  6. 6
    Hofmann, D. M. ; Meyer, B. K. ; Spaeth, J.-M. ; Wattenbach, M. ; Krüger, J ; Kisielowski-Kemmerich, C. ; Alexander, H.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report on optical absorption its magnetic circular dichroism (MCD), optically detected electron spin-resonance (ODESR), and electron nuclear double-resonance (ODENDOR) investigations of plastically deformed semi-insulating GaAs. By plastic deformation arsenic antisite defects are created which show a similar ODESR pattern as EL2 defects present in the material prior to deformation. EL2 and the new antisite defects can be distinguished by their different spectral dependence of the MCD. The new antisite defect formation starts at 2% deformation and is investigated as a function of the degree of deformation; additional EL2 defects are not created. With ODENDOR it is shown that the atomistic structure of the EL2 defects changes in the deformed GaAs.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.346341

    Articles: DFG German National Licenses
  7. 7
    Kipfer, P. ; Lindolf, J. ; Hofmann, D. ; Müller, G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The conditions for the preparation of nominally undoped semi-insulating (SI) InP wafers by annealing under controlled phosphorus pressure are described. It is demonstrated by the results of electrical profile measurements (differential Hall effect) and by photoluminescence that diffusion effects in a thin peripheral layer (≈20 μm) can be correlated to a phosphorus in- and indium out-diffusion. But diffusion of these species is correlated to a donor behavior and relatively slow. It can, therefore, not be used to explain the SI bulk property which seems not to depend on the phosphorus overpressure during annealing.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.348442

    Articles: DFG German National Licenses
  8. 8
    Oettinger, K. ; Hofmann, D. M. ; Efros, Al. L. ; Meyer, B. K. ; Salk, M. ; Benz, K. W.

    [S.l.] : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Cd1−xZnxTe crystals grown by the traveling heater method have been investigated by low-temperature photoluminescence. The excitonic energy gap as a function of the alloy composition was determined over the complete range of x=0 to x=1. The composition dependent broadening of the neutral acceptor bound exciton (A 0X) line was determined. Theoretical calculations, where the A 0X exciton is treated within the pseudodonor model and the conduction/valence band offset between CdTe and ZnTe is taken into account, give close agreement with the experiment for x≤0.77. Evidence for clustering of Zn atoms is found for x≥0.77.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.350798

    Articles: DFG German National Licenses
  9. 9
    Schindler, W. ; Hofmann, D. ; Kirschner, J.

    [S.l.] : American Institute of Physics (AIP)
    Published 2000
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Localized electrochemical deposition of small Co clusters on Au (111) has been achieved by using the tip of a scanning tunneling microscope (STM) as an electrochemical nanoelectrode. In contrast to most of the reported techniques to create nanostructures, this approach avoids irreversible modifications of both substrate and deposit during the preparation process. A special polarization routine of the STM tip allows a purely electrochemical growth of Co clusters with diameters as small as 15 nm. © 2000 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.372913

    Articles: DFG German National Licenses
  10. 10
    Zschornack, G. ; Birke, U. ; Hofmann, D. ; Mühle, C. ; Musiol, G. ; Schmidt-Böcking, H. ; Schneider, M. ; Stiebing, K. E. ; Streitz, H. ; Zippe, C.

    [S.l.] : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    A 14.6-GHz electron cyclotron resonance ion source has been designed and will be installed at the TU Dresden. Contrary to other ECR sources some features are foreseen for atomic physics experiments to study the source plasma. Beside the description of source construction and computer-aided source control first physical experiments on the source are discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1142610

    Articles: DFG German National Licenses
  11. 11
    Meyer, B. K. ; Hofmann, D. M. ; Stadler, W. ; Petrova-Koch, V. ; Koch, F. ; Omling, P. ; Emanuelsson, P.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The defect properties of as-etched and annealed porous silicon are studied by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR). The paramagnetic defect observed is closely related to the Pb0 center at the Si/SiO2 interface. In EPR a minimum defect density of 1016 cm−3 is observed for the as-etched silicon, which reaches a maximum of 8×1018 cm−3 for samples annealed at about 400 °C. In the ODMR experiments, the same dangling bond center is observed on the 1.5 eV luminescence band enhancing the luminescence—but with increased sensitivity and as a decrease of the emission intensity in the infrared emission band at 1 eV of porous silicon.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.110559

    Articles: DFG German National Licenses
  12. 12
    Emanuelsson, P. ; Drechsler, M. ; Hofmann, D. M. ; Meyer, B. K. ; Moser, M. ; Scholz, F.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The electron effective masses for Al0.15Ga0.35In0.5P and Ga0.5In0.5P have been investigated using conventional and optically detected cyclotron resonance. For AlGaInP (partly ordered) it is determined to be m*=(0.14±0.01) m0. For disordered GaInP the mass is found to be m*=(0.092±0.003) m0 and for ordered material (band gap reduction ∼50 meV) m*=(0.088±0.003) m0. The experimentally deduced values are compared with those obtained from five-band k⋅p calculation.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.111445

    Articles: DFG German National Licenses
  13. 13
    Hofmann, D. ; Schindler, W. ; Kirschner, J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Magnetic Co clusters have been electrodeposited from an aqueous electrolyte onto Au surfaces in an electrochemical scanning tunneling microscope (STM). In a two-step electrochemical process, Co is first deposited onto a Au STM tip, then completely dissolved, and locally deposited onto the substrate underneath the STM tip due to local Co2+ oversaturation, which results in a laterally varying increase of the Co/Co2+ Nernst potential at the substrate surface. Mechanical tip–sample contacts or creation of substrate defects can be excluded. The structure size is of the order of the STM tip apex diameter, and is in detail determined by the substrate potential. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.122744

    Articles: DFG German National Licenses
  14. 14
    Drechsler, M. ; Meyer, B. K. ; Hofmann, D. M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The conduction band electron properties in ZnSe epitaxial layers on GaAs grown by molecular beam epitaxy are determined by far-infrared optically detected cyclotron resonance experiments. The high ωτ-value (in excess of 800) allows the observation of the spin splitting of the cyclotron resonance. The splitting is 8 mT in agreement with theoretical predictions. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.119744

    Articles: DFG German National Licenses
  15. 15
    Weingärtner, R. ; Wellmann, P. J. ; Bickermann, M. ; Hofmann, D. ; Straubinger, T. L. ; Winnacker, A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have investigated the effect of doping on absorption for various SiC polytypes, i.e., n-type (N) 6H–SiC, 4H–SiC, and 15R–SiC, p-type (Al) 6H–SiC, and 4H–SiC, and p-type (B) 6H–SiC. For these polytypes the band-gap narrowing with higher doping concentration is observed. In addition, for n-type doping below band-gap absorption bands at 464 nm for 4H–SiC, at 623 nm for 6H–SiC, and at 422 and 734 nm for 15R–SiC are observed. The peak intensities of these absorption bands show a linear relation to the charge carrier concentration obtained from Hall measurements. The corresponding calibration factors are given. As an application a purely optical wafer mapping of the spatial variation of the charge carrier concentration is demonstrated. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1430262

    Articles: DFG German National Licenses
  16. 16
    Zhou, H. ; Alves, H. ; Hofmann, D. M. ; Kriegseis, W. ; Meyer, B. K.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The structure of ZnO quantum dots prepared via the wet chemical method was studied. By introducing an annealing treatment (150 °C–500 °C), we also investigated the effect of the change in the structure of the dots on their luminescence properties. Our studies revealed that the surface of the as-prepared dots is passivated by a thin layer of Zn(OH)2, thus, the dots consist of a ZnO/Zn(OH)2 core-shell structure. We present evidence that the weak excitonic transition of ZnO quantum dots is strongly correlated with the presence of the surface shell of Zn(OH)2. When Zn(OH)2 is present, the excitonic transition is quenched. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1432763

    Articles: DFG German National Licenses
  17. 17
    Zeuner, A. ; Alves, H. ; Hofmann, D. M. ; Meyer, B. K.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    In this letter, we compare the properties of bulk and epitaxial ZnO. The ZnO thin films were grown on GaN templates and on ZnO single crystals by vapor phase deposition using Zn and NO2 as precursors. We use high-resolution x-ray diffraction to resolve the structural properties. The rocking curves of the bulk crystal are extremely broad caused by a mosaic structure of the substrate. The homoepitaxial ZnO film mimics the properties of the ZnO substrate whereas ZnO films on GaN templates showed superior rocking curve half width as small as 230 arcsec. The optical properties are investigated by temperature-dependent photoluminescence. Different donor and acceptor bound excitons can be distinguished for a half width of the recombination lines less than 1 meV. Free exciton emission is already detectable at liquid-He temperatures proofing the high quality of the epitaxial films. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1464218

    Articles: DFG German National Licenses
  18. 18
    Zschornack, G. ; Birke, U. ; Hofmann, D. ; Mühle, C. ; Musiol, G. ; Schmidt-Böcking, H. ; Schneider, M. ; Stiebing, K. E. ; Streitz, H. ; Zippe, C.

    [S.l.] : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    A 14.6-GHz electron cyclotron resonance ion source has been designed and will be installed at the TU Dresden. Contrary to other ECR sources some features are foreseen for atomic physics experiments to study the source plasma. Beside the description of source construction and computer-aided source control first physical experiments on the source are discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1143823

    Articles: DFG German National Licenses
  19. 19
    Stiebing, K. E. ; Hofmann, D. ; Schmidt-Böcking, H. ; Bethge, K. ; Streitz, H. ; Fröhlich, O. ; Schempp, A. ; Klein, H. ; Zschornack, G. ; Lyneis, C.

    [S.l.] : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    An ion beam facility for high-intensity beams of highly charged ions in the energy range between 1 and 200 keV/u has been funded and will be installed in 1992 at the Institut für Kernphysik, Frankfurt am Main, Germany. The facility is based on a 14.6 GHz ECR ion source and a variable-energy RFQ as postaccelerator. The facility is intended for atomic-physics and materials research.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1142791

    Articles: DFG German National Licenses
  20. 20
    Dirnstorfer, I. ; Hofmann, D. M. ; Meister, D. ; Meyer, B. K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Optical and electrical measurements were carried out on annealed CuIn(Ga)Se2 (CIGS) thin films with Ga content of 10%. Annealing of as-grown In-rich CIGS in air/oxygen at 400 °C changes the photoluminescence spectrum to a spectrum which is usually obtained from as-grown Cu-rich CIGS. The annealing step reduces the donor density and the high compensation. This effect allows the investigation of the defect levels of In-rich CIGS which is not possible in as-grown layers due to the dominating fluctuating potentials. The activation energies for the donors and acceptors in In-rich CIGS were found to be 10 and 75 meV, respectively. The densities are in the order of 1018 cm−3 each, with a compensation ratio of 0.99.© 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.369273

    Articles: DFG German National Licenses