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1Latest Papers from Table of Contents or Articles in PressD. P. Hibar ; J. L. Stein ; M. E. Renteria ; A. Arias-Vasquez ; S. Desrivieres ; N. Jahanshad ; R. Toro ; K. Wittfeld ; L. Abramovic ; M. Andersson ; B. S. Aribisala ; N. J. Armstrong ; M. Bernard ; M. M. Bohlken ; M. P. Boks ; J. Bralten ; A. A. Brown ; M. M. Chakravarty ; Q. Chen ; C. R. Ching ; G. Cuellar-Partida ; A. den Braber ; S. Giddaluru ; A. L. Goldman ; O. Grimm ; T. Guadalupe ; J. Hass ; G. Woldehawariat ; A. J. Holmes ; M. Hoogman ; D. Janowitz ; T. Jia ; S. Kim ; M. Klein ; B. Kraemer ; P. H. Lee ; L. M. Olde Loohuis ; M. Luciano ; C. Macare ; K. A. Mather ; M. Mattheisen ; Y. Milaneschi ; K. Nho ; M. Papmeyer ; A. Ramasamy ; S. L. Risacher ; R. Roiz-Santianez ; E. J. Rose ; A. Salami ; P. G. Samann ; L. Schmaal ; A. J. Schork ; J. Shin ; L. T. Strike ; A. Teumer ; M. M. van Donkelaar ; K. R. van Eijk ; R. K. Walters ; L. T. Westlye ; C. D. Whelan ; A. M. Winkler ; M. P. Zwiers ; S. Alhusaini ; L. Athanasiu ; S. Ehrlich ; M. M. Hakobjan ; C. B. Hartberg ; U. K. Haukvik ; A. J. Heister ; D. Hoehn ; D. Kasperaviciute ; D. C. Liewald ; L. M. Lopez ; R. R. Makkinje ; M. Matarin ; M. A. Naber ; D. R. McKay ; M. Needham ; A. C. Nugent ; B. Putz ; N. A. Royle ; L. Shen ; E. Sprooten ; D. Trabzuni ; S. S. van der Marel ; K. J. van Hulzen ; E. Walton ; C. Wolf ; L. Almasy ; D. Ames ; S. Arepalli ; A. A. Assareh ; M. E. Bastin ; H. Brodaty ; K. B. Bulayeva ; M. A. Carless ; S. Cichon ; A. Corvin ; J. E. Curran ; M. Czisch ; G. I. de Zubicaray ; A. Dillman ; R. Duggirala ; T. D. Dyer ; S. Erk ; I. O. Fedko ; L. Ferrucci ; T. M. Foroud ; P. T. Fox ; M. Fukunaga ; J. R. Gibbs ; H. H. Goring ; R. C. Green ; S. Guelfi ; N. K. Hansell ; C. A. Hartman ; K. Hegenscheid ; A. Heinz ; D. G. Hernandez ; D. J. Heslenfeld ; P. J. Hoekstra ; F. Holsboer ; G. Homuth ; J. J. Hottenga ; M. Ikeda ; C. R. Jack, Jr. ; M. Jenkinson ; R. Johnson ; R. Kanai ; M. Keil ; J. W. Kent, Jr. ; P. Kochunov ; J. B. Kwok ; S. M. Lawrie ; X. Liu ; D. L. Longo ; K. L. McMahon ; E. Meisenzahl ; I. Melle ; S. Mohnke ; G. W. Montgomery ; J. C. Mostert ; T. W. Muhleisen ; M. A. Nalls ; T. E. Nichols ; L. G. Nilsson ; M. M. Nothen ; K. Ohi ; R. L. Olvera ; R. Perez-Iglesias ; G. B. Pike ; S. G. Potkin ; I. Reinvang ; S. Reppermund ; M. Rietschel ; N. Romanczuk-Seiferth ; G. D. Rosen ; D. Rujescu ; K. Schnell ; P. R. Schofield ; C. Smith ; V. M. Steen ; J. E. Sussmann ; A. Thalamuthu ; A. W. Toga ; B. J. Traynor ; J. Troncoso ; J. A. Turner ; M. C. Valdes Hernandez ; D. van 't Ent ; M. van der Brug ; N. J. van der Wee ; M. J. van Tol ; D. J. Veltman ; T. H. Wassink ; E. Westman ; R. H. Zielke ; A. B. Zonderman ; D. G. Ashbrook ; R. Hager ; L. Lu ; F. J. McMahon ; D. W. Morris ; R. W. Williams ; H. G. Brunner ; R. L. Buckner ; J. K. Buitelaar ; W. Cahn ; V. D. Calhoun ; G. L. Cavalleri ; B. Crespo-Facorro ; A. M. Dale ; G. E. Davies ; N. Delanty ; C. Depondt ; S. Djurovic ; W. C. Drevets ; T. Espeseth ; R. L. Gollub ; B. C. Ho ; W. Hoffmann ; N. Hosten ; R. S. Kahn ; S. Le Hellard ; A. Meyer-Lindenberg ; B. Muller-Myhsok ; M. Nauck ; L. Nyberg ; M. Pandolfo ; B. W. Penninx ; J. L. Roffman ; S. M. Sisodiya ; J. W. Smoller ; H. van Bokhoven ; N. E. van Haren ; H. Volzke ; H. Walter ; M. W. Weiner ; W. Wen ; T. White ; I. Agartz ; O. A. Andreassen ; J. Blangero ; D. I. Boomsma ; R. M. Brouwer ; D. M. Cannon ; M. R. Cookson ; E. J. de Geus ; I. J. Deary ; G. Donohoe ; G. Fernandez ; S. E. Fisher ; C. Francks ; D. C. Glahn ; H. J. Grabe ; O. Gruber ; J. Hardy ; R. Hashimoto ; H. E. Hulshoff Pol ; E. G. Jonsson ; I. Kloszewska ; S. Lovestone ; V. S. Mattay ; P. Mecocci ; C. McDonald ; A. M. McIntosh ; R. A. Ophoff ; T. Paus ; Z. Pausova ; M. Ryten ; P. S. Sachdev ; A. J. Saykin ; A. Simmons ; A. Singleton ; H. Soininen ; J. M. Wardlaw ; M. E. Weale ; D. R. Weinberger ; H. H. Adams ; L. J. Launer ; S. Seiler ; R. Schmidt ; G. Chauhan ; C. L. Satizabal ; J. T. Becker ; L. Yanek ; S. J. van der Lee ; M. Ebling ; B. Fischl ; W. T. Longstreth, Jr. ; D. Greve ; H. Schmidt ; P. Nyquist ; L. N. Vinke ; C. M. van Duijn ; L. Xue ; B. Mazoyer ; J. C. Bis ; V. Gudnason ; S. Seshadri ; M. A. Ikram ; N. G. Martin ; M. J. Wright ; G. Schumann ; B. Franke ; P. M. Thompson ; S. E. Medland
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-01-22Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Adolescent ; Adult ; Aged ; Aged, 80 and over ; Aging/genetics ; Apoptosis/genetics ; Brain/*anatomy & histology ; Caudate Nucleus/anatomy & histology ; Child ; Female ; Gene Expression Regulation, Developmental/genetics ; Genetic Loci/genetics ; Genetic Variation/*genetics ; *Genome-Wide Association Study ; Hippocampus/anatomy & histology ; Humans ; Magnetic Resonance Imaging ; Male ; Membrane Proteins/genetics ; Middle Aged ; Organ Size/genetics ; Putamen/anatomy & histology ; Sex Characteristics ; Skull/anatomy & histology ; Young AdultPublished by: -
2Articles: DFG German National LicensesStamper, A. K. ; Greve, D. W. ; Schlesinger, T. E.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Highly textured yttria-stabilized ZrO2 films have been deposited using rf diode sputtering from a single polycrystalline target. These films were deposited on oxidized silicon substrates at substrate temperatures up to 600 °C using a 90% argon and 10% oxygen sputtering gas mixture. The films crystallized in the cubic phase and were large grained (d∼500 A(ring)). Films deposited above 500 °C exhibit extreme (100) texturing while films deposited without substrate heating exhibit extreme (111) texturing. The effect of oxygen annealing on the crystal structure of these films has also been studied.Type of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesPolyakov, A. Y. ; Shin, M. ; Freitas, J. A. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Shallow and deep centers were studied by means of temperature dependent Hall effect and photoluminescence (PL) measurements in two sets of undoped n-AlGaN samples grown by organometallic vapor phase epitaxy. The samples of these two series were grown under different conditions and had, as a result, electron concentrations differing by several orders of magnitude. The composition dependence of ionization energies of dominant donors in these two sets of samples is very different indicating that different types of centers are involved, but in both cases they are most probably related to some native defects. These defects behave as hydrogen-like donors for low Al compositions and become increasingly deeper with increasing Al content. The shallow-deep transition occurs at about x=0.2 in the low conductivity AlxGa1−xN series and at about x=0.5 for the high conductivity series. Several PL bands were detected in AlGaN and it is shown that the band at 3.05 eV is due to a radiative transition between deep donors in the upper part of the band gap and holes in the valence band or on shallow acceptors. For the yellow luminescence band at 2.25 eV it is demonstrated that this band consists of two overlapping bands and that the dominant band is due to a transition between the native donors and a carbon-related deep center. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Selective epitaxy of GexSi1−x in an ultrahigh-vacuum chemical vapor deposition reactor from SiH4 and GeH4/H2 is reported for the first time. Growth is performed at 600 °C on patterned wafers after an 800 °C bake which provides a clean silicon surface. Selective growth is maintained during a short incubation time. GeH4/H2 is found to increase the incubation time and the growth rate improving selectivity. Diodes fabricated from selectively grown films demonstrate high material and film/oxide interface quality.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We report absorption measurements on two types of long-wave infrared detector structures. Both types were grown by ultrahigh vacuum chemical vapor deposition, and were characterized by multiple analytic techniques. In both multiple quantum well (MQW) and heterojunction internal photoemission (HIP) structures, it is found that free-carrier absorption is dominant for normally incident radiation. The measured absorption is fit well by the classical expression for free-carrier absorption, with scattering times of about 10−14 s (MQW) and 5×10−15 s (HIP). The measured absorption is used to evaluate the responsivity that results when all carriers energetically able to surmount the barrier are collected. Based on this analysis, higher responsivity is predicted for HIP detectors, largely because of the greater density of initial states. The responsivity obtained in practice depends upon the photoconductive gain (MQW detectors) or the escape probability (HIP detectors). The escape probability for HIP detectors is measured in Part II. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the deposition of epitaxial films of GexSi1−x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665 °C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: GexSi1−x/Si heterojunction internal photoemission (HIP) detectors with thresholds in the medium-wave infrared and long-wave infrared (LWIR) regions were fabricated and characterized. Measurements of the photoresponse are fit well by a theory which takes into account the scattering of excited carriers. The probability of escape of an excited hole is calculated and compared with that observed in another detector, the multiple quantum well structure. It is shown that HIP detectors can achieve background-limited performance in the LWIR region when operated at 40 K.© 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesDitizio, R. A. ; Liu, G. ; Fonash, S. J. ; Hseih, B.-C. ; Greve, D. W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Electron cyclotron resonance plasmas have been used to produce the most effective, shortest time plasma hydrogenation of thin-film polycrystalline silicon transistors yet reported. We demonstrate that significant improvement in device characteristics can be achieved with these plasmas using exposure times of the order of only 1 min and that 5 min exposures give saturated characteristics of a 2 V threshold voltage, a 65 cm2/V s mobility, and a 107 on/off ratio. We also explore the pressure and power level dependence of this passivation, as well as the effects of shielding with a grid, and show that the more efficient and more stable electron cyclotron resonance hydrogen exposures are at lower pressures.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesMigliuolo, M. ; Stamper, A. K. ; Greve, D. W. ; Schlesinger, T. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Thin films of YBa2Cu3O7−δ have been grown on (100) silicon substrates by single target rf diode sputtering. Yttria-stabilized zirconia buffer layers were used to minimize substrate-film reactions. Off-stoichiometric targets were used to compensate for differences between film and target stoichiometries. The composition of the superconducting layer is also influenced by post-deposition anneals, with films closer to the desired stoichiometry resulting from the higher temperature anneals. Film thicknesses spanned the 0.5–2.0 μm range and the onset and zero resistance ( ρ〈10−7 Ω cm) temperatures were found to be 95 and 70 K, respectively, for 1.8-μm-thick films.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStamper, A. ; Greve, D. W. ; Wong, D. ; Schlesinger, T. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The deposition of films of YBa2Cu3O6+x by rf diode sputtering on alumina has been investigated. Although a stoichiometric (123) target was employed, the film composition differs from that of the target and varies as a function of position on the substrate. Films displaying a broad resistive transition have been produced in a reproducible manner. It is demonstrated that the use of a ZrO2 buffer layer decreases the transition width significantly and consistently yields films which have a more metallic-like behavior above Tc.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesLee, J-W. ; Schlesinger, T. E. ; Stamper, A. K. ; Migliuolo, M. ; Greve, D. W. ; Laughlin, D. E.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have employed transmission electron microscopy and x-ray diffraction to investigate the properties of yttria-stabilized zirconium oxide (YSZ) sputter deposited on silicon. It is shown that the as-deposited YSZ films are polycrystalline (grain size 7–20 nm) with microvoids between grains. Anneals of these films at temperatures of 800, 950, and 1100 °C for 1 h eliminate the microvoids and cause the grain size to increase from 20 to 50 nm at the higher anneal temperatures. Particular texture of the YSZ film is controlled by the details of the deposition conditions. Resistivity measurements of superconducting films deposited on silicon using these buffer layers are also presented.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesGreve, D. W. ; McLaughlin, G. ; Capano, M. A. ; Racanelli, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on the uniformity of composition and thickness of epitaxial GexSi1−x layers grown by ultrahigh vacuum chemical-vapor deposition. Double-crystal x-ray diffractometry showed that variations in thickness are less than ±2.2% and variations in composition less than ±2.5% from center to edge of a 75 mm wafer. The variations observed are consistent with the predictions of Monte Carlo simulations.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesMisra, R. ; Greve, D. W. ; Schlesinger, T. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The absorption characteristics of GexSi1−x quantum well infrared photodetector (QWIP) structures have been studied in samples over a range of germanium compositions and doping levels. In all these samples, quantum well intersubband transitions are either very weak or nonexistent for normally incident light. However, free carrier absorption in GexSi1−x quantum wells is a strong absorbing mechanism in the long wavelength infrared regime, and has been found to be stronger than in silicon for similar doping levels. Therefore, detectors relying upon free carrier absorption in GexSi1−x quantum wells may offer superior responsivity and quantum efficiency. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesChen, D. L. ; Greve, D. W. ; Guzman, A. M.
[S.l.] : American Institute of Physics (AIP)
Published 1985Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The grain boundary passivation effect in polycrystalline silicon (polysilicon) thin films by hydrogen implantation has been studied. Boron-doped polysilicon was implanted with low-energy ions followed by low-temperature annealing. Resistivity measurements show that the change in resistivity after implantation depends on the boron concentration in polysilicon. At low boron concentration (〈1×1019 cm−3), three orders of magnitude decrease in resistivity has been achieved. However, at higher boron concentration (〉1×1019 cm−3), the resistivity increased after hydrogen implantation. This increase is ascribed to implant-induced damage which cannot be totally recovered by low-temperature annealing.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have studied substitutional carbon incorporation in Si1−yCy alloys grown on Si (100) by ultrahigh vacuum chemical vapor deposition using silane and methylsilane as silicon and carbon precursors. Carbon incorporation has been studied in the growth temperature range of 550–650 °C. The total carbon content of the alloys increases linearly with the methylsilane partial pressure and a methylsilane sticking coefficient approximately two times higher than that of silane was determined from the data. Substitutional carbon content in the alloys tends to saturate at higher methylsilane flows. Our results, together with other previous reports, provide new insight into the roles of gas phase and surface reactions in determining growth rates and carbon incorporation efficiency. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesRasky, P. H. L. ; Greve, D. W. ; Kryder, M. H. ; Dutta, S.
[S.l.] : American Institute of Physics (AIP)
Published 1985Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The feasibility of combining silicon and magnetic bubble technologies is demonstrated in this paper. Functional MOSFETs have been fabricated on top of bubble films coated with 1 μm thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesLee, J.-W. ; Migliuolo, M. ; Stamper, A. K. ; Greve, D. W. ; Laughlin, D. E. ; Schlesinger, T. E.
[S.l.] : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The microstructure of YBa2Cu3O7−δ (YBCO) films grown on silicon and alumina substrates with yttria-stabilized zirconia (YSZ) buffer layers has been studied by transmission electron microscopy (TEM) and x-ray diffraction. The as-deposited films are not amorphous, but are in fact composed of small crystalline grains. The top surface of the post-annealed YBCO film consists mainly of the orthorhombic structure of YBCO with large grains. Other phases are present within the films and have been identified. The presence of a very thin interdiffused layer of BaZrO3 between the YSZ and the YBCO has been shown by cross-sectional TEM.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The influence of an oxidizing ambient on the structure and electrical characteristics of thin films of semi-insulating polysilicon (SIPOS) has been studied. It is shown that SIPOS films 135 nm thick can be completely oxidized to amorphous silicon dioxide after 24 h at 600 °C in wet oxygen. The midgap interface state density after oxidation and postmetallization anneal is 4×1010 cm−2 eV−1. We also show that this material is suitable for use as a low-temperature deposited gate dielectric for polycrystalline thin-film transistors.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 0001-6918Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PsychologyType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 1432-198XKeywords: Key words Tubular proteinuria ; Henoch-Schönlein purpura ; NephritisSource: Springer Online Journal Archives 1860-2000Topics: MedicineNotes: Abstract The prognosis of Henoch-Schönlein purpura (HSP) is mainly determined by the involvement of the kidney, but prognostic markers have not been established. To study the extent of tubular involvement in HSP and its relationship to the development of HSP nephritis, we measured the urinary excretion of two tubular marker proteins in 36 children with HSP. After admission, urinary N-acetyl-β-D-glucosaminidase (NAG) was determined in 20 children and α1-microglobulin (α1-MG) in 16 children respectively. These values were compared with the biochemical data on admission, 1 month, 6 months, and 12 months later. A total of 198 24-h urine samples from healthy children were used for the establishment of reference data for NAG and α1-MG (mean±2 SD). Twenty-one patients had elevated excretion of either NAG (〉mean+2 SD, n=12) or α1-MG (〉mean+2 SD, n=9). The highest values (〉mean+4 SD) were found in patients with early kidney involvement. Normal values were accompanied by a benign further clinical course. Children with intermediate high values (〉mean+2 SD, 〈mean+4 SD) developed signs of renal involvement during follow-up. Hence, tubular proteinuria is common during the early stages of HSP. NAG and α1-MG levels correlate well with the extent of early and late renal involvement. Tubular marker proteins may be prognostic markers for the development of HSP nephritis.Type of Medium: Electronic ResourceURL: