Search Results - (Author, Cooperation:D. Gilbert)
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1Latest Papers from Table of Contents or Articles in PressMa, D., Gilbert, T., Pignanelli, C., Tarade, D., Noel, M., Mansour, F., Gupta, M., Ma, S., Ropat, J., Curran, C., Vshyvenko, S., Hudlicky, T., Pandey, S.
The Federation of American Societies for Experimental Biology (FASEB)
Published 2018Staff ViewPublication Date: 2018-01-03Publisher: The Federation of American Societies for Experimental Biology (FASEB)Print ISSN: 0892-6638Electronic ISSN: 1530-6860Topics: BiologyPublished by: -
2Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2015-08-28Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: *Adaptation, Physiological ; Aggression/*physiology ; Animals ; *Biological Evolution ; Female ; *Selection, Genetic ; Spiders/*physiologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressJ. K. Colbourne ; M. E. Pfrender ; D. Gilbert ; W. K. Thomas ; A. Tucker ; T. H. Oakley ; S. Tokishita ; A. Aerts ; G. J. Arnold ; M. K. Basu ; D. J. Bauer ; C. E. Caceres ; L. Carmel ; C. Casola ; J. H. Choi ; J. C. Detter ; Q. Dong ; S. Dusheyko ; B. D. Eads ; T. Frohlich ; K. A. Geiler-Samerotte ; D. Gerlach ; P. Hatcher ; S. Jogdeo ; J. Krijgsveld ; E. V. Kriventseva ; D. Kultz ; C. Laforsch ; E. Lindquist ; J. Lopez ; J. R. Manak ; J. Muller ; J. Pangilinan ; R. P. Patwardhan ; S. Pitluck ; E. J. Pritham ; A. Rechtsteiner ; M. Rho ; I. B. Rogozin ; O. Sakarya ; A. Salamov ; S. Schaack ; H. Shapiro ; Y. Shiga ; C. Skalitzky ; Z. Smith ; A. Souvorov ; W. Sung ; Z. Tang ; D. Tsuchiya ; H. Tu ; H. Vos ; M. Wang ; Y. I. Wolf ; H. Yamagata ; T. Yamada ; Y. Ye ; J. R. Shaw ; J. Andrews ; T. J. Crease ; H. Tang ; S. M. Lucas ; H. M. Robertson ; P. Bork ; E. V. Koonin ; E. M. Zdobnov ; I. V. Grigoriev ; M. Lynch ; J. L. Boore
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-02-05Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Adaptation, Physiological ; Amino Acid Sequence ; Animals ; Base Sequence ; Chromosome Mapping ; Daphnia/*genetics/physiology ; *Ecosystem ; Environment ; Evolution, Molecular ; Gene Conversion ; Gene Duplication ; Gene Expression ; Gene Expression Profiling ; Gene Expression Regulation ; Genes ; Genes, Duplicate ; *Genome ; Metabolic Networks and Pathways/genetics ; Molecular Sequence Annotation ; Molecular Sequence Data ; Multigene Family ; Phylogeny ; Sequence Analysis, DNAPublished by: -
4Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-05-10Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-10-03Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2011-06-17Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Choice Behavior/physiology ; Death ; Decision Making/ethics/*physiology ; *Human Characteristics ; Humans ; Models, Economic ; MoralsPublished by: -
7Latest Papers from Table of Contents or Articles in PressTimo van Kerkoerle, Sally A. Marik, Stephan Meyer zum Alten Borgloh, Charles D. Gilbert
National Academy of Sciences
Published 2018Staff ViewPublication Date: 2018-10-10Publisher: National Academy of SciencesPrint ISSN: 0027-8424Electronic ISSN: 1091-6490Topics: BiologyMedicineNatural Sciences in GeneralPublished by: -
8Articles: DFG German National LicensesStaff View
ISSN: 0039-3657Topics: English, American StudiesNotes: Restoration and Eighteenth CenturyURL: -
9Latest Papers from Table of Contents or Articles in PressLevari, D. E., Gilbert, D. T., Wilson, T. D., Sievers, B., Amodio, D. M., Wheatley, T.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-06-29Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: PsychologyPublished by: -
10Latest Papers from Table of Contents or Articles in PressBreitburg, D., Levin, L. A., Oschlies, A., Gregoire, M., Chavez, F. P., Conley, D. J., Garcon, V., Gilbert, D., Gutierrez, D., Isensee, K., Jacinto, G. S., Limburg, K. E., Montes, I., Naqvi, S. W. A., Pitcher, G. C., Rabalais, N. N., Roman, M. R., Rose, K. A., Seibel, B. A., Telszewski, M., Yasuhara, M., Zhang, J.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-01-05Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Geochemistry, Geophysics, Online OnlyPublished by: -
11Articles: DFG German National LicensesFehl, D. L. ; Sujka, B. R. ; Vehar, D. W. ; Westfall, R. L. ; Lorence, L. J. ; Rice, D. A. ; Gilbert, D. W.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: Hermes III is a pulsed power, Bremsstrahlung simulator used for radiation-hardness testing of electronics components [19-MeV spectrum, 20-ns pulse duration, and typical doses (silicon) ≤100 krad (1 kGy)]. CaF2:Mn thermoluminescent dosimeter chips (TLDs) have been compared to a set of x-ray calorimeters in the Hermes III environment for doses between 10–75 krad. Similar to a design reported by Murray and Attix, this set of detectors included different dosimetric materials (silicon and aluminum) and two independent temperature sensors (thermistors and thermocouples). The electronic recording system was also updated. The average disagreement between TLDs and calorimeters was 1%–3%. Radiation transport calculations, however, suggest a possible bias of 4%–6% (source unknown). With the silicon calorimeter the ac bridge, which measured the resistance of thermistor temperature sensors, was extremely sensitive to EMP. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesMartel, P. ; Gilbert, D. ; Labeille, B. ; Kanitakis, J. ; Joly, P.
Oxford, UK : Blackwell Science Ltd
Published 2000Staff ViewISSN: 1365-2133Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesAlphonse, G. A. ; Connolly, J. C. ; Dinkel, N. A. ; Palfrey, S. L. ; Gilbert, D. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A double-heterojunction angled stripe AlGaAs device consisting of an index-guided ridge waveguide with gain-guided facet regions has produced cw output powers of 20 mW with less than 1% spectral modulation from a 300-μm-long diode. These properties enable these devices to have important use in high-sensitivity fiber optic gyroscopes and as broadband traveling-wave optical amplifiers.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesBour, D. P. ; Martinelli, Ramon U. ; Gilbert, D. B. ; Elbaum, L. ; Harvey, M. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The performance of a series of InxGa1−xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000 nm is discussed. Less-strained devices, with x=0.20 and QW thickness 7 nm (λ∼930 nm), perform comparably with GaAs QW lasers. Longer wavelength (λ〉950 nm), more highly strained lasers exhibit poorer performance. Our results suggest that interfacial recombination limits the performance at the longer wavelength structures.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesBour, D. P. ; Gilbert, D. B. ; Elbaum, L. ; Harvey, M. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Continuous wave (cw), high-power operation of a strained In0.2Ga0.8As/ AlGaAs quantum well laser, grown by atmospheric pressure organometallic vapor phase epitaxy, is reported. The laser active region consists of a single 70 A(ring) In0.2Ga0.8As/Al0.2Ga0.8As quantum well, with optical confinement provided by a graded index separate confinement heterostructure. The threshold current density and differential quantum efficiency of a 90 μm×600 μm stripe with uncoated facets are ∼200 A/cm2 and 46%, respectively. Lasing wavelength is ∼930 nm, and the cw single ended power versus current characteristic is linear up to 250 mW (1 A current). In the short-cavity (〈300 μm) regime, these devices have high thresholds and have been observed to lase at shorter wavelength, presumably due to a saturation of gain at the lowest energy transition. The characteristic temperature is 150 K and decreases somewhat with cavity length. This suggests that some nonradiative process, most likely Auger recombination, contributes significantly to quantum well gain saturation.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesBour, D. P. ; Martinelli, Ramon U. ; Hawrylo, F. Z. ; Evans, G. A. ; Carlson, N. W. ; Gilbert, D. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: By adjusting the carrier confining structure and the optical confining structure of strained InGaAs/AlGaAs single quantum well (QW) lasers, an improvement in performance has been obtained. First, the influence of optical confinement was examined by comparing two graded-index confining structures. For InxGa1−xAs QWs with either x=0.20 or x=0.25, lasers with greater optical confinement factor had improved performance, with both lower threshold (180 A/cm2 for x=0.20) and higher characteristic temperature (250 K for x=0.20), despite their reduced carrier confining potentials. Second, experiments on graded-composition quantum wells show that thin step-grading layers result in improved performance. In this structure, where the QW has x=0.35, and the step layers have x=0.15, the optimum step thickness is 30–40 A(ring). Thicker step layers appear to create too much strain, degrading the laser operation. These results indicate that step grading of strained QWs produces active region interfaces with lower defect density, and that step grading is especially useful in improving the performance of long-wavelength, highly strained InGaAs/AlGaAs QW lasers.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesConnolly, J. ; Dinkel, N. ; Menna, R. ; Gilbert, D. ; Harvey, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High-power GaAs/AlGaAs double-heterostructure lasers have been fabricated on Si substrates using a single-step metalorganic chemical vapor deposition process. An output power of 130 mW (per facet) and a slope efficiency of 38% have been obtained under pulsed operation. The peak emission wavelength of the laser was 8823 A(ring) and the beam full width at half power for the parallel and perpendicular far-field radiation patterns were 6° and 41°, respectively.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesSingh, R. K. ; Gilbert, D. ; Tellshow, R. ; Holloway, P. H. ; Ochoa, R. ; Simmons, J. H. ; Koba, R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have deposited diamond thin films remote from the active plasma region using an electron cyclotron resonance chemical vapor deposition technique. Diamond films were fabricated at temperatures in the range of 550–650 °C and gas pressures between 25 and 60 mTorr. The volume ratio of water to methanol was varied from 1:20 to 1:5 to optimize diamond film growth. High methanol content resulted in multiple nucleation in the growing diamond film, while higher water content led to complete etching of the film. A positive electrical bias was found to be essential for diamond thin film growth remote from the plasma region. The films were characterized by x-ray diffraction, micro-Raman, and scanning electron microscopy for phase identification, surface morphology, and bonding characteristics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesSingh, Rajiv K. ; Gilbert, D. R. ; Laveigne, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The growth of continuous adherent diamond thin films on optically transparent substrates is important for the development of corrosion and erosion resistant infrared windows for many applications. Until now, the growth of adherent diamond films on optically transparent substrates like sapphire has been unsuccessful due to the large thermal mismatch between the film and the substrate and the absence of an interfacial carbide "glue'' layer. By employing a low temperature (500–550 °C), low pressure (∼1 Torr) electron–cyclotron–resonance chemical-vapor-deposition process, and utilizing a dispersed–particulate diamond suspension for nucleation, adherent diamond thin films have been fabricated on sapphire substrates. Raman spectroscopy showed that the diamond peak was shifted approximately 6 cm−1 above its equilibrium position, suggesting the presence of very large compressive stresses (∼3.2 GPa) in the film. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 1365-3083Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: Human erythrocytes coaled with each of the four human IgG subclasses were used to detect Fcγ receptors on human peripheral blood lymphocytes (HPBL). Rosette formation was obtained only with erythrocytes coated with IgG3 (EAγ3). Neuraminidase treatment of HPBL induced rosette formation with EAγ1, EAγ2, and EAγ4 complexes. Pronase treatment also induced rosette formation to a lesser extent, but abolished EAγ3 rosetting. Trypsin treatment enhanced EAγ3 rosette formation. These phenomena occurred on both ‘T’ and ‘non-T’ lymphocytes. Erythrocytes coaled with small quantities of IgG3 did not form rosettes with HPBL. Neuraminidase treatment enhanced their binding, whereas pronase did not. These two phenomena occurred only on non-T lymphocytes. Rosette formation with EAγ1 was also obtained with lymphocytes stimulated in vitro with mitogens. After 2 days of culture, stimulated lymphocytes expressed receptors that were able to bind both EAγ1 and EAγ3 complexes. These results suggest the existence of cryptic receptors for IgG1, IgG2, and IgG4 that could be disclosed by neuraminidase and pronase treatment and exposed on stimulated lymphocytes. A hypothesis of one or several Fcγ receptors is suggested.Type of Medium: Electronic ResourceURL: