Search Results - (Author, Cooperation:D. Friedman)
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1Latest Papers from Table of Contents or Articles in PressIzhak, L., Wildbaum, G., Weinberg, U., Shaked, Y., Alami, J., Dumont, D., Friedman, B., Stein, A., Karin, N.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-03-20Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
2Latest Papers from Table of Contents or Articles in PressA. S. Allen ; S. F. Berkovic ; P. Cossette ; N. Delanty ; D. Dlugos ; E. E. Eichler ; M. P. Epstein ; T. Glauser ; D. B. Goldstein ; Y. Han ; E. L. Heinzen ; Y. Hitomi ; K. B. Howell ; M. R. Johnson ; R. Kuzniecky ; D. H. Lowenstein ; Y. F. Lu ; M. R. Madou ; A. G. Marson ; H. C. Mefford ; S. Esmaeeli Nieh ; T. J. O'Brien ; R. Ottman ; S. Petrovski ; A. Poduri ; E. K. Ruzzo ; I. E. Scheffer ; E. H. Sherr ; C. J. Yuskaitis ; B. Abou-Khalil ; B. K. Alldredge ; J. F. Bautista ; A. Boro ; G. D. Cascino ; D. Consalvo ; P. Crumrine ; O. Devinsky ; M. Fiol ; N. B. Fountain ; J. French ; D. Friedman ; E. B. Geller ; S. Glynn ; S. R. Haut ; J. Hayward ; S. L. Helmers ; S. Joshi ; A. Kanner ; H. E. Kirsch ; R. C. Knowlton ; E. H. Kossoff ; R. Kuperman ; S. M. McGuire ; P. V. Motika ; E. J. Novotny ; J. M. Paolicchi ; J. M. Parent ; K. Park ; R. A. Shellhaas ; J. J. Shih ; R. Singh ; J. Sirven ; M. C. Smith ; J. Sullivan ; L. Lin Thio ; A. Venkat ; E. P. Vining ; G. K. Von Allmen ; J. L. Weisenberg ; P. Widdess-Walsh ; M. R. Winawer
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-08-13Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Child Development Disorders, Pervasive ; Cohort Studies ; Exome/genetics ; Female ; Fragile X Mental Retardation Protein/metabolism ; Genetic Predisposition to Disease/genetics ; Humans ; Infant ; Intellectual Disability/*genetics/physiopathology ; Lennox Gastaut Syndrome ; Male ; Mutation/*genetics ; Mutation Rate ; N-Acetylglucosaminyltransferases/genetics ; Probability ; Receptors, GABA-A/genetics ; Spasms, Infantile/*genetics/physiopathologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressLiu, Y., Jing, F., Yi, W., Mendelson, A., Shi, P., Walsh, R., Friedman, D. F., Minniti, C., Manwani, D., Chou, S. T., Yazdanbakhsh, K.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-04-06Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Transfusion Medicine, Red Cells, Iron, and ErythropoiesisPublished by: -
4Latest Papers from Table of Contents or Articles in PressChou, S. T., Evans, P., Vege, S., Coleman, S. L., Friedman, D. F., Keller, M., Westhoff, C. M.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-09-14Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Sickle Cell Disease, Transfusion Medicine, Red Cells, Iron, and ErythropoiesisPublished by: -
5Latest Papers from Table of Contents or Articles in PressMarks, L. J., McCarten, K. M., Pei, Q., Friedman, D. L., Schwartz, C. L., Kelly, K. M.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-09-14Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Pediatric Hematology, Lymphoid Neoplasia, Clinical Trials and ObservationsPublished by: -
6Articles: DFG German National LicensesZhang, Yong ; Mascarenhas, A. ; Ernst, P. ; Driessen, F. A. J. M. ; Friedman, D. J. ; Bertness, K. A. ; Olson, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Optical polarization in ordered GaInP2 alloys has been studied by low-temperature photoluminescence. A perturbative theory that includes the effects of lattice mismatch, substrate misorientation, and excitonic transitions has been developed for making quantitative comparisons between experimental results and theoretical predictions. We show that to obtain quantitative information about ordering from the polarization of near-band-gap transitions, all of the above-mentioned effects should be taken into account. This study demonstrates that the electronic and optical properties of a monolayer superlattice formed by partial ordering in the GaInP2 alloy can be well described by a simple perturbative Hamiltonian, i.e., a quasicubic model. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesBertness, K. A. ; Kurtz, Sarah R. ; Friedman, D. J. ; Kibbler, A. E. ; Kramer, C. ; Olson, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1-sun concentration and air mass (AM) 1.5 global and 25.7% 1-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under concentration are also discussed.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesFriedman, D. J. ; Horner, G. S. ; Kurtz, Sarah R. ; Bertness, K. A. ; Olson, J. M. ; Moreland, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap Eg from that of the disordered alloy. The Eg lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of Eg on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, Eg decreases dramatically with increasing epilayer thickness: Eg for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of Eg on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesFriedman, D. J. ; Kibbler, A. E. ; Olson, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We present Hall mobility data μ(T) in the range T=300–600 K for GaInP2, an alloy whose band gap has been shown to decrease with increasing compositional ordering. Samples grown to give high ordering are found to have consistently lower mobilities than samples with low ordering, suggesting that the mobility is limited by cluster scattering by ordered domains. We analyze μ(T) in terms of a cluster scattering model developed by Marsh [Appl. Phys. Lett. 41, 732 (1982)] and others to estimate the relative volume fraction of cluster scattering sites in the ordered and disordered material.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesFriedman, D. J. ; Zhu, Jane G. ; Kibbler, A. E. ; Olson, J. M. ; Moreland, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Using transmission electron diffraction dark-field imaging, atomic force microscopy (AFM), and Nomarski microscopy, we demonstrate a direct connection between surface topography and cation site ordering in GaInP2. We study epilayers grown by organometallic vapor-phase epitaxy on GaAs substrates oriented 2° off (100) towards (110). Nomarski microscopy shows that, as growth proceeds, the surface of ordered material forms faceted structures aligned roughly along [011]. A comparison with the dark-field demonstrates that the [11¯1] and [111¯] ordering variants are segregated into complementary regions corresponding to opposite-facing facets of the surface structures. This observation cannot be rationalized with the obvious but naive model of the surface topography as being due to faceting into low-index planes. However, AFM reveals that the facets are in fact not low-index planes, but rather are tilted 4° from (100) towards (111)B. This observation explains the segregation of the variants: the surface facets act as local (111)B-misoriented growth surfaces which select only one of the two variants.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesFriedman, D. J. ; Kibbler, A. E. ; Reedy, R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We show that the p-type doping of Ga0.5In0.5P grown by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid-1018 holes/cm3 range can be achieved for the as-grown material. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesAhrenkiel, R. K. ; Johnston, S. W. ; Keyes, B. M. ; Friedman, D. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesAhrenkiel, R. K. ; Johnston, S. W. ; Keyes, B. M. ; Friedman, D. J. ; Vernon, S. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A series of devices with the structure GaAs/GaAs1−xNx/GaAs and 0.01〈x〈0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesKurtz, Sarah ; Webb, J. ; Gedvilas, L. ; Friedman, D. ; Geisz, J. ; Olson, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm−1 (Ga–N stretch) and two or three bands at ∼3100 cm−1 (N–H stretch). The change in the Ga–N stretch absorption can be explained if the nitrogen environment is converted from NGa4 to NInGa3 after annealing. The N–H stretch is also changed after annealing, implying a second, and unrelated, structural change. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesGeisz, J. F. ; Friedman, D. J. ; Olson, J. M. ; Kurtz, Sarah R. ; Reedy, R. C. ; Swartzlander, A. B. ; Keyes, B. M. ; Norman, A. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the epitaxial growth of zinc-blende BxGa1−x−yInyAs and BxGa1−xAs on GaAs substrates with boron concentrations (x) up to 2%–4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1−xAs increases by only 4–8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1−x−yInyAs layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1−yInyAs layer with the same band gap. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesBalcioglu, A. ; Ahrenkiel, R. K. ; Friedman, D. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have studied deep-level impurities in p+–n GaInNAs solar cells using deep-level transient spectroscopy (DLTS). These films were grown by atmospheric- and low-pressure metalorganic vapor-phase epitaxy. The base layer is doped with silicon, and the emitter layer is zinc doped. Two types of samples have been studied: samples were grown with and without the addition of oxygen impurity. Two electron traps were found in all samples. These are designated as: E1, at EC−0.23–EC−0.27 eV, E2 at EC−0.45 eV, and E2* at 0.77 eV. With the addition of oxygen impurity, DLTS showed additional traps designated as E3 (electron) at EC−0.59 eV and H3 (hole) at EV+0.59 eV. Using secondary ion mass spectroscopy, the oxygen concentration was found to be about 2–3×1019 and 1×1017 cm−3 in two sets of samples. However, only samples containing oxygen contained the two near-midgap levels (E3 and H3). We present evidence that these levels are associated with the oxygen defect. As we change the dc bias voltage, the E3 trap disappears in unison with the appearance of the H3 trap. Furthermore, E3 and H3 trap levels have comparable capture cross sections. This oxygen-related trap is an effective recombination center. The measured Shockley–Hall–Read lifetime for this center is about 0.6 μs. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesFriedman, D. B. ; Adamick, R. D. ; Musch, T. I. ; Ordway, G. A. ; Williams, R. S.
Oxford, UK : Blackwell Publishing Ltd
Published 1991Staff ViewISSN: 1600-0838Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineSports ScienceNotes: We tested the hypothesis that the biochemical properties of cardiac beta-adrenergic receptors (βAR), as determined by standard in vitro methods, limit physiological responsiveness of dogs to PAR stimulation during peak exercise. Accordingly, we measured oxygen consumption, left ventricular dP/dt at 40 mmHg developed pressure, heart rate, and cardiac output during maximal dynamic exercise in 13 adult mongrel dogs. These studies were followed by biochemical analysis of PAR in membrane homogenates of left ventricle from the same animals using saturation binding and agonist competition curves for [125I] cyanopindolol. There was a substantial range in both biochemical and physiological variables within this population of normal dogs. However, there were no significant correlations between biochemical descriptors of cardiac PAR and any physiological variables measured during exercise. These results suggest that receptor-effector coupling and maximal cardiac performance during intense sympathetic stimulation of peak exercise are limited by factors other than the biochemical properties of cardiac PAR.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 0090-5720Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: EconomicsType of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 0301-0511Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PsychologyType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 0301-0511Keywords: Memory ; N300 ; P300 ; event-related potential ; semantic primingSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PsychologyType of Medium: Electronic ResourceURL: