Search Results - (Author, Cooperation:D. Doughty)
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1Latest Papers from Table of Contents or Articles in PressO. Hen ; M. Sargsian ; L. B. Weinstein ; E. Piasetzky ; H. Hakobyan ; D. W. Higinbotham ; M. Braverman ; W. K. Brooks ; S. Gilad ; K. P. Adhikari ; J. Arrington ; G. Asryan ; H. Avakian ; J. Ball ; N. A. Baltzell ; M. Battaglieri ; A. Beck ; S. May-Tal Beck ; I. Bedlinskiy ; W. Bertozzi ; A. Biselli ; V. D. Burkert ; T. Cao ; D. S. Carman ; A. Celentano ; S. Chandavar ; L. Colaneri ; P. L. Cole ; V. Crede ; A. D'Angelo ; R. De Vita ; A. Deur ; C. Djalali ; D. Doughty ; M. Dugger ; R. Dupre ; H. Egiyan ; A. El Alaoui ; L. El Fassi ; L. Elouadrhiri ; G. Fedotov ; S. Fegan ; T. Forest ; B. Garillon ; M. Garcon ; N. Gevorgyan ; Y. Ghandilyan ; G. P. Gilfoyle ; F. X. Girod ; J. T. Goetz ; R. W. Gothe ; K. A. Griffioen ; M. Guidal ; L. Guo ; K. Hafidi ; C. Hanretty ; M. Hattawy ; K. Hicks ; M. Holtrop ; C. E. Hyde ; Y. Ilieva ; D. G. Ireland ; B. I. Ishkanov ; E. L. Isupov ; H. Jiang ; H. S. Jo ; K. Joo ; D. Keller ; M. Khandaker ; A. Kim ; W. Kim ; F. J. Klein ; S. Koirala ; I. Korover ; S. E. Kuhn ; V. Kubarovsky ; P. Lenisa ; W. I. Levine ; K. Livingston ; M. Lowry ; H. Y. Lu ; I. J. MacGregor ; N. Markov ; M. Mayer ; B. McKinnon ; T. Mineeva ; V. Mokeev ; A. Movsisyan ; C. Munoz Camacho ; B. Mustapha ; P. Nadel-Turonski ; S. Niccolai ; G. Niculescu ; I. Niculescu ; M. Osipenko ; L. L. Pappalardo ; R. Paremuzyan ; K. Park ; E. Pasyuk ; W. Phelps ; S. Pisano ; O. Pogorelko ; J. W. Price ; S. Procureur ; Y. Prok ; D. Protopopescu ; A. J. Puckett ; D. Rimal ; M. Ripani ; B. G. Ritchie ; A. Rizzo ; G. Rosner ; P. Roy ; P. Rossi ; F. Sabatie ; D. Schott ; R. A. Schumacher ; Y. G. Sharabian ; G. D. Smith ; R. Shneor ; D. Sokhan ; S. S. Stepanyan ; S. Stepanyan ; P. Stoler ; S. Strauch ; V. Sytnik ; M. Taiuti ; S. Tkachenko ; M. Ungaro ; A. V. Vlassov ; E. Voutier ; N. K. Walford ; X. Wei ; M. H. Wood ; S. A. Wood ; N. Zachariou ; L. Zana ; Z. W. Zhao ; X. Zheng ; I. Zonta
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-10-18Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Articles: DFG German National LicensesDoyle, J. R. ; Doughty, D. A. ; Gallagher, Alan
[S.l.] : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have measured the initial silane and polysilane product yields from disilane decomposition in rf and dc discharges, at 25 and 250 °C and 20 Pa (0.15 Torr) pressure as typically used for a-Si:H film deposition. From analyses of these yields we conclude that the initial Si2H6 fragmentation pattern is SiH3+SiH2+H (91±9%) and H3SiSiH+2H (9±9%), that the primary product of the H+Si2H6 reaction is SiH4+SiH3, and that SiH3 is the dominant radical causing film growth. We have measured a radical-surface reaction probability of 0.34±0.03, very similar to that observed for SiH3 in SiH4 discharges. We report a spatial distribution of emission indicative of a γ-regime discharge. From deposition on glass fibers strung between the electrodes, we find that highly strained a-Si:H film is produced everywhere except on or near the electrodes, suggesting that energetic ion impact is necessary to yield useful films in disilane discharges.Type of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesDoyle, J. R. ; Doughty, D. A. ; Gallagher, A.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Time-dependent production of higher-silane gases and a-Si:H film are measured relative to decomposed silane in rf and dc, hot and cold cathode, static-gas discharges. From the absence of higher-silane production in very low silane partial-pressure discharges, it is inferred that most higher silanes are produced by gas-phase SiH2-initiated reactions. The higher silanes are thus tracers of SiH2, while the film production traces the fraction of H, SiH, and SiH3 in the initial decomposition. From the measured stable product yields, we deduce that SiH4→SiH2+2H is the dominant electron-collisional dissociation channel.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesDoyle, J. R. ; Doughty, D. A. ; Gallagher, Alan
[S.l.] : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A detailed kinetic study of silane-germane glow discharges is presented. Stable gas decomposition and production rates have been measured using mass spectrometry and a kinetic model for the plasma chemistry is developed. It is found that germane depletes about four times faster than silane, nearly independently of their relative fractions. Germane is found to be much more reactive than silane with silylene, germalyn, and atomic hydrogen, and the silylene-germane reaction leads in large part to film rather than stable gases. The spatial characteristics of the discharge are studied using optical emission and fiber deposition profiles. From these it is deduced that the present, low-power discharge operates in a "hybrid'' α-γ regime, and that ion effects are important near the electrodes.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesDoyle, J. R. ; Doughty, D. A. ; Gallagher, Alan
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The stable gas products of germane dissociation and subsequent radical reactions have been measured in pure germane glow discharges characteristics of the initial germane fragmentation are inferred from these data. The spatial distribution of discharge optical emission, and of film deposition on glass fibers, have also been measured. Finally, the surface reaction probability β of depositing neutral radicals has been measured to be 0.61±0.09 on the grounded electrode. Major differences between germane and silane discharges occur in all these observables. Possible explanations of these differences are given, but much less chemical data exists for germane, thereby precluding definitive judgments. A probable cause of the normally much poorer semiconductor quality of a-Ge:H films, compared to a-Si:H, is suggested. This is based on the thermodynamics of the H2 release reaction at the growing surface.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesStaff View
ISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: In order to judge the potential fluorescent lamp applications of various low-pressure positive column discharges it is necessary to measure the absolute power emitted in the ultraviolet region of the spectrum. For rare-gas discharges the principle emission occurs in the vacuum ultraviolet so that it is difficult to measure the radiant emittance (power per unit area) of the resonance radiation by standard methods. Two independent techniques are discussed for measuring the radiant emittance of positive column discharges in the vacuum ultraviolet. These techniques are used to study xenon positive column discharges at the resonance wavelength of 147 nm. The first method relies on the measurement of the resonance level density by absorption techniques. The effective decay rate of the resonance level is then determined by the simulation of resonance radiation transport. These two quantities are combined to yield the radiant emittance at 147 nm without implementing vacuum ultraviolet techniques. The second method uses a measurement of the resonance radiation normal to the positive column axis made with a calibrated vacuum ultraviolet detector. The angular distribution of the resonance radiation leaving the tube is determined by the simulation of resonance radiation transport. The detector measurement places the angular distribution of the radiance on an absolute scale, which can then be integrated to yield the radiant emittance. These two techniques are compared for pure xenon discharges at various pressures and currents. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A Monte Carlo simulation of radiation transport is used to determine the angular distribution of resonance radiation emanating from a positive column discharge. With the specification of the oscillator strength, absorption/emission profile, gas density, spatial distribution of radiating atoms, and boundary geometry, the angular distribution of photons arriving at the wall of the discharge is obtained. The ratio of the integral of the angular distribution to that for a diffuse, Lambertian surface is on the order of one-half for the parameter space studied here. When combined with a measurement of the absolute intensity at one angle, this distribution provides a means of determining the radiant emittance of the source when measurement of the actual distribution is problematic. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesRobinson, L. R. ; Fitzgerald, N. C. ; Doughty, D. G. ; Dawes, N. C. ; Berge, C. A. ; Bissett, D. L.
Oxford, UK : Blackwell Science Ltd
Published 2005Staff ViewISSN: 1468-2494Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: The palmitoyl pentapeptide palmitoyl-lysine-threonine-threonine-lysine-serine (pal-KTTKS) is a synthetic material that was designed as a topical agent to stimulate collagen production and thus provide a skin anti-wrinkle benefit. To determine if pal-KTTKS is effective, the clinical study reported here was conducted. Caucasian female subjects (n = 93, aged 35–55) participated in a 12-week, double-blind, placebo-controlled, split-face, left–right randomized clinical study assessing two topical products: moisturizer control product vs. the same moisturizer product containing 3 ppm pal-KTTKS. Pal-KTTKS was well tolerated by the skin and provided significant improvement vs. placebo control for reduction in wrinkles/fine lines by both quantitative technical and expert grader image analysis. In self-assessments, subjects also reported significant fine line/wrinkle improvements and noted directional effects for other facial improvement parameters.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Film growth on glass fibers (40 μm diameter) is used to probe the distribution of SiH4 decomposition products that produce a-Si:H films in silane rf glow discharges. The film thickness on fibers spanning the electrodes is measured versus position to map the spatial variation of the film-precursor (radical) density. The optical emission from the discharge, which is shown to be essentially equivalent to the distributed source of SiH4 decomposition products, is compared to the density maps. This comparison shows that the SiH3 radical dominates deposition, that this SiH3 is produced in the optically bright regions of the discharge, and that H atoms react rapidly with SiH4 before diffusing significant distances in the discharge. The perturbative nature of the probes on the discharge environment is also addressed.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesDoughty, D. A. ; Doyle, J. R. ; Lin, G. H. ; Gallagher, A.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: