Search Results - (Author, Cooperation:D. Dai)
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1Latest Papers from Table of Contents or Articles in PressC. Xiao ; X. Xu ; S. Liu ; T. Wang ; W. Dong ; T. Yang ; Z. Sun ; D. Dai ; D. H. Zhang ; X. Yang
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-07-23Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressWang, M., Zhu, D., Dai, J., Zhong, Z., Zhang, Y., Wang, J.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-05-02Publisher: The American Society for Microbiology (ASM)Print ISSN: 0099-2240Electronic ISSN: 1098-5336Topics: BiologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressT. Wang ; J. Chen ; T. Yang ; C. Xiao ; Z. Sun ; L. Huang ; D. Dai ; X. Yang ; D. H. Zhang
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-12-21Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressT. Yang ; J. Chen ; L. Huang ; T. Wang ; C. Xiao ; Z. Sun ; D. Dai ; X. Yang ; D. H. Zhang
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-01-03Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-01-09Publisher: Wiley-BlackwellPrint ISSN: 0094-8276Electronic ISSN: 1944-8007Topics: GeosciencesPhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressDai, D., Luan, S., Chen, X., Wang, Q., Feng, Y., Zhu, C., Qi, W., Song, R.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-02-28Publisher: Genetics Society of America (GSA)Print ISSN: 0016-6731Topics: BiologyPublished by: -
7Latest Papers from Table of Contents or Articles in PressK.-W. Chen, N. Aryal, J. Dai, D. Graf, S. Zhang, S. Das, P. Le Fèvre, F. Bertran, R. Yukawa, K. Horiba, H. Kumigashira, E. Frantzeskakis, F. Fortuna, L. Balicas, A. F. Santander-Syro, E. Manousakis, and R. E. Baumbach
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-04-10Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Electronic structure and strongly correlated systemsPublished by: -
8Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-02-12Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
9Articles: DFG German National LicensesLee, Z. Y. ; Miao, X. S. ; Wang, C. G. ; Hu, Y. S. ; Zhu, P. ; Lin, G. Q. ; Wan, D. F. ; Dai, D. W.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Amorphous LRE-TM SmCo perpendicular magnetic film provides a promising candidate for perpendicular magnetic recording media.1 In order to improve the magneto-optical properties of SmCo films, we have studied the ternary system: Smy(Co100−xDyx)100−y films which were prepared by rf magnetron sputtering system. Because the Dy moment is antiferromagnetically coupled to the Co moment and Dy has a larger magnetic anisotropy, Dy addition will increase Ku and decrease Ms of LRE-TM films. With the Dy addition content increased from 0 to 10 at. %, the perpendicular anisotropy constant K⊥ (K⊥ = Ku(K⊥=Ku− 2πM2s) increased to improve the magneto-optical properties of SmCo films. The torque curve measurement and Kerr hysteresis loop of SmCoDy film had proved it was perpendicular magnetic film. In order to prevent RE metal selective oxidation of SmCoDy films, a protective layer AlN was used. AlN films were prepared by rf reactive sputtering.2 The temperature dependence of AlN/SmCoDy/glass were studied. Hc decreased rapidly when temperature increased while its Kerr angle decreased slightly. When the sample was cooled to room temperature, Hc and θk returned to its original value. The results show SmCoDy films may become new material of magneto-optical recording media. The long-term stability and microstructure of SmCoDy films have also been studied.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesLi, J. H. ; Peng, C. S. ; Mai, Z. H. ; Zhou, J. M. ; Huang, Q. ; Dai, D. Y.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesDai, D. G. ; Cheng, W. ; Balasubramanian, K.
College Park, Md. : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: We compute the bending potential energy surfaces of 12 electronic states of TaH2 and TaH+2 using the complete active space multiconfiguration self-consistent field (CAS-MCSCF) followed by multireference singles+doubles configuration interaction (MRSDCI) calculations. Spin–orbit effects are also included using the relativistic configuration interaction (RCI) approach. We find that the 4F ground state of Ta atom requires a barrier of ∼24 kcal/mol for insertion into H2 while the 5F ground state of Ta+ does not insert into H2. The low-spin excited states of Ta and Ta+ are considerably more reactive with H2. We find three nearly-degenerate bent electronic states of 4B1, 4A2, and 4B2 symmetries as the candidates for the ground state of TaH2. Likewise 3B1 and 3A1 electronic states of TaH+2 are nearly-degenerate candidates for the ground state. The spin–orbit coupling strongly mixes some of these states leading to bond angle changes of up to 10°.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesFletcher, D. A. ; Dai, D. ; Steimle, T. C. ; Balasubramanian, K.
College Park, Md. : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: A high resolution optical Stark study of a niobium nitride (NbN) supersonic molecular beam sample has been performed. The F'=2.5–F‘=3.5 hyperfine component of the R(1) branch feature of the (0,0) B 3F2–X 3D1 subband system was recorded as a function of static electric field strengths up to 2.7 kV/cm. The permanent electric dipole moment of 3.26(6) D and 4.42(9) D for the X 3D1 and B 3F2 states, respectively. The properties of the X 3D1 state were calculated ab initio using a complete active space multiconfiguration self-consistent-field approach followed by first-order configuration interactions plus multireference singles+doubles configuration interaction treatment. The calculated dipole moment for the X 3D1 state at the experimentally determined equilibrium bond distance is 3.65 D.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesZhao, J. H. ; Liu, R. P. ; Zhang, M. ; Zhou, Z. H. ; Zhang, X. Y. ; Cao, L. M. ; Dai, D. Y. ; Xu, Y. F. ; Wang, W. K.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: A new method for investigation of diffusion processes in liquid metals with solid/liquid–liquid/solid trilayer systems is described. The design of this kind of trilayers enables diffusion processes with no effects from gravity-induced convection and Maragoni-convection conditions. The Ta/Zn–Sn/Si trilayers were prepared and the interdiffusion of liquid zinc and tin at 500 °C was investigated. The interdiffusion coefficients range from 1.0×10−4 to 2.8×10−4 mm2/s, which are less than previous values measured by capillary reservoir technique under 1 g environment where various kinds of convection exist. It is the removing of disturbances of these kinds of convection that brings about the precise interdiffusion coefficients in liquid metals. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesCox, U. J. ; Crain, J. ; Hatton, P. D. ; Green, G. S. ; Dai, D. Y.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: High-resolution triple-crystal x-ray scattering techniques have been used to study high-temperature superconducting thin films of Gd-Ba-Cu-O grown in situ by dc magnetron sputtering onto substrates of (001) LaAlO3 and SrTiO3. The measurements suggest that the thin films are single crystal. Evidence is found for both c- and a-axis-oriented films on the LaAlO3 samples. In particular, no strain is observed in the films except at the interface between films of different relative orientation. No low-temperature structural transitions are observed in the films.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesLi, M. ; Ma, X. D. ; Peng, C. B. ; Zhao, J. G. ; Mei, L. M. ; Liu, Y. H. ; Gu, Y. S. ; Chai, W. P. ; Mai, Z. H. ; Shen, B. G. ; Dai, D. S.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The magnetic properties of [Fe(20 A(ring))/Pd(x A(ring))]25 multilayers prepared by ultrahigh vacuum electron-beam evaporation are presented. It is found that the crystal structure of Fe layers change from bcc to fcc when the thickness of Pd layers dPd≥36 A(ring). The saturation magnetization per unit Fe volume at 5 K is enhanced and oscillates with the increment of the thickness of Pd layers, due to the polarization of Pd atoms. The magnetic hysteresis loops of samples indicate low coercive forces, and ferromagnetic coupling between the Fe layers for all Pd thicknesses (6–60 A(ring)). The conversion electron Mössbauer spectra measurements proved that the magnetic moment of fcc Fe is the same as that of the bcc Fe. It is also found that the magnetic anisotropy dependence on dPd is similar to that of the saturation magnetization, and relates to the Fe layer structure transition. The Curie temperature of Fe/Pd multilayers decreases monotonously with the increasing of dPd. The low temperature magnetization measurement of Fe/Pd multilayers suggests that the interlayer coupling between Fe layers and polarization of Pd layers influences the temperature dependence of saturation magnetization. No evidence of antiferromagnetic coupling between Fe layers and giant magnetoresistance effect is found. The relationship among structure, polarization of Pd layers, and magnetic coupling is discussed. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesLuo, L. ; Chen, L. ; Qiu, Z. R. ; Yu, X. Y. ; Dai, D. C. ; Zhou, J. Y.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The resonant nonlinear refraction in rare-earth-doped solids is studied with femtosecond degenerate pump-probe two-beam coupling spectroscopy. The phase modulation induced by the pump pulses is shown to result in a significant contribution to the differential change of the probe transmission. An ultrafast resonant nonlinear refractive index of the order of 1×10−18 m2/W is measured in Nd:YVO4 crystals. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesPeng, C. S. ; Zhao, Z. Y. ; Chen, H. ; Li, J. H. ; Li, Y. K. ; Guo, L. W. ; Dai, D. Y. ; Huang, Q. ; Zhou, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Relaxed GexSi1−x epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature GeySi1−y buffers. We show that even if the Ge fraction rises up to 90%, the threading dislocation density can be kept lower than 5×106 cm−2 in the top layers, while the total thickness of the structure is no more than 1.7 μm. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesRelaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation densityLi, J. H. ; Peng, C. S. ; Wu, Y. ; Dai, D. Y. ; Zhou, J. M. ; Mai, Z. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Si0.7Ge0.3 epilayers with low threading dislocation density have been grown on Si (001) substrates by introducing a low temperature Si buffer. Such a structure can be used as the buffer for the growth of device structures. In comparison with the conventional compositionally graded buffer system, it has the advantages of having lower threading dislocation density, smaller thickness for required degree of relaxation, and smoother surface. Experimental evidence suggests that an anomalous relaxation mechanism has been involved.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesWang, Wei Hua ; Wang, R. J. ; Dai, D. Y. ; Zhao, D. Q. ; Pan, M. X. ; Yao, Y. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesWang, Li Min ; Wang, W. H. ; Wang, R. J. ; Zhan, Z. J. ; Dai, D. Y. ; Sun, L. L. ; Wang, W. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Acoustic velocities of Pd39Ni10Cu30P21 bulk metallic glass (BMG) are measured by an ultrasonic technique upon annealing. The elastic constants and the Debye temperature are obtained. A large softening of the transverse phonon is exhibited in the as-quenched BMG relative to its crystallized state. Upon crystallization, the shear modulus and the Debye temperature increase by ∼30% and ∼12%, respectively; however, the density increases by only ∼0.6%. Some anomalous acoustic and elastic behaviors are observed near the glass transition temperature and in the supercooled liquid region of the BMG. The anomalies are explained with regard to the structural changes. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: