Search Results - (Author, Cooperation:C. Yeh)
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1Latest Papers from Table of Contents or Articles in PressChang, C.-C., Sung, W.-W., Hsu, H.-T., Yeh, C.-M., Lee, C.-H., Chen, Y.-L., Liu, T.-C., Yeh, K.-T.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-06-23Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, PathologyPublished by: -
2Latest Papers from Table of Contents or Articles in PressA. Ernst ; G. Avvakumov ; J. Tong ; Y. Fan ; Y. Zhao ; P. Alberts ; A. Persaud ; J. R. Walker ; A. M. Neculai ; D. Neculai ; A. Vorobyov ; P. Garg ; L. Beatty ; P. K. Chan ; Y. C. Juang ; M. C. Landry ; C. Yeh ; E. Zeqiraj ; K. Karamboulas ; A. Allali-Hassani ; M. Vedadi ; M. Tyers ; J. Moffat ; F. Sicheri ; L. Pelletier ; D. Durocher ; B. Raught ; D. Rotin ; J. Yang ; M. F. Moran ; S. Dhe-Paganon ; S. S. Sidhu
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-01-05Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; *Combinatorial Chemistry Techniques ; Conserved Sequence ; Drug Design ; Endopeptidases/chemistry/*metabolism ; HEK293 Cells ; Humans ; Molecular Sequence Data ; Protease Inhibitors/chemistry/*isolation & purification/pharmacology ; Protein Conformation ; Protein Structure, Secondary ; Small Molecule Libraries ; Ubiquitin/chemistry/genetics/*metabolism ; Ubiquitin Thiolesterase/chemistry/*metabolism ; Ubiquitin-Conjugating Enzymes/chemistry/metabolism ; Ubiquitin-Protein Ligases/chemistry/metabolism ; Ubiquitination/*drug effectsPublished by: -
3Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-02-22Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, EpidemiologyPublished by: -
4Latest Papers from Table of Contents or Articles in PressLiang, Z., Gupta, S. K., Yeh, C.-T., Zhang, Y., Ngu, D. W., Kumar, R., Patil, H. T., Mungra, K. D., Yadav, D. V., Rathore, A., Srivastava, R. K., Gupta, R., Yang, J., Varshney, R. K., Schnable, P. S., Schnable, J. C.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-07-03Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
5Latest Papers from Table of Contents or Articles in PressYang, J., Yeh, C.-T. E., Ramamurthy, R. K., Qi, X., Fernando, R. L., Dekkers, J. C. M., Garrick, D. J., Nettleton, D., Schnable, P. S.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-11-07Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
6Articles: DFG German National LicensesYuan, J. S. ; Yeh, C. S. ; Gadepally, B.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Modeling the cutoff frequency (fT) of the advanced bipolar transistors at avalanche breakdown has been developed. The analytical equations developed account for temperature and impact ionization effects on fT and high-current effects at the collector-base junction. Process sensitivity of the collector charging time at the avalanche breakdown regime has been examined. The experimental data reported in the literature are compared in support of the model. Good agreement between the model prediction and measurement is obtained.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesWilley, K. F. ; Cheng, P. Y. ; Yeh, C. S. ; Robbins, D. L. ; Duncan, M. A.
College Park, Md. : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: Vibrationally resolved electronic spectra are reported for the metal dimer-rare gas complexes Ag2–Ar and Ag2–Kr. These spectra are obtained using resonant two-photon photoionization in the energy region near the Ag2 B←X electronic transition (280–285 nm). Both complexes exhibit extensive activity in three vibrational modes, making it possible to determine vibrational constants, anharmonicities, and cross-mode couplings. An unusual cancellation of factors results in the Kr complex (ω'e =72.6 cm−1) having nearly the same metal-rare gas stretching frequency as the Ar complex (ωe=73.9 cm−1). Progressions extending over a significant range of the excited state potential surfaces make it possible to derive the excited state dissociation energies (D'0=755 and 1205 cm−1 for Ar and Kr, respectively). Combination with the red-shifted electronic state origins yields the corresponding ground state dissociation energies (D(large-closed-square)0=275 and 394 cm−1 for Ar and Kr, respectively). Potential energy surfaces are investigated for excited and ground states of both complexes.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesWilley, K. F. ; Yeh, C. S. ; Robbins, D. L. ; Pilgrim, J. S. ; Duncan, M. A.
College Park, Md. : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: Mg+–H2O ion–molecule complexes are produced in a pulsed supersonic nozzle cluster source. These complexes are mass selected and studied with laser photodissociation spectroscopy in a reflectron time-of-flight mass spectrometer system. An electronic transition assigned as 2B2←X 2A1 is observed with an origin at 28 396 cm−1. The spectrum has a prominent progression in the metal-H2O stretching mode with a frequency (ω'e) of 518.0 cm−1. An extrapolation of this progression fixes the excited state dissociation energy (D'0) at 15 787 cm−1. The corresponding ground state value (D‘0) is 8514 cm−1 (24.3 kcal/mol). The solvated bending mode, and symmetric and asymmetric stretching modes of water are also active in the complex, as are the magnesium bending modes. A second electronic transition assigned as 2B1←X 2A1 is observed with an origin at 30 267 cm−1 and a metal stretch frequency for Mg+–H2O of 488.5 cm−1 (ΔG1/2). Spectra of both excited states are also observed for Mg+–D2O. Partially resolved rotational structure is analyzed for both isotopes, leading to the conclusion that the complex has a structure with C2v symmetry. This study was guided by ab initio calculations by Bauschlicher and co-workers, which provide accurate predictions of the electronic transition energies, vibrational constants, and dissociation energies.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A fundamentally new method for light coupling in quantum well infrared photodetectors that provides a ten-fold improvement over an optimized grating coupler is presented. It is based on the prism-film coupler concept developed earlier for selective mode coupling into integrated optical circuits. In this article this concept is specifically used to turn the incident electric field from one that is polarized parallel to the quantum well layer to one that is mostly perpendicular to the layer, thereby increasing dramatically the sensitivity of the quantum well infrared photodetector. Detailed sample design and its computer simulation results are given and discussed. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesYeh, C. S. ; Willey, K. F. ; Robbins, D. L. ; Pilgrim, J. S. ; Duncan, M. A.
College Park, Md. : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: Mg+–CO2 ion–molecule cluster complexes are produced by laser vaporization in a pulsed nozzle cluster source. The vibronic spectroscopy in these complexes is studied with mass-selected photodissociation spectroscopy in a reflectron time-of-flight mass spectrometer. Two excited electronic states are observed (2) 2Σ+ and 2Π. The 2Π state has a vibrational progression in the metal–CO2 stretching mode (ωe'=381.8 cm−1). The complexes are linear (Mg+–OCO) and are bound by the charge–quadrupole interaction. The dissociation energy (D0‘) is 14.7 kcal/mol. Corresponding spectra are measured for each of the 24, 25, and 26 isotopes of magnesium. These results are compared to theoretical predictions made by Bauschlicher and co-workers.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1089-7658Source: AIP Digital ArchiveTopics: MathematicsPhysicsType of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: In a wavelength division multiplexed fiber system, where pulses on different wavelength beams may copropagate in a single mode fiber, the cross-phase-modulation (CPM) effects caused by the nonlinearity of the optical fiber are unavoidable. In other words, pulses on different wavelength beams can interact with and affect each other through the intensity dependence of the refractive index of the fiber. Although CPM will not cause energy to be exchanged among the beams, the pulse shapes and locations on these beams can be altered significantly. This phenomenon makes possible the manipulation and control of pulses copropagating on different wavelength beams through the introduction of a shepherd pulse at a separate wavelength. How this can be accomplished is demonstrated in this paper. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesYeh, C. N. ; McNeil, L. E. ; Daniels-Race, T. ; Blue, L. J.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: GaAs/In0.07Al0.93As tensile-strained quantum wells were grown on [001] GaAs substrates using molecular-beam epitaxy. The incorporation of tensile strain is made possible by preparing a 1-μm-thick In0.07Al0.93As relaxed buffer which is followed by the growth of quantum wells. The strain of the GaAs was measured using Raman spectroscopy and photoluminescence. The photoluminescence measurements from wells ranging in thickness from 25 to 100 A(ring) reveal that the observed optical transition originates from the electron–light hole recombination for a 100 A(ring) well and from the electron–heavy hole recombination if the well thickness is less than 40 A(ring). Therefore, a thick Al-rich InxAl1−xAs relaxed buffer on the GaAs substrate can be used to engineer the relative energy position of the light and heavy holes for GaAs-based quantum wells. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesPark, Moon-Ho ; Yeh, C. L. ; Wang, L. C. ; Deng, F. ; Liu, Q. Z. ; Clawson, A. R. ; Lau, S. S.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Single-element contacts, Pd or Ni, on various p-InP substrates grown by liquid-encapsulation Czochralski (LEC) and by metal-organic chemical vapor deposition were investigated. Pd or Ni contacts on the substrates supplied by one certain manufacturer were found to be ohmic with a minimum contact resistivity of ∼5×10−5 Ω cm2 after annealing between 420 and 500 °C. However, ohmic behavior was not observed for these contacts on other substrates. Hall measurement, double-crystal x-ray diffractometry, and photoluminescence technique were used to evaluate the substrates. It was speculated that existence of intrinsic defects, such as P vacancies and other possible defects, in p-InP grown by LEC method may be responsible for the observed difference in ohmic behavior. A defect-assisted tunneling mechanism is proposed to account for the observed ohmic behavior of single-element contacts on certain p-InP substrates. This approach is potentially useful for making ohmic contacts to other compound semiconductors. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesYeh, C. N. ; McNeil, L. E. ; Blue, L. J. ; Daniels-Race, T.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: An iterative procedure which utilizes the type-I and type-II transitions of a GaAs/AlAs single quantum well is used to determine the GaAs/AlAs valence-band offset. The iteration is based on the fact that the confinement energy is not sensitive to the change of the barrier potential. It has the advantage that knowledge of the thickness of the quantum well is not necessary to determine the valence-band offset. Both the type-I and type-II transitions can be observed in the low-temperature photoluminescence spectrum if the GaAs is thin enough so that the lowest-energy level of the electron in the GaAs well is higher than the X-conduction-band minimum of the adjacent AlAs. We illustrate this procedure with a 35 A(ring) GaAs/AlAs single quantum well, and the valence-band offset is found to be 36% of the Γ-gap difference. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesYeh, C. ; Shimabukuro, F. I. ; Chu, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: By using high dielectric constant and low-loss dielectric material such as quartz, alumina, or sapphire and by specifically configuring the waveguide structure, we have succeeded in designing a waveguide for the millimeter/submillimeter wavelength range which yields an attenuation constant for the dominant mode that is more than 100 times below that for an equivalent circular dielectric rod with identical cross-sectional area. This waveguide takes the form of a thin dielectric ribbon surrounded by lossless dry air and possesses an attenuation constant as low as 20 dB/km. Analytical results on the attenuation constant and field extent of the dominant mode on this ribbon structure for several promising materials are given. Experiments have also been performed on ribbon guides made with rexolite. Excellent agreement was found between predicted and measured results.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: An improved numerical model for computing the displacement defect density, the damage constants for the minority-carrier diffusion lengths and the degradations of the short-circuit current Isc, open-circuit voltage Voc, and the conversion efficiency ηc in a proton irradiated (AlGa)As-GaAs solar cell is presented in this paper. The model assumed that the radiation-induced displacement defects form effective recombination centers which reduces the minority-carrier diffusion length and hence degrades the Isc, Voc, and ηc of the solar cell. Excellent agreement was obtained between our calculated values and the measured Isc, Voc, and ηc in the proton irradiated GaAs solar cells for proton energies varying from 100 keV to 10 MeV and fluences from 1010 to 1012 cm−2 under normal incidence condition.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesWu, S. C. ; Yeh, C. Y. ; Chen, F. H. ; Tseng, T. Y. ; Wang, C. ; Chang, H. L. ; Wang, H. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High Tc Tl–Ba–Ca–Cu–O superconducting thin films have been made by the dc magnetron sputtering followed by postannealing. In this study, a Tl-based microstrip ring resonator was fabricated by using standard microelectronic photolithographic patterning and wet chemical etching. Experimental results indicated that these ring resonators exhibit the best unloaded Q of 3269 at its resonant frequency of 3.35 GHz and some other samples display the double resonant behavior at 77 K. The frequency difference of the double resonant peaks depends on the input microwave power, and the splitting is ascribed to spatial variations in the film microstructure. The physical properties of the films are about 1 μm thick, as high as 105 K transition temperature, and greater than 105 A/cm2 current density at zero magnetic field and 77 K. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesYeh, C. C. ; Hsu, Klaus Y. J. ; Samanta, L. K. ; Chen, P. C. ; Hwang, H. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p-n junction, which makes the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct photoconductivity and photovoltaic effects have been clearly revealed from the I-V curves.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesGwo, S. ; Yeh, C.-L. ; Chen, P.-F. ; Chou, Y.-C. ; Chen, T. T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: