Search Results - (Author, Cooperation:C. Y. Liu)
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1Helminth infection reactivates latent gamma-herpesvirus via cytokine competition at a viral promoterT. A. Reese ; B. S. Wakeman ; H. S. Choi ; M. M. Hufford ; S. C. Huang ; X. Zhang ; M. D. Buck ; A. Jezewski ; A. Kambal ; C. Y. Liu ; G. Goel ; P. J. Murray ; R. J. Xavier ; M. H. Kaplan ; R. Renne ; S. H. Speck ; M. N. Artyomov ; E. J. Pearce ; H. W. Virgin
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-06-28Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Gammaherpesvirinae/genetics/*physiology ; Gene Expression Regulation, Viral ; Herpesvirus 8, Human/genetics/*physiology ; Humans ; Interferon-gamma/*immunology/pharmacology ; Interleukin-4/*metabolism/pharmacology ; Macrophages/immunology ; Mice ; Mice, Inbred C57BL ; Nematospiroides dubius/immunology ; Ovum/immunology ; Promoter Regions, Genetic ; STAT6 Transcription Factor/*metabolism ; Schistosoma mansoni/*immunology ; Schistosomiasis mansoni/*immunology ; Strongylida Infections/immunology ; Virus Activation/drug effects/genetics/*physiology ; Virus Latency/physiology ; Virus Replication/physiologyPublished by: -
2Z. Tang, M. Blatnik, L. J. Broussard, J. H. Choi, S. M. Clayton, C. Cude-Woods, S. Currie, D. E. Fellers, E. M. Fries, P. Geltenbort, F. Gonzalez, K. P. Hickerson, T. M. Ito, C.-Y. Liu, S. W. T. Mac; Donald, M. Makela, C. L. Morris, C. M. O’Shaughnessy, R. W. Pattie, Jr., B. Plaster, D. J. Salvat, A. Saunders, Z. Wang, A. R. Young, and B. A. Zeck
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-07-12Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Nuclear PhysicsPublished by: -
3Staff View
Publication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
4Staff View
Publication Date: 2018-03-06Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
5Staff View
Publication Date: 2018-08-31Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
6Cheung, K.-W., Wu, T., Ho, S. F., Wong, Y. C., Liu, L., Wang, H., Chen, Z.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-03-29Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
7X L Yin, S X Yuan, Y C Liu, C P Huang, X C Liu, J Wang and G Q Huang
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
8Justin Y. Chen, Miloni Parekh, Hadear Seliman, Dariya Bakshinskaya, Wei Dai, Kelvin Kwan, Kuang Yu Chen, Alice Y. C. Liu
The American Society for Biochemistry and Molecular Biology (ASBMB)
Published 2018Staff ViewPublication Date: 2018-10-06Publisher: The American Society for Biochemistry and Molecular Biology (ASBMB)Print ISSN: 0021-9258Electronic ISSN: 1083-351XTopics: BiologyChemistry and PharmacologyPublished by: -
9Staff View
Publication Date: 2018-08-31Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
10Hsu, P.-Y., Wu, V. S., Kanaya, N., Petrossian, K., Hsu, H.-K., Nguyen, D., Schmolze, D., Kai, M., Liu, C.-Y., Lu, H., Chu, P., Vito, C. A., Kruper, L., Mortimer, J., Chen, S.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-01-17Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
11Lin, J.-L., Sung, K.-T., Su, C.-H., Chou, T.-H., Lo, C.-I., Tsai, J.-P., Chang, S.-C., Lai, Y.-H., Hu, K.-C., Liu, C.-Y., Yun, C.-H., Hung, C.-L., Yeh, H.-I., Lam, C. S. P.
American Heart Association (AHA)
Published 2018Staff ViewPublication Date: 2018-05-13Publisher: American Heart Association (AHA)Print ISSN: 1941-9651Electronic ISSN: 1942-0080Topics: MedicineKeywords: Biomarkers, Contractile Function, Cardiovascular Disease, Diabetes, Type 2, EchocardiographyPublished by: -
12Pattie, R. W., Callahan, N. B., Cude-Woods, C., Adamek, E. R., Broussard, L. J., Clayton, S. M., Currie, S. A., Dees, E. B., Ding, X., Engel, E. M., Fellers, D. E., Fox, W., Geltenbort, P., Hickerson, K. P., Hoffbauer, M. A., Holley, A. T., Komives, A., Liu, C.- Y., Mac; Donald, S. W. T., Makela, M., Morris, C. L., Ortiz, J. D., Ramsey, J., Salvat, D. J., Saunders, A., Seestrom, S. J., Sharapov, E. I., Sjue, S. K., Tang, Z., Vanderwerp, J., Vogelaar, B., Walstrom, P. L., Wang, Z., Wei, W., Weaver, H. L., Wexler, J. W., Womack, T. L., Young, A. R., Zeck, B. A.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-05-11Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: PhysicsPublished by: -
13Huynh, Q. T. ; Liu, C. Y. ; Chen, Chih ; Tu, K. N.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have prepared eutectic SnPb solder lines for electromigration study by a process of solder reflow into V-grooves etched on (001) Si wafer surfaces. They are thick lines and are highly reproducible. We report here results of lines of 100 μm in width and 150 to 800 μm in length, stressed by a current density of 2.8×104 A/cm2 at 150 °C in ambient. The accumulation of a large lump of solder, rather than hillocks of Sn and Pb, was observed at the anode, and depletions and voids were observed at the cathode. By measuring the volume of the lump, we have calculated the average effective charge number of electromigration in the eutectic solder to be 33, which is close to the reported value of 47 for self-electromigration in bulk Pb. Using x-ray dispersive analysis, we found that Pb is the dominant diffusing species. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Using thin film solder strips, we have investigated the electromigration of six different compositions of Sn–Pb solders at current density of 105 A/cm2 near ambient temperature. The six compositions are pure Sn, Sn80Pb20, Sn70Pb30, Sn62Pb38 (eutectic), Sn40Pb60, and Sn5Pb95. The eutectic alloy, with the lowest melting point and a high density of lamella interfaces, was found to have the fastest hillock growth. As composition moving toward the two terminal phases, the hillock growth rate decreases; but it increases again in pure Sn. The interface between Sn and Pb, being the fastest kinetic path of mass transport, also serves as the place to initiate hillock and void formation. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The wetting reaction between molten eutectic SnPb solder and a sputtered trilayer Cu/Ni(V)/Al thin film metallization was studied using cross-sectional transmission electron microscopy and scanning electron microscopy. Reaction temperatures were from 200 to 240 °C and reaction times ranged from 1 to 40 min. The initial reaction products were Cu6Sn5 and Cu3Sn. The latter transforms to the former after an annealing greater than 1 min at 220 °C. The Cu6Sn5 grains adhere well to the Ni(V) surface and no spalling of them was observed, even after 40 min at 220 °C. This surprising result indicates that the Cu/Ni(V)/Al or Cu6Sn5/Ni(V)/Al is a stable thin film metallization for low temperature eutectic SnPb solder direct chip attachment to organic substrates. Additionally, Kirkendall voids accompanied Cu3Sn formation, yet the voids disappear when the Cu3Sn transforms to Cu6Sn5. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Liu, C. Y. ; Chen, Chih ; Mal, A. K. ; Tu, K. N.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We tested flip chip solder bonded Si samples under tensile and shear loading as a function of annealing time at 200 °C. The solder bump was eutectic SnPb and the underbump thin film metallization was Cu/Cr deposited on oxidized Si. We found that the failure mode is interfacial fracture and the fracture strength decreases rapidly with annealing time. From scanning electric microscope observations, the fracture occurs at the Cu–Sn/Cr interface. We conclude that it is the metallurgical reaction that has brought the solder into direct contact with the Cr surface. The weak joint is due to the spalling of Cu–Sn compound grains from the Cr surface, especially near the edges and corners of the joint. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Staff View
ISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: The principle of the twin-wire resistance probe rotameter is developed in this article. The main feature of the design is a low-cost flowmeter with an electrical output capability. From performance tests conducted on both a simulated rotameter and an actual rotameter constructed based on the principle described, good agreement was observed between experimental and analytical results. It was found that the output voltage from this flowmeter depends mainly upon the material and the size of the float used, and the angle of the taper of the surface of the meter.Type of Medium: Electronic ResourceURL: -
18Liu, C. Y. ; Kim, H. K. ; Tu, K. N. ; Totta, P. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: On Au/Cu/Cr thin film surface, a drop of molten Sn first spreads out to wet the surface, but it then pulls back to dewet. The latter is due to the spalling of Cu–Sn compounds and exposing the Cr surface to the molten Sn when all of the Cu film has been consumed by the wetting reaction. Dewetting is clearly undesirable for solder joints in electronic packaging; the phenomenon is presented here. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Liu, C. Y. ; Chen, Chih ; Liao, C. N. ; Tu, K. N.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Room-temperature electromigration occurs in a thin stripe of eutectic SnPb solder stressed by a current density of 105 amp/cm2. Hillocks and voids grow at the anode and the cathode, respectively. While the dominant diffusion species is Sn in this two-phase alloy, the growth of the hillocks, surprisingly, originates from the Pb grains. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Liu, C. Y. ; Datta, A. ; Wang, Y. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A combined process of electropolishing, focused-ion-beam lithography, and controlled anodization is used to fabricate anodic alumina films with ordered nanochannels. The ion beam is used to create a hexagonally close-packed lattice of concaves on a polished aluminum surface and the concaves act as pinning points for guiding the growth of nanochannels in the following anodization step. By carefully matching the lattice constant (100 nm) with the anodization voltage, ordered nanochannels with aspect ratio of ∼100 are fabricated. The effects of the ion dose and its corresponding depth of the concaves on the ordering of the nanochannel array are investigated and a minimum depth of 3 nm is found to be necessary for effective guidance of the growth of ordered nanochannels. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: