Search Results - (Author, Cooperation:C. Ferrari)

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  1. 1
    Staff View
    Publication Date:
    2018-02-22
    Publisher:
    Institute of Physics Publishing (IOP)
    Electronic ISSN:
    1748-0221
    Topics:
    Physics
    Published by:
    http://www.iop.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    The Brainstorm Consortium, Anttila, V., Bulik-Sullivan, B., Finucane, H. K., Walters, R. K., Bras, J., Duncan, L., Escott-Price, V., Falcone, G. J., Gormley, P., Malik, R., Patsopoulos, N. A., Ripke, S., Wei, Z., Yu, D., Lee, P. H., Turley, P., Grenier-Boley, B., Chouraki, V., Kamatani, Y., Berr, C., Letenneur, L., Hannequin, D., Amouyel, P., Boland, A., Deleuze, J.-F., Duron, E., Vardarajan, B. N., Reitz, C., Goate, A. M., Huentelman, M. J., Kamboh, M. I., Larson, E. B., Rogaeva, E., St George-Hyslop, P., Hakonarson, H., Kukull, W. A., Farrer, L. A., Barnes, L. L., Beach, T. G., Demirci, F. Y., Head, E., Hulette, C. M., Jicha, G. A., Kauwe, J. S. K., Kaye, J. A., Leverenz, J. B., Levey, A. I., Lieberman, A. P., Pankratz, V. S., Poon, W. W., Quinn, J. F., Saykin, A. J., Schneider, L. S., Smith, A. G., Sonnen, J. A., Stern, R. A., Van Deerlin, V. M., Van Eldik, L. J., Harold, D., Russo, G., Rubinsztein, D. C., Bayer, A., Tsolaki, M., Proitsi, P., Fox, N. C., Hampel, H., Owen, M. J., Mead, S., Passmore, P., Morgan, K., Nöthen, M. M., Rossor, M., Lupton, M. K., Hoffmann, P., Kornhuber, J., Lawlor, B., McQuillin, A., Al-Chalabi, A., Bis, J. C., Ruiz, A., Boada, M., Seshadri, S., Beiser, A., Rice, K., van der Lee, S. J., De Jager, P. L., Geschwind, D. H., Riemenschneider, M., Riedel-Heller, S., Rotter, J. I., Ransmayr, G., Hyman, B. T., Cruchaga, C., Alegret, M., Winsvold, B., Palta, P., Farh, K.-H., Cuenca-Leon, E., Furlotte, N., Kurth, T., Ligthart, L., Terwindt, G. M., Freilinger, T., Ran, C., Gordon, S. D., Borck, G., Adams, H. H. H., Lehtimäki, T., Wedenoja, J., Buring, J. E., Schürks, M., Hrafnsdottir, M., Hottenga, J.-J., Penninx, B., Artto, V., Kaunisto, M., Vepsäläinen, S., Martin, N. G., Montgomery, G. W., Kurki, M. I., Hämäläinen, E., Huang, H., Huang, J., Sandor, C., Webber, C., Muller-Myhsok, B., Schreiber, S., Salomaa, V., Loehrer, E., Göbel, H., Macaya, A., Pozo-Rosich, P., Hansen, T., Werge, T., Kaprio, J., Metspalu, A., Kubisch, C., Ferrari, M. D., Belin, A. C., van den Maagdenberg, A. M. J. M., Zwart, J.-A., Boomsma, D., Eriksson, N., Olesen, J., Chasman, D. I., Nyholt, D. R., Avbersek, A., Baum, L., Berkovic, S., Bradfield, J., Buono, R., Catarino, C. B., Cossette, P., De Jonghe, P., Depondt, C., Dlugos, D., Ferraro, T. N., French, J., Hjalgrim, H., Jamnadas-Khoda, J., Kälviäinen, R., Kunz, W. S., Lerche, H., Leu, C., Lindhout, D., Lo, W., Lowenstein, D., McCormack, M., Moller, R. S., Molloy, A., Ng, P.-W., Oliver, K., Privitera, M., Radtke, R., Ruppert, A.-K., Sander, T., Schachter, S., Schankin, C., Scheffer, I., Schoch, S., Sisodiya, S. M., Smith, P., Sperling, M., Striano, P., Surges, R., Thomas, G. N., Visscher, F., Whelan, C. D., Zara, F., Heinzen, E. L., Marson, A., Becker, F., Stroink, H., Zimprich, F., Gasser, T., Gibbs, R., Heutink, P., Martinez, M., Morris, H. R., Sharma, M., Ryten, M., Mok, K. Y., Pulit, S., Bevan, S., Holliday, E., Attia, J., Battey, T., Boncoraglio, G., Thijs, V., Chen, W.-M., Mitchell, B., Rothwell, P., Sharma, P., Sudlow, C., Vicente, A., Markus, H., Kourkoulis, C., Pera, J., Raffeld, M., Silliman, S., Boraska Perica, V., Thornton, L. M., Huckins, L. M., William Rayner, N., Lewis, C. M., Gratacos, M., Rybakowski, F., Keski-Rahkonen, A., Raevuori, A., Hudson, J. I., Reichborn-Kjennerud, T., Monteleone, P., Karwautz, A., Mannik, K., Baker, J. H., OToole, J. K., Trace, S. E., Davis, O. S. P., Helder, S. G., Ehrlich, S., Herpertz-Dahlmann, B., Danner, U. N., van Elburg, A. A., Clementi, M., Forzan, M., Docampo, E., Lissowska, J., Hauser, J., Tortorella, A., Maj, M., Gonidakis, F., Tziouvas, K., Papezova, H., Yilmaz, Z., Wagner, G., Cohen-Woods, S., Herms, S., Julia, A., Rabionet, R., Dick, D. M., Ripatti, S., Andreassen, O. A., Espeseth, T., Lundervold, A. J., Steen, V. M., Pinto, D., Scherer, S. W., Aschauer, H., Schosser, A., Alfredsson, L., Padyukov, L., Halmi, K. A., Mitchell, J., Strober, M., Bergen, A. W., Kaye, W., Szatkiewicz, J. P., Cormand, B., Ramos-Quiroga, J. A., Sanchez-Mora, C., Ribases, M., Casas, M., Hervas, A., Arranz, M. J., Haavik, J., Zayats, T., Johansson, S., Williams, N., Dempfle, A., Rothenberger, A., Kuntsi, J., Oades, R. D., Banaschewski, T., Franke, B., Buitelaar, J. K., Arias Vasquez, A., Doyle, A. E., Reif, A., Lesch, K.-P., Freitag, C., Rivero, O., Palmason, H., Romanos, M., Langley, K., Rietschel, M., Witt, S. H., Dalsgaard, S., Borglum, A. D., Waldman, I., Wilmot, B., Molly, N., Bau, C. H. D., Crosbie, J., Schachar, R., Loo, S. K., McGough, J. J., Grevet, E. H., Medland, S. E., Robinson, E., Weiss, L. A., Bacchelli, E., Bailey, A., Bal, V., Battaglia, A., Betancur, C., Bolton, P., Cantor, R., Celestino-Soper, P., Dawson, G., De Rubeis, S., Duque, F., Green, A., Klauck, S. M., Leboyer, M., Levitt, P., Maestrini, E., Mane, S., De-Luca, D. M.-, Parr, J., Regan, R., Reichenberg, A., Sandin, S., Vorstman, J., Wassink, T., Wijsman, E., Cook, E., Santangelo, S., Delorme, R., Roge, B., Magalhaes, T., Arking, D., Schulze, T. G., Thompson, R. C., Strohmaier, J., Matthews, K., Melle, I., Morris, D., Blackwood, D., McIntosh, A., Bergen, S. E., Schalling, M., Jamain, S., Maaser, A., Fischer, S. B., Reinbold, C. S., Fullerton, J. M., Guzman-Parra, J., Mayoral, F., Schofield, P. R., Cichon, S., Mühleisen, T. W., Degenhardt, F., Schumacher, J., Bauer, M., Mitchell, P. B., Gershon, E. S., Rice, J., Potash, J. B., Zandi, P. P., Craddock, N., Ferrier, I. N., Alda, M., Rouleau, G. A., Turecki, G., Ophoff, R., Pato, C., Anjorin, A., Stahl, E., Leber, M., Czerski, P. M., Cruceanu, C., Jones, I. R., Posthuma, D., Andlauer, T. F. M., Forstner, A. J., Streit, F., Baune, B. T., Air, T., Sinnamon, G., Wray, N. R., Mac; Intyre, D. J., Porteous, D., Homuth, G., Rivera, M., Grove, J., Middeldorp, C. M., Hickie, I., Pergadia, M., Mehta, D., Smit, J. H., Jansen, R., de Geus, E., Dunn, E., Li, Q. S., Nauck, M., Schoevers, R. A., Beekman, A. T., Knowles, J. A., Viktorin, A., Arnold, P., Barr, C. L., Bedoya-Berrio, G., Bienvenu, O. J., Brentani, H., Burton, C., Camarena, B., Cappi, C., Cath, D., Cavallini, M., Cusi, D., Darrow, S., Denys, D., Derks, E. M., Dietrich, A., Fernandez, T., Figee, M., Freimer, N., Gerber, G., Grados, M., Greenberg, E., Hanna, G. L., Hartmann, A., Hirschtritt, M. E., Hoekstra, P. J., Huang, A., Huyser, C., Illmann, C., Jenike, M., Kuperman, S., Leventhal, B., Lochner, C., Lyon, G. J., Macciardi, F., Madruga-Garrido, M., Malaty, I. A., Maras, A., McGrath, L., Miguel, E. C., Mir, P., Nestadt, G., Nicolini, H., Okun, M. S., Pakstis, A., Paschou, P., Piacentini, J., Pittenger, C., Plessen, K., Ramensky, V., Ramos, E. M., Reus, V., Richter, M. A., Riddle, M. A., Robertson, M. M., Roessner, V., Rosario, M., Samuels, J. F., Sandor, P., Stein, D. J., Tsetsos, F., Van Nieuwerburgh, F., Weatherall, S., Wendland, J. R., Wolanczyk, T., Worbe, Y., Zai, G., Goes, F. S., McLaughlin, N., Nestadt, P. S., Grabe, H.-J., Depienne, C., Konkashbaev, A., Lanzagorta, N., Valencia-Duarte, A., Bramon, E., Buccola, N., Cahn, W., Cairns, M., Chong, S. A., Cohen, D., Crespo-Facorro, B., Crowley, J., Davidson, M., De; Lisi, L., Dinan, T., Donohoe, G., Drapeau, E., Duan, J., Haan, L., Hougaard, D., Karachanak-Yankova, S., Khrunin, A., Klovins, J., Kucinskas, V., Lee Chee Keong, J., Limborska, S., Loughland, C., Lönnqvist, J., Maher, B., Mattheisen, M., McDonald, C., Murphy, K. C., Nenadic, I., van Os, J., Pantelis, C., Pato, M., Petryshen, T., Quested, D., Roussos, P., Sanders, A. R., Schall, U., Schwab, S. G., Sim, K., So, H.-C., Stögmann, E., Subramaniam, M., Toncheva, D., Waddington, J., Walters, J., Weiser, M., Cheng, W., Cloninger, R., Curtis, D., Gejman, P. V., Henskens, F., Mattingsdal, M., Oh, S.-Y., Scott, R., Webb, B., Breen, G., Churchhouse, C., Bulik, C. M., Daly, M., Dichgans, M., Faraone, S. V., Guerreiro, R., Holmans, P., Kendler, K. S., Koeleman, B., Mathews, C. A., Price, A., Scharf, J., Sklar, P., Williams, J., Wood, N. W., Cotsapas, C., Palotie, A., Smoller, J. W., Sullivan, P., Rosand, J., Corvin, A., Neale, B. M.
    American Association for the Advancement of Science (AAAS)
    Published 2018
    Staff View
    Publication Date:
    2018-06-22
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Geosciences
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Genetics, Medicine, Diseases, Online Only
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2018-03-29
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0022-538X
    Electronic ISSN:
    1098-5514
    Topics:
    Medicine
    Published by:
    http://www.asm.org/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    W. Hermsen ; J. W. Hessels ; L. Kuiper ; J. van Leeuwen ; D. Mitra ; J. de Plaa ; J. M. Rankin ; B. W. Stappers ; G. A. Wright ; R. Basu ; A. Alexov ; T. Coenen ; J. M. Griessmeier ; T. E. Hassall ; A. Karastergiou ; E. Keane ; V. I. Kondratiev ; M. Kramer ; M. Kuniyoshi ; A. Noutsos ; M. Serylak ; M. Pilia ; C. Sobey ; P. Weltevrede ; K. Zagkouris ; A. Asgekar ; I. M. Avruch ; F. Batejat ; M. E. Bell ; M. R. Bell ; M. J. Bentum ; G. Bernardi ; P. Best ; L. Birzan ; A. Bonafede ; F. Breitling ; J. Broderick ; M. Bruggen ; H. R. Butcher ; B. Ciardi ; S. Duscha ; J. Eisloffel ; H. Falcke ; R. Fender ; C. Ferrari ; W. Frieswijk ; M. A. Garrett ; F. de Gasperin ; E. de Geus ; A. W. Gunst ; G. Heald ; M. Hoeft ; A. Horneffer ; M. Iacobelli ; G. Kuper ; P. Maat ; G. Macario ; S. Markoff ; J. P. McKean ; M. Mevius ; J. C. Miller-Jones ; R. Morganti ; H. Munk ; E. Orru ; H. Paas ; M. Pandey-Pommier ; V. N. Pandey ; R. Pizzo ; A. G. Polatidis ; S. Rawlings ; W. Reich ; H. Rottgering ; A. M. Scaife ; A. Schoenmakers ; A. Shulevski ; J. Sluman ; M. Steinmetz ; M. Tagger ; Y. Tang ; C. Tasse ; S. ter Veen ; R. Vermeulen ; R. H. van de Brink ; R. J. van Weeren ; R. A. Wijers ; M. W. Wise ; O. Wucknitz ; S. Yatawatta ; P. Zarka
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-01-26
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
    R. Tyzio ; R. Nardou ; D. C. Ferrari ; T. Tsintsadze ; A. Shahrokhi ; S. Eftekhari ; I. Khalilov ; V. Tsintsadze ; C. Brouchoud ; G. Chazal ; E. Lemonnier ; N. Lozovaya ; N. Burnashev ; Y. Ben-Ari
    American Association for the Advancement of Science (AAAS)
    Published 2014
    Staff View
    Publication Date:
    2014-02-08
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Autistic Disorder/*chemically induced/*genetics/metabolism ; Behavior, Animal ; Bumetanide/administration & dosage ; Chlorides/metabolism ; *Cytoprotection ; Disease Models, Animal ; Female ; Fragile X Mental Retardation Protein/genetics ; Maternal-Fetal Exchange ; Mice ; Oxytocin/*metabolism ; Parturition ; Pregnancy ; Rats ; Valproic Acid/pharmacology ; gamma-Aminobutyric Acid/*metabolism
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  6. 6
    S. Eftekhari ; A. Shahrokhi ; V. Tsintsadze ; R. Nardou ; C. Brouchoud ; M. Conesa ; N. Burnashev ; D. C. Ferrari ; Y. Ben-Ari
    American Association for the Advancement of Science (AAAS)
    Published 2014
    Staff View
    Publication Date:
    2014-10-11
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Autistic Disorder/*chemically induced/*genetics ; *Cytoprotection ; Female ; Oxytocin/*metabolism ; Pregnancy ; gamma-Aminobutyric Acid/*metabolism
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  7. 7
    F. Bonaccorso ; L. Colombo ; G. Yu ; M. Stoller ; V. Tozzini ; A. C. Ferrari ; R. S. Ruoff ; V. Pellegrini
    American Association for the Advancement of Science (AAAS)
    Published 2015
    Staff View
    Publication Date:
    2015-01-03
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  8. 8
    S. Buitink ; A. Corstanje ; H. Falcke ; J. R. Horandel ; T. Huege ; A. Nelles ; J. P. Rachen ; L. Rossetto ; P. Schellart ; O. Scholten ; S. ter Veen ; S. Thoudam ; T. N. Trinh ; J. Anderson ; A. Asgekar ; I. M. Avruch ; M. E. Bell ; M. J. Bentum ; G. Bernardi ; P. Best ; A. Bonafede ; F. Breitling ; J. W. Broderick ; W. N. Brouw ; M. Bruggen ; H. R. Butcher ; D. Carbone ; B. Ciardi ; J. E. Conway ; F. de Gasperin ; E. de Geus ; A. Deller ; R. J. Dettmar ; G. van Diepen ; S. Duscha ; J. Eisloffel ; D. Engels ; J. E. Enriquez ; R. A. Fallows ; R. Fender ; C. Ferrari ; W. Frieswijk ; M. A. Garrett ; J. M. Griessmeier ; A. W. Gunst ; M. P. van Haarlem ; T. E. Hassall ; G. Heald ; J. W. Hessels ; M. Hoeft ; A. Horneffer ; M. Iacobelli ; H. Intema ; E. Juette ; A. Karastergiou ; V. I. Kondratiev ; M. Kramer ; M. Kuniyoshi ; G. Kuper ; J. van Leeuwen ; G. M. Loose ; P. Maat ; G. Mann ; S. Markoff ; R. McFadden ; D. McKay-Bukowski ; J. P. McKean ; M. Mevius ; D. D. Mulcahy ; H. Munk ; M. J. Norden ; E. Orru ; H. Paas ; M. Pandey-Pommier ; V. N. Pandey ; M. Pietka ; R. Pizzo ; A. G. Polatidis ; W. Reich ; H. J. Rottgering ; A. M. Scaife ; D. J. Schwarz ; M. Serylak ; J. Sluman ; O. Smirnov ; B. W. Stappers ; M. Steinmetz ; A. Stewart ; J. Swinbank ; M. Tagger ; Y. Tang ; C. Tasse ; M. C. Toribio ; R. Vermeulen ; C. Vocks ; C. Vogt ; R. J. van Weeren ; R. A. Wijers ; S. J. Wijnholds ; M. W. Wise ; O. Wucknitz ; S. Yatawatta ; P. Zarka ; J. A. Zensus
    Nature Publishing Group (NPG)
    Published 2016
    Staff View
    Publication Date:
    2016-03-05
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Castro, M. C. Ferrari ; Cliquet, A.
    Springer
    Published 2000
    Staff View
    ISSN:
    1741-0444
    Keywords:
    Neuromuscular electrical stimulation ; Quadriplegia ; Artificial grasping ; Force and position feedback
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Notes:
    Abstract Neuromuscular electrical stimulation (NMES) has been used in upper limb rehabilitation towards restoring motor hand function. Quantitative evaluation of the artificially generated movement is necessary to achieve proper muscle activation. Custom-made gloves instrumented with force and position transducers were used to evaluate artificial quadriplegic grasping for a drinking activity. In spite of different sensor position, stimulation parameter dependence and lack of repeatability, grasp patterns achieved with the application of NMES follow the same patterns previously obtained with normal subjects, regarding force distribution among fingers and the shape of force curves. Larger forces were exerted by the thumb (average ranged from 2.8 to 4.5 N) following by index or long finger (average ranged from 1.8 to 3 N). The forces exerted ranged within the same interval as those previously measured and were sufficient to grasp an object of 10 N. Finger position achieved by interphalangeal joint status indicated the opening size of the hand throughout the range of movement. The instrumented gloves offer an alternative force and position feedback system for use in cylindrical grasp evaluation. The gloves can be used in a closed-loop control system, allowing on-line adjustment or in a clinical application to evaluate the results of a rehabilitation programme.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1007/BF02347047

    Articles: DFG German National Licenses
  10. 10
    Mazzer, M. ; Carnera, A. ; Drigo, A. V. ; Ferrari, C.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The elastic distortion field in (001)-grown lattice mismatched heterostructures of diamond or zinc-blende structure having misfit dislocations at the interface is calculated within the linear elasticity theory. Not only the misfit dislocation densities in the two 〈110〉 directions but also the distribution of the possible Burgers vectors are taken into consideration. A transition layer where the elastic field is appreciably laterally nonuniform extends from the interface up to a distance of the same order of the mean dislocation spacing. It is shown that this transition layer affects x-ray diffraction measurements. Beyond this region, the elastic distortion field is uniform and is found to depend only on the mean values of the Burgers vectors associated with the two dislocation distributions. In particular it is shown that in general the strain field, i.e., the symmetric part of the elastic distortion field, is not biaxial. The three independent parameters describing the lattice deformations in the epilayer depend not only on the projections on the interface of the edge components but also on the screw components of the Burgers vectors. The predictions of this model are tested on InxGa1−xAs/GaAs samples analyzed by means of channeling and double crystal x-ray diffractometry. The unbalance of the dislocation densities in the two 〈110〉 directions measured by the dechanneling behavior of the samples agrees rather well with the prediction of the model on the basis of the measured asymmetries of the strain field.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.346825

    Articles: DFG German National Licenses
  11. 11
    Zeng, W. ; Jiang, S. S. ; Ferrari, C. ; Gennari, S. ; Salviati, G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    〈100〉 oriented misfit dislocations in In0.06Ga0.94As/GaAs heterostructures with relatively low misfit f (f=0.0043) have been observed by synchrotron radiation topography. InGaAs samples consist of 2500, 4000, and 6500 A(ring) thick In0.06Ga0.94As layers grown by molecular beam epitaxy at 580 °C. All the topographs were taken by synchrotron radiation double crystal topography. The panchromatic cathodoluminescence complementary technique in the scanning electron microscope was also applied. Misfit dislocations lying along both 〈100〉 and 〈110〉 directions have been observed. The dislocations parallel to 〈100〉 directions have much lower density and extension in length than those aligned along the 〈110〉 directions. The climb mechanism of the generation of dislocations, probably due to the high density of point defects during the high temperature growth, is discussed. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.363012

    Articles: DFG German National Licenses
  12. 12
    Monelli, A. ; Corni, F. ; Tonini, R. ; Ferrari, C. ; Ottaviani, G. ; Zanotti, L. ; Queirolo, G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Quantitative in-depth distribution of the elements contained in silicon-rich oxide thin films deposited on single-crystal silicon by low temperature plasma-assisted deposition has been performed by a combination of various MeV ion beam techniques. The quantity of oxygen and nitrogen has been measured by nuclear reactions, the silicon content has been determined by Rutherford backscattering, and elastic recoil detection was used for hydrogen. All the samples contain not only Si and O, but also N and H, which are residuals from the reactions involved in the deposition process. We did find that the MeV beam used in the nuclear techniques can induce a process of hydrogen desorption, which causes the measured H content to be a function of the He dose received by the sample. This phenomenon, not previously reported, must be taken into account to give the correct H content. The study of the kinetics of the He-induced hydrogen desorption has been used to correct the experimental data and to determine the original hydrogen content. The correction factor is in most of the cases close to 2 and outside any experimental error. Moreover the studies of the kinetics give information on the kinds of hydrogen complexes contained in the films. The results suggest that, on the basis of the strength of the binding energies, hydrogen is present in at least two different configurations, weakly and strongly bonded. In the first configuration hydrogen is easily desorbed either under the action of the ion beam or of the heat treatment at 600 °C, in the second, hydrogen is lost only after treatment at 900 °C. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.362766

    Articles: DFG German National Licenses
  13. 13
    Ferrari, C. ; Franzosi, P.

    [S.l.] : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    n-type Si- and Sn-doped InP homoepitaxial layers have been grown on (001) Fe-doped semi-insulating InP substrates by metal organic vapor phase epitaxy and liquid phase epitaxy, respectively. The net carrier concentration has been determined by conventional Hall measurements, while the total dopant concentration has been evaluated by secondary ion mass spectrometry. The change in lattice constant has been carefully measured by x-ray double crystal diffractometry as a function of the dopant concentration. A lattice dilation has been observed for both dopants, but the Sn doping has been found to be about eight times less effective than the Si doping. The results could not be explained by Vegard's law. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.361512

    Articles: DFG German National Licenses
  14. 14
    Lamberti, C. ; Bordiga, S. ; Boscherini, F. ; Pascarelli, S. ; Schiavini, G. M. ; Ferrari, C. ; Lazzarini, L. ; Salviati, G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A local structural investigation has been carried out on the 10 A(ring) InAsxP1−x layer in ad hoc grown InAsxP1−x/InP epitaxial multistructures deposited by low pressure metallorganic chemical vapor deposition by means of extended x-ray absorption fine structure spectroscopy, high resolution transmission electron microscopy, and high resolution x-ray diffraction analyses. The goal was to characterize the local structure of the unwanted, strained, interface layers of InAsxP1−x produced by the exposure of the InP surface to AsH3 as occurs during the growth of InP/In0.53Ga0.47As heterostructures optimized for photonics. High resolution x-ray diffraction and high resolution transmission electron microscopy confirm the high crystalline perfection of the investigated interfaces. As K-edge extended x-ray absorption fine structure analysis shows, the first shell environment of As at these interfaces is similar to that found in bulk InAsxP1−x alloys of similar composition, as determined experimentally and by comparison with recent theories of bond lengths in semiconductor alloys. In particular we measure an As—In bond length which varies at most 0.02 A(ring) with As concentration at the interface; this implies that epitaxy with InP is accompanied by local structural distortions, such as bond angle variations, which accommodate the nearly constant As—In bond length.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.357292

    Articles: DFG German National Licenses
  15. 15
    Andreani, L. C. ; De Nova, D. ; Di Lernia, S. ; Geddo, M. ; Guizzetti, G. ; Patrini, M. ; Bocchi, C. ; Bosacchi, A. ; Ferrari, C. ; Franchi, S.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Photoreflectance (PR) at different temperatures and spectroellipsometry (SE) at room temperature were used to study, in a systematic and complementary way, the optical response of a series of strained and relaxed InxGa1−xAs (x〈0.15) epilayers. All the samples were grown by molecular-beam epitaxy on GaAs, both with and without a GaAs cap layer, which in the thinnest samples determines a single-quantum-well configuration. The effects of the strain on the optical structures E0, E1, and E1+Δ1 observed in the 1.2–3.3 eV photon-energy range were analyzed by fitting standard critical points (CP) line shapes to the PR and SE spectra. The CP experimental energies versus x were compared with the relations obtained in the framework of the elastic strain theory and, in the quantum-well structures, of the envelope-function scheme. The excellent agreement between experiment and theory allowed us to determine, independently and only by optical techniques, the strain ε and the composition x values, which compare well with those measured by x-ray diffraction. Additional information concerning the critical thickness for the pseudomorphic growth and the residual strain in quasirelaxed layers was achieved. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.360498

    Articles: DFG German National Licenses
  16. 16
    Ferrari, C. ; Franzosi, P.

    [S.l.] : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The interface grading in III-V compound single heterostructures has been investigated by using the double-crystal diffractometry. Theoretical rocking curves have been calculated for the particular example of InGaAs/InP slightly mismatched heterostructures, assuming the 004 reflection and the CuKα1 radiation. It has been found that the Pendellosung fringe intensity is the most suitable and sensitive parameter to determine the type and amount of the lattice parameter gradient close to the interface. Rocking curves have been experimentally measured for a variety of single heterostructures and a satisfactory agreement between experimental and theoretical profiles has been obtained when the correct interface shape was assumed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.342970

    Articles: DFG German National Licenses
  17. 17
    Ferrari, C. ; Franzosi, P. ; Gastaldi, L. ; Taiariol, F.

    [S.l.] : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    X-ray double-crystal diffractometry has been used to assess the crystal quality of InGaAs/InP single heterostructures grown by molecular-beam epitaxy. Experiments performed on step etched samples have indeed shown that the width of the epilayer Bragg peak as a function of the epilayer thickness is in good agreement with the theoretical predictions for perfect crystals. Finally, preliminary observations of InGaAlAs/InP heterostructures have shown very narrow Bragg peaks and this demonstrates the good crystal quality of the quaternary layers.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.341001

    Articles: DFG German National Licenses
  18. 18
    CROSIGNANI, P.-G. ; MATTEI, ANNA ; FERRARI, C. ; GIOVANELLI, M. A.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1982
    Staff View
    ISSN:
    1471-0528
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Notes:
    Summary. A patient with prolactin-secreting pituitary microadenoma was treated with bromocriptine, 5 mg daily for 1 year. Despite normalization of prolactin levels throughout the treatment period, partial destruction of the sellar floor with growth of the adenoma into sphenoidal sinus were evident in a control tomography performed at the end of the treatment.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1471-0528.1982.tb04688.x

    Articles: DFG German National Licenses
  19. 19
    Ferrari, C. ; Francesio, L. ; Franzosi, P. ; Gennari, S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Recently, a method has been proposed in order to measure the threading dislocation density in epitaxial layers, based on x-ray diffraction and the analysis of the Bragg peak width β. According to this model, β is broadened by a strain effect (a modification of the lattice parameter near the dislocation line) and by a tilt effect (a bending of lattice planes caused by the dislocation), independent of each other. In the present work, this method is applied on GaAs/InAs and InAs/GaAs heterostructures. Different geometrical conditions and reflections, including (004), (115), (335), (444), and (117), have been investigated, showing a strong difference in β when, the reflection fixed, the grazing incidence or grazing emergence geometry is chosen. We demonstrate that this effect can be explained in terms of a lateral nonuniformity of the eplilayer induced by the misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.116955

    Articles: DFG German National Licenses
  20. 20
    Manara, G. C. ; Panfilis, G. ; Bacchi, A.Bottazzi ; Ferrari, C. ; Tedeschi, F. ; Brusati, R. ; Scandroglio, R. ; Allegra, F.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1981
    Staff View
    ISSN:
    1600-0560
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Notes:
    This case report illustrates the microscopical and ultrastructural findings obtained in a case of Abrikossoff's tumor. On the basis of the light and ultrastructural data a neural histogenesis is suggested.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1600-0560.1981.tb01012.x

    Articles: DFG German National Licenses