Search Results - (Author, Cooperation:C. Dai)
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1Latest Papers from Table of Contents or Articles in PressW.-L. Zhang, Y. Song, W.-Y. Wang, C.-D. Cao, P.-C. Dai, C.-Q. Jin, and G. Blumberg
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-09-14Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Superfluidity and superconductivityPublished by: -
2Latest Papers from Table of Contents or Articles in PressZhou, J., Nie, D., Li, J., Du, X., Lu, Y., Li, Y., Liu, C., Dai, W., Wang, Y., Jin, Y., Pan, J.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-01-04Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressRen, W., Liu, Y., Wang, X., Piao, C., Ma, Y., Qiu, S., Jia, L., Chen, B., Wang, Y., Jiang, W., Zheng, S., Liu, C., Dai, N., Lan, F., Zhang, H., Song, W.-c., Du, J.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-02-21Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
4Latest Papers from Table of Contents or Articles in PressLi, T., Song, J., Zhao, X., Yang, Z., Pastel, G., Xu, S., Jia, C., Dai, J., Chen, C., Gong, A., Jiang, F., Yao, Y., Fan, T., Yang, B., Wagberg, L., Yang, R., Hu, L.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-03-12Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-01-09Publisher: American Chemical Society (ACS)Print ISSN: 0887-0624Electronic ISSN: 1520-5029Topics: Chemistry and PharmacologyEnergy, Environment Protection, Nuclear Power EngineeringProcess Engineering, Biotechnology, Nutrition TechnologyPublished by: -
6Latest Papers from Table of Contents or Articles in PressW. Yuan ; T. Wu ; H. Fu ; C. Dai ; H. Wu ; N. Liu ; X. Li ; M. Xu ; Z. Zhang ; T. Niu ; Z. Han ; J. Chai ; X. J. Zhou ; S. Gao ; B. Zhu
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-08-28Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; Animals ; CD4-Positive T-Lymphocytes ; Chromatin Immunoprecipitation ; Cytochrome P-450 Enzyme System/genetics ; Drosophila Proteins/chemistry/genetics/*metabolism ; Drosophila melanogaster ; Embryonic Stem Cells ; Gene Silencing ; Histone-Lysine N-Methyltransferase/chemistry/genetics/*metabolism ; Histones/chemistry/genetics/*metabolism ; Humans ; Lysine/metabolism ; Methylation ; Mice ; Molecular Sequence Data ; Mutagenesis ; Nucleosomes/*metabolism/ultrastructure ; Peptide Fragments/metabolism ; Polycomb Repressive Complex 2 ; Polycomb-Group Proteins ; Repressor Proteins/chemistry/genetics/*metabolism ; *Transcription, GeneticPublished by: -
7Latest Papers from Table of Contents or Articles in PressS. J. Zhang, Z. X. Wang, D. Wu, Q. M. Liu, L. Y. Shi, T. Lin, S. L. Li, P. C. Dai, T. Dong, and N. L. Wang
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-12-13Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Superfluidity and superconductivityPublished by: -
8Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-10-31Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
9Latest Papers from Table of Contents or Articles in PressDu, Y., Xin, L., Shi, Y., Zhang, T.-H., Wu, N. C., Dai, L., Gong, D., Brar, G., Shu, S., Luo, J., Reiley, W., Tseng, Y.-W., Bai, H., Wu, T.-T., Wang, J., Shu, Y., Sun, R.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-01-19Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Genetics, MicrobiologyPublished by: -
10Latest Papers from Table of Contents or Articles in PressGao, N., Me, R., Dai, C., Seyoum, B., Yu, F.-s. X.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-07-10Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
11Articles: DFG German National LicensesChuu, D. S. ; Dai, C. M. ; Hsieh, W. F. ; Tsai, C. T.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: CdS films have been grown on Corning glass by pulsed laser evaporation (PLE) and thermal evaporation (TE) techniques at a substrate temperature between room temperature and 250 °C. The quality of these films is investigated by resonance Raman scattering, x-ray diffraction and optical transmittance. Our results reveal that the Raman shifts of the surface phonon mode are observed with 300 and 297 cm−1 by PLE and TE techniques, respectively, and as many as four overtones are obtained by PLE method. The difference of Raman shift between these two techniques are caused by the discrepancy of crystallite sizes which is larger for PLE technique. The crystallite sizes are in the range of 200–500 A(ring) in diameter. Highly oriented films have been grown by both of the techniques even when the substrate is at room temperature.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The transverse-optical (TO) phonon mode in a CdS film with a thickness less than 410 A(ring) is observed at 4880 A(ring) excitation wavelength which is above the band gap of CdS bulk (2.42 eV) at room temperature. This phenomenon is ascribed to the size quantization of the free carrier in the low-dimensional thin-film structure. The quantum size effect causes a blue shift of the band gap in the as-deposited CdS thin film. The Raman shift of the TO mode of CdS film is around 220 cm−1. The softening energy of the TO phonon mode is about 8 cm−1. It was found that this softening energy is independent of the film thickness.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The morphology and redistribution of dopants at the interfaces between silicon-implanted, low-pressure chemical-vapor-deposited silicon films with an n+ single-crystal silicon substrate are described. Using high-resolution transmission electron microscopy, it is shown that silicon implantation definitely lowers the annealing temperature needed to break up the native oxide layer. A post annealing temperature of 900 °C for 30 min, which is acceptable for sub-μm processes, is sufficient to cause the break up of the native oxide layer and the subsequent epitaxial growth through it with the aid of silicon implantation. The depth profile obtained by secondary ion mass spectrometry shows that the implanted dopants were piled up at the interfacial layer after thermal treatment. The redistributed profiles of impurities depend on the concentration of oxygen. The junction depth of the silicon-implanted polysilicon films is shallower than that of the unimplanted films.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Thin films were deposited on Pyrex glass substrates from Ti and TiO2 targets at room temperature by laser evaporation technique. These films were characterized by scanning electron microscopy, Auger electron spectroscopy, and depth profile analysis. The films deposited from Ti target are TiCx and TiOy matrix, while films from TiO2 target are almost stoichiometric in oxygen. The films have a smooth surface morphology under a laser power density of 5 × 106 W/cm2, which is close to the critical intensity for evaporation. The interface reaction of these films is strong, and the Ti atoms diffuse into the substrate.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesDai, C. M. ; Su, C. S. ; Chuu, D. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 A(ring) per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3 Ω cm. The visible transmittance (between 4000 and 7000 A(ring)) is above 75%.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesDai, C. M. ; Wu, K. H. ; Hsieh, W. F. ; Chuu, D. S.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: An easily fabricated xenon-IV ion laser is described. The various parameters considered are the gas pressures, the excitation voltages, and the repetition rates. Based on our results we believe that there exists an optimal excitation voltage and an optimal repetition rate for achieving largest lasing power and good reliability.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesDai, C. M. ; Chuu, D. S. ; Hsieh, W. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A method, which utilizes interference enhanced Raman scattering and resonant Raman scattering techniques, is used to overcome the low efficiency of Raman methods to diagnose highly reflective materials. As applied to the p-type Si wafer, the enhanced gain is up to nearly a factor of 80 at 4880 A(ring) excitation. Because of the strong absorption of the scattered light, it is recommended that the suitable deposited thickness of CdS films should not be thicker than 700 A(ring).Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesBPRS (Beijing, Paris, Roma, Saclay) Collaboration ; Bacci, C. ; Belli, P. ; Bernabei, R. ; Dai, C. ; Di Nicolantonio, W. ; Ding, L.K. ; Gaillard-Lecanu, E. ; Lyon group ; Incicchitti, A. ; Chambon, B. ; Pastor, C. ; Tao, C. ; Drain, D. ; Prosperi, D. ; Kuang, H.H. ; Mallet, J. ; Mosca, L. ; De Jesus, M. ; Chazal, V. ; Giraud-Heraud, Y. ; Messous, Y.
Amsterdam : ElsevierStaff ViewISSN: 0920-5632Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesBacci, C. ; Belli, P. ; Bernabei, R. ; Dai, C. ; Incicchitti, A. ; Prosperi, D.
Amsterdam : ElsevierStaff ViewISSN: 0920-5632Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesBeijing-Paris-Roma-Saclay (BPRS) Collaboration ; Bacci, C. ; Belli, P. ; Bernabei, R. ; Dai, C. ; Ding, L. ; Di Nicolantonio, W. ; Gaillard, E. ; Incicchitti, A. ; Tao, C. ; Prosperi, D. ; Gerbier, G. ; Kuang, H. ; Mallet, J. ; Mosca, L.
Amsterdam : ElsevierStaff ViewISSN: 0927-6505Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: