Search Results - (Author, Cooperation:C. Cui)
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1Staff View
Publication Date: 2018-03-06Publisher: HindawiPrint ISSN: 1687-5966Electronic ISSN: 1687-5974Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
2Qi, W., Jia, W., Liu, D., Li, J., Bi, Y., Xie, S., Li, B., Hu, T., Du, Y., Xing, L., Zhang, J., Zhang, F., Wei, X., Eden, J.-S., Li, H., Tian, H., Li, W., Su, G., Lao, G., Xu, C., Xu, B., Liu, W., Zhang, G., Ren, T., Holmes, E. C., Cui, J., Shi, W., Gao, G. F., Liao, M.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-01-03Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
3Zhang, M., Miao, Y., Chen, Q., Cai, M., Dong, W., Dai, X., Lu, Y., Zhou, C., Cui, Z., Xiong, B.
The Federation of American Societies for Experimental Biology (FASEB)
Published 2018Staff ViewPublication Date: 2018-01-03Publisher: The Federation of American Societies for Experimental Biology (FASEB)Print ISSN: 0892-6638Electronic ISSN: 1530-6860Topics: BiologyPublished by: -
4L. Gan ; C. Cui ; M. Heggen ; F. Dionigi ; S. Rudi ; P. Strasser
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-12-20Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
5Panneerdoss, S., Eedunuri, V. K., Yadav, P., Timilsina, S., Rajamanickam, S., Viswanadhapalli, S., Abdelfattah, N., Onyeagucha, B. C., Cui, X., Lai, Z., Mohammad, T. A., Gupta, Y. K., Huang, T. H.-M., Huang, Y., Chen, Y., Rao, M. K.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-10-04Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
6Staff View
Publication Date: 2018-10-18Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: materials sciencePublished by: -
7J. Zheng ; M. Umikawa ; C. Cui ; J. Li ; X. Chen ; C. Zhang ; H. Huynh ; X. Kang ; R. Silvany ; X. Wan ; J. Ye ; A. P. Canto ; S. H. Chen ; H. Y. Wang ; E. S. Ward ; C. C. Zhang
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-06-05Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Cell Differentiation ; Cell Division ; Cells, Cultured ; Disease Models, Animal ; Fetal Blood/cytology/metabolism ; HEK293 Cells ; Hematopoietic Stem Cells/*cytology/*metabolism ; Humans ; Leukemia/*metabolism/*pathology ; Membrane Glycoproteins/genetics/*metabolism ; Mice ; Myeloid-Lymphoid Leukemia Protein ; Receptors, Immunologic/genetics/*metabolismPublished by: -
8Wang, Y. H. ; Cui, C. G. ; Zhang, Y. Z. ; Li, S. L. ; Li, J. ; Li, L.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A set of resistivity-temperature (R-T) curves measured under various applied fields in a high-Tc Bi-Pb-Sr-Ca-Cu-O thin film which has a zero-resistance temperature Tc0 of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux-creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation-dependent activation energy U0(H,aitch-theta). The U0(H,aitch-theta) has a very high value of 381.6 meV under a field of 0.1 T parallel to the c axis. The upper critical field Hc2 determined from these R-T curves shows high values and the effect of flux creep to the Hc2(0) is examined by the irreversible behavior with the "giant'' flux-creep model.Type of Medium: Electronic ResourceURL: -
9Qiu, X. G. ; Cui, C. G. ; Li, S. L. ; Liu, M. X. ; Li, J. ; Zhang, Y. Z. ; Zhao, Y. Y. ; Xu, P. ; Li, L. ; Chen, L. F. ; Chen, P. F. ; Li, N. ; Liu, G. T.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The voltage V versus current I of a high-quality YBa2Cu3O7−x thin film with zero-resistance temperature equal to 90.8 K was measured at temperatures near Tc (85, 87, and 90 K, respectively) under different magnetic fields (0–7 T). A significant result is that the critical-current density of the film reached 1.37×104 A/cm2 (zero field) even at 90 K, implying that strong pinning centers exist in our sample. However, a small applied magnetic field will diminish the critical-current densities remarkably. The pinning-force densities are found to follow Kramer's scaling law in both perpendicular and parallel directions of the magnetic fields to the c axis of the film. A possible influence of thermally activated flux creep on the pinning mechanism is confirmed.Type of Medium: Electronic ResourceURL: -
10Qiu, X. G. ; Cui, C. G. ; Zhang, Y. Z. ; Li, S. L. ; Zhao, Y. Y. ; Xu, P. ; Li, L.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The critical current density Jc(B,T) of epitaxial YBa2Cu3O7−x (YBCO) thin films on LaAlO3 was measured under different applied magnetic fields (0–7 T) with the temperature ranging from 65 to 79 K. At 65 K, the zero-field critical current density of the best film was 5.8×106 A/cm2; even at magnetic fields up to 7 T, Jc could reach as high as 1×106 A/cm2. Strong anisotropy was observed at 79 K. The anisotropy behavior diminished with the decrease of temperature. Experimental results showed that Jc was proportional to (Tc−T)3/2 ; this was in accordance with the theoretical explanation by the Josephson junction model for granular superconductors.Type of Medium: Electronic ResourceURL: -
11Cui, C. X. ; Kertesz, M. ; Dupuis, M.
College Park, Md. : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: The electronic and dynamic properties of all-trans polyacetylene have been calculated on the basis of oligomer calculations on H–(CH)10–H and H–(CH)22–H at the ab initio 6-31G level. The calculated ir and Raman intensities are in good agreement with the experimental relative intensities.Type of Medium: Electronic ResourceURL: -
12Staff View
ISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: The force-constant matrix of an oligomer, composed of five or more repeat units with appropriate terminal groups, can be used to construct the force-constant matrix of the corresponding planar or helical polymer. The calculations on some typical polymers (polymeric sulfur, polyacetylene, and polyethylene) show that the oligomer approach is accurate enough to duplicate the vibrational frequencies of frozen-phonon calculations. The oligomer approach has much more predictive power if used in conjunction with some form of empirical scaling (scaled quantum-mechanical oligomer force field for polymers). ir and Raman selection rules for helical polymers are also discussed. Vibrational frequencies and intensities of polymeric sulfur and polyethylene have been calculated at the ab initio STO-3G, 4-31G, 6-31G, and 6-31G* basis-set levels. The agreement of frequencies with experiment is excellent. The quality of calculation is limited by the basis set and theoretical model used rather than the oligomer approach.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National Licenses
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14Staff View
ISSN: 0925-4005Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyElectrical Engineering, Measurement and Control TechnologyType of Medium: Electronic ResourceURL: -
15Staff View
ISSN: 0009-2614Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
16Staff View
ISSN: 0009-2614Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
17Staff View
ISSN: 0167-0115Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: MedicineType of Medium: Electronic ResourceURL: -
18Wang, H. S. ; Cui, C. G. ; Li, S. L. ; Zhang, J. L. ; Lu, Y. ; Zhao, B. R. ; Zhao, Y. Y. ; Li, L.
Springer
Published 1991Staff ViewISSN: 1573-4803Source: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsNotes: Abstract The relationship between the transport J c and the microstructure of the bulk YBa2Cu3O7−03B4; samples prepared in various sintering conditions has been studied. The results show that the oxygen atmosphere during sintering and cooling not only influence the crystal structure of the grains but also the grain sizes and the nature of the grain boundaries. The pellet forming pressure affects the orientation of the grains. The width of the grain boundaries is the most important factor in determining the values of transport J c.Type of Medium: Electronic ResourceURL: -
19Staff View
ISSN: 1573-4803Source: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsNotes: Abstract Reactive deposition is a novel process for producing high-surface-area and highly porous cobalt anodes. The fundamental factors affecting the macro- and microstructure of cobalt electrodes produced by reactive deposition have been studied. The discharge performance of the reactively deposited cobalt anodes is significantly better than those prepared by solid-state sintering. The porous structure of the reactively deposited cobalt electrodes shows unique characteristics of fine and coarse pore network, which enhances the efficiency and utilization of the cobalt anodes. More significantly, it is shown that the porous structure as well as the porosity of the cobalt electrodes can be controlled by monitoring the dynamic states of the Co(OH)2 colloid layer at the electrode surface, i.e. the deposition parameters. Reactive deposition opens up the feasibility of controlling the porous structure of the battery plates to enhance the utilization and efficiency of the battery plates, especially in the case of high loadings.Type of Medium: Electronic ResourceURL: -
20Staff View
ISSN: 1432-1424Keywords: Escherichia coli ; Protoplast ; Mechanosensitive channels ; Whole-cell patch clamp recording ; Osmotic pressure ; K+ efflux systemSource: Springer Online Journal Archives 1860-2000Topics: BiologyChemistry and PharmacologyNotes: Abstract Whole-cell patch clamp recordings were done on giant protoplasts of Escherichia coli. The pressure sensitivity of the protoplasts was studied. Two different unit conductance mechanosensitive channels, 1100 ± 25 pS and 350 ± 14 pS in 400 mm symmetric KCl solution, were observed upon either applying positive pressure to the interior of the cells or down shocking the cells osmotically. The 1100 pS conductance channel discriminated poorly among the monovalent ions tested and it was permeable to Ca2+ and glutamate−. Both of the two channels were sensitive to the osmotic gradient across the membrane; the unit conductances of the channels remained constant while the mean current of the cell was increased by increasing the osmotic gradient. Both of the channels were voltage sensitive. Voltage-ramp results showed that the pressure sensitivity of protoplasts was voltage dependent: there were more channels active upon depolarization than hyperpolarization. The mech anosensitive channels were reversibly blocked by gadolinium ion. Also they could reversibly be inhibited by protons. Mutations in two of the potassium efflux systems, KefB and KefC, did not affect the channel activity, while a null mutation in the gene for KefA changed the channel activity significantly. This indicates a potential modulation of these channels by KefA.Type of Medium: Electronic ResourceURL: