Search Results - (Author, Cooperation:C. C. Lee)
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1Y. Hu ; C. C. Lee ; M. W. Ribbe
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-08-06Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Azotobacter vinelandii ; Biocatalysis ; Carbon Monoxide/*metabolism ; Deuterium ; Ethylenes/metabolism ; Hydrocarbons/*metabolism ; Methane/metabolism ; Molybdenum ; Nitrogenase/chemistry/*metabolism ; Oxidation-Reduction ; Substrate Specificity ; VanadiumPublished by: -
2J. A. Wiig ; Y. Hu ; C. C. Lee ; M. W. Ribbe
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-09-29Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Bacterial Proteins/*chemistry ; Carbon/*chemistry ; Catalytic Domain ; Deuterium Exchange Measurement ; Methylation ; Methyltransferases/chemistry ; Nitrogenase/*chemistry ; RNA/*chemistry ; S-Adenosylmethionine/*chemistryPublished by: -
3S. Y. Xu ; I. Belopolski ; N. Alidoust ; M. Neupane ; G. Bian ; C. Zhang ; R. Sankar ; G. Chang ; Z. Yuan ; C. C. Lee ; S. M. Huang ; H. Zheng ; J. Ma ; D. S. Sanchez ; B. Wang ; A. Bansil ; F. Chou ; P. P. Shibayev ; H. Lin ; S. Jia ; M. Z. Hasan
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-07-18Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
4E. C. de Bruin ; N. McGranahan ; R. Mitter ; M. Salm ; D. C. Wedge ; L. Yates ; M. Jamal-Hanjani ; S. Shafi ; N. Murugaesu ; A. J. Rowan ; E. Gronroos ; M. A. Muhammad ; S. Horswell ; M. Gerlinger ; I. Varela ; D. Jones ; J. Marshall ; T. Voet ; P. Van Loo ; D. M. Rassl ; R. C. Rintoul ; S. M. Janes ; S. M. Lee ; M. Forster ; T. Ahmad ; D. Lawrence ; M. Falzon ; A. Capitanio ; T. T. Harkins ; C. C. Lee ; W. Tom ; E. Teefe ; S. C. Chen ; S. Begum ; A. Rabinowitz ; B. Phillimore ; B. Spencer-Dene ; G. Stamp ; Z. Szallasi ; N. Matthews ; A. Stewart ; P. Campbell ; C. Swanton
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-10-11Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Carcinogens/toxicity ; Carcinoma, Non-Small-Cell Lung/chemically induced/*diagnosis/*genetics ; Cytidine Deaminase/genetics ; Evolution, Molecular ; Gene Dosage ; *Genetic Heterogeneity ; *Genomic Instability ; Humans ; Lung Neoplasms/chemically induced/*diagnosis/*genetics ; Mutation ; Neoplasm Recurrence, Local/genetics ; Prognosis ; Smoking/adverse effects ; Translocation, Genetic ; Tumor Cells, CulturedPublished by: -
5Lee, C.-C. ; Machlin, E. S. ; Rathore, H.
[S.l.] : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A nondestructive technique, based on energy-dispersive x-ray spectroscopy, was applied to characterize mass divergences in multilayer interconnects. The technique was used to reveal less than 0.5-μm-diam subsurface voids, precipitates, local changes in thickness of subsurface conducting layer, electromigration-induced mass divergences at conjugate mass source and sink in both the Al-Cu conducting layer and intermetallic compound overlayer, and a thin, hairline crack in the surface layer that is hardly visible in scanning electron microscopy.Type of Medium: Electronic ResourceURL: -
6Lee, C.-C. ; Machlin, E. S. ; Rathore, H.
[S.l.] : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Various suggestions for the origin of the beneficial effect of TiAl3 layers on the electromigration resistance of Al-Cu interconnect stripes have been evaluated experimentally. The leading candidate for this effect, the shunting of current through the intermetallic compound layer that spans opens (voids) in the Al-Cu layer, cannot account for the correlation found in the present investigation between the median time to failure and the median rate of increase of electrical resistance in the Al-Cu layer of different multilayer interconnect configurations. When the TiAl3 layer lies above the Al-Cu conducting layer, the major enhancement of median lifetime to failure is an effect the TiAl3 layer has on the "electromigration resistance'' of the Al-Cu layer. This effect arises from the overlayer acting to decrease the rate of mass transport in the Al-Cu layer rather than from any effect on the grain size or texture of the Al-Cu layer. It is believed that the TiAl3 overlayer acts to produce triaxiality in the local stress fields developed at mass sinks and sources. This triaxiality of the stress field should act to increase the local yield strengths. A model analysis shows that the yield strengths required to reduce the mass flux by the observed amount are reasonable for a near triaxial state of stress. Only when the TiAl3 layer is below the Al-Cu layer is it possible that shunting is the cause of the enhancement in the median time to failure relative to that for a single Al-Cu interconnect layer.Type of Medium: Electronic ResourceURL: -
7Jen, S. U. ; Yao, Y. D. ; Huang, P. L. ; Lee, C. C. ; Chang, S. C.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A series of high yielding strength (90–180 ksi) and high-elongation (30%–45%) FeAlMnC steels have been made. The magnetic, microstructural, and thermal expansion properties of these steels have been studied. Basically, their magnetic transitions on cooling can be classified into three groups according to their microstructures: (i) For fully austenitic (γ) steels, the transition is from paramagnetic to antiferromagnetic. TN is lowered with the addition of Al; (ii) for α+γ phase steel (volume fraction of α≤0.3%), the transition is from superparamagnetic to antiferromagnetic, and (iii) for the mixed phase steel, whose α phase has percolated, it is ferromagnetic with TC(approximately-equal-to)200 C. The susceptibility of austenitic steels is low. Their nonmagnetic properties are comparable to commercial 304 or 25/12 stainless steel. An Invar-like property in the thermal expansion was observed around TN. Their volume magnetostriction values are in the range of 10−6–10−5.Type of Medium: Electronic ResourceURL: -
8Jen, S. U. ; Lee, C. C. ; Huang, P. L. ; Lin, S. T.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Amorphous Fe80−xMxB14Si6 alloys with M=Mo, V, Mn, and 2≤x≤14 have been made by the rapid quenching method. The critical exponents β, γ, δ, and Tc were determined by two independent methods: the method of Kouvel-Fisher and the scaling plot. With the addition of M, β, and γ deviate more from the values predicted by the three-dimensional Heisenberg model, and are closer to the values proposed by Sobotta and Wagner. δ remains less changed. The magnetic inhomogeneity of these alloys is evidenced by the specific heat, the forced magnetoresistance, and the Mössbauer measurements. By increasing x, the peak of specific heat becomes smeared and less divergent, and forced magnetoresistance changes from negative to positive around Tc.Type of Medium: Electronic ResourceURL: -
9Robinson, H. G. ; Haynes, T. E. ; Allen, E. L. ; Lee, C. C. ; Deal, M. D. ; Jones, K. S.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Experimental observations of dopant diffusion and defect formation are reported as a function of implant temperature in Si implanted GaAs. The diffusion of Si during post-implant annealing decreases by a factor of 2.5 as the implant temperature increases from −2 to 40 °C. In this same temperature range, the maximum depth and density of extrinsic dislocation loops increase by factors of 3 and 4, respectively. Rutherford backscattering channeling measurements indicate that Si implanted GaAs undergoes an amorphous to crystalline transition at Si implant temperatures between −51 and 40 °C. A unified explanation of the effects of implant temperature on both diffusion and dislocation formation is proposed based on the known differences in sputter yields between crystalline and amorphous semiconductors. The model assumes that the sputter yield is enhanced by amorphization in the lower temperatures, thus increasing the excess vacancy concentration. Estimates of excess vacancy concentration are obtained by simulations of the diffusion profiles and are quantitatively consistent with a realistic sputter yield enhancement.Type of Medium: Electronic ResourceURL: -
10Lee, C. C. ; Cui, H. L. ; Cai, J. ; Lenzing, E. ; Pastore, R. ; Rhodes, D. ; Perlman, B. S.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A transient semiconductor device simulation model based on the recently developed Lei-Ting hydrodynamic balance equations is presented. Unlike other hydrodynamic models, where the various relaxation rates are imported from Monte Carlo calculations or simply assumed to be constant, our model calculates these relaxation rates within the simulation process, as functions of the electron drift velocity, electron temperature, as well as the electron density. Without any complicated mathematics, a decoupled method with a relatively large time step has been applied to the transient simulation on a one-dimensional ballistic diode. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Fang, Y. K. ; Hwang, S. B. ; Lin, C. Y. ; Lee, C. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The structure and hydrogen gas sensing properties of a trench Pd-thin oxide-Si Schottky diode are studied and compared with a planar one. The trench diode possesses additional vertical surface area and a large number of interface traps induced by injected hydrogen ions. The additional vertical surface area enlarges the entrance of H2 molecules, and the generated middle traps enhance the carrier tunneling. Also, the generated shallow traps can catch the carrier to form a thin surface charge layer and lower the barrier. The sensitivity of the trench diode is thus higher than that of the planar diode under room-temperature operation.Type of Medium: Electronic ResourceURL: -
12Covington, B. C. ; Lee, C. C. ; Hu, B. H. ; Taylor, H. F. ; Streit, D. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Optical absorption spectra have been measured from 6 to 296 K for a GaAs/AlAs multiple quantum well sample which shows a strong peak at 11.1 μm at room temperature. These and previously published results are compared with predictions of an effective mass model which takes into account conduction-band nonparabolicity.Type of Medium: Electronic ResourceURL: -
13Olowolafe, J. O. ; Kawasaki, H. ; Lee, C. C. ; Klein, J. ; Pintchovski, F. ; Jawarani, D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Al-Si-Cu alloy films sputter-deposited on reactively ion-sputtered TiN/Ti/SiO2 substrates were characterized and evaluated for interconnect reliability. Using x-ray diffraction techniques, both TiN and Al microstructures were analyzed and the (111) intensities of the latter correlated with the electromigration median time to fail (MTTF). The values of the MTTF increased with the Al(111) intensities for the TiN/Ti/SiO2 substrates annealed below 400 °C. A progressive decrease in both the Al(111) texture and MTTF was observed for substrates annealed above this temperature. While the improved Al(111) texture has been attributed to an improved TiN barrier textured in the (111) crystal plane (anneals below 400 °C), a TiO2 layer over the TiN barrier has been found responsible for the degradation of the Al(111) texture and the MTTF for barrier anneals above 400 °C.Type of Medium: Electronic ResourceURL: -
14Ling, T. K. W. ; Leung, W. K. ; Lee, C. C. ; Ng, E. K. W. ; Yung, M. Y. ; Chung, S. S. C. ; Sung, J. J. Y. ; Cheng, A. F. B.
Oxford, UK : Blackwell Science Ltd
Published 2002Staff ViewISSN: 1523-5378Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
15Staff View
ISSN: 1365-2230Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: Summary Individuals with AIDS are at higher risk of developing severe cutaneous adverse drug reactions. We report two AIDS patients with drug-induced toxic epidermal necrolysis (TEN). The suspected drugs were discontinued. Both patients were treated with intravenous human immunoglobulins at a dose of 1 g/kg body weight per day for two consecutive days and both experienced a good outcome. Intravenous immunoglobulin potentially lowers the morbidity and mortality of TEN and shortens the duration of the patient's hospitalization.Type of Medium: Electronic ResourceURL: -
16Staff View
ISSN: 1365-2958Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: BiologyMedicineNotes: Peptide chain termination occurs when a stop codon is decoded by a release factor. In Escherichia coli two codon-specific release factors (RF1 and RF2) direct the termination of protein synthesis, while in eukaryotes a single factor is required. The E. coli factors have been purified and their genes isolated. A combination of protein and DNA sequence data reveal that the RFs are structurally similar and that RF2 is encoded in two reading frames. Frame-shifting from one reading frame to the next occurs at a rate of 50%, is regulated by the RF2-specific stop codon UGA, and involves the direct interaction of the RF2 mRNA with the 3’end of the 16S rRNA. The RF genes are located in two separate operons, with the RF1 gene located at 26.7 min and the RF2 gene at 62.3 min on the chromosome map. Ribosomal binding studies place the RF-binding region at the interface between the ribosomal subunits. A possible mechanism of stop-codon recognition is reviewed.Type of Medium: Electronic ResourceURL: -
17Staff View
ISSN: 1460-2466Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Media Resources and Communication Sciences, JournalismNotes: In the shadow of globalization, international newsmaking remains inherently ethnocentric, nationalistic, and even state-centered. Major U.S. media frame the transfer of Hong Kong from British to Chinese sovereignty in terms of four dominant ideological packages, that is, the United States (a) is a ‘new guardian’ of Hong Kong (b) in an emerging cold war between the West and China, whereas Hong Kong will suffer from the erosion of freedom and democracy under Chinese rule on the one hand, and (d) will be a ‘Trojan horse’ to spearhead China's political and economic change on the other. In sum, the media rally around the ‘star spangled banner’ to bang the democracy drum in consonance with elite consensus and foreign policy. Their news net is narrowly cast. To rescue the handover from being a dull media event, the media seek to hype up their stories. Even the lighthearted pieces flaunt ideological messages.Type of Medium: Electronic ResourceURL: -
18Wu, P.-C. ; Li, Y.-Y. ; Lee, C.-C. ; Chiang, C.-M. ; Su, H.-J. J.
Oxford, UK : Munksgaard International Publishers
Published 2003Staff ViewISSN: 1600-0668Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Architecture, Civil Engineering, SurveyingMedicineType of Medium: Electronic ResourceURL: -
19Wu, P.-C. ; Li, Y.-Y. ; Chiang, C.-M. ; Huang, C.-Y. ; Lee, C.-C. ; Li, F.-C. ; Su, H.-J.
Oxford, UK : Munksgaard International Publishers
Published 2005Staff ViewISSN: 1600-0668Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Architecture, Civil Engineering, SurveyingMedicineType of Medium: Electronic ResourceURL: -
20Szeto, M. L. ; Lee, C. K. ; Yee, Y. K. ; Li, K. F. ; Lee, W. K. ; Lee, C. C. ; Que, T. L. ; Wong, B. C. Y.
Oxford UK : Blackwell Science Ltd
Published 2001Staff ViewISSN: 1365-2036Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: Commercial serological tests for the detection of Helicobacter pylori infection must be locally validated. We evaluated the accuracy of five commercial tests in the Chinese population.〈section xml:id="abs1-2"〉〈title type="main"〉Methods:Serum samples were collected from patients referred for upper endoscopy. Antral biopsies were taken for histological examination and culture of H. pylori. The gold standard for diagnosing H. pylori infection was positive histological staining and/or positive H. pylori culture. The serum samples were tested for H. pylori antibodies using the following tests: (i) Cobas Core Anti-H. pylori EIA; (ii) GAP IgG; (iii) GAP IgM; (iv) H. pylori microwell EIA (Quidel); and (v) Premier H. pylori. The sensitivity, specificity and accuracy of each test was calculated according to the manufacturers’ instructions or according to a new cut-off value.〈section xml:id="abs1-3"〉〈title type="main"〉Results:A total of 158 patients were recruited amongst whom 114 (72%) were H. pylori-positive. Indeterminate results varied from 7% to 19%. The accuracy of the tests varied from 57% to 85%. By using new cut-off values, the accuracy was much improved, ranging from 73.4% to 86.7%.〈section xml:id="abs1-4"〉〈title type="main"〉Conclusions:By defining new cut-off values for the Chinese population, we were able to improve the performance of some of the serology tests. This illustrates the importance of local validation.Type of Medium: Electronic ResourceURL: