Search Results - (Author, Cooperation:C. B. Eom)

Showing 1 - 20 results of 52, query time: 0.22s Refine Results
  1. 1
    Staff View
    Publication Date:
    2018-09-13
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    1098-0121
    Electronic ISSN:
    1095-3795
    Topics:
    Physics
    Keywords:
    Electronic structure and strongly correlated systems
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    H. Lu ; C. W. Bark ; D. Esque de los Ojos ; J. Alcala ; C. B. Eom ; G. Catalan ; A. Gruverman
    American Association for the Advancement of Science (AAAS)
    Published 2012
    Staff View
    Publication Date:
    2012-04-12
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  3. 3
    D. Lee ; H. Lu ; Y. Gu ; S. Y. Choi ; S. D. Li ; S. Ryu ; T. R. Paudel ; K. Song ; E. Mikheev ; S. Lee ; S. Stemmer ; D. A. Tenne ; S. H. Oh ; E. Y. Tsymbal ; X. Wu ; L. Q. Chen ; A. Gruverman ; C. B. Eom
    American Association for the Advancement of Science (AAAS)
    Published 2015
    Staff View
    Publication Date:
    2015-09-19
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Staff View
    Publication Date:
    2011-11-19
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  5. 5
    C. T. Nelson ; P. Gao ; J. R. Jokisaari ; C. Heikes ; C. Adamo ; A. Melville ; S. H. Baek ; C. M. Folkman ; B. Winchester ; Y. Gu ; Y. Liu ; K. Zhang ; E. Wang ; J. Li ; L. Q. Chen ; C. B. Eom ; D. G. Schlom ; X. Pan
    American Association for the Advancement of Science (AAAS)
    Published 2011
    Staff View
    Publication Date:
    2011-11-19
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  6. 6
    G. Cheng ; M. Tomczyk ; S. Lu ; J. P. Veazey ; M. Huang ; P. Irvin ; S. Ryu ; H. Lee ; C. B. Eom ; C. S. Hellberg ; J. Levy
    Nature Publishing Group (NPG)
    Published 2015
    Staff View
    Publication Date:
    2015-05-15
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  7. 7
    Staff View
    Publication Date:
    2016-04-21
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  8. 8
    H. W. Jang ; D. A. Felker ; C. W. Bark ; Y. Wang ; M. K. Niranjan ; C. T. Nelson ; Y. Zhang ; D. Su ; C. M. Folkman ; S. H. Baek ; S. Lee ; K. Janicka ; Y. Zhu ; X. Q. Pan ; D. D. Fong ; E. Y. Tsymbal ; M. S. Rzchowski ; C. B. Eom
    American Association for the Advancement of Science (AAAS)
    Published 2011
    Staff View
    Publication Date:
    2011-02-19
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Staff View
    Publication Date:
    2018-11-30
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Geosciences
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Materials Science, Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  10. 10
    Spielman, S. ; Fesler, K. ; Eom, C. B. ; Geballe, T. H. ; Fejer, M. M. ; Kapitulnik, A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have modifed a fiber-optic gyroscope based on the Sagnac interferometer to measure nonreciprocal phase shifts. The instrument has a sensitivity of better than 1 μrad and is insensitive to any reciprocal phase shifts. Thin films of high-temperature superconductors (HTSC) have been measured in search for nonreciprocal effects below Tc due to "Anyon superconductivity'' ground state. No nonreciprocal phase shift was observed in any of the measured samples.1 The Faraday effect in various magnetic thin films (e.g., EuO) have been measured using the instrument showing a great sensitivity to submonolayers of the materials.〈ks〉
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  11. 11
    Marshall, C. D. ; Tokmakoff, A. ; Fishman, I. M. ; Eom, C. B. ; Phillips, Julia M. ; Fayer, M. D.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Interface selective transient grating experiments are performed on oriented thin films (∼100 nm) of YBa2Cu3O7−x, with MgO and SrTiO3 substrates. The anisotropic YBa2Cu3O7−x thermal diffusivity constants and the thermal boundary resistance between the thin film and substrate are measured. Four different excitation and probe geometries are utilized such that each geometry results in a unique temporal decay. The grating has a significant amplitude on both sides of the film–substrate interface with a grating wave vector parallel to the interface. The four experimental geometries comprise an over-determined system that can be used to confirm the validity of the model assumptions. Numerical fits to the experimental data, using a straightforward diffusive model, are performed to obtain information on thermal diffusivity and to demonstrate the applicability of the technique to monitor anisotropic thermal relaxation processes in thin film–substrate structures.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  12. 12
    Gan, Q. ; Rao, R. A. ; Eom, C. B.

    [S.l.] : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Single domain epitaxial (110) films of SrRuO3 exhibit uniaxial magnetic anisotropy instead of the biaxial anisotropy observed in the bulk material. The magnetic easy axis for the film is along the orthorhombic [010] direction below TC, and it rotates toward the [110] perpendicular direction as temperature decreases. The [100] direction, which is also magnetically "easy" in the bulk, becomes "hard" in the film. X-ray diffraction experiments show that this unique transformation of magnetic anisotropy is related to a distortion from the bulk orthorhombic lattice into a triclinic structure in the epitaxial film, such that the lattice along the [010] direction expands while its [100] counterpart contracts. The distortion appears to arise from rotation and tilt of RuO6 octahedra. The finding indicates that the magnetic anisotropy in epitaxial SrRuO3 films is rooted in the crystalline anisotropy influenced by strong spin–orbit interactions. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  13. 13
    Rao, R. A. ; Lavric, D. ; Nath, T. K. ; Eom, C. B.

    [S.l.] : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The effects of strain relaxation on the crystallographic domain structure and on the magnetic and transport properties of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 (LCMO) thin films have been studied. LCMO films in the thickness range of 100–4000 Å were grown on (001) SrTiO3 and (001) LaAlO3 substrates, which impose an in-plane tensile and an in-plane compressive biaxial stress in the films, respectively. On (001) SrTiO3 substrates, the films can be grown coherently up to a thickness ∼250 Å, then strain relaxation occurs at a thickness of ∼500 Å. In contrast, even the 100 Å film grown on (001) LaAlO3 is partially relaxed, and the critical thickness for complete strain relaxation is ∼750 Å. The very thin films (〈250 Å) show a pure (001)T normal orientation for growth on SrTiO3 and a pure (110)T texture for growth on LaAlO3. As thickness increases, the lattice strain relaxes, resulting in mixed (001)T and (110)T textures for growth on both substrates. Both the Curie and peak resistivity temperatures increase with increasing film thickness, but they do not exhibit a correlation to strain states of the film. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  14. 14
    Eom, C. B. ; Cava, R. J. ; Phillips, Julia M. ; Werder, D. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Epitaxial thin films of a copper-oxide-based isotropic metallic oxide (La8−xSrxCu8O20) and superconducting heterostructures (YBa2Cu3O7/La8−xSrxCu8O20/YBa2Cu3O7) have been fabricated by 90° off-axis sputtering. La8−xSrxCu8O20 is an oxygen-deficient pseudocubic perovskite that exhibits Pauli paramagnetism. X-ray diffraction and cross-sectional transmission electron microscopy reveal the heterostructures to have high crystalline quality and clean interfaces. This material will facilitate fabrication of ideal superconductor–normal-metal–superconductor Josephson junctions with low boundary resistance due to its excellent chemical compatibility and lattice match with cuprate superconductors and will be useful for determining the source of interface resistance in such heterostructures. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  15. 15
    Dessau, D. S. ; Wells, B. O. ; Shen, Z.-X. ; Spicer, W. E. ; Arko, A. J. ; List, R. S. ; Olson, C. G. ; Eom, C. B. ; Mitzi, D. B. ; Kapitulnik, A. ; Geballe, T. H.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have used high-resolution photoemission spectroscopy to search for a proximity effect induced superconducting gap in gold overlayers on c-axis single crystals of Bi2Sr2CaCu2O8 and a-axis thin films of YBa2Cu3O7. These two junction types give us a representative sampling of very well characterized near-ideal interfaces (gold/c-axis Bi2Sr2CaCu2O8) and junctions in which the geometry more strongly favors the existence of the proximity effect but the interfacial quality may not be as ideal (gold/a-axis YBa2Cu3O7). In neither of these junction types did we observe any evidence for a proximity effect induced gap, and we place an upper limit of approximately 5 meV on its existence in the junctions that we have studied.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  16. 16
    Newman, N. ; Char, K. ; Garrison, S. M. ; Barton, R. W. ; Taber, R. C. ; Eom, C. B. ; Geballe, T. H. ; Wilkens, B.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate that in situ off-axis sputtering from a composite target can reproducibly fabricate very high quality YBa2Cu3O7−δ films over large areas of deposition. A significant reduction in the microwave surface resistance, Rs, compared to many previously reported values is found. Rs values at 10 GHz were found to be as low as 20 μΩ at 4.2 K and 450 μΩ at 77 K. A systematic variation of several properties including the transition temperature, critical current density at high magnetic fields, and the c-axis lattice parameter across the 3.8 cm×3.8 cm (14.5 cm2) deposition area was found.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  17. 17
    Rao, R. A. ; Lavric, D. ; Nath, T. K. ; Eom, C. B.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The evolution of three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 films have been studied as a function of film thickness and lattice mismatch with two types of (001) substrates, SrTiO3 and LaAlO3. In-plane and out-of-plane lattice parameters and strain states of the films were measured directly using normal and grazing incidence x-ray diffraction techniques. The unit cell volume of the films is not conserved, and it exhibits a substrate-dependent variation with film thickness. Films grown on SrTiO3 substrates with thickness up to ∼250 Å are strained coherently with a pure (001)T orientation normal to the surface. In contrast, films as thin as 100 Å grown on LaAlO3 show partial relaxation with a (110)T texture. While thinner films have smoother surfaces and higher crystalline quality, strain relaxation in thicker films leads to mixed (001)T and (110)T textures, mosaic spread, and surface roughening. The magnetic and electrical transport properties, particularly Curie and peak resistivity temperatures, also show systematic variations with respect to film thickness. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  18. 18
    Rao, R. A. ; Gan, Q. ; Eom, C. B.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report the deliberately controlled growth of epitaxial metallic oxide SrRuO3 thin films in three distinctly different growth modes. Scanning tunneling microscopy and x-ray diffraction indicate that the growth mechanism for films on exact (001) SrTiO3 substrates is two-dimensional nucleation, which results in a two domain in-plane structure. As the miscut angle of vicinal (001) SrTiO3 substrates is increased, the growth mechanism changes to step flow which leads to single domain thin films. Films on (001) LaAlO3 substrates have an incoherent three-dimensional island growth due to the large lattice mismatch, resulting in a bulk-like lattice. The vast difference in the growth mechanisms of these films leads to a corresponding difference in their electrical transport and magnetic behavior. Such nanoscale control of growth mechanism, surface morphology, and domain structure can be very important in the fabrication of novel perovskite oxide devices. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  19. 19
    Gan, Q. ; Rao, R. A. ; Eom, C. B.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report the effect of both miscut angle (α) and miscut direction (β) of vicinal substrates on the epitaxial growth and domain structure of isotropic metallic oxide SrRuO3 thin films. The thin films have been grown on vicinal (001) SrTiO3 substrates with α up to 4.1° and β up to 37° away from the in-plane [010] axis. Single-crystal epitaxial (110)o SrRuO3 thin films were obtained on vicinal SrTiO3 substrates with a large miscut angle (α=1.9°, 2.1°, and 4.1°) and miscut direction close to the [010] axis. Decreasing the substrate miscut angle or aligning the miscut direction close to the [110] axis (β=45°) resulted in an increase of 90° domains in the plane. The films grown on vicinal substrates displayed a significant improvement in crystalline quality and in-plane epitaxial alignment as compared to the films grown on exact (001) SrTiO3 substrates. Atomic force microscopy revealed that the growth mechanism changed from two-dimensional nucleation to step flow growth as the miscut angle increased. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  20. 20
    Lindberg, P. A. P. ; Soukiassian, P. ; Shen, Z.-X. ; Eom, C. B. ; Lindau, I. ; Spicer, W. E. ; Geballe, T. H.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The electronic structure of bulk, and, for the first time, thin-film samples of the new class of high Tc Bi2Sr2CaCu2O8+δ superconductors, is investigated by photoemission spectroscopy using synchrotron radiation. Ar+ sputtering and Rb deposition result in disrupted Bi O bonds and subsequent change in the valency of Bi, while oxygen adsorption or annealing in oxygen is found to restore the Bi O bonds. The results also show that adsorbates of O2 and/or Rb readily give rise to a number of new oxygen states in the valence band of Bi2Sr2CaCu2O8+δ. The Ar+-sputtered film is found to be more sensitive to adsorbates of O2 and Rb than the scraped bulk sample, as monitored by the Bi 5d core shifts and the oxygen-induced valence-band states.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses