Search Results - (Author, Cooperation:B. Wei)
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1Zhao, L., Zhang, F., Ding, X., Wu, G., Lam, Y. Y., Wang, X., Fu, H., Xue, X., Lu, C., Ma, J., Yu, L., Xu, C., Ren, Z., Xu, Y., Xu, S., Shen, H., Zhu, X., Shi, Y., Shen, Q., Dong, W., Liu, R., Ling, Y., Zeng, Y., Wang, X., Zhang, Q., Wang, J., Wang, L., Wu, Y., Zeng, B., Wei, H., Zhang, M., Peng, Y., Zhang, C.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-03-09Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Medicine, Diseases, MicrobiologyPublished by: -
2Staff View
Publication Date: 2018-03-06Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: spectroscopy, environmental chemistryPublished by: -
3Zhang, C., Zeng, W., Yao, Y., Xu, B., Wei, X., Wang, L., Yin, X., Barman, A. K., Zhang, F., Zhang, C., Song, Q., Liang, W.
The American Society for Pharmacology and Experimental Therapeutics
Published 2018Staff ViewPublication Date: 2018-07-07Publisher: The American Society for Pharmacology and Experimental TherapeuticsPrint ISSN: 0022-3565Electronic ISSN: 1521-0103Topics: MedicinePublished by: -
4Staff View
Publication Date: 2018-01-03Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
5W. Li, B. Wei, Y. Liu, Y. Qian, P. Feng, P. He and B. Mao
Institute of Physics Publishing (IOP)
Published 2018Staff ViewPublication Date: 2018-08-10Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
6Staff View
Publication Date: 2012-06-05Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: DNA, Single-Stranded/*chemical synthesis/*chemistry ; Nanostructures/*chemistry ; *Nucleic Acid Conformation ; SoftwarePublished by: -
7W. Yu, C.-Z. Gao, Y. Zhang, F. S. Zhang, R. Hutton, Y. Zou, and B. Wei
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-03-24Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Atomic and molecular collisions and interactionsPublished by: -
8Y. Zhang, T. Jiang, L. Wei, D. Luo, X. Wang, W. Yu, R. Hutton, Y. Zou, and B. Wei
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-02-06Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Atomic and molecular collisions and interactionsPublished by: -
9Yen, J.-B., Wei, L.-H., Chen, L.-W., Chen, L.-Y., Hung, C.-H., Wang, S.-S., Chang, P.-J.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-02-14Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
10Y. Jiang ; M. Xie ; W. Chen ; R. Talbot ; J. F. Maddox ; T. Faraut ; C. Wu ; D. M. Muzny ; Y. Li ; W. Zhang ; J. A. Stanton ; R. Brauning ; W. C. Barris ; T. Hourlier ; B. L. Aken ; S. M. Searle ; D. L. Adelson ; C. Bian ; G. R. Cam ; Y. Chen ; S. Cheng ; U. DeSilva ; K. Dixen ; Y. Dong ; G. Fan ; I. R. Franklin ; S. Fu ; P. Fuentes-Utrilla ; R. Guan ; M. A. Highland ; M. E. Holder ; G. Huang ; A. B. Ingham ; S. N. Jhangiani ; D. Kalra ; C. L. Kovar ; S. L. Lee ; W. Liu ; X. Liu ; C. Lu ; T. Lv ; T. Mathew ; S. McWilliam ; M. Menzies ; S. Pan ; D. Robelin ; B. Servin ; D. Townley ; W. Wang ; B. Wei ; S. N. White ; X. Yang ; C. Ye ; Y. Yue ; P. Zeng ; Q. Zhou ; J. B. Hansen ; K. Kristiansen ; R. A. Gibbs ; P. Flicek ; C. C. Warkup ; H. E. Jones ; V. H. Oddy ; F. W. Nicholas ; J. C. McEwan ; J. W. Kijas ; J. Wang ; K. C. Worley ; A. L. Archibald ; N. Cockett ; X. Xu ; B. P. Dalrymple
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-06-07Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; Animals ; Fatty Acids, Volatile/metabolism/physiology ; Gene Expression Regulation ; Genome ; Keratins, Hair-Specific/genetics ; Lipid Metabolism/genetics/*physiology ; Molecular Sequence Data ; Phylogeny ; Rumen/metabolism/*physiology ; Sheep, Domestic/classification/*genetics/*metabolism ; Transcriptome ; Wool/growth & developmentPublished by: -
11Yang, T., Zhao, Y. L., Tong, Y., Jiao, Z. B., Wei, J., Cai, J. X., Han, X. D., Chen, D., Hu, A., Kai, J. J., Lu, K., Liu, Y., Liu, C. T.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-11-23Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Materials SciencePublished by: -
12H. P. Wang, M. X. Li, P. F. Zou, X. Cai, L. Hu, and B. Wei
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-12-13Publisher: American Physical Society (APS)Print ISSN: 1539-3755Electronic ISSN: 1550-2376Topics: PhysicsKeywords: Fluid DynamicsPublished by: -
13Yan, Z.-X., Gao, X.-J., Li, T., Wei, B., Wang, P.-P., Yang, Y., Yan, R.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-07-03Publisher: The American Society for Microbiology (ASM)Print ISSN: 0099-2240Electronic ISSN: 1098-5336Topics: BiologyPublished by: -
14M. Maniraj, D. Jungkenn, W. Shi, S. Emmerich, L. Lyu, J. Kollamana, Z. Wei, B. Yan, M. Cinchetti, S. Mathias, B. Stadtmüller, and M. Aeschlimann
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-11-27Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Surface physics, nanoscale physics, low-dimensional systemsPublished by: -
15Zhao, H. W. ; Wei, B. W. ; Liu, Z. W. ; Wang, Y. F.
[S.l.] : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: Recent development of electron cyclotron resonance (ECR) ion sources in China is reviewed. Emphasis is put on high charge state ECR ion sources which have been mainly developed in China by Institute of Modern Physics (IMP). Presently two ECR ion sources built by IMP for highly charged ion beams are put into operation for cyclotrons and atomic physics research. The development of high charge state ECR ion sources at IMP has progressed with a new magnetic field configuration, better condition for extraction of highly charged ions, high mirror magnetic field, large plasma volume, and special techniques to provide extra cold electrons. These techniques greatly enhance the production of highly charged ions from IMP ECR ion sources. So far more than 185 eμA of Ar11+ and 50 eμA of Xe26+ were produced by the IMP ECR ion sources. The metallic ion beam production was tested and the first beam 40Ca11+ was provided to the cyclotrons at IMP. The beam intensity of 40Ca11+ could reach 130 eμA. The next part of this article will report the latest progress of 2.45 GHz ECR ion sources in China. A 2.45 GHz compact permanent magnet proton ion source was designed and constructed by IMP. A new microwave feeding system is applied on this ion source. The ion source is able to deliver 90 mA of mixed ion beam (H1++H2++H3+) after preliminary commissioning. The article also mentions a small 2.45 GHz ECR ion source which was built by Sichuan University and used for industry applications. The dependence of plasma density and electron temperature on radio frequency power, neutral gas pressure, and different microwave windows was measured by a Langmuir probe on this ion source. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Surface modification of magnetic recording heads by plasma immersion ion implantation and depositionKomvopoulos, K. ; Wei, B. ; Anders, S. ; Anders, A. ; Brown, I. G.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Plasma immersion ion implantation and deposition is a novel process for surface modification. By combining plasma deposition and ion implantation and using filtered vacuum arc plasmas, thin film formation, direct and recoil ion implantation, and ion-beam-assisted intermixing of the film and substrate can be accomplished simultaneously. The implications of this technique in tribology of magnetic recording media have been investigated experimentally. Surfaces of Al2O3-TiC heads were modified with silver, carbon, and titanium ions at doses of 3×1016 ions/cm2 and mean implantation energies between 2.0 and 4.2 keV. Simulation results indicated that the modified regions exhibited high concentrations of implanted species in the top 2–3 nm, atomically mixed interfaces, and thicknesses between 10 and 25 nm. Surface imaging with an atomic force microscope and nanoindentation testing revealed that the modified heads possessed smoother topographies and increased hardnesses. Contact start-stop and continuous sliding experiments with modified heads and carbon-coated magnetic rigid disks and microscopy observations demonstrated that significant enhancement of the friction and wear characteristics can be achieved with the present surface modification technique. The possible reasons for the improved tribological behavior and the predominant mechanisms during contact start-stop and continuous sliding are interpreted in light of the obtained experimental results.Type of Medium: Electronic ResourceURL: -
17Komvopoulos, K. ; Wei, B. ; Anders, S. ; Anders, A. ; Brown, I. G.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
18Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A systematic experimental investigation was carried out to understand the effects of nitrogenation on the microstructure and wear durability of thin amorphous-carbon films. The films were fabricated with 0%, 10%, 15%, 20%, 30%, 40%, and 50% N2 in the sputter gas. Microstructure properties were characterized using Rutherford backscattering spectroscopy, electrical resistance, Raman spectroscopy, and x-ray photoelectron spectroscopy. Nanohardness and scratch wear resistance of the films were studied with an atomic force microscope equipped with a diamond tip. The head–disk interface tribological properties of the films were tested with industrial standard contact–start–stop wear instrumentation. The results indicate that the introduction of nitrogen into the carbon film increases the film lattice disorder and allows for the formation of carbon–nitrogen single, double, and triple bonds. The nitrogen atomic concentration in the film, electrical resistance, and the ratio of carbon–nitrogen bonds to carbon–carbon bonds increase with increasing N2 in the sputter gas. A significant addition in C(Triple Bond)N bond percentage is observed when the N2 exceeds 30% in the sputter gas. Both the nanohardness and scratch wear resistance of the carbon film can be significantly improved by incorporating an optimized nitrogen concentration in the film. In this study, the film processed with 30% N2 showed the highest nanohardness and wear resistance. The degraded nanowear resistance for the films processed with 40% and 50% N2 is attributed to the significant addition of C(Triple Bond)N bonds. Within a wide process range (15%–30% N2), the films exhibit excellent tribological performances at the head–disk interface. The wear mechanisms from the contact–start–stop wear tests are interpreted based on the understanding of film structures and film mechanical properties. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Rapid eutectic growth in a highly undercooled liquid was accomplished by containerlessly processing Co–Mo eutectic alloy in a drop tube. The containerless state during free fall produces substantial undercoolings up to 391 K (0.24TE) in falling droplets before crystallization. The eutectic growth mechanism is found to transform from lamellar eutectic to anomalous eutectic if the droplet undercooling exceeds a critical value of about 56 K, which coincides well with the lower boundary of the calculated eutectic coupled zone. Although the reduced gravity level of 10−2–10−3 g has little influence on this eutectic growth mechanism transition, it frequently results in the formation of spherical anomalous eutectic grains owing to the symmetrical temperature field and concentration field surrounding solid/liquid interface. Both theoretical analyses and experimental observations indicate that the independent nucleation and cooperative branched growth of two eutectic phases are responsible for the eutectic growth mechanism transition. The three-dimensional structural model of anomalous eutectic grain is a two-phase composite dendrite. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Zhang, Z. J. ; Wei, B. Q. ; Ramanath, G. ; Ajayan, P. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report highly substrate-site selective growth of carbon nanotubes by chemical vapor deposition from precursors of ferrocene and xylene mixtures. The technique allows us to grow well-aligned multiwalled carbon nanotubes preferentially on the SiO2 regions of patterned SiO2/Si substrates prepared by conventional lithography. This eliminates the catalyst predeposition step in the fabrication process. This simple approach may also be applied to build large-scale networks of organized nanotubes on planar substrates. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: