Search Results - (Author, Cooperation:B. Lim)
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1Latest Papers from Table of Contents or Articles in PressTan, C. S. H., Go, K. D., Bisteau, X., Dai, L., Yong, C. H., Prabhu, N., Ozturk, M. B., Lim, Y. T., Sreekumar, L., Lengqvist, J., Tergaonkar, V., Kaldis, P., Sobota, R. M., Nordlund, P.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-03-09Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Biochemistry, Molecular BiologyPublished by: -
2Latest Papers from Table of Contents or Articles in PressSofia Caria, Charlene M. Magtoto, Tinaz Samiei, Marta Portela, Krystle Y. B. Lim, Jing Yuan How, Bryce Z. Stewart, Patrick O. Humbert, Helena E. Richardson, Marc Kvansakul
The American Society for Biochemistry and Molecular Biology (ASBMB)
Published 2018Staff ViewPublication Date: 2018-03-24Publisher: The American Society for Biochemistry and Molecular Biology (ASBMB)Print ISSN: 0021-9258Electronic ISSN: 1083-351XTopics: BiologyChemistry and PharmacologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressGruszczyk, J., Kanjee, U., Chan, L.-J., Menant, S., Malleret, B., Lim, N. T. Y., Schmidt, C. Q., Mok, Y.-F., Lin, K.-M., Pearson, R. D., Rangel, G., Smith, B. J., Call, M. J., Weekes, M. P., Griffin, M. D. W., Murphy, J. M., Abraham, J., Sriprawat, K., Menezes, M. J., Ferreira, M. U., Russell, B., Renia, L., Duraisingh, M. T., Tham, W.-H.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-01-05Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: MicrobiologyPublished by: -
4Latest Papers from Table of Contents or Articles in PressJohn T. Randolph, A. Chris Krueger, Pamela L. Donner, John K. Pratt, Dachun Liu, Christopher E. Motter, Todd W. Rockway, Michael D. Tufano, Rolf Wagner, Hock B. Lim, Jill M. Beyer, Rubina Mondal, Neeta S. Panchal, Lynn Colletti, Yaya Liu, Gennadiy Koev, Warren M. Kati, Lisa E. Hernandez, David W. A. Beno, Kenton L. Longenecker, Kent D. Stewart, Emily O. Dumas, Akhteruzzaman Molla and Clarence J. Maring
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-01-26Publisher: American Chemical Society (ACS)Topics: Chemistry and PharmacologyPublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2012-08-31Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; *Cellular Reprogramming ; DNA-Binding Proteins/*metabolism ; *Epigenesis, Genetic ; Humans ; Induced Pluripotent Stem Cells/*cytology/*metabolism ; Poly(ADP-ribose) Polymerases/*metabolism ; Proto-Oncogene Proteins/*metabolismPublished by: -
6Latest Papers from Table of Contents or Articles in PressL. Zhang ; L. Prak ; V. Rayon-Estrada ; P. Thiru ; J. Flygare ; B. Lim ; H. F. Lodish
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-06-12Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Cell Count ; *Cell Division/drug effects ; Cell Lineage ; Down-Regulation ; Erythroid Precursor Cells/*cytology/*metabolism ; Erythropoiesis/genetics ; Gene Knockdown Techniques ; Glucocorticoids/pharmacology ; Mice ; RNA, Messenger/genetics/metabolism ; RNA-Binding Proteins/metabolism ; Receptors, Glucocorticoid/agonists/metabolism ; Stress, Physiological ; Tristetraprolin/deficiency/genetics/*metabolismPublished by: -
7Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2013-09-21Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Cellular Reprogramming/*physiology ; Female ; Humans ; Induced Pluripotent Stem Cells/*physiology ; Male ; *Models, BiologicalPublished by: -
8Latest Papers from Table of Contents or Articles in PressM. H. Oh ; T. Yu ; S. H. Yu ; B. Lim ; K. T. Ko ; M. G. Willinger ; D. H. Seo ; B. H. Kim ; M. G. Cho ; J. H. Park ; K. Kang ; Y. E. Sung ; N. Pinna ; T. Hyeon
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-05-25Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Cobalt/chemistry ; Ferric Compounds/*chemistry ; Manganese Compounds/*chemistry ; Metal Nanoparticles/*chemistry/*ultrastructure ; Microscopy, Electron, Transmission ; Oxides/*chemistry ; Perchlorates/chemistry ; Tin Compounds/chemistryPublished by: -
9Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2015-05-23Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; *Chimera ; Female ; Humans ; Male ; Pluripotent Stem Cells/*cytologyPublished by: -
10Articles: DFG German National LicensesLim, B. S. ; Pritchet, W. C. ; Rodbell, K. P. ; Tu, K. N.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesNowick, A. S. ; Vaysleyb, A. V. ; Lim, B. S.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The existence of a regime of constant-loss (independent of frequency) behavior was reported earlier, based on ac conductivity measurements at low temperatures and/or high frequencies, for a wide range of ionically conducting crystalline materials and glasses. Here new results in support of this concept are presented. First, it is shown that the example of NaCl:Zn2+ which Macdonald examined in detail [J. Appl. Phys. 75, 1059 (1994)] is a poor one to serve as a test of constant-loss behavior. Additional cryogenic measurements, and a more detailed analysis of both the real and imaginary parts of the complex dielectric constant for materials such as crystalline CaTiO3:Al3+ and Na2O⋅3SiO2 glass are shown to support the conclusion that constant-loss behavior occurs at low temperatures for a wide range of materials.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesYang, J. W. ; Chen, Q. ; Sun, C. J. ; Lim, B. ; Anwar, M. Z. ; Khan, M. Asif ; Temkin, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: In this letter we report the deposition of high quality GaN-InGaN double-heterostructure pn junctions over (111) spinel substrates using low-pressure metalorganic chemical vapor deposition. A ten-period undoped GaN-In0.1Ga0.9N multiple quantum well was used for the active region. Mesa-type light-emitting diode (LED) structures were fabricated which under forward bias exhibited only strong band-edge electroluminescence. The spectral emission was centered at 385 nm and had a linewidth of 15 nm. This is similar to what is measured for similar LED structures over sapphire substrates. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesLim, B. S. ; Ma, E. ; Nicolet, M-A. ; Natan, M.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have investigated the growth kinetics and identified the moving species during Co2Si formation by rapid thermal annealing (RTA). For the kinetics study, samples which consisted of a thin Co film on an evaporated Si substrate were used. To study which species moves, samples imbedded with two very thin Ta markers were employed. Upon RTA, only one silicide phase, Co2Si, was observed to grow before all Co was consumed. The square root of time dependence and the activation energy of about 2.1±0.2 eV were observed during the Co2Si formation up to 680 °C. The marker study indicated that Co is the dominant mobile species during Co2Si formation by RTA. We conclude that Co2Si grows by the same mechanisms during RTA and conventional thermal annealing.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesLim, B. S. ; Ma, E. ; Nicolet, M-A. ; Nathan (Natan), M.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: A resistor composed of a piece of Si wafer and two thin silver wires attached to it, can reliably sense the temperature during rapid thermal annealing (RTA). As constant electric current passes through the Si piece, the resistivity change of Si with temperature produces a voltage signal that can be readily calibrated and converted to an actual temperature of the samples. An accuracy better than ±10 °C is achieved between 300° and 600 °C.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesOsinsky, A. ; Gangopadhyay, S. ; Lim, B. W. ; Anwar, M. Z. ; Khan, M. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report solar-blind AlxGa1−xN photovoltaic detectors with cutoff wavelengths as short as 290 nm. Mesa geometry devices of different active areas are fabricated and characterized for spectral responsitivity, speed, and noise performance. The responsivity of the devices near the cutoff wavelength is 0.07 A/W. The detector noise is found to be 1/f limited, with a noise equivalent power of 6.6×10−9 W over the total response bandwidth of 100 kHz. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesLim, B. W. ; Chen, Q. C. ; Yang, J. Y. ; Asif Khan, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: This letter reports on the fabrication and characterization of visible-blind ultraviolet photoconductors using single-crystal AlxGa1−xN layers deposited on basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, the long-wavelength cutoff can be varied from 350 to 240 nm. Photoresponsitivities as high as several hundred amperes per watt were measured with 10 μm interelectrode spacing. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesChen, Q. ; Yang, J. W. ; Osinsky, A. ; Gangopadhyay, S. ; Lim, B. ; Anwar, M. Z. ; Asif Khan, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n−/n+-GaN structures grown over sapphire substrates. Spectral responsivity measurements were made using illumination through the UV transparent Schottky barrier metal. A responsitivity as high as 0.18 A/W was measured for wavelengths shorter than the absorption edge of GaN. The detector speed was RC limited and the fall time was 118 ns. The 1/f noise is identified to be the main noise contribution. At 300 Hz, we measure the noise equivalent power at less than 4×10−9 W. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesSun, C. J. ; Yang, J. W. ; Lim, B. W. ; Chen, Q. ; Anwar, M. Zubair ; Khan, M. Asif
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on the fabrication and characterization of Mg-doped green light emitting diodes (LEDs) over cubic (111) MgAl2O4 substrates with a very strong impurity band electroluminescence. A 0.2-micron-thick Mg-doped In0.13Ga0.87N layer was used in the active region of mesa type LED structures. The emission spectrum was centered at 510 nm (green) with a full-width at half-maximum of 60 nm. At a forward bias current of 20 mA the output power and the external quantum efficiency were about 200 μW and 0.3%. The origin of green light in the Mg-doped In0.13Ga0.87N layer has also been studied by time resolved photoluminescence. Our study demonstrates impurity band LEDs to be a viable alternative to band edge emission green LEDs with high indium mole fractions in the active region. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesSun, C. J. ; Yang, J. W. ; Chen, Q. ; Lim, B. W. ; Anwar, M. Zubair ; Khan, M. Asif ; Temkin, H. ; Weismann, D. ; Brenner, I.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: In this letter we report the results of room-temperature continuous wave and pulsed photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN–GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We suggest the use of vertical cavity stimulated emission instead of spontaneous emission peak position as a good measure of the InGaN band edge. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesAsif Khan, M. ; Sun, C. J. ; Yang, J. W. ; Chen, Q. ; Lim, B. W. ; Zubair Anwar, M. ; Osinsky, A. ; Temkin, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report an optically pumped multiple-quantum-well laser of InGaN–GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm2 is measured in a 400-μm-long cavity at 150 K. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: