Search Results - (Author, Cooperation:B. Chatterjee)
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1Latest Papers from Table of Contents or Articles in PressR. Roy, A. Gammal, M. C. Tsatsos, B. Chatterjee, B. Chakrabarti, and A. U. J. Lode
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-04-25Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Matter waves and collective properties of cold atoms and moleculesPublished by: -
2Latest Papers from Table of Contents or Articles in PressMeenu Thakur, B. R. Behera, Ruchi Mahajan, Gurpreet Kaur, Priya Sharma, Kushal Kapoor, Kavita Rani, P. Sugathan, A. Jhingan, N. Saneesh, R. Dubey, A. Yadav, A. Chatterjee, M. B. Chatterjee, Neeraj Kumar, S. Mandal, S. K. Duggi, A. Saxena, S. Kailas, and Santanu Pal
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-07-11Publisher: American Physical Society (APS)Print ISSN: 0556-2813Electronic ISSN: 1089-490XTopics: PhysicsKeywords: Nuclear ReactionsPublished by: -
3Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2012-07-06Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Aging ; Cultural Diversity ; Environment ; Food Habits ; Humans ; Life Style ; *MetagenomePublished by: -
4Latest Papers from Table of Contents or Articles in PressY. Li ; N. T. Klena ; G. C. Gabriel ; X. Liu ; A. J. Kim ; K. Lemke ; Y. Chen ; B. Chatterjee ; W. Devine ; R. R. Damerla ; C. Chang ; H. Yagi ; J. T. San Agustin ; M. Thahir ; S. Anderton ; C. Lawhead ; A. Vescovi ; H. Pratt ; J. Morgan ; L. Haynes ; C. L. Smith ; J. T. Eppig ; L. Reinholdt ; R. Francis ; L. Leatherbury ; M. K. Ganapathiraju ; K. Tobita ; G. J. Pazour ; C. W. Lo
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-03-26Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Cilia/genetics/*pathology/physiology/ultrasonography ; DNA Mutational Analysis ; Electrocardiography ; Exome/genetics ; Genes, Recessive ; Genetic Testing ; Heart Defects, Congenital/*genetics/*pathology/ultrasonography ; Humans ; Male ; Mice ; Mice, Inbred C57BL ; Mutation/genetics ; Signal TransductionPublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2015-08-21Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Federal Government/*history ; History, 20th Century ; History, 21st Century ; India ; Research Personnel/history ; Science/historyPublished by: -
6Articles: DFG German National LicensesChatterjee, B. K. ; Johnsen, R.
College Park, Md. : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: We derive a simple estimating formula for rate coefficients of three-body ion atom association in gases and compare its predictions to experimental data on ion association and three-body radiative charge transfer reactions of singly- and doubly-charged rare-gas ions. The formula appears to reproduce most experimental data quite well. It may be useful for estimating the rates of reactions that have not been studied in the laboratory.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesChatterjee, B. K. ; Johnsen, R.
College Park, Md. : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyType of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesStaff View
ISSN: 1365-2494Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, NutritionType of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesStaff View
ISSN: 1365-2494Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, NutritionNotes: Experiments were conducted to analyse the effect of 3-year-old grass plots, under a cut-and-carry system, on the yields of maize and groundnut crops, and at the same time to compare the relative importance of the water-stable aggregates and the nitrogen status of the soil. The N reserves, organic carbon and water-stable aggregate contents of soils were higher under grass plots than in the ploughed-up-fallow plots. Maize yields showed a close correlation with total soil N, mineralized N after incubation for 20 days, and water-stable aggregate contents; groundnut yields showed close correlation only with water-stable aggregates. The effects of the variations in soil N and in the water-stable aggregate content of the soil on the yields of maize and groundnuts were examined by multiple regression analysis of data from a large number of plots.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: In previous work we reported on the stable passivation of dislocations in InP/GaAs heterostructures by plasma hydrogenation (Chatterjee et al., Appl. Phys. Lett. vol. 65, p. 58, 1994). In this article we investigate and compare the trapping kinetics and general trapping properties of dislocations in strain relaxed p-InP grown on GaAs by metalorganic chemical vapor deposition prior to and after hydrogen passivation using deep level transient spectroscopy (DLTS) and current-voltage-temperature (I-V/T) measurements to determine the complete role of hydrogen passivation in these heterostructures. Three hole traps, T1A, T1B, and T2, were detected and attributed to dislocations in heteroepitaxial p-InP which displayed the logarithmic capture kinetics, extended dependence on fill pulse time, and broadened DLTS features expected for dislocation related traps. Quantitative analysis of the DLTS characteristics revealed progressive asymmetry in DLTS peak shape, an increase in characteristic peak width, and a decrease in activation energy as fill pulse time is increased until saturation values were reached.These observations are explained on the basis of a distribution or band of energy states for each trap resulting from the interaction of electrically active sites either between closely spaced dislocations or along dislocation cores within the strain-relaxed InP. For fill pulse times increasing from 1 μs to 10 ms, activation energies for T1A decreased monotonically from 0.80 to 0.65 eV, for T1B from 0.56 to 0.45 eV, and for T2 from 0.45 to 0.35 eV, with saturation occurring at the upper and lower limits for each trap, which indicates a qualitative measure of the energy spread for each trap. Plasma hydrogenation was not only found to passivate dislocations by reducing the trap concentration from ∼6×1014 to ∼3×1012 cm−3 for a 2 h exposure, but also strikingly altered their basic trapping properties. The qualitative measure of energy spread for the T1A and T2 traps were narrowed from ∼100 to 150 meV to ∼20 to 30 meV after a 2 h hydrogen exposure, whereas T1B was not detected after passivation. In addition, a simultaneous reduction in fill pulse saturation time, DLTS peak broadening, and peak shift as a function of hydrogen exposure time were observed. These observations suggest that hydrogen passivation modifies the dislocation trapping characteristics toward a more point defectlike behavior due to an increase in the average spacing between electrically active dislocation sites. This in turn reduces the interactions between these sites and narrows the distribution of states within each defect band. Further, reverse bias I-V/T measurements revealed that the near midgap trap T1A, which was found to dominate the space charge generation current prior to passivation, is no longer dominant after hydrogen passivation. Instead a 2 h hydrogen treatment shifted the dominant center to an activation energy which more closely matches the shallow T2 level. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Hydrogen passivation of InP layers grown on lattice-mismatched substrates can achieve thermally stable deactivation of dislocation-related deep levels, making this a promising process for improving the performance of heteroepitaxial InP space solar cells. However, in addition to dislocation-related defects, interstitial Zn (Zni) defects that are characteristic of Zn-doped InP and which form deep donor states within the InP band gap, are important considerations for optimizing the electronic quality of these layers. Here, we show that hydrogen forms complexes with and deactivates Zni donor states within Zn-doped InP grown by metalorganic chemical vapor deposition. A combination of photoluminescence (PL), electrochemical capacitance–voltage dopant profiling, secondary ion mass spectroscopy and current–voltage (I–V) measurements are applied to a set of samples receiving systematic hydrogenation and annealing treatments. We find that the deactivation of Zni deep donors, as detected by monitoring the evolution of the donor–acceptor transition using PL measurements, causes an increase of ∼50% in the net acceptor concentration of heavily Zn-doped heteroepitaxial InP by elimination of the acceptor compensation effect due to active Zni donors. Analysis of I–V characteristics indicates that Zni passivation sharply reduces depletion region recombination and shunt currents within heteroepitaxial diodes, causing an increase in the diode turn-on voltage from 680 to 960 mV. Subsequent annealing above 500 °C reactivates the Zni defects, resulting in a systematic increase in doping compensation as well as a decrease in VTO toward the original, as-grown value. A study of the reactivation kinetics for the H–Zni complex reveals a greater thermal stability than that of H–Zn acceptor complexes but less than that of H-dislocation complexes in InP, with an estimated dissociation energy for the H–Zni complex of 2.3 eV. While these effects are observed for both homoepitaxial and heteroepitaxial Zn-doped layers, the effect is far more pronounced for the heteroepitaxial layers due to the relatively high Zni concentration in the latter. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesSieg, R. M. ; Chatterjee, B. ; Ringel, S. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Heteroepitaxial InP films grown on GaAs substrates by metalorganic chemical vapor deposition are demonstrated to have a higher concentration of zinc occupying interstitial sites than do equivalent homoepitaxial InP layers. A zinc interstitial-related donor-to-acceptor photoluminescence peak is observed in heteroepitaxial InP films which is absent in the homoepitaxial sample spectra. Capacitance–voltage measurements yield a lower hole concentration in the heteroepitaxial layers versus the homoepitaxial layers, which is attributable to a higher fraction of zinc in interstitial sites within the heteroepitaxial layers. Additionally, the hole concentration of the heteroepitaxial layers is found to be lower near the heterojunction as compared with the film surface region, correlating with a higher dislocation density near the heterojunction as seen by transmission electron microscopy. We conclude that the increased zinc interstitial concentration and the reduced hole concentration are due to dislocation-zinc solute interactions. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesChatterjee, B. ; Ringel, S. A. ; Sieg, R. ; Hoffman, R. ; Weinberg, I.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The effects of hydrogenation on the properties of Zn-doped InP/GaAs heterostructures grown by metalorganic chemical vapor deposition were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and photoluminescence. Significant improvements in leakage current and breakdown voltage in InP diodes on GaAs were observed after a 2 h hydrogen plasma exposure at 250 °C. DLTS indicated a corresponding reduction in total trap concentration from ∼6×1014 to ∼3×1012 cm−3 at a depth of ∼1.5 μm below the surface. The Zn dopants were completely reactivated by a subsequent 5 min 400 °C anneal without degradation of the reverse current or reactivation of the deep levels. Anneals in excess of 580 °C were necessary to reactivate the deep levels and degrade the leakage current to their original values, indicating the passivation of threading dislocations by hydrogen, and the existence of a wide temperature window for post-passivation processing.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice-mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p-type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect-related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesChatterjee, B. K. ; Johnsen, R.
College Park, Md. : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyType of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesSONG, C. S. ; JUNG, M. H. ; SUPAKAR, P. C. ; CHEN, S. ; VELLANOWETH, R. L. ; CHATTERJEE, B. ; ROY, A. K.
Oxford, UK : Blackwell Publishing Ltd
Published 1995Staff ViewISSN: 1749-6632Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Natural Sciences in GeneralType of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesDheandhanoo, S. ; Chatterjee, B. K. ; Johnsen, R.
College Park, Md. : American Institute of Physics (AIP)
Published 1985Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: Rate coefficients for the oxidation reactions of zirconium ions with oxygen, nitric oxide, and carbon dioxide have been determined in the near-thermal energy range (0.04 to about 0.4 eV) using a selected-ion drift apparatus. The reactions are found to proceed with large rate coefficients [∼5(−10)cm3/s at 300 K]. At elevated ion energies the reactions with NO and CO2 exhibit smaller rates. The secondary oxidation reactions of ZrO+ ions with the same reactants have rate coefficients about two orders of magnitude smaller than those for the first oxidation steps. The discharge ion source used to produce the zirconium ions in these experiments is described in some detail.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 0167-4781Keywords: (Rat liver) ; Aging ; Maturation ; Nuclear matrix ; Transcription ; α"2"u-Globulin gene familySource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyMedicinePhysicsType of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 0167-4781Keywords: (Rat) ; Androgenic induction ; Preprotein processing ; Urinary protein ; mRNA translation ; α"2"u-GlobulinSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyMedicinePhysicsType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 0006-291XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: