Search Results - (Author, Cooperation:A. Powell)

2018-01-24

Wiley-Blackwell

0007-1048

1365-2141

Medicine

2018-09-21

American Physical Society (APS)

2160-3308

Physics

2018-07-06

American Society of Hematology (ASH)

0006-4971

1528-0020

Biology

Medicine

Red Cells, Iron, and Erythropoiesis

2013-10-12

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

Agriculture/*history ; Animal Feed/*history ; Animals ; Animals, Domestic ; *Anthropology ; Base Sequence ; DNA, Mitochondrial/genetics/history ; Europe ; *Evolution, Molecular ; History, Ancient ; Humans ; Molecular Sequence Data

2013-09-14

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

Animals ; Apoptosis Regulatory Proteins/genetics ; Calcium-Binding Proteins/genetics ; Caspases/*biosynthesis/genetics ; Cross-Priming ; Enzyme Activation ; Francisella ; Gram-Negative Bacterial Infections/immunology ; Lipid A/*immunology ; Mice ; Mice, Inbred C57BL ; Poly I-C/immunology ; Salmonella ; Salmonella Infections/immunology ; Shock, Septic/*immunology ; Toll-Like Receptor 4/genetics/*immunology

2018-07-18

American Heart Association (AHA)

1941-9651

1942-0080

Medicine

Congenital Heart Disease, Remodeling, Magnetic Resonance Imaging (MRI)

1089-7550

AIP Digital Archive

Physics

Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements at various temperatures have been used to characterize defects in Si-doped (Ga1−xAlx)1−yInyAs materials for x=0.3 and different values of y (0, 0.005, and 0.07). We only detect DX centers, those associated with the doping impurity (Si), but also others associated with Te and, eventually, Sn not introduced intentionally. When the experimental conditions are chosen to obtain exponential transients, the shape of the DLTS spectrum and its variation with the filling pulse duration can be accounted for by this contamination; i.e., no sign of the so-called alloying effect is detected.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

A series of unintentionally doped Ga1−xAlxAs epitaxial layers grown by molecular beam epitaxy, having various Al compositions (0.15, 0.18, and 0.29), have been Li diffused at 300 °C. Capacitance–voltage techniques show that the initial n-type doping concentrations (of the order of 1016 cm−3) increase after diffusion by typically a factor 5 to 10 demonstrating that isolated Li interstitials do exist and behave as donors. However, secondary-ion mass spectroscopy measurements show that the material contains 1019–1020 Li cm−3, which indicates that a large fraction of the Li impurities is not electrically active. Thus Li also produces defects as revealed by the fact that free electrons are frozen in the diffused layers below 77 K. Search for the existence of Li associated DX centers deep defects related to the donor impurities has been performed by deep level transient spectroscopy. Only the DX centers present before diffusion, i.e., associated with residual donor impurities, are detected in the layer of 0.29 Al fraction. This implies that either Li donors do not induce the existence of DX centers or electron emission from Li DX centers occurs below 77 K.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The properties of deep donor states (DX centers) in III-V alloys are discussed in relation to their influence on device characteristics and performance. The techniques to avoid or minimize such deleterious effects in AlGaAs-based devices are discussed, along with their physical basis, and some guidelines for improved III-V device design are established. New results about the benefits of proper donor selection, the role of In alloying, the advantage of δ doping in layers and in modulation-doped devices, and the use of AlInAs and InGaP as alternative wide band-gap III-V alloys are presented.

Electronic Resource

1365-2230

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Melanoma in situ of the lentigo maligna (LM) type is a precursor lesion of LM melanoma. It most commonly occurs in elderly individuals, on the head and neck. Although surgical excision is recommended, this may not be practical for large lesions at cosmetically sensitive sites. In addition, histological changes commonly extend beyond the clinical margins of the lesion. This study describes the use of imiquimod 5% cream as topical immunotherapy in the management of lentigo maligna. Twelve patients (average age 63 years, 10 female), of biopsy-proven facial LM were treated with topical imiquimod, three times a week for 6 weeks. In the absence of an inflammatory response, patients were asked to apply the treatment daily. Seven showed clearance of the LM clinically and histologically. A further three patients showed clearance histologically with persisting pigmentation due to dermal melanin and melanophages. Thus, 10 of 12 patients cleared with no relapse after a median follow-up of 6 months. Two patients failed to respond to imiquimod and their lesions were treated with surgical excision. Imiquimod was well tolerated, except in three patients who experienced an intense inflammatory response. Two of these also developed secondary infection. Imiquimod 5% cream appears to offer a potential noninvasive method for the treatment of lentigo maligna.

Electronic Resource

1365-2230

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Collagen XVII, or BP180, is a collagenous transmembrane protein and a structural component of the dermoepidermal anchoring complex. Molecular studies reveal that it has a globular cytosolic amino-terminal domain and flexible-rod extracellular carboxyterminal domain. The extracellular portion of collagen XVII is constitutively shed from the cell surface by ADAMs (proteinases that contain adhesive and metalloprotease domains). Cell biological analyses suggest that collagen XVII functions as a cell–matrix adhesion molecule through stabilization of the hemidesmosome complex. This concept is supported by investigations into human diseases of the dermoepidermal junction, in which collagen XVII is either genetically defective or absent (as in some forms of nonlethal junctional epidermolysis bullosa). Autoantibodies against collagen XVII (BP180) are seen in bullous pemphigoid, pemphigoid gestationis, mucous membrane pemphigoid, linear IgA disease, lichen planus pemphigoides and pemphigoid nodularis. In vivo and in vitro studies provide evidence for a pathogenic role of these autoantibodies, and suggest that the serum level and epitope specificity of these antibodies influences disease severity and phenotype. This review summarizes the structural and biological features of collagen XVII and its role in diseases of the basement membrane zone.

Electronic Resource

1365-2230

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

An epitope is an antigenic determinant, or a site on the surface of an antigenic molecule, to which a single antibody binds. Epitope spreading (ES) refers to the development of an immune response to epitopes distinct from, and noncross-reactive with, the disease-causing epitope. Diversification, or the ability of the immune system to attack multiple targets on a pathogen has obvious advantages. Here we review some of the evidence regarding its role in autoimmunity, in humans and in animal disease models. We consider the implications of ES on the development of highly specific therapies for autoimmune disease. We stress that pathogenic ES probably occurs in the context of inherent abnormalities in control mechanisms for the prevention of autoimmunity or other genetic predisposing factors.

Electronic Resource

1365-2230

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Group IV semiconductor alloy systems offer promise as variable band gap alloys compatible with Si technology. Binary, ternary, and quaternary group IV alloys were grown by molecular beam epitaxy on Si substrates. The fundamental absorption edge was measured by Fourier transform infrared spectroscopy to obtain the optical band gap of the alloys, and the position of the fundamental absorption edge was observed to depend on the experimentally measured alloy composition. Our results indicate a variety of Si-rich group IV alloys with various band gaps are experimentally producible. © 1996 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The relaxation in Si/SiGe bilayers grown on top of SIMOX wafers has been studied. By judiciously choosing the thickness ratios of the Si and SiGe, it is possible to relax the bilayer through the glide of dislocations exclusively in the Si layer, leaving the top SiGe layer relaxed and (mostly) dislocation free. This approach is completely different from previously proposed ways of reducing the number of threading dislocations in SiGe films because at no stage during the relaxation process are new threads introduced in the top SiGe layer. It is shown that the Si/SiGe bilayer behaves as a free-floating foil constrained to remain flat by the substrate, even at temperatures as low as 700 °C. The relaxation is shown to proceed until the strain left in the Si layer is too low for dislocations to glide. When the temperature is raised to 1050 °C, interdiffusion between the two layers forces the dislocation network to move into the SiGe through glide. The original network of 60° dislocations can then react to form a network of edge dislocations, which had never been observed before in this system. At such high temperature, glide is no longer the limiting factor for relaxation, and almost complete relaxation is attained.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Using spectroscopic ellipsometry, we measured the pseudodielectric function of Si1−x−yGexCy alloys (0≤x≤0.48,0≤y≤0.05) grown on Si(001) using molecular beam epitaxy. For pseudomorphically strained layers, the energy shifts of the E1, E1+Δ1, E0′, and E2 transitions are determined by line shape analysis and are due to alloy composition effects, as well as hydrostatic and shear strain. We developed expressions for hydrostatic and shear shift from continuum elasticity theory, using deformation potentials for Si and Ge, for biaxial stress parallel to the (001) growth plane in a diamond or zinc blende-type crystal and applied this to the ternary Si–Ge–C alloy. The energies of E1 and its spin-orbit split partner E1+Δ1 agree fairly well with theory. The E2 transitions in Si1−xGex at around 4.3 eV depend linearly on Ge concentration. In case of relaxed layers, the E1 and E1+Δ1 transitions are inhomogeneously broadened due to the influence of misfit and threading dislocations. For a silicon cap on top of a dislocated, relaxed SiGe layer, we recovered the bulk Si dielectric function. © 1996 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

The ionization processes of Se-related DX centers have been studied in AlGaAs Schottky diodes under high reverse bias conditions. A spectroscopy technique that provides directly the free-electron concentration has been used. Besides the well known thermal and optical electron emission processes, a new mechanism, attributed to an impact ionization process of DX centers, is described, and its kinetics is analyzed.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

The synthesis of a buried oxide layer in multilayer Si/Ge/Si structures by the implantation of high doses of 200 keV O+ ions is studied by Rutherford backscattering analysis. The presence of Ge is found to have a minimal effect upon the mass transport of excess oxygen and interstitial silicon. Infrared transmission spectroscopy and x-ray photoelectron spectroscopy confirm that the oxygen atoms bond preferentially to silicon forming silicon dioxide and SiOx, where x〈2, with no evidence for Ge—O bonding.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

Ge segregation at SiGe/Si heterointerfaces has been studied for films deposited by atmospheric pressure chemical vapor deposition (APCVD), ultrahigh vacuum CVD (UHV/CVD) and molecular beam epitaxy (MBE). Profiles were taken by secondary-ion-mass-spectroscopy (SIMS) of samples grown with these techniques at the same growth temperatures and Ge concentrations. The MBE grown profiles are dominated by segregation of Ge into the Si top layer in the temperature range from 450 to 800 °C. SiGe/Si interfaces deposited by UHV/CVD at elevated temperatures are smeared, but at 515 °C and below the interfaces are abrupt within the resolution of the SIMS. Heterostructures grown by APCVD show abrupt interfaces and no indication of Ge segregation in the investigated temperature range from 600 to 800 °C. Surface passivation by hydrogen appears to be responsible for the suppression of the Ge segregation in CVD processes.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

In this work we consider the relaxation behavior of Si1−yCy random alloys grown epitaxially on Si, with 0.005(approximately-greater-than)y(approximately-greater-than)0.05. The Si1−yCy layers are under tensile strain as grown and at annealing temperatures below 900 °C the relaxation of strain is achieved by dislocation formation, in a fashion similar to SiGe relaxation. However, at temperatures in excess of 900 °C the C, which at lower temperatures remained in substitutional sites, precipitates out of the lattice, this removes all of the tensile strain from the layer. The nature of this precipitation is to form single crystal, nanoparticles of β-SiC with the same lattice orientation as the Si lattice in which they are created. These nanoparticles are of uniform diameter (3±1 nm for y=0.005 Si1−yCy material) and randomly dispersed throughout the original Si1−yCy region. This ability to produce nanocrystals of wide band-gap material within the Si matrix should enable the exploration of mesoscopic phenomena. The nanoparticles once formed also block the movement of dislocations, thus locking in any strain fields associated with the dislocations.

Electronic Resource