Search Results - (Author, Cooperation:A. P. Paulikas)

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  1. 1
    R. Subbaraman ; D. Tripkovic ; D. Strmcnik ; K. C. Chang ; M. Uchimura ; A. P. Paulikas ; V. Stamenkovic ; N. M. Markovic
    American Association for the Advancement of Science (AAAS)
    Published 2011
    Staff View
    Publication Date:
    2011-12-07
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Veal, B. W. ; Kwok, W. K. ; Umezawa, A. ; Crabtree, G. W. ; Jorgensen, J. D. ; Downey, J. W. ; Nowicki, L. J. ; Mitchell, A. W. ; Paulikas, A. P. ; Sowers, C. H.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report structure, resistivity, and Meissner effect measurements on YBa2−xSrxCu3O7−δ for 0〈x〈2.0. We find a region of solid solubility extending at least to x=1.0 and a monotonic depression of Tc with x. Using arguments based on structural changes with Sr doping, we speculate that the depression of Tc is due to the local distortion of the lattice in the neighborhood of the Sr site and the introduction of additional oxygen vacancies.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  3. 3
    Koshelev, I. ; Paulikas, A. P. ; Veal, B. W.
    Springer
    Published 1999
    Staff View
    ISSN:
    1573-4889
    Keywords:
    ALUMINA SCALE ; CHROMIA SCALE ; RXF ; X-RAY FLUORESCENCE ; IN SITU OXIDATION
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes:
    Abstract Refracted X-ray fluorescence (RXF) is arelatively new technique developed for studyingproperties of thin films. In this paper, formalism foranalysis of RXF measurements is derived from a newperspective. The technique is applied to the study ofthermally grown oxide scales; model predictions aretested. The evolution of chromia scales onFe-25Cr-20Ni-0.3Y alloys and some aspects of aluminascales grown on β-NiAl are investigated. Some of thedata were taken in situ, during the oxidation process.Deposited films of Fe-25Cr-20Ni-0.3Y alloys of varyingthickness and the oxidation of those films were also studied. The technique is generally applicableto thin-film studies. It provides scale-composition anddepth-profile information, scale thicknesses and growthrates, and information about transient-phase evolution.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  4. 4
    Staff View
    ISSN:
    1573-7357
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Physics
    Notes:
    Abstract We present a novel approach to the analysis of the normal state in-plane $$\sigma _{ab} $$ and out-of-plane σc conductivities of anisotropic layered crystals such as oxygen deficient YBa 2 Cu 3 O x . It can be shown that the resistive anisotropy is determined by the ratio of the phase coherence lengths in the respective directions; i.e., $$\sigma _{ab} /\sigma _c = \ell _{ab}^2 /\ell _c^2 $$ . From the idea that at all doping levels and temperatures T the out-of-plane transport in these crystals is incoherent, follows that $$\ell _c $$ is T-independent, equal to the spacing $$\ell _0 $$ between the neighboring bilayers. Thus, the T-dependence of $$\ell _{ab} $$ is given by the measured anisotropy, and $$\sigma _{ab} (\ell _{ab} )$$ dependence is obtained by plotting $$\sigma _{ab} {\text{ }}vs{\text{ }}\ell = {\text{ (}}\sigma _{ab} /\sigma _c )^{1/2} \ell _0 $$ .The analysis of several single crystals of YBa 2 Cu 3 O x (6.35 〈 x 〈 6.93) shows that for all of them $$\sigma _{ab} (\ell ) $$ is described by a universal dependence $$\sigma _{ab} /\overline \sigma = f(\ell /\overline \ell ) $$ with doping dependent parameters $$\overline \sigma {\text{ }}and{\text{ }}\overline \ell $$ .
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses