Search Results - (Author, Cooperation:A. N. Cleland)
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1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2015-10-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressR. Barends ; J. Kelly ; A. Megrant ; A. Veitia ; D. Sank ; E. Jeffrey ; T. C. White ; J. Mutus ; A. G. Fowler ; B. Campbell ; Y. Chen ; Z. Chen ; B. Chiaro ; A. Dunsworth ; C. Neill ; P. O'Malley ; P. Roushan ; A. Vainsencher ; J. Wenner ; A. N. Korotkov ; A. N. Cleland ; J. M. Martinis
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-04-25Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Latest Papers from Table of Contents or Articles in PressP. Roushan ; C. Neill ; Y. Chen ; M. Kolodrubetz ; C. Quintana ; N. Leung ; M. Fang ; R. Barends ; B. Campbell ; Z. Chen ; B. Chiaro ; A. Dunsworth ; E. Jeffrey ; J. Kelly ; A. Megrant ; J. Mutus ; P. J. O'Malley ; D. Sank ; A. Vainsencher ; J. Wenner ; T. White ; A. Polkovnikov ; A. N. Cleland ; J. M. Martinis
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-11-14Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressM. Mariantoni ; H. Wang ; T. Yamamoto ; M. Neeley ; R. C. Bialczak ; Y. Chen ; M. Lenander ; E. Lucero ; A. D. O'Connell ; D. Sank ; M. Weides ; J. Wenner ; Y. Yin ; J. Zhao ; A. N. Korotkov ; A. N. Cleland ; J. M. Martinis
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-09-03Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressJ. Kelly ; R. Barends ; A. G. Fowler ; A. Megrant ; E. Jeffrey ; T. C. White ; D. Sank ; J. Y. Mutus ; B. Campbell ; Y. Chen ; Z. Chen ; B. Chiaro ; A. Dunsworth ; I. C. Hoi ; C. Neill ; P. J. O'Malley ; C. Quintana ; P. Roushan ; A. Vainsencher ; J. Wenner ; A. N. Cleland ; J. M. Martinis
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-03-06Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
6Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on a method to fabricate nanometer scale mechanical structures from bulk, single-crystal Si substrates. A technique developed previously required more complex fabrication methods and an undercut step using wet chemical processing. Our method does not require low pressure chemical vapor deposition of intermediate masking layers, and the final step in the processing uses a dry etch technique, avoiding the difficulties encountered from surface tension effects when wet processing mechanically delicate or large aspect ratio structures. Using this technique, we demonstrate fabrication of a mechanical resonator with a fundamental resonance frequency of 70.72 MHz and a quality factor of 2×104. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesCleland, A. N. ; Esteve, D. ; Urbina, C. ; Devoret, M. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We demonstrate the use of the single electron transistor (SET) as an amplifier for a photodetector operated at 20 mK. The unparalleled low input noise of the SET permits the observation of very small numbers of charge carriers generated in a bulk p-type Si substrate. We present data showing the response of the detector when it is illuminated by extremely low levels of red light (λ=650 nm). From the "dark current'' noise of 0.06 e/s, we estimate a dc noise-equivalent power NEP=2×10−21 W/(square root of)Hz for infrared light with λ=30 μm, and from this calculate a detectivity D*=8×1017 cm⋅(square root of)Hz/W.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesKnobel, R. ; Yung, C. S. ; Cleland, A. N.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We demonstrate the use of the single-electron transistor as a radio-frequency mixer, based on the nonlinear dependence of current on gate charge. This mixer can be used for high-frequency, ultrasensitive charge measurements over a broad and tunable range of frequencies. We demonstrate operation of the mixer, using a lithographically defined thin-film aluminum transistor, in both the superconducting and normal states of aluminum, over frequencies from 10 to 300 MHz. We have operated the device both as a homodyne detector and as a phase-sensitive heterodyne mixer. We demonstrate a charge sensitivity of 〈4×10−3 e/Hz, limited by room-temperature electronics. An optimized mixer has a theoretical charge sensitivity of (approximately-less-than)1.5×10−5 e/Hz. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesYung, C. S. ; Schmidt, D. R. ; Cleland, A. N.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have fabricated and characterized the principal thermal properties of a mechanically suspended nanostructure, consisting of a micron-scale suspended GaAs island, upon which we have defined superconductor-insulator-normal metal tunnel junctions. The tunnel junctions allow for sensitive thermometry and heating of the electrons in a thermally isolated normal metal element, permitting the determination of the low-temperature thermal conductance of the legs that support the GaAs island, as well as the low-temperature electron-phonon coupling. This device forms the basis of a nanoscale bolometric detector, whose optical performance can be estimated from these measurements. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Aluminum nitride is a light, stiff, piezoelectrically active material that can be epitaxially grown on single-crystal Si. AlN is beginning to play a role in the integration of semiconducting electronic and surface acoustic wave devices, and may prove useful for the integration of other types of mechanical devices as well. We describe the growth and subsequent electron-beam patterning and etching of epitaxial AlN-on-silicon films into nanomechanical flexural resonators. We have measured resonators with fundamental mechanical resonance frequencies above 80 MHz, and quality factors in excess of 20 000. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] The simplest stringed musical instrument is the bow, similar to a hunter's bow — a string stretched on a frame so that, when plucked, it resonates and produces a note whose pitch is determined by the string's tension. On page 284 of this issue, Sazonova et al. demonstrate a ...Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] The mechanical detection of charge has a long history, dating back more than 200 years to Coulomb's torsion-balance electrometer. The modern analogues of such instruments are semiconductor-based field-effect devices, the most sensitive of which are cryogenically cooled single-electron ...Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1573-7357Source: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract We have demonstrated the use of the single electron transistor (SET) as an amplifier for a photodetector operated at 20 mK. The unparalleled low input noise of the SET permits the detection of very small numbers of charge carriers generated in a bulk p-type Si substrate. We present data showing the response of the detector when it is illuminated by extremely low levels of red light (λ=650 nm). Although we are not able to prove that individual charge carriers are being detected in our system, the magnitude of the detector response and the level of noise in the system are in good agreement with single charge, and therefore single photon, detection. From the “dark current” noise of 0.06 electron/s, we estimate a noise-equivalent power NEP=2×10−21 W/√Hz for infrared light with λ=30 µm, and from this calculate a detectivity D*=8×1017 cm-√Hz/W.Type of Medium: Electronic ResourceURL: