Search Results - (Author, Cooperation:A. Egorov)

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  1. 1
    Staff View
    Publication Date:
    2018-04-28
    Publisher:
    Institute of Physics (IOP)
    Print ISSN:
    1757-8981
    Electronic ISSN:
    1757-899X
    Topics:
    Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by:
    http://www.iop.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2018-04-20
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    0031-9007
    Electronic ISSN:
    1079-7114
    Topics:
    Physics
    Keywords:
    Condensed Matter: Electronic Properties, etc.
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2018-11-28
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    0031-9007
    Electronic ISSN:
    1079-7114
    Topics:
    Physics
    Keywords:
    Condensed Matter: Structure, etc.
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    M. C. Hansen ; P. V. Potapov ; R. Moore ; M. Hancher ; S. A. Turubanova ; A. Tyukavina ; D. Thau ; S. V. Stehman ; S. J. Goetz ; T. R. Loveland ; A. Kommareddy ; A. Egorov ; L. Chini ; C. O. Justice ; J. R. Townshend
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-11-16
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Brazil ; *Conservation of Natural Resources ; *Geographic Mapping ; Indonesia ; *Maps as Topic ; *Trees
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
    Staff View
    Type of Medium:
    article
    Publication Date:
    2017
    Keywords:
    Empirische Untersuchung ; Kommunikation ; Verbale Kommunikation ; Unterrichtsgespräch ; Gruppenunterricht ; Sprache ; Sportpädagogik ; Sprachwissenschaft ; Sporthochschule ; Modellierung ; Spezialisierung
    In:
    Teorija i praktika fiziceskoj kul'tury, (2017) H. 4, S. 43, 0040-3601
    Language:
    Russian

    FIS Bildung Literaturdatenbank
  6. 6
    Staff View
    Type of Medium:
    article
    Publication Date:
    2018
    Keywords:
    Empirische Untersuchung ; Begriffsbestimmung ; Körpererziehung ; Körperkultur ; Sportphilosophie ; Sportpsychologie ; Sportpädagogik ; Sportunterricht ; Ausbildung ; Theologie ; Körperlichkeit ; Terminologie
    In:
    Teorija i praktika fiziceskoj kul'tury, (2018) H. 10, S. 5-7, 0040-3601
    Language:
    Russian

    FIS Bildung Literaturdatenbank
  7. 7
    Egorov, A. N. ; Lebedev, S. V.

    [S.l.] : American Institute of Physics (AIP)
    Published 2000
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A magneto-optical method is applied to observe surface electrical currents in microelectronic devices. We describe here the opportunity of direct experimental localization of latchup effect in complementary metal-oxide-semiconductor integrated circuits (ICs) by visualization of latchup current path in surface layer of ICs substrate. To observe currents greater than 10 mA the garnet films with both uniaxial and in-plane anisotropy are utilized. Optimal polarization geometry providing maximal visual contrast is calculated. Topologies of both solitary and two neighboring electrical currents are experimentally investigated. The sensitivity limit (minimal current surface density) of this method of magneto-optic visualization is estimated to be 0.1 mA/μm. © 2000 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.373348

    Articles: DFG German National Licenses
  8. 8
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases. The quantum dot emission wavelength can be controllably changed from 1.1 to 1.3 μm by varying the composition of the InGaAs quantum well matrix. Photoluminescence at 1.33 μm from vertical optical microcavities containing the InAs/InGaAs quantum dot array was demonstrated. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.124023

    Articles: DFG German National Licenses
  9. 9
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A 1 W continuous-wave laser operation via the ground state of vertically coupled InGaAs quantum dots (VCQDs) in an AlGaAs matrix is demonstrated. VCQDs are directly revealed in transmission electron microscopy images of the laser structure. Ninety-six percent internal quantum efficiency is realized. The laser gain maximum shifts significantly with drive current towards higher photon energies in agreement with the relatively broad size distribution of VCQDs. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.367390

    Articles: DFG German National Licenses
  10. 10
    Kirstaedter, N. ; Schmidt, O. G. ; Ledentsov, N. N. ; Bimberg, D. ; Ustinov, V. M. ; Egorov, A. Yu. ; Zhukov, A. E. ; Maximov, M. V. ; Kop'ev, P. S. ; Alferov, Zh. I.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We present gain measurements and calculations for InAs/GaAs quantum dot injection lasers. Measurements of the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(±1)×104 cm−1 at 80 A cm−2. Calculations including realistic quantum dot energy levels, dot size fluctuation, nonthermal coupling of carriers in different dots, and band filling effects corroborate this result. A large maximum differential gain of 2×10−12 cm2 at 20 A cm−2 is found. The width of the gain spectrum is determined by participation of excited quantum dot states. We record a low transparency current density of 20 A cm−2. All experiments are carried out at liquid nitrogen temperature. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.117419

    Articles: DFG German National Licenses
  11. 11
    Kosogov, A. O. ; Werner, P. ; Gösele, U. ; Ledentsov, N. N. ; Bimberg, D. ; Ustinov, V. M. ; Egorov, A. Yu. ; Zhukov, A. E. ; Kop'ev, P. S. ; Bert, N. A. ; Alferov, Zh. I.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Annealing at higher temperature (700 °C) of structures with two-dimensional and three-dimensional arrays in InAs–GaAs quantum dots (QDs) results in an increase in the size and in a corresponding decrease in the indium composition of the QDs. The change in the In composition is monitored by the contrast pattern in the plan-view transmission electron microscopy (TEM) images viewed under the strong beam imaging conditions. Increase in the size of the QDs is manifested by the plan-view TEM images taken under [001] zone axis illumination as well as by the cross-section TEM images. We show that the dots maintain their geometrical shape upon annealing. Luminescence spectra demonstrate a shift of the QD luminescence peak toward higher energies with an increase in the annealing time (10–60 min) in agreement with the decrease in indium composition revealed in TEM studies. The corresponding decrease in the QD localization energy results in an effective evaporation of carriers from QDs at room temperature, and the intensity of the QD luminescence decreases, and the intensity of the wetting layer and the GaAs matrix luminescence increase with the increase in the annealing time. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.116843

    Articles: DFG German National Licenses
  12. 12
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We study the optical properties of structures composed of stacked InAs submonolayer insertions in an AlGaAs matrix grown on a GaAs(100) surface. The increased refractive index in the active region necessary for waveguiding is caused by the absorption peak due to excitons trapped by monolayer-height InAs islands. Despite a very low average InAs concentration, a thin AlGaAs buffer layer and an absorbing GaAs substrate photopumped lasing in the visible spectral range is already realized at low excitation density. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.123281

    Articles: DFG German National Licenses
  13. 13
    Heitz, R. ; Grundmann, M. ; Ledentsov, N. N. ; Eckey, L. ; Veit, M. ; Bimberg, D. ; Ustinov, V. M. ; Egorov, A. Yu. ; Zhukov, A. E. ; Kop'ev, P. S. ; Alferov, Zh. I.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report on optical studies of relaxation processes in self-organized InAs/GaAs quantum dots (QDs). Near resonant photoluminescence excitation spectra reveal a series of sharp lines. Their energy with respect to the detection energy does not depend on QD size and their energy separations are close to the InAs LO phonon energy of 32.1 meV estimated for strained pyramidal InAs QDs. The shape of the PLE spectra is explained by multiphonon relaxation processes involving LO phonons of the QD as well as of the wetting layer, an interface mode, and low frequency acoustical phonons. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.116716

    Articles: DFG German National Licenses
  14. 14
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate the possibility of extending the spectral range of luminescence due to InAs quantum dots (QDs) in a GaAs matrix up to 1.7 μm. Realization of such a long wavelength emission is related to formation of lateral associations of QDs during InAs deposition at low substrate temperatures (∼320–400 °C). © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.125010

    Articles: DFG German National Licenses
  15. 15
    EGOROV, A. M. ; GAZARYAN, I. G. ; SAVELYEV, S. V. ; FECHINA, V. A. ; VERYOVKIN, A. N. ; KIM, B. B.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1991
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1749-6632.1991.tb18561.x

    Articles: DFG German National Licenses
  16. 16
    MARKARYAN, A. N. ; MASHKO, S. V. ; KUKEL, L. V. ; LAPIDUS, A. L. ; BACH, A. N. ; EGOROV, A. M.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1991
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1749-6632.1991.tb18571.x

    Articles: DFG German National Licenses
  17. 17
    EGOROV, A. M. ; GAZARYAN, I. G. ; KIM, B. B. ; DOSEYEVA, V. V. ; KAPELJUCH, J. L. ; VERYOVKIN, A. N. ; FECHINA, V. A.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1994
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1749-6632.1994.tb47378.x

    Articles: DFG German National Licenses
  18. 18
    KLYACHKO, N. L. ; RUBTSOVA, M. YU. ; LEVASHOV, A. V. ; GAVRILOVA, E. M. ; EGOROV, A. M. ; MARTINEK, KAREL ; BEREZIN, I. v.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1987
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1749-6632.1987.tb45720.x

    Articles: DFG German National Licenses
  19. 19
    Staff View
    ISSN:
    1570-1468
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1007/BF01429267

    Articles: DFG German National Licenses
  20. 20
    Staff View
    ISSN:
    1090-6533
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Physics
    Notes:
    Abstract Continuous-wave lasing has been achieved via the ground state of composite vertically coupled InAlAs/InGaAs quantum dots in an AlGaAs matrix with a room temperature output power of 3.3W at both mirrors.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1134/1.1262530

    Articles: DFG German National Licenses