Analysis of light scattering centers in crystals using modified light scattering tomography
| ISSN: |
1089-7623
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
Electrical Engineering, Measurement and Control Technology
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| Notes: |
Light scattering measurements using an infrared laser light and a bias light have been carried out for the first time to investigate defect energy levels in indium-doped GaAs crystals. The principle of this method is based on the analysis of scattered light intensity variation induced by the bias light. A drastic quenching effect is observed at some wavelength of the bias light. It was found that there are two kinds of light scattering centers in as-grown indium-doped GaAs crystals. © 2000 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |