Properties of platinum-associated deep levels in silicon
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The diffusion of platinum into n- and p-type silicon has been carried out at temperatures ranging from 850 to 1000 °C and for times ranging from 1 to 50 h. Three deep levels associated with platinum were detected by the deep-level transient spectroscopy technique: two acceptor levels of Ec−0.23 and Ec−0.52 eV and a donor level of Ev+0.36 eV. The Ec−0.23 and Ev+0.36 eV levels are produced by platinum occupying the substitutional sites of silicon lattice. The Ec−0.52 eV level has not been characterized but is probably associated with some interstitial platinum-oxygen or other defect complex. Diffusion profiles of the substitutional platinum show that platinum diffuses into silicon mainly via the so-called kick-out mechanism.
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| Type of Medium: |
Electronic Resource
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| URL: |