Electrolyte electroreflectance in the characterization of HgCdTe heterostructures
Berlouis, L. E. A. ; Peter, L. M. ; Astles, M. G. ; Gough, J. ; Humphreys, R. G. ; Irvine, S. J. C. ; Steward, V.
[S.l.] : American Institute of Physics (AIP)
Published 1987
[S.l.] : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have used the technique of electrolyte electroreflectance (EER) coupled with electrochemical etching to profile through epitaxial layers and heterostructures of Hg1−xCdxTe. The need for proper electrochemical control during EER measurements is discussed. The resolution achieved in both composition, Δx=±0.002, and etch depth, ±30 A(ring), has made possible the observation of the variations in composition at the ambient/epilayer, epilayer/substrate, and high-x/low-x interfaces. Good correlations of the profiles observed have been obtained with secondary ion mass spectroscopy, electron dispersive x-ray diffraction, and Rutherford backscattering measurements. The variation of the broadening parameter Γ at these interfaces is also discussed.
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| Type of Medium: |
Electronic Resource
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| URL: |